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2N6517BU
Bipolar (BJT) Single Transistor, NPN, 350 V, 500 mA, 1.5 W, TO-92, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.5; Available until stocks are exhausted Alternative available
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 1.5W
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 200MHz
- Transistor Case Style: TO-92
- DC Current Gain hFE Min: 15hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 350V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.058 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
## NPN − 2N6515, 2N6517; PNP − 2N6520 ## High Voltage Transistors **NPN and PNP** ## **Features** ## **http://onsemi.com** - Voltage and Current are Negative for PNP Transistors • These are Pb−Free Devices* COLLECTOR 3 2 **MAXIMUM RATINGS** BASE COLLECTOR **NPN Rating Symbol Value Unit** ‘ 3 1 Collector − Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector − Base Voltage VCBO Vdc **PNP** 2N6515 250 2N6517, 2N6520 350 &) 1 EMITTER Emitter − Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current IB 250 mAdc **TO−92** Collector Current − Continuous IC 500 mAdc **CASE 29** Total Device Dissipation @ TA = 25 ° C PD 625 mW **STYLE 1** Derate above 25 ° C 5.0 mW/ ° C Derate above 25Total Device Dissipation @ T ° C C = 25 ° C PD 1.512 mW/W ° C 1 23 1 2 3 Operating and Storage Junction TJ, Tstg −55 to +150 ° C STRAIGHT LEADBULK PACK TAPE & REELBENT LEAD Temperature Range ~~on~~ AMMO PACK **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM** Thermal Resistance, Junction−to−Ambient R JA 200 ° C/W Thermal Resistance, Junction−to−Case R JC 83.3 ° C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. **==> picture [26 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> 2N<br>65xx<br>AYWW<br>**----- End of picture text -----**<br> xx = 15, 17, or 20 A = Assembly Location Y = Year WW = Work Week = Pb−Free Package (Note: Microdot may be in either location) > *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: **2N6515/D** **1** © Semiconductor Components Industries, LLC, 2007 **March, 2007 − Rev. 5** **NPN − 2N6515, 2N6517; PNP − 2N6520** **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Collector−Emitter Breakdown Voltage (Note 1)<br>(IC= 1.0 mAdc, IB= 0)<br>2N6515<br>2N6517, 2N6520|V(BR)CEO|250<br>350|−<br>−|Vdc| |Collector−Base Breakdown Voltage<br>(IC= 100�Adc, IE= 0 )<br>2N6515<br>2N6517, 2N6520|V(BR)CBO|250<br>350|−<br>−|Vdc| |Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)<br>2N6515, 2N6517<br>2N6520|V(BR)EBO|6.0<br>5.0|−<br>−|Vdc| |Collector Cutoff Current<br>(VCB= 150 Vdc, IE= 0)<br>2N6515<br>(VCB= 250 Vdc, IE= 0)<br>2N6517, 2N6520|ICBO|−<br>−|50<br>50|nAdc| |Emitter Cutoff Current<br>(VEB= 5.0 Vdc, IC= 0)<br>2N6515, 2N6517<br>(VEB= 4.0 Vdc, IC= 0)<br>2N6520|IEBO|−<br>−|50<br>50|nAdc| |**ON CHARACTERISTICS**(Note 1)||||| |DC Current Gain<br>(IC= 1.0 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 10 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 30 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 50 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520<br>(IC= 100 mAdc, VCE= 10 Vdc)<br>2N6515<br>2N6517, 2N6520|hFE|35<br>20<br>50<br>30<br>50<br>30<br>45<br>20<br>25<br>15|−<br>−<br>−<br>−<br>300<br>200<br>220<br>200<br>−<br>−|−| |Collector−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>(IC= 20 mAdc, IB= 2.0 mAdc)<br>(IC= 30 mAdc, IB= 3.0 mAdc)<br>(IC= 50 mAdc, IB= 5.0 mAdc)|VCE(sat)|−<br>−<br>−<br>−|0.30<br>0.35<br>0.50<br>1.0|Vdc| |Base−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>(IC= 20 mAdc, IB= 2.0 mAdc)<br>(IC= 30 mAdc, IB= 3.0 mAdc)|VBE(sat)|−<br>−<br>−|0.75<br>0.85<br>0.90|Vdc| |Base−Emitter On Voltage<br>(IC= 100 mAdc, VCE= 10 Vdc)|VBE(on)|−|2.0|Vdc| |**SMALL−SIGNAL CHARACTERISTICS**||||| |Current−Gain − Bandwidth Product (Note 1)<br>(IC= 10 mAdc, VCE= 20 Vdc, f = 20 MHz)|fT|40|200|MHz| |Collector−Base Capacitance<br>(VCB= 20 Vdc, IE= 0, f = 1.0 MHz)|Ccb|−|6.0|pF| |Emitter−Base Capacitance<br>(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)<br>2N6515, 2N6517<br>2N6520|Ceb|−<br>−|80<br>100|pF| |**SWITCHING CHARACTERISTICS**||||| |Turn−On Time<br>(VCC= 100 Vdc, VBE(off)= 2.0 Vdc, IC= 50 mAdc, IB1= 10 mAdc)|ton|−|200|�s| |Turn−Off Time<br>(VCC= 100 Vdc, IC= 50 mAdc, IB1= IB2= 10 mAdc)|toff|−|3.5|�s| 1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. **http://onsemi.com** **2** **NPN − 2N6515, 2N6517; PNP − 2N6520** **==> picture [237 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>VCE = 10 V TJ = 125°C<br>100 25°C<br>70<br>−�55°C<br>50<br>30<br>20<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br> **Figure 1. DC Current Gain NPN 2N6515** **==> picture [486 x 392] intentionally omitted <==** **----- Start of picture text -----**<br> 200 200<br>VCE = 10 V TJ = 125°C VCE = −10 V TJ = 125°C<br>100 100<br>25°C 25°C<br>70 70<br>−�55°C<br>50 50<br>−�55 °C<br>30 30<br>20 20<br>10 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. DC Current Gain Figure 3. DC Current Gain<br>NPN 2N6517 PNP 2N6520<br>100 100<br>70 70<br>50 50<br>TJ = 25°C TJ = 25°C<br>30 VCE = 20 V 30 VCE = −�20 V<br>f = 20 MHz f = 20 MHz<br>20 20<br>10 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>f�, CURRENT−GAIN � BANDWIDTH PRODUCT (MHz)T f�, CURRENT−GAIN � BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br> **Figure 4. Current−Gain − Bandwidth Product NPN 2N6515, 2N6517** **Figure 5. Current−Gain − Bandwidth Product PNP 2N6520** **http://onsemi.com** **3** **NPN − 2N6515, 2N6517; PNP − 2N6520** **==> picture [242 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> −1.4<br>−1.2 TJ = 25°CJ = 25°C = 25°C°CC<br>−1.0<br>−0.8 VBE(sat) @ IC/IB = 10BE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>−0.6 VBE(on) @ VCE = −10 VBE(on) @ VCE = −10 V @ VCE = −10 VCE = −10 V = −10 V<br>−0.4<br>−0.2 VCE(sat) @ IC/IB = 10CE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0 VCE(sat) @ IC/IB = 5.0CE(sat) @ IC/IB = 5.0 @ IC/IB = 5.0C/IB = 5.0/IB = 5.0B = 5.0 = 5.0<br>−1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **==> picture [490 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 −1.4<br>TJ = 25°C<br>1.2 −1.2 TJ = 25°CJ = 25°C = 25°C°CC<br>1.0 −1.0<br>0.8 VBE(sat) @ IC/IB = 10 −0.8 VBE(sat) @ IC/IB = 10BE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0.6 VBE(on) @ VCE = 10 V −0.6 VBE(on) @ VCE = −10 VBE(on) @ VCE = −10 V @ VCE = −10 VCE = −10 V = −10 V<br>0.4 −0.4<br>0.2 VCE(sat) @ IC/IB = 10 −0.2 VCE(sat) @ IC/IB = 10CE(sat) @ IC/IB = 10 @ IC/IB = 10C/IB = 10/IB = 10B = 10 = 10<br>0 VCE(sat) @ IC/IB = 5.0 0 VCE(sat) @ IC/IB = 5.0CE(sat) @ IC/IB = 5.0 @ IC/IB = 5.0C/IB = 5.0/IB = 5.0B = 5.0 = 5.0<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)C, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 6. “On” Voltages Figure 7. “On” Voltages<br>NPN 2N6515, 2N6517 PNP 2N6520<br>2.5 2.5<br>2.0 IC � 10 2.0 IC � 10<br>IB IB<br>1.5 1.5<br>1.0 25°C to 125°C 1.0 25°C to 125°C<br>0.50 R�VC for VCE(sat) 0.50 R�VB for VBE −�55°C to<br>−�55 °C to 25°C<br>−�0.5 25°C −�0.5<br>−�1.0 −�1.0<br>−�55 °C to 125°C<br>−�1.5 R�VB for VBE −�1.5 R�VC for VCE(sat) −�55°C to 125°C<br>−�2.0 −�2.0<br>−�2.5 −�2.5<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 8. Temperature Coefficients<br>Figure 9. Temperature Coefficients<br>NPN 2N6515, 2N6517<br>PNP 2N6520<br>100 100<br>5070 TJ = 25°C 5070 Ceb TJ = 25°C<br>30 Ceb 30<br>20 20<br>10 10<br>7.0 7.0 Ccb<br>5.0 5.0<br>Ccb<br>3.0 3.0<br>2.0 2.0<br>1.0 1.0<br>0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 −�0.2 −�0.5 −�1.0 −�2.0 −�5.0 −�10 −�20 −�50 −�10 −�20<br>VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) 0 0<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>° °<br>V, TEMPERATURE COEFFICIENTS (mV/ C)θ V, TEMPERATURE COEFFICIENTS (mV/ C)θ<br>R R<br>C, CAPACITANCE (pF) C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **==> picture [99 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 10. Capacitance<br>NPN 2N6515, 2N6517<br>**----- End of picture text -----**<br> **Figure 11. Capacitance PNP 2N6520** **http://onsemi.com** **4** **NPN − 2N6515, 2N6517; PNP − 2N6520** **==> picture [487 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0�k 1.0�k<br>700 700<br>500 VCE(off) = 100 V 500 td @ VBE(off) = 2.0 V VCE(off) = −100 V<br>300 td @ VBE(off) = 2.0 V ITCJ/I = 25B = 5.0°C 300 ITCJ/I = 25B = 5.0°C<br>200 200 tr<br>tr<br>100 100<br>70 70<br>50 50<br>30 30<br>20 20<br>10 10<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>t, TIME (ns) t, TIME (ns)<br>**----- End of picture text -----**<br> **Figure 12. Turn−On Time NPN 2N6515, 2N6517** **Figure 13. Turn−On Time PNP 2N6520** **==> picture [488 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 10�k 2.0�k<br>7.0�k ts<br>5.0�k ts 1.0�k<br>700<br>3.0�k<br>500<br>2.0�k 300 tf VCE(off) = −100 V<br>VCE(off) = 100 V IC/IB = 5.0<br>1.0�k tf IC/IB = 5.0 200 IB1 = IB2<br>700 IB1 = IB2 TJ = 25°C<br>500 TJ = 25°C 100<br>70<br>300<br>50<br>200<br>30<br>100 20<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 −1.0 −�2.0 −�3.0 −�5.0 −�7.0 −10 −�20 −�30 −�50 −�70 −100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 14. Turn−Off Time Figure 15. Turn−Off Time<br>NPN 2N6515, 2N6517 PNP 2N6520<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **==> picture [400 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> +VCC<br>VCC ADJUSTED 2.2 k<br>+10.8 V FOR VCE(off) = 100 V 20 k 50 � SAMPLING SCOPE<br>1.0 k<br>50<br>−9.2 V 1/2MSD7000<br>PULSE WIDTH ≈ 100 �s<br>tr, tf ≤ 5.0 ns APPROXIMATELY<br>DUTY CYCLE ≤ 1.0% −1.35 V (ADJUST FOR V(BE)off = 2.0 V)<br>FOR PNP TEST CIRCUIT,<br>REVERSE ALL VOLTAGE POLARITIES<br>**----- End of picture text -----**<br> **Figure 16. Switching Time Test Circuit** **http://onsemi.com** **5** **NPN − 2N6515, 2N6517; PNP − 2N6520** **==> picture [487 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.7<br>D = 0.5<br>0.5<br>0.2<br>0.3<br>0.2<br>SINGLE PULSE<br>0.1 0.05<br>0.1<br>0.07 SINGLE PULSE<br>0.05<br>0.03 Z�JC(t) = r(t) • R�JC TJ(pk) − TC = P(pk) Z�JC(t)<br>Z�JA(t) = r(t) • R�JA TJ(pk) − TA = P(pk) Z�JA(t)<br>0.02<br>0.01<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k 5.0�k 10�k<br>t, TIME (ms)<br>Figure 17. Thermal Response<br>500 FIGURE A<br>200 TA = 25°C 100 �s 10 �s<br>tP<br>100 TC = 25°C 1.0 ms<br>PP PP<br>50 100 ms<br>20<br>CURRENT LIMIT<br>10<br>THERMAL LIMIT<br>5.0 �(PULSE CURVES @ TC = 25°C) t1<br>SECOND BREAKDOWN LIMIT<br>2.0<br>CURVES APPLY 2N6515 1/f<br>1.0<br>0.5 BELOW RATED VCEO 2N6517, 2N6520 DUTY�CYCLE � t1�f � [t][1]<br>0.5 1.0 2.0 5.0 10 20 50 100 200 500 tP<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (mA)<br>**----- End of picture text -----**<br> **Figure 18. Active Region Safe Operating Area** **Design Note: Use of Transient Thermal Resistance Data** ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |2N6515RLRMG|TO−92<br>(Pb−Free)|2000 Ammo Pack| |2N6517G|TO−92<br>(Pb−Free)|5000 Unit / Bulk| |2N6517RLRPG|TO−92<br>(Pb−Free)|2000 Ammo Pack| |2N6520RLRAG|TO−92<br>(Pb−Free)|2000 Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **http://onsemi.com** **6** **NPN − 2N6515, 2N6517; PNP − 2N6520** ## **PACKAGE DIMENSIONS** ## **TO−92 (TO−226)** CASE 29−11 ISSUE AM **==> picture [204 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>B STRAIGHT LEAD<br>BULK PACK<br>| rn<br>R<br>a<br>P<br>L<br>SEATING<br>PLANE K<br>ier,<br>X X D<br>G<br>H J<br>V C<br>a <— ‘’<br>SECTION X−X<br>1 N<br>N<br>ae<br>**----- End of picture text -----**<br> **==> picture [64 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> STRAIGHT LEAD<br>BULK PACK<br>**----- End of picture text -----**<br> NOTES: |1. <br>2. <br>3. <br>4.|DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> CONTOUR OF PACKAGE BEYOND DIMENSION R<br>IS UNCONTROLLED.<br> LEAD DIMENSION IS UNCONTROLLED IN P AND<br>BEYOND DIMENSION K MINIMUM.<br>DIM<br>MIN<br>MAX<br>MIN<br>MAX<br>MILLIMETERS<br>INCHES<br>A<br>0.175<br>0.205<br>4.45<br>5.20<br>—|DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br> CONTROLLING DIMENSION: INCH.<br> CONTOUR OF PACKAGE BEYOND DIMENSION R<br>IS UNCONTROLLED.<br> LEAD DIMENSION IS UNCONTROLLED IN P AND<br>BEYOND DIMENSION K MINIMUM.<br>DIM<br>MIN<br>MAX<br>MIN<br>MAX<br>MILLIMETERS<br>INCHES<br>A<br>0.175<br>0.205<br>4.45<br>5.20<br>—| |---|---|---| ||B<br>0.170<br>0.210<br>4.32<br>5.33|| ||C<br>0.125<br>0.165<br>3.18<br>4.19|| ||D<br>0.016<br>0.021<br>0.407<br>0.533|| ||G<br>0.045<br>0.055<br>1.15<br>1.39<br>H<br>0.095<br>0.105<br>2.42<br>2.66<br>J<br>0.015<br>0.020<br>0.39<br>0.50<br>K<br>0.500<br>−−−<br>12.70<br>−−−<br>L<br>0.250<br>−−−<br>6.35<br>−−−<br>N<br>0.080<br>0.105<br>2.04<br>2.66<br>P<br>−−−<br>0.100<br>−−−<br>2.54<br>R<br>0.115<br>−−−<br>2.93<br>−−−<br>V<br>0.135<br>−−−<br>3.43<br>−−−<br>Ss<br>a ee ee<br>|<br>=====|| 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. **==> picture [393 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> R A B BENT LEAD NOTES:1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>a 2. CONTROLLING DIMENSION:<br>AMMO PACK MILLIMETERS.<br>3. CONTOUR OF PACKAGE BEYOND<br>DIMENSION R IS UNCONTROLLED.<br>P 4. LEAD DIMENSION IS UNCONTROLLED IN<br>T P AND BEYOND DIMENSION K MINIMUM.<br>SEATINGPLANE K DIM MILLIMETERSMIN MAX<br>A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>a X X D GD 0.402.40 0.542.80<br>G J 0.39 0.50<br>J K 12.70 −−−<br>ti = N 2.04 2.66<br>“Ute V C 7 PR 1.502.93 4.00−−−<br>| i SECTION X−X = V 3.43 −−−<br>1 N STYLE 1:<br>PIN 1. EMITTER<br>ic a 2. BASE<br>3. COLLECTOR<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **ON Semiconductor Website** : **www.onsemi.com** **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5773−3850 Sales Representative **http://onsemi.com** **2N6515/D** **7**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 420,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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