2N7000-D26Z

## **Is Now Part of** 

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor** 

## **Features** 

- High Density Cell Design for Low RDS(ON) 

- Voltage Controlled Small Signal Switch 

- Rugged and Reliable 

- High Saturation Current Capability 

## **Description** 

These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. 

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D<br>D<br>Qm |<br>S G<br>G<br>1 TO-92 a SOT - 23 e<br>1. Source  2. Gate   3. Drain (TO-236AB) S<br>2N7002/NDS7002A<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|**Min Order Qty /**<br>**Immediate Pack**<br>**Qty**|
|---|---|---|---|---|
|2N7000|2N7000|TO-92 3L|Bulk|10000 / 1000|
|2N7000_D74Z|2N7000|TO-92 3L|Ammo|2000 / 2000|
|2N7000_D75Z|2N7000|TO-92 3L|Tape and Reel|2000 / 2000|
|2N7000_D26Z|2N7000|TO-92 3L|Tape and Reel|2000 / 2000|
|2N7002|702|SOT-23 3L|Tape and Reel|3000 / 3000|
|NDS7002A|712|SOT-23 3L|Tape and Reel|3000 / 3000|



© 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 

www.fairchildsemi.com 

1 

## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. **Value Symbol Parameter Unit 2N7000 2N7002 NDS7002A** ~~a~~ VDSS Drain-to-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS ≤ 1 M 60 V VGSS Gate-Source Voltage - Continuous ±20 V ~~a————~~ Gate-Source Voltage - Non Repetitive (tp < 50 S) ±40 ID Maximum Drain Current - Continuous 200 115 280 mA Maximum Drain Current - Pulsed 500 800 1500 PD Maximum Power Dissipation Derated above 25°C 400 200 300 mW 3.2 1.6 2.4 mW/°C TJ, TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C TL Maximum Lead Temperature for Soldering Purposes, 300 °C ~~a~~ 1/16-inch from Case for 10 Seconds **Thermal Characteristics** Values are at TC = 25°C unless otherwise noted **. Value Symbol Parameter Unit 2N7000 2N7002 NDS7002A** RJA Thermal Resistance, Junction to Ambient 312.5 625 417 °C/W ~~pf~~ 

## **Electrical Characteristics** 

Values are at TC = 25°C unless otherwise noted. 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Conditions**<br>~~a~~|**Type**<br>~~oe~~|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Off Characteristics**<br>~~a~~<br>~~a~~<br>~~oe~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown<br>Voltage<br>~~a~~|VGS= 0 V, ID= 10A<br>~~a~~|All<br>~~oe~~|60|||V|
|IDSS<br>~~a~~<br>~~i~~|Zero Gate Voltage Drain<br>Current<br>~~a~~<br>~~i=:~~|VDS= 48 V, VGS= 0 V<br>~~a~~<br>~~=:~~|2N7000<br>~~oe~~<br>~~=:~~|~~=:~~|~~=:~~|1<br>~~=:~~|A<br>~~=:~~|
|||VDS= 48 V, VGS= 0 V,<br>TC= 125°C<br>~~=:~~||~~=:~~|~~=:~~|1<br>~~=:~~|mA<br>~~=:~~|
|||VDS= 60 V, VGS= 0 V<br>~~=:~~<br>~~Sees~~|2N7002<br>NDS7002A<br>~~=:~~<br>~~Sees~~|~~=:~~<br>~~Sees~~|~~=:~~<br>~~Sees~~|1<br>~~=:~~<br>~~Sees~~|A<br>~~=:~~<br>~~Sees~~|
|||VDS= 60 V, VGS= 0 V,<br>TC= 125°C<br>~~=:~~<br>~~Sees~~||~~=:~~<br>~~Sees~~|~~=:~~<br>~~Sees~~|0.5<br>~~=:~~<br>~~Sees~~|mA<br>~~=:~~<br>~~Sees~~|
|IGSSF<br>~~i~~|Gate - Body Leakage,<br>Forward<br>~~i=:~~|VGS= 15 V, VDS= 0 V<br>~~=:~~<br>~~Sees~~|2N7000<br>~~=:~~<br>~~Sees~~|~~=:~~<br>~~Sees~~|~~=:~~<br>~~Sees~~|10<br>~~=:~~<br>~~Sees~~|nA<br>~~=:~~<br>~~Sees~~|
|||VGS= 20 V, VDS= 0 V<br>~~ee ee~~|2N7002<br>NDS7002A<br>~~ee~~|~~ee~~|~~ee~~|100<br>~~ee~~|nA<br>~~ee~~|
|IGSSR<br>~~a~~|Gate - Body Leakage,<br>Reverse<br>~~a~~|VGS= -15 V, VDS= 0 V<br>~~a~~<br>~~ee ee~~|2N7000<br>~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|-10<br>~~a~~<br>~~ee~~|nA<br>~~a~~<br>~~ee~~|
|||VGS= -20 V, VDS= 0 V<br>~~a~~<br>~~ee ee~~|2N7002<br>NDS7002A<br>~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|~~a~~<br>~~ee~~|-100<br>~~a~~<br>~~ee~~|nA<br>~~a~~<br>~~ee~~|



© 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 

www.fairchildsemi.com 

2 

## **Electrical Characteristics** (Continued) 

|**Symbol**|**Parameter**|**Conditions**|**Type**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**On Characteristics**||||||||
|VGS(th)|Gate Threshold Voltage|VDS= VGS, ID= 1 mA|2N7000|0.8|2.1|3|V|
|||VDS= VGS, ID= 250A|2N7002<br>NDS7002A|1|2.1|2.5||
|RDS(ON)|Static Drain-Source<br>On-Resistance|VGS= 10 V,<br>ID= 500 mA|2N7000||1.2|5||
|||VGS= 10 V,<br>ID= 500 mA, TC= 125°C|||1.9|9||
|||VGS= 4.5 V, ID= 75 mA|||1.8|5.3||
|||VGS= 10 V,<br>ID= 500 mA|2N7002||1.2|7.5||
|||VGS= 10 V,<br>ID= 500 mA, TC= 100°C|||1.7|13.5||
|||VGS= 5 V,<br>ID= 50 mA|||1.7|7.5||
|||VGS= 5 V,<br>ID= 50 mA, TC= 100°C|||2.4|13.5||
|||VGS= 10 V,<br>ID= 500 mA|NDS7002A||1.2|2||
|||VGS= 10 V,<br>ID= 500 mA, TC= 125°C|||2|3.5||
|||VGS= 5 V,<br>ID= 50 mA|||1.7|3||
|||VGS= 5 V,<br>ID= 50 mA, TC= 125°C|||2.8|5||
|VDS(ON)|Drain-Source On-Voltage|VGS= 10 V,<br>ID= 500 mA|2N7000||0.6|2.5|V|
|||VGS= 4.5 V,<br>ID= 75 mA|||0.14|0.4||
|||VGS= 10 V,<br>ID= 500 mA|2N7002||0.6|3.75||
|||VGS= 5.0 V,<br>ID= 50 mA|||0.09|1.5||
|||VGS= 10 V,<br>ID= 500 mA|NDS7002A||0.6|1||
|||VGS= 5.0 V,<br>ID= 50 mA|||0.09|0.15||
|ID(ON)|On-State Drain Current|VGS= 4.5 V,<br>VDS= 10 V|2N7000|75|600||mA|
|||VGS= 10 V,<br>VDS  2 VDS(on)|2N7002|500|2700|||
|||VGS= 10 V,<br>VDS  2 VDS(on)|NDS7002A|500|2700|||
|gFS|Forward<br>Transconductance|VDS= 10 V,<br>ID= 200 mA|2N7000|100|320||mS|
|||VDS2VDS(ON),<br>ID= 200 mA|2N7002|80|320|||
|||VDS2VDS(ON),<br>ID= 200 mA|NDS7002A|80|320|||



© 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 

www.fairchildsemi.com 

3 

## **Electrical Characteristics** (Continued) 

|**Symbol**|**Parameter**|**Conditions**|**Type**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Dynamic Characteristics**||||||||
|Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V,<br>f = 1.0 MHz|All||20|50|pF|
|Coss|Output Capacitance||All||11|25||
|Crss|Reverse Transfer<br>Capacitance||All||4|5||
|ton|Turn-On Time|VDD= 15 V, RL= 25,<br>ID= 500 mA,<br>VGS= 10 V, RGEN= 25|2N7000|||10|ns|
|||VDD= 30 V, RL= 150,<br>ID= 200 mA, VGS= 10 V,<br>RGEN= 25|2N7002<br>NDS7002A|||20||
|toff|Turn-Off Time|VDD= 15 V, RL= 25,<br>ID= 500 mA, VGS= 10 V,<br>RGEN= 25|2N7000|||10|ns|
|||VDD= 30 V, RL= 150,<br>ID= 200 mA, VGS= 10 V,<br>RGEN= 25|2N7002<br>NDS7002A|||20||
|**Drain-Source Diode Characteristics and Maximum Ratings**||||||||
|IS|Maximum Continuous Drain-Source Diode Forward<br>Current||2N7002|||115|mA|
||||NDS7002A|||280||
|ISM|Maximum Pulsed Drain-Source Diode Forward<br>Current||2N7002|||0.8|A|
||||NDS7002A|||1.5||
|VSD|Drain-Source Diode<br>Forward Voltage|VGS= 0 V,<br>IS= 115 mA(1)|2N7002||0.88|1.5|V|
|||VGS= 0 V,<br>IS= 400 mA(1)|NDS7002A||0.88|1.2||



## **Note:** 

1. Pulse test : Pulse Width ≤  300 μs, Duty Cycel ≤ 2 %. 

© 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 

www.fairchildsemi.com 

4 

## **Typical Performance Characteristics** 

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2N7000 / 2N7002 / NDS7002A<br>2 3<br>VGS = 10V 9.0 V    =4.0VGS<br>8.0 4.5<br>  7.0 2.5 5.0<br>1.5<br> 6.0<br>6.0 2 :<br>7.0<br>1<br>5.0 1.5 = 8.0<br>9.0<br>10<br>0.5<br>4.0 1<br> 3.0<br>0 0.5<br>0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2<br>V DS  , DRAIN-SOURCE VOLTAGE (V I    , DRAIN CURRENT (A)D<br>Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate<br>Voltage and Drain Current<br>2 3<br>V GS    = 10V  V    GS<br>1.75 I   = 500m AD 2.5<br>T  = 125°CJ<br>1.5 2<br>1.25 1.5<br> 25°C<br>1 1 iee<br>-55°C<br>0.75 0.5<br>0.5-50 re -25 0 25 50 75 100 125 150 0 0 =Ee:7PE{tt 0.4 0.8 1.2 oe 1.6 2<br>T  , JUNCTION TEMPERATURE (°C)J I   , DRAIN CURRENT (A)D<br>Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain<br>with Temperature Current and Temperature<br>2 1.1<br>T   = -55°CJ  25°C 125°C 1.05 V    = VDS GS<br>1.6 I    = 1 m AD<br>1<br>1.2<br>0.95<br>0.8<br>0.9<br>0.4 0.85<br>0 0.8<br>0 es 2  > 4 6 8 10 -50 -25 0 25 50 75 100 125 150<br>V GS , GATE TO SOURCE VOLTAGE (V T  , JUNCTION TEM PERATURE (°C)J<br>Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with<br>Temperature<br>DS(on)<br>R           , NORMALIZED<br>DRAIN-SOURCE ON-RESISTANCE<br>I    , DRAIN-SOURCE CURRENT (A)D<br>DS(on) DS(on)<br>R           , NORMALIZED R           , NORMALIZED<br>DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE<br>D<br>th<br>V   , N<br>**----- End of picture text -----**<br>


© 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 

www.fairchildsemi.com 

5 

## **Typical Performance Characteristics** (Continued) 

## **2N7000 / 2N7002 / NDS7002A** 

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1.1 2<br>V G<br>1.075 I    = 250D µA 1<br>0.5 Of<br>1.05 | Of ee<br>T  = 125°C J<br>pe 1.025 0.1 Pff 25 ° C<br>bob 1 fe 0.05 O_O Ff -55°C<br>0.975 aOF 0.01  FF<br>8 7 A<br>é 0.95 Anne 0.005 ——fFee ee es ees ee es<br>0.925-50 a -25 0 25 50 75 100 125 150 0.001 ffff fo<br>T  , JUNCTION TEMPERATURE (°C)J 0.2 0.4 V SD   , BODY DIODE FORWARD VOLTAGE (V)0.6 0.8 1 1.2 1.4<br>Figure 7. Breakdown Voltage Variation Figure 8.  Body Diode Forward Voltage Variation with<br>with Temperature<br>60 10<br>40 V    = 25VDS<br>C iss 8<br>20<br>See<br>SA C oss 6 P|<br>10 ai PE<br>I   =500m AD<br>5 4<br>C  rss<br>eeeeee ASS<br>2 f = 1 MHzV     = 0VGS ee 2 wa 280m A | 1.2<br>115m A<br>1 peit 0 2 Theo|<br>1 2 3 5 10 20 30 50 0 0.4 0.8 1.2 1.6 2<br>V DS , DRAIN TO SOURCE VOLTAGE (V)<br>Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics<br>VDD t on toff<br>t d(on) tr td(off) t f<br>VIN R L 90% 90%<br>D V OUT Output, Vout<br>10% 10%<br>VGS Inverted<br>R 90%<br>GEN G DUT<br>Input, Vin 50% 50%<br>10%<br>S<br>Pulse Width<br>DRAIN-SOURCE BREAKDOWN VOLTAGE<br>E-SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br> , GA<br>GS<br>V<br>I   , REVERSE DRAIN CURRENT (A)S<br>**----- End of picture text -----**<br>


**Figure 12. Switching Waveforms** 

© 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 

www.fairchildsemi.com 

6 

## **Typical Performance Characteristics** (Continued) 

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**----- Start of picture text -----**<br>
Figure 13. 2N7000 Maximum Figure 14. 2N7002 Maximum<br>Safe Operating Area Safe Operating Area<br>3 2t——T, t+} i<br>ee _<br>—— ==<br>BEFoz5fj SSSeSS _~ SS[| ~ON~ a, ms ~CT<br>ae ——  SSS 70, ————<br>o 0.05 _ eecin sai Om —aa<br>Zz SS a<br>3 Vv Gs =10 DoSSAAS 7see neeee<br>C SINGLE PULSE — || oS Was f |ST<br>Pfs 0.01 + SN~ — ro<br>eeaee a<br>1 2 5 10 29 30 60 80<br>Vps,DRAIN-SOURCE VOLTAGE (V)<br>Figure 15. NDS7000A Maximum<br>Safe Operating Area<br>@be, 0.51 SSSS9 tteja OO Oe =<br>é Roe fey ppp EE en R ( (t) * Re,<br>: 0.2 Los eera tt “ = (See Datasheet) =r "s<br>tu 0.1 PO a[Le 4<br>2 0.05 —bos FEPe=P TEEer EE ipli<br>2 0.02 Cea   TJ - T << A   =  P * t (t)<br>& 0.02 ot ; 7 Single Pulse | , D uty Cy cle _ It<br>0.01<br>0.0001 0.001 0.01 0.1 1 10 100 300<br>t 1, TIME (sec)<br>Figure 16. TO-92, 2N7000 Transient Thermal Response Curve<br>_ 0.51 aeSCO SS SNSS Sc a eeeeOO<br>a eSa a 8erot a ee<br>2é> 0.20.1 a02aeP|aeaar DD cetee— a 0| eee R Rosa = (See Datasheet)<br>5i 0.05 005 SSeetee ——<br>mf7 0.0 eee a est P(pk)<br>Ww 9.02 a eo i<br>aN 0.01 LetomSETe TT |ETrt >a  t1  t 2 |<br><S 0.002 [|apwHFSingle9 Pulse aa a OO | , D   Tut J  y- T C A    y=  P * Roa (t)<br>2 0.001 Tre Eee _<br>0.0001 0.001 0.01 0.1 1 10 100 300<br>   R<br>[t  , TIME (sec)] 1<br>THERMAL RESISTANCE<br>THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


© 1998 Fairchild Semiconductor Corporation 2N7000 / 2N7002 / NDS7002A Rev. 2.10 

www.fairchildsemi.com 

7 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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