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2N6517BU

Bipolar (BJT) Single Transistor, NPN, 350 V, 500 mA, 1.5 W, TO-92, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:200MHz; Power Dissipation Pd:1.5; Available until stocks are exhausted Alternative available
  • MSL: MSL 1 - Unlimited
  • SVHC: No SVHC (15-Jan-2018)
  • No. of Pins: 3Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 1.5W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: NPN
  • Transition Frequency: 200MHz
  • Transistor Case Style: TO-92
  • DC Current Gain hFE Min: 15hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 500mA
  • Collector Emitter Voltage Max: 350V
Delivery and price
Units per pack 1000
Price 0.058 €
Current stock 1000+
Lead time 7 days
PDF File icon Datasheet

Updated at March 14, 2026