2N6517CTA

**Share Feedback DATA SHEET** Your Opinion Matters **www.onsemi.com** NPN Epitaxial Silicon Transistor 2N6517 **Features** • ~~a~~ High Voltage Transistor 1 23 1 2 3 • Collector Dissipation: PC(max) = 625 mW **TO−92 3 4.825x4.76 TO−92 3 4.83x4.76** • Complement to 2N6520 **CASE 135AN LEADFORMED** • Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base) **CASE 135AR MARKING DIAGRAM ABSOLUTE MAXIMUM RATINGS** (Values are at TA = 25 ° C unless otherwise noted.) **Symbol Parameter Value Unit** A/2N 6517 VCBO Collector−Base Voltage V YWW 2N6517 350 2N6517C 400 1: Emitter 2: Base VCEO Collector−Emitter Voltage V 3: Collector 2N6517 350 1 2 3 2N6517C 400 VEBO Emitter−Base Voltage 6 V A = Assembly Code 2N6517/2N6517C = Device Code IC Collector Current 500 mA YWW = Date Code PC Collector Power Dissipation 625 mW ~~a~~ TJ Junction Temperature 150 ° C **ORDERING INFORMATION** TSTG Storage Temperature −55 ~ 150 ° C Stresses exceeding those listed in the Maximum Ratings table may damage the **Device Package Shipping** device. If any of these limits are exceeded, device functionality should not be 2N6517TA TO−92 3 10000 / assumed, damage may occur and reliability may be affected. (Pb−Free) Bulk Bag 2N6517CTA TO−92 3 2000 / (Pb−Free) Fan−Fold ~~i=~~ **DISCONTINUED** (Note 1) **Device Package Shipping** 2N6517BU TO−92 3 10000 / (Pb−Free) Bulk Bag ~~a~~ 1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com. © Semiconductor Components Industries, LLC, 2010 **1** Publication Order Number: **June, 2024 − Rev. 4 2N6517/D** 

**2N6517** 

## **ELECTRICAL CHARACTERISTICS** 

(Values are at TA = 25 ° C unless otherwise noted.) 

|(Values are at TA = 25A = 25|(Values are at TA = 25A = 25= 25°C unless otherwise noted.)|||||
|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>|**Conditions**<br>|**Min.**<br>|**Max.**<br>|**Unit**<br>|
|BVCBO<br>~~ee~~|Collector−Base Breakdown Voltage<br>2N6517<br>2N6517C<br>~~ee~~|IC= 100 A, IE= 0<br>IC= 100 A, IE= 0<br>~~ee~~<br>wu|350<br>400<br>~~ee~~|−<br>−<br>~~ee~~|V<br>~~ee~~|
|BVCEO|Collector−Emitter Breakdown Voltage*<br>2N6517<br>2N6517C|IC= 1 mA, IB= 0<br>IC= 1 mA, IB= 0|350<br>400|−<br>−|V|
|BVEBO<br>~~a~~|Emitter−Base Breakdown Voltage<br>~~a~~<br>~~a~~|IE= 10 A, IC= 0|6|−|V|
|ICBO<br>~~a~~|Collector Cut−Off Current<br>~~a~~<br>~~a~~|VCB= 250 V, IE= 0|−|50|nA|
|IEBO<br>~~a~~|Emitter Cut−Off Current|VEB= 5 V, IC= 0|−|50|nA|
|hFE|DC Current Gain*<br>2N6517/2N6517C<br>2N6517/2N6517C<br>2N6517/2N6517C<br>2N6517/2N6517C<br>2N6517/2N6517C<br>2N6517C|VCE= 10 V, IC= 1 mA<br>VCE= 10 V, IC= 10 mA<br>VCE= 10 V, IC= 30 mA<br>VCE= 10 V, IC= 50 mA<br>VCE= 10 V, IC= 100 mA<br>VCE= 10 V, IC= 5 mA|20<br>30<br>30<br>20<br>15<br>50|−<br>−<br>200<br>200<br>−<br>200||
|VCE(sat)|Collector−Emitter Saturation Voltage|IC= 10 mA, IB= 1 mA<br>IC= 20 mA, IB= 2 mA<br>IC= 30 mA, IB= 3 mA<br>IC= 50 mA, IB= 5 mA|−<br>−<br>−<br>−|0.3<br>0.35<br>0.5<br>1|V|
|VBE(sat)|Base−Emitter Saturation Voltage|IC= 10 mA, IB= 1 mA<br>IC= 20 mA, IB= 2 mA<br>IC= 30 mA, IB= 3 mA|−<br>−<br>−|0.75<br>0.85<br>0.9|V|
|Cob<br>~~a~~|Output Capacitance|VCB= 20 V, IE= 0, f = 1 MHz|−|6|pF|
|fT<br>~~a~~|Current Gain Bandwidth Product*<br>|IC= 10 mA, VCE= 20 V, f = 20 MHz<br>|40<br>|200<br>|MHz<br>|
|VBE(on)<br>~~DG~~|Base−Emitter On Voltage<br>~~DG~~|IC= 100 mA, VCE= 10 V,<br>~~DG~~|−<br>~~DG~~|2<br>~~DG~~|V<br>~~DG~~|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle u ≤ 2% 

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**2N6517** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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1000<br>VCE = 10 V<br>100<br>TA = 25 ° C<br>T A  = 75 ° C<br>10<br>TA = 125 ° C<br>1<br>Sail Sartreas i<br>0.1<br>SS eiiiii Sesiti Sei<br>1 10 100 1000<br>IC, Collector Current (mA)<br>, DC Current Gain<br>FE<br>h<br>**----- End of picture text -----**<br>


**Figure 1. DC Current Gain** 

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IC = 10 IB<br>ena<br>1 TA = 25 ° C<br>TA = 125 ° C T A = 75 ° C<br>area<br>0.1<br>1 10 100 1000<br>IC, Collector Current (mA)<br>Figure 3. Saturation Voltage<br>10000<br>1000 oo TA = 125 ° C<br>100 a fF fT |<br>10 TA = 75 ° C<br>guesses<br>1 eee TA = 25 ° C<br>0.1<br>fp fpf<br>50 100 150 200 250 300 350<br>VCB, Collector−Base Voltage (V)<br>, Saturation Voltage (V)<br>BE(sat)<br>V<br>, Collector Cut Off Current (nA)<br>ICBO<br>**----- End of picture text -----**<br>


**Figure 5. Collector Cut Off Current** 

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1000<br>IC = 10 IB<br>100<br>T A  = 125 ° C<br>10<br>TA = 75 ° C<br>1<br>Saran TA = 25 ° C Sai<br>0.1<br>SS eaiiieesiiii Sait<br>1 10 100 1000<br>IC, Collector Current (mA)<br>Figure 2. Saturation Voltage<br>100<br>TA = 125 ° C<br>10<br>1<br>0.1 TA = 75 ° C<br>0.01<br>TA = 25 ° C<br>0.001<br>1 2 3 4 5 6<br>VEB, Emitter−Base Voltage (V)<br>Figure 4. Emitter Cut Off Current<br>1.6<br>VCE = 10 V<br>TA = 25 ° C<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>1 10 100 1000<br>IC, Collector Current (mA)<br>, Saturation Voltage (V)<br>CE(sat)<br>V<br>, Emitter Cut Off Current (nA)<br>IEBO<br>, Base−Emitter On Voltage (V)<br>BE(on)<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Base−Emitter On Voltage** 

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**2N6517** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (CONTINUED) 

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2.0<br>f = 1 MHz<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0 20 40 60 80 100<br>VCB, Collector−Base Voltage (V)<br>, Collector−Base Capacitance (pF)<br>CB<br>C<br>**----- End of picture text -----**<br>


**Figure 7. Output Capacitance** 

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**----- Start of picture text -----**<br>
100 Fp<br>ee eer<br>a ee eee<br>pe NN<br>el eel<br>10 ee ll<br>PpNYa————TTCUTCSTCeeST ST eeee<br>a ee ee ee eee<br>1<br>1 10 100<br>IC, Collector Current (mA)<br>, Current  Gain Bandwidth (MHz)<br>fT<br>**----- End of picture text -----**<br>


**Figure 9. Current Gain Bandwidth Product** 

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50<br>f = 1 MHz<br>4540 eee<br>35 PN EEE<br>2530 Zan.P| ftPoEE Pope _|<br>20<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VEB, Emitter−Base Voltage (V)<br>Figure 8. Input Capacitance<br>1000 ree<br>————<br>a ee > — ee<br>po ee<br>tON<br>eee ee<br>100 eee tr<br>Bs——a eses esssEe<br>td<br>———<br>po<br>VCC = 100 V<br>IC = 5IB1 = −5IB2, TA = 25 ° C<br>10<br>10 100<br>IC, Collector Current (mA)<br>, Emitter−Base Capacitance (pF)<br>EB<br>C<br> Switching Time (ns)<br>ON<br>, t<br>R<br>, t<br>tD<br>**----- End of picture text -----**<br>


**Figure 10. Resistive Load Switching** 

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10000<br>tOFF<br>tstg<br>_<br>1000 esee ee<br>tf<br>}— ss ——_} —_}_+ _{+_}+}<br>100 eses<br>Po r—“CSCCCS<br>V CC  = 100 V<br>IC = 5IB1 = −5IB2, TA = 25 ° C<br>10 ee<br>10 100<br>IC, Collector Current (mA)<br> Switching Time (ns)<br>OFF<br>, t, tf<br>tstg<br>**----- End of picture text -----**<br>


**Figure 11. Resistive Load Switching** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13880G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **TO−92 3 4.83x4.76 LEADFORMED** 

CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

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