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2N6667G
Bipolar (BJT) Single Transistor, PNP, 60 V, 10 A, 2 W, TO-220, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 2W
- DC Current Gain hFE: 100hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 10A
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 400 |
| Price | 0.557 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
2N6667, 2N6668 ## Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. - High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc - Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80 Vdc (Min) − 2N6668 - Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max)@ IC = 5.0 Adc **www.onsemi.com** **PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W** - Monolithic Construction with Built−In Base−Emitter Shunt Resistors - TO−220AB Compact Package - Complementary to 2N6387, 2N6388 - These Devices are Pb−Free and are RoHS Compliant* **==> picture [142 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>BASE<br>≈ 8 k ≈ 120<br>as h enihe<br>rz<br>EMITTER<br>**----- End of picture text -----**<br> **==> picture [103 x 142] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>y<br>1<br>2<br>3<br>TO−220<br>CASE 221A<br>STYLE 1<br>**----- End of picture text -----**<br> **==> picture [90 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING DIAGRAM<br>**----- End of picture text -----**<br> **Figure 1. Darlington Schematic** **==> picture [95 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> 2N666x<br>AYWWG<br>IN<br>x = 7 or 8<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br> **ORDERING INFORMATION** > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. |**Device**<br>~~ff~~|**Package**<br>~~ff~~|**Shipping**<br>~~ff~~| |---|---|---| |2N6667G<br>~~ff~~|TO−220<br>(Pb−Free)<br>~~ff~~|50 Units/Rail<br>~~ff~~| |2N6668G<br>~~ff~~|TO−220<br>(Pb−Free)<br>~~ff~~|50 Units/Rail<br>~~ff~~| Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 8** **2N6667/D** ## **2N6667, 2N6668** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**MAXIMUM RATINGS**(Note 1)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6667**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6668**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎÎ**<br>VCEO<br>**ÎÎÎÎÎ**<br>60<br>**ÎÎÎÎÎ**<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>**ÎÎÎÎÎ**<br>VCB<br>**ÎÎÎÎÎ**<br>60<br>ÎÎÎÎÎ<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎÎ**<br>VEB<br>ÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Current −Continuous<br>−Peak<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>IC<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>10<br>15<br>ÎÎÎ<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎÎ**<br>IB<br>**ÎÎÎÎÎÎÎÎÎ**<br>250<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TC= 25�C<br>Derate above 25�C<br>**ÎÎÎÎÎ**<br>PD<br>**ÎÎÎÎÎÎÎÎÎ**<br>65<br>0.52<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TA= 25�C<br>Derate above 25�C<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>PD<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>2.0<br>0.016<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Operating and Storage Junction Temperature Range<br>ÎÎÎÎÎ<br>TJ, Tstg<br>ÎÎÎÎÎÎÎÎÎ<br>–65 to +150<br>ÎÎÎ<br>�C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality<br>should not be assumed, damage may occur and reliability may be affected.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction to Case<br>**ÎÎÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎÎ**<br>1.92<br>**ÎÎÎ**<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction to Ambient<br>ÎÎÎÎÎ<br>R�JA<br>ÎÎÎÎÎÎ<br>62.5<br>ÎÎÎ<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(Note 1) (TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 2)<br>2N6667<br>(IC= 200 mAdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 60 Vdc, IB= 0)<br>2N6667<br>(VCE= 80 Vdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 1.5 Vdc)<br>2N6667<br>(VCE= 80 Vdc, VEB(off) = 1.5 Vdc)<br>2N6668<br>(VCE= 60 Vdc, VEB(off) = 1.5 Vdc, TC= 125�C)<br>2N6667<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125�C)<br>2N6668<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>300<br>300<br>3.0<br>3.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>�Adc<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>5.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 1)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (IC= 5.0 Adc, VCE= 3.0 Vdc)<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1000<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20000<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>−<br>**ÎÎÎ**<br>2.0<br>3.0<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>2.8<br>4.5<br>ÎÎ<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>|hfe|<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>200<br>**ÎÎ**<br>pF<br>Small−Signal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>hfe<br>1000<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**MAXIMUM RATINGS**(Note 1)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6667**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6668**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎÎ**<br>VCEO<br>**ÎÎÎÎÎ**<br>60<br>**ÎÎÎÎÎ**<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>**ÎÎÎÎÎ**<br>VCB<br>**ÎÎÎÎÎ**<br>60<br>ÎÎÎÎÎ<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎÎ**<br>VEB<br>ÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Current −Continuous<br>−Peak<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>IC<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>10<br>15<br>ÎÎÎ<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎÎ**<br>IB<br>**ÎÎÎÎÎÎÎÎÎ**<br>250<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TC= 25�C<br>Derate above 25�C<br>**ÎÎÎÎÎ**<br>PD<br>**ÎÎÎÎÎÎÎÎÎ**<br>65<br>0.52<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TA= 25�C<br>Derate above 25�C<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>PD<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>2.0<br>0.016<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Operating and Storage Junction Temperature Range<br>ÎÎÎÎÎ<br>TJ, Tstg<br>ÎÎÎÎÎÎÎÎÎ<br>–65 to +150<br>ÎÎÎ<br>�C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality<br>should not be assumed, damage may occur and reliability may be affected.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction to Case<br>**ÎÎÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎÎ**<br>1.92<br>**ÎÎÎ**<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction to Ambient<br>ÎÎÎÎÎ<br>R�JA<br>ÎÎÎÎÎÎ<br>62.5<br>ÎÎÎ<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(Note 1) (TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 2)<br>2N6667<br>(IC= 200 mAdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 60 Vdc, IB= 0)<br>2N6667<br>(VCE= 80 Vdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 1.5 Vdc)<br>2N6667<br>(VCE= 80 Vdc, VEB(off) = 1.5 Vdc)<br>2N6668<br>(VCE= 60 Vdc, VEB(off) = 1.5 Vdc, TC= 125�C)<br>2N6667<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125�C)<br>2N6668<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>300<br>300<br>3.0<br>3.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>�Adc<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>5.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 1)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (IC= 5.0 Adc, VCE= 3.0 Vdc)<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1000<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20000<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>−<br>**ÎÎÎ**<br>2.0<br>3.0<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>2.8<br>4.5<br>ÎÎ<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>|hfe|<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>200<br>**ÎÎ**<br>pF<br>Small−Signal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>hfe<br>1000<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**MAXIMUM RATINGS**(Note 1)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6667**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6668**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎÎ**<br>VCEO<br>**ÎÎÎÎÎ**<br>60<br>**ÎÎÎÎÎ**<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>**ÎÎÎÎÎ**<br>VCB<br>**ÎÎÎÎÎ**<br>60<br>ÎÎÎÎÎ<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎÎ**<br>VEB<br>ÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Current −Continuous<br>−Peak<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>IC<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>10<br>15<br>ÎÎÎ<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎÎ**<br>IB<br>**ÎÎÎÎÎÎÎÎÎ**<br>250<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TC= 25�C<br>Derate above 25�C<br>**ÎÎÎÎÎ**<br>PD<br>**ÎÎÎÎÎÎÎÎÎ**<br>65<br>0.52<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TA= 25�C<br>Derate above 25�C<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>PD<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>2.0<br>0.016<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Operating and Storage Junction Temperature Range<br>ÎÎÎÎÎ<br>TJ, Tstg<br>ÎÎÎÎÎÎÎÎÎ<br>–65 to +150<br>ÎÎÎ<br>�C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality<br>should not be assumed, damage may occur and reliability may be affected.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction to Case<br>**ÎÎÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎÎ**<br>1.92<br>**ÎÎÎ**<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction to Ambient<br>ÎÎÎÎÎ<br>R�JA<br>ÎÎÎÎÎÎ<br>62.5<br>ÎÎÎ<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(Note 1) (TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 2)<br>2N6667<br>(IC= 200 mAdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 60 Vdc, IB= 0)<br>2N6667<br>(VCE= 80 Vdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 1.5 Vdc)<br>2N6667<br>(VCE= 80 Vdc, VEB(off) = 1.5 Vdc)<br>2N6668<br>(VCE= 60 Vdc, VEB(off) = 1.5 Vdc, TC= 125�C)<br>2N6667<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125�C)<br>2N6668<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>300<br>300<br>3.0<br>3.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>�Adc<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>5.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 1)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (IC= 5.0 Adc, VCE= 3.0 Vdc)<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1000<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20000<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>−<br>**ÎÎÎ**<br>2.0<br>3.0<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>2.8<br>4.5<br>ÎÎ<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>|hfe|<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>200<br>**ÎÎ**<br>pF<br>Small−Signal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>hfe<br>1000<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**MAXIMUM RATINGS**(Note 1)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6667**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6668**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎÎ**<br>VCEO<br>**ÎÎÎÎÎ**<br>60<br>**ÎÎÎÎÎ**<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>**ÎÎÎÎÎ**<br>VCB<br>**ÎÎÎÎÎ**<br>60<br>ÎÎÎÎÎ<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎÎ**<br>VEB<br>ÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Current −Continuous<br>−Peak<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>IC<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>10<br>15<br>ÎÎÎ<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎÎ**<br>IB<br>**ÎÎÎÎÎÎÎÎÎ**<br>250<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TC= 25�C<br>Derate above 25�C<br>**ÎÎÎÎÎ**<br>PD<br>**ÎÎÎÎÎÎÎÎÎ**<br>65<br>0.52<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TA= 25�C<br>Derate above 25�C<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>PD<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>2.0<br>0.016<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Operating and Storage Junction Temperature Range<br>ÎÎÎÎÎ<br>TJ, Tstg<br>ÎÎÎÎÎÎÎÎÎ<br>–65 to +150<br>ÎÎÎ<br>�C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality<br>should not be assumed, damage may occur and reliability may be affected.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction to Case<br>**ÎÎÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎÎ**<br>1.92<br>**ÎÎÎ**<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction to Ambient<br>ÎÎÎÎÎ<br>R�JA<br>ÎÎÎÎÎÎ<br>62.5<br>ÎÎÎ<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(Note 1) (TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 2)<br>2N6667<br>(IC= 200 mAdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 60 Vdc, IB= 0)<br>2N6667<br>(VCE= 80 Vdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 1.5 Vdc)<br>2N6667<br>(VCE= 80 Vdc, VEB(off) = 1.5 Vdc)<br>2N6668<br>(VCE= 60 Vdc, VEB(off) = 1.5 Vdc, TC= 125�C)<br>2N6667<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125�C)<br>2N6668<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>300<br>300<br>3.0<br>3.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>�Adc<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>5.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 1)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (IC= 5.0 Adc, VCE= 3.0 Vdc)<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1000<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20000<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>−<br>**ÎÎÎ**<br>2.0<br>3.0<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>2.8<br>4.5<br>ÎÎ<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>|hfe|<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>200<br>**ÎÎ**<br>pF<br>Small−Signal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>hfe<br>1000<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**MAXIMUM RATINGS**(Note 1)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6667**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6668**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎÎ**<br>VCEO<br>**ÎÎÎÎÎ**<br>60<br>**ÎÎÎÎÎ**<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>**ÎÎÎÎÎ**<br>VCB<br>**ÎÎÎÎÎ**<br>60<br>ÎÎÎÎÎ<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎÎ**<br>VEB<br>ÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Current −Continuous<br>−Peak<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>IC<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>10<br>15<br>ÎÎÎ<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎÎ**<br>IB<br>**ÎÎÎÎÎÎÎÎÎ**<br>250<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TC= 25�C<br>Derate above 25�C<br>**ÎÎÎÎÎ**<br>PD<br>**ÎÎÎÎÎÎÎÎÎ**<br>65<br>0.52<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TA= 25�C<br>Derate above 25�C<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>PD<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>2.0<br>0.016<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Operating and Storage Junction Temperature Range<br>ÎÎÎÎÎ<br>TJ, Tstg<br>ÎÎÎÎÎÎÎÎÎ<br>–65 to +150<br>ÎÎÎ<br>�C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality<br>should not be assumed, damage may occur and reliability may be affected.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction to Case<br>**ÎÎÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎÎ**<br>1.92<br>**ÎÎÎ**<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction to Ambient<br>ÎÎÎÎÎ<br>R�JA<br>ÎÎÎÎÎÎ<br>62.5<br>ÎÎÎ<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(Note 1) (TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 2)<br>2N6667<br>(IC= 200 mAdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 60 Vdc, IB= 0)<br>2N6667<br>(VCE= 80 Vdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 1.5 Vdc)<br>2N6667<br>(VCE= 80 Vdc, VEB(off) = 1.5 Vdc)<br>2N6668<br>(VCE= 60 Vdc, VEB(off) = 1.5 Vdc, TC= 125�C)<br>2N6667<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125�C)<br>2N6668<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>300<br>300<br>3.0<br>3.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>�Adc<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>5.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 1)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (IC= 5.0 Adc, VCE= 3.0 Vdc)<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1000<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20000<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>−<br>**ÎÎÎ**<br>2.0<br>3.0<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>2.8<br>4.5<br>ÎÎ<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>|hfe|<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>200<br>**ÎÎ**<br>pF<br>Small−Signal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>hfe<br>1000<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**MAXIMUM RATINGS**(Note 1)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6667**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**2N6668**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎÎ**<br>VCEO<br>**ÎÎÎÎÎ**<br>60<br>**ÎÎÎÎÎ**<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>**ÎÎÎÎÎ**<br>VCB<br>**ÎÎÎÎÎ**<br>60<br>ÎÎÎÎÎ<br>80<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎÎ**<br>VEB<br>ÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Current −Continuous<br>−Peak<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>IC<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>10<br>15<br>ÎÎÎ<br>**ÎÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎÎ**<br>IB<br>**ÎÎÎÎÎÎÎÎÎ**<br>250<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TC= 25�C<br>Derate above 25�C<br>**ÎÎÎÎÎ**<br>PD<br>**ÎÎÎÎÎÎÎÎÎ**<br>65<br>0.52<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Total Device Dissipation @ TA= 25�C<br>Derate above 25�C<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>PD<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>2.0<br>0.016<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/�C<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Operating and Storage Junction Temperature Range<br>ÎÎÎÎÎ<br>TJ, Tstg<br>ÎÎÎÎÎÎÎÎÎ<br>–65 to +150<br>ÎÎÎ<br>�C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality<br>should not be assumed, damage may occur and reliability may be affected.<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction to Case<br>**ÎÎÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎÎ**<br>1.92<br>**ÎÎÎ**<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction to Ambient<br>ÎÎÎÎÎ<br>R�JA<br>ÎÎÎÎÎÎ<br>62.5<br>ÎÎÎ<br>�C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(Note 1) (TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 2)<br>2N6667<br>(IC= 200 mAdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 60 Vdc, IB= 0)<br>2N6667<br>(VCE= 80 Vdc, IB= 0)<br>2N6668<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 1.5 Vdc)<br>2N6667<br>(VCE= 80 Vdc, VEB(off) = 1.5 Vdc)<br>2N6668<br>(VCE= 60 Vdc, VEB(off) = 1.5 Vdc, TC= 125�C)<br>2N6667<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125�C)<br>2N6668<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>300<br>300<br>3.0<br>3.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>�Adc<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>5.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 1)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (IC= 5.0 Adc, VCE= 3.0 Vdc)<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1000<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20000<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>−<br>**ÎÎÎ**<br>2.0<br>3.0<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>2.8<br>4.5<br>ÎÎ<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>|hfe|<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>200<br>**ÎÎ**<br>pF<br>Small−Signal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>hfe<br>1000<br>−<br>−| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>**Characteristic**<br>Î<br>|ÎÎÎ<br><br>ÎÎÎ<br><br>**Symbol**<br><br><br>|ÎÎÎ<br>Î<br><br>ÎÎ**Î**<br><br>**Min**<br>|ÎÎ<br><br><br>ÎÎ<br><br>**Max**<br>|ÎÎ<br><br><br>ÎÎ<br><br>**Unit**<br>| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Î<br><br>**OFF CHARACTERISTICS**<br>|ÎÎÎ<br><br>ÎÎÎ<br><br><br>|Î<br>ÎÎ**Î**<br>ÎÎÎ<br><br><br>|ÎÎ<br>ÎÎ<br><br><br>|ÎÎ<br>ÎÎ<br><br><br>| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 2)<br>2N6667<br>(IC= 200 mAdc, IB= 0)<br>2N6668<br>Î<br>|ÎÎÎ<br><br>ÎÎÎ<br>**ÎÎÎ**<br>VCEO(sus)<br><br>|ÎÎÎ<br>Î<br>**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>80|ÎÎ<br><br><br>ÎÎ<br>**ÎÎ**<br>−<br>−|ÎÎ<br><br><br>ÎÎ<br>**ÎÎ**<br>Vdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Collector Cutoff Current (VCE= 60 Vdc, IB= 0)<br>2N6667<br>(VCE= 80 Vdc, IB= 0)<br>2N6668<br>Î<br>|ÎÎÎ<br><br>ICEO<br><br>|Î<br><br>ÎÎ**Î**<br><br>−<br>−|ÎÎ**Î**<br><br>1.0<br>1.0|ÎÎ<br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VEB(off)= 1.5 Vdc)<br>2N6667<br>(VCE= 80 Vdc, VEB(off) = 1.5 Vdc)<br>2N6668<br>(VCE= 60 Vdc, VEB(off) = 1.5 Vdc, TC= 125�C)<br>2N6667<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 125�C)<br>2N6668<br>Î<br>Î<br>**Î**|**ÎÎÎ**<br><br><br><br><br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>ICEX<br><br><br>|**Î**<br>**ÎÎÎ**<br>Î<br>Î<br>**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>−|**ÎÎ**<br><br><br><br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎ**<br>300<br>300<br>3.0<br>3.0|**ÎÎ**<br><br><br><br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>�Adc<br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>|ÎÎÎ<br>IEBO<br><br>ÎÎÎ|Î<br>ÎÎ**Î**<br>−<br>ÎÎÎ|ÎÎ<br>5.0<br>ÎÎ|ÎÎ<br>mAdc<br>ÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 1)<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>DC Current Gain (IC= 5.0 Adc, VCE= 3.0 Vdc)<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br><br>Î<br>|ÎÎÎ<br><br>hFE<br><br><br>|Î<br><br><br>ÎÎ**Î**<br><br>1000<br>100|ÎÎ**Î**<br><br>20000<br>−|ÎÎ<br><br>−| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>**Î**|**ÎÎÎ**<br><br><br>**ÎÎÎ**<br>VCE(sat)<br>|**Î**<br>**ÎÎÎ**<br>**Î**<br>**ÎÎÎ**<br>−<br>−|**ÎÎ**<br><br>**ÎÎ**<br>2.0<br>3.0|**ÎÎ**<br><br>**ÎÎ**<br>Vdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Base−Emitter Saturation Voltage(IC= 5.0 Adc, IB= 0.01 Adc)<br>(IC= 10 Adc, IB= 0.1 Adc)<br>Î<br>|ÎÎÎ<br><br>VBE(sat)<br><br><br>|Î<br><br>ÎÎ**Î**<br><br>−<br>−<br>|ÎÎ**Î**<br><br>2.8<br>4.5<br>|ÎÎ<br><br>Vdc<br>| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎ<br><br>**DYNAMIC CHARACTERISTICS**<br><br><br><br>||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Current Gain − Bandwidth Product (IC= 1.0 Adc, VCE= 5.0 Vdc, ftest= 1.0 MHz)<br>Î<br>|ÎÎÎ<br><br>ÎÎÎ<br><br>|hfe|<br><br>|ÎÎÎ<br>Î<br><br>ÎÎ**Î**<br><br>20|ÎÎ<br><br><br>ÎÎ<br><br>−|ÎÎ<br><br><br>ÎÎ<br><br>−| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Î**<br><br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 1.0 MHz)<br>|**ÎÎÎ**<br><br><br><br>Cob<br>|**Î**<br>**ÎÎÎ**<br><br><br>−|**ÎÎ**<br><br><br>200|**ÎÎ**<br><br><br>pF| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Î**<br>Small−Signal Current Gain (IC= 1.0 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)|**ÎÎÎ**<br><br>hfe|**Î**<br>**ÎÎÎ**<br>1000|**ÎÎ**<br>−|**ÎÎ**<br>−| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2%. **http://onsemi.com 2** **2N6667, 2N6668** **==> picture [492 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>- 30 V<br>RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RC<br>D1, MUST BE FAST RECOVERY TYPES e.g., SCOPE<br>�1N5825 USED ABOVE I�MSD6100 USED BELOW IB �B � 100 mA 100 mA V2 RB TUT<br>APPROX<br>+ 8 V<br>FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0<br>51 D1 � 8 k � 120<br>tr, tf � 10 ns 0<br>DUTY CYCLE = 1.0% V1 + 4.0 V<br>APPROX<br>- 12 V 25 μs<br>Figure 2. Switching Times Test Circuit<br>TA TC<br>4 80 10<br>7 VCC = 30 V<br>5 IC/IB = 250<br>IB1 = IB2<br>3 60 32 tr TJ = 25°C<br>T C<br>ts<br>2 40 1<br>0.7<br>0.5<br>TA<br>1 20 0.3 .td<br>tf<br>0.2<br>0.1<br>0<br>0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10<br>T, TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS)<br>Figure 3. Power Derating Figure 4. Typical Switching Times<br>1<br>D = 0.5<br>0.5<br>0.3<br>0.2<br>0.2<br>0.1<br>0.1 P(pk) ZθJC(t) = r(t) RθJC<br>0.05 RθJC = 1.92 ° C/W MAX<br>0.05<br>D CURVES APPLY FOR POWER<br>0.03 0.02 t1 PULSE TRAIN SHOWN<br>0.02 0.01 SINGLE PULSE DUTY CYCLE, D = t t2 1 /t 2 TREAD TIME AT tJ(pk) - TC = P(pk)1 RθJC(t)<br>0.01<br>0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000<br>t, TIME (ms)<br>μ<br>t, TIME (��s)<br>PD, POWER DISSIPATION (WATTS)<br>r(t) NORMALIZED EFFECTIVE<br>TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 5. Thermal Response** **http://onsemi.com** **3** **2N6667, 2N6668** **==> picture [493 x 599] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>10 5 ms 100 μs There are two limitations on the power handling ability of<br>5 a transistor: average junction temperature and second<br>3 dc breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE<br>1 ms<br>2 limits of the transistor that must be observed for reliable<br>1 operation; i.e., the transistor must not be subjected to greater<br>0.30.5 TJ = 150°C 2N6667 dissipation than the curves indicate.The data of Figure 6 is based on TJ(pk) = 150�C; TC is<br>0.2 BONDING WIRE LIMIT 2N6668 variable depending on conditions. Second breakdown pulse<br>0.1 THERMAL LIMIT @ TC = 25°C limits are valid for duty cycles to 10% provided TJ(pk)J(pk)<br>0.05 SECOND BREAKDOWN LIMIT < 150�C. TJ(pk) may be calculated from the data in Figure 5.�C. TJ(pk) may be calculated from the data in Figure 5.C. TJ(pk) may be calculated from the data in Figure 5.J(pk) may be calculated from the data in Figure 5. may be calculated from the data in Figure 5.<br>0.03 CURVES APPLY BELOW RATED VCEO At high case temperatures, thermal limitations will reduce<br>0.021 2 3 5 7 10 20 30 50 70 100 the power that can be handled to values less than the<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) limitations imposed by second breakdown.<br>Figure 6. Maximum Safe Operating Area<br>10,000 300<br>5000<br>2000 TJ = 25°C<br>1000 200<br>500<br>200 TVCCE = 25 = 4 VOLTS°C Cib Cob<br>100 IC = 3 AMPS 100<br>70<br>50<br>50<br>20<br>10 30<br>1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 0.1 0.2 0.5 1 2 5 10 20 50 100<br>f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 7. Typical Small−Signal Current Gain Figure 8. Typical Capacitance<br>20,000 2.6<br>VCE = 3 V TJ = 25°C<br>10,000 TJ = 150°C 2.2<br>7000<br>5000 IC = 2 A 4 A 6 A<br>1.8<br>3000<br>2000<br>TJ = 25°C<br>1.4<br>1000<br>700<br>500 1<br>TJ = - 55°C<br>300<br>200 0.6<br>0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30<br>IC, COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (mA)<br>IC, COLLECTOR CURRENT (AMPS)<br>C, CAPACITANCE (pF)<br>hFE, SMALL-SIGNAL CURENT GAIN<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCEC − VCE− VCECE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater The data of Figure 6 is based on TJ(pk) = 150�C; TC isJ(pk) = 150�C; TC is = 150�C; TC is�C; TC isC; TC isC is is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)J(pk) < 150�C. TJ(pk) may be calculated from the data in Figure 5.�C. TJ(pk) may be calculated from the data in Figure 5.C. TJ(pk) may be calculated from the data in Figure 5.J(pk) may be calculated from the data in Figure 5. may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 9. Typical DC Current Gain** **Figure 10. Typical Collector Saturation Region** **http://onsemi.com** **4** **2N6667, 2N6668** **==> picture [485 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 3 +�5<br>+�4 hFE�@�VCE� ��3.0�V<br>2.5 TJ = 25°C +�3 *IC/IB ≤ 3<br>25°C to 150°C<br>+�2<br>2 +�1 -�55°C to 25°C<br>0<br>1.5 VBE(sat) @ IC/IB = 250 -�1<br>∗θVC for VCE(sat)<br>-�2<br>1 VBE @ VCE = 3 V -�3 25°C to 150°C<br>θVB for VBE<br>-�4 -�55°C to 25°C<br>0.5 VCE(sat) @ IC/IB = 250 -�5<br>0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)<br>C)°<br>V, VOLTAGE (VOLTS)<br>V, TEMPERATURE COEFFICIENTS (mV/<br>θ<br>**----- End of picture text -----**<br> **Figure 11. Typical “On” Voltages** **Figure 12. Typical Temperature Coefficients** **==> picture [232 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [5]<br>REVERSE FORWARD<br>10 [4]<br>10 [3] VCE = 30 V<br>10 [2]<br>TJ = 150 ° C<br>10 [1]<br>100°C<br>10 [0]<br>25°C<br>10 [-�1]<br>+�0.6 +�0.4 +�0.2 0 -�0.2 -�0.4 -�0.6 -�0.8 -�1 -�1.2 -�1.4<br>VBE, BASE-EMITTER VOLTAGE (VOLTS)<br>μ<br>, COLLECTOR CURRENT (��A)<br>IC<br>**----- End of picture text -----**<br> **Figure 13. Typical Collector Cut−Off Region** **http://onsemi.com** **5** **2N6667, 2N6668** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. |||||||||||||||||||||||||||Y14.5M, 1982.|Y14.5M, 1982.|Y14.5M, 1982.|Y14.5M, 1982.| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||||**−T−**|**SEATING**<br>**PLANE**|2. <br>3.|Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> DIMENSION Z DEFINES A ZONE WHERE ALL|||| |||||||||**B**|||||||**F**|||||**C**||||||BODY AND LEAD IRREGULARITIES ARE|||BODY AND LEAD IRREGULARITIES ARE| |||||||**4**||||||||||**T**|**S**|||||||||ALLOWED.<br>**DIM**<br>**MIN**<br>**MAX**<br>**INCHES**|**MIN**<br>**MAX**<br>**MILLIMETERS**||| |||**Q**|||||||||||**A**|||||||||||||**A**<br>0.570<br>0.620<br>**B**<br>0.380<br>0.415<br>**C**<br>0.160<br>0.190|14.48<br>9.66<br>4.07||15.75<br>10.53<br>4.83| |**H**<br>**Z**<br>**L**<br>**V**<br>**G**<br>**K**<br>**1**<br>**2 3**<br>**D**<br>~~THe~~<br>~~;~~||||||||||||||||**U**|**R**<br>**J**|~~|~~||||||||**D**<br>0.025<br>0.038<br>0.64<br>0.96<br>**F**<br>0.142<br>0.161<br>3.61<br>4.09<br>**G**<br>0.095<br>0.105<br>2.42<br>2.66<br>**H**<br>0.110<br>0.161<br>2.80<br>4.10<br>**J**<br>0.014<br>0.024<br>0.36<br>0.61<br>**K**<br>0.500<br>0.562<br>12.70<br>14.27<br>**L**<br>0.045<br>0.060<br>1.15<br>1.52<br>**N**<br>0.190<br>0.210<br>4.83<br>5.33<br>**Q**<br>0.100<br>0.120<br>2.54<br>3.04<br>**R**<br>0.080<br>0.110<br>2.04<br>2.79<br>**S**<br>0.045<br>0.055<br>1.15<br>1.39<br>**T**<br>0.235<br>0.255<br>5.97<br>6.47<br>**U**<br>0.000<br>0.050<br>0.00<br>1.27<br>**V**<br>0.045<br>---<br>1.15<br>---<br>**Z**<br>---<br>0.080<br>---<br>2.04<br>SSEEe|||| ||||||||||**N**||||||||||||||||||||| |||||||||||||||||||||||||||STYLE 1:|||| |||||||||||||||||||||||||||PIN 1.<br>BASE|||| |||||||||||||||||||||||||||2.<br>COLLECTOR|||| |||||||||||||||||||||||||||3.<br>EMITTER|||| |||||||||||||||||||||||||||4.<br>COLLECTOR|||| 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **2N6667/D** **http://onsemi.com** **6**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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