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2N6403G
Thyristor, 400 V, 30 mA, 16 A, 16 A, TO-220AB, 3 Pins
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- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:400V; Gate Trigger Current Max, Igt:30mA; Current It av:16A; On State RMS Current IT(rms):16A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Peak
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Through Hole
- Holding Current Max: 40mA
- On State RMS Current: 16A
- Thyristor Case Style: TO-220AB
- Average On State Current: 16A
- Gate Trigger Current Max: 30mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 160A
- Peak Repetitive Off State Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.553 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**Thyristors** Surface Mount – 50 - 800V > 2N6400 ~~Pb Q~~ ## 2N6400 ## **Description** Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. ## **Features** - Glass Passivated Junctions for Greater Parameter Uniformity and Stability - Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability - Blocking Voltage to 800 V - These are Pb−Free devices **==> picture [504 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Out Functional Diagram<br>SS Ss<br>4<br>TO 220AB<br>CASE 221A 2N640xG<br>STYLE 3 f e AYWW<br>1 Additional Information<br>2<br>3<br>a<br>Datasheet Resources Samples<br>|| 7 oo<br>**----- End of picture text -----**<br> © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 Surface Mount – 50 - 800V > 2N6400 **==> picture [94 x 32] intentionally omitted <==** ## **Thyristors** **Maximum Ratings †** (TJ = 25°C unless otherwise noted) **==> picture [507 x 581] intentionally omitted <==** **----- Start of picture text -----**<br> Rating Part Number Symbol Value Unit<br>2N6400 50<br>2N6401 100<br>Peak Repetitive Off-State Voltage (Note 1) 2N6402 VDRM, 200 V<br>(TJ = -40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6403 VRRM 400<br>2N6404 600<br>2N6405 800<br>On-State RMS Current<br>I 16 A<br>(180° Conduction Angles; TC = 100°C) T (RMS)<br>Average On-State RMS Current<br>I 10 A<br>(180° Conduction Angles; TC = 100°C) T (AV)<br>Peak Non−Repetitive Surge Current<br>(1/2 Cycle, Sine Wave, 60 Hz, TJ = 90°C) ITSM 160 A<br>Circuit Fusing Considerations (t = 8.3 ms) I [2] t 145 A [2] s<br>Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 100°C) PGM 20 W<br>Forward Average Gate Power (t = 8.3 ms, TC = 100°C) PG(AV) 0.5 W<br>Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 100°C) IGM 2.0 A<br>Operating Junction Temperature Range TJ -40 to +125 °C<br>Storage Temperature Range Tstg -40 to +125 °C<br>†Indicates JEDEC Registered Data<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is<br>not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent<br>with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.<br>Maximum Ratings † (TJ = 25°C unless otherwise noted)<br>Rating Symbol Value Unit<br> Thermal Resistance, Junction-to-Case RΘJC 1.5 °C/W<br>Maximum Lead Temperature for Soldering Purposes, 1/8” from T 260 °C<br>case for 10 seconds L<br>**----- End of picture text -----**<br> † Indicates JEDEC Registered Data © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 **Thyristors** Surface Mount – 50 - 800V > 2N6400 **==> picture [94 x 32] intentionally omitted <==** **Electrical Characteristics - OFF** (TC = 25°C unless otherwise noted) **==> picture [508 x 531] intentionally omitted <==** **----- Start of picture text -----**<br> Characteristic Symbol Min Typ Max Unit<br>†Peak Repetitive Blocking Current TJ = 25°C IDRM, - - 1.0 µA<br>(VAK = VDRM = VRRM; Gate Open) TJ = 125°C IRRM - - 2.0 mA<br>Electrical Characteristics - ON<br>Characteristic Symbol Min Typ Max Unit<br>†Peak Forward On−State Voltage (ITM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%) VTM − – 1.7 V<br>†Gate Trigger Voltage (Continuous DC), All Quadrants TC = 25°C − 9.0 30<br>(Continuous dc) (VD = 12 Vdc, RL = 100 Ω) TC= -40°C IGT − − 60 mA<br>TC = 25°C − 0.7 1.5<br>†Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ω) VGT V<br>TC= -40°C − − 2.5<br>Gate Non−Trigger Voltage (VD = 12 Vdc, RL = 100 Ω) TC = +125°C VGD 0.2 − − V<br>TC = 25°C − 18 40<br>†Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) IH mA<br>TC= -40°C − − 60<br>Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) tgt − 1.0 – µs<br>TC = 25°C − 15 −<br>Turn-Off Time (ITM = 16 A, IR = 16 A, VD = Rated VDRM) tq µs<br>TJ= +125°C − 35 −<br>†Indicates JEDEC Registered Data<br>Dynamic Characteristics<br>Characteristic Symbol Min Typ Max Unit<br>Critical Rate−of−Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform) TJ= +125°C dv/dt(c) − 50 − V/µs<br>**----- End of picture text -----**<br> © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 **Thyristors** Surface Mount – 50 - 800V > 2N6400 **==> picture [94 x 32] intentionally omitted <==** ## **Voltage Current Characteristic of SCR** **==> picture [231 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>**----- End of picture text -----**<br> **==> picture [242 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> I<br>I<br>I<br>**----- End of picture text -----**<br> **==> picture [505 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Current Derating Figure 2. Maximum On-State Power Dissipation<br>°<br>α TJ ≈ °C ° °<br>α = CONDUCTION ANGLE °<br>α °<br>dc<br>° α<br>α ° ° ° ° α = CONDUCTION ANGLE<br>7.0<br>IT(AV)<br>**----- End of picture text -----**<br> © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 **Thyristors** Surface Mount – 50 - 800V > 2N6400 **==> picture [94 x 32] intentionally omitted <==** **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. On−State Characteristics<br>**----- End of picture text -----**<br> **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 4. Maximum Non−Repetitive Surge Current<br>**----- End of picture text -----**<br> **==> picture [504 x 378] intentionally omitted <==** ## **Figure 5. Thermal Response** **==> picture [504 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 **Thyristors** Surface Mount – 50 - 800V > 2N6400 **==> picture [94 x 32] intentionally omitted <==** ## **Typical Characteristics** **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Typical Gate Trigger Current vs. Pulse Width<br>**----- End of picture text -----**<br> **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Typical Gate Trigger Current vs. Junction Temperature<br>**----- End of picture text -----**<br> **==> picture [505 x 171] intentionally omitted <==** **Figure 8. Typical Gate Trigger Voltage vs. Junction Temperature** **Figure 9. Typical Holding Current vs. Junction Temperature** **==> picture [505 x 171] intentionally omitted <==** © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17 **Thyristors** Surface Mount – 50 - 800V > 2N6400 **==> picture [94 x 32] intentionally omitted <==** ## **Dimensions** ## **Part Marking System** **==> picture [207 x 162] intentionally omitted <==** **----- Start of picture text -----**<br> SEATING<br>PLANE<br>B F C<br>T<br>S<br>4<br>Q A<br>12 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br> **==> picture [154 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>TO 220AB<br>CASE 221A 2N640xG<br>STYLE 3 AYWW<br>1<br>2<br>3<br>x= 0, 1, 2, 3, 4 or 5<br>A= Assembly Location<br>Y= Year<br>WW = Work Week<br>G= Pb Free Package<br>**----- End of picture text -----**<br> **==> picture [191 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.570 0.620 14.48 15.75<br>B 0.380 0.405 9.66 10.28<br>C 0.160 0.190 4.07 4.82<br>D 0.025 0.035 0.64 0.88<br>F 0.142 0.147 3.61 3.73<br>G 0.095 0.105 2.42 2.66<br>H 0.110 0.155 2.80 3.93<br>J 0.014 0.022 0.36 0.55<br>K 0.500 0.562 12.70 14.27<br>L 0.045 0.060 1.15 1.52<br>N 0.190 0.210 4.83 5.33<br>Q 0.100 0.120 2.54 3.04<br>R 0.080 0.110 2.04 2.79<br>S 0.045 0.055 1.15 1.39<br>T 0.235 0.255 5.97 6.47<br>U 0.000 0.050 0.00 1.27<br>V 0.045 −−− 1.15 −−−<br>Z −−− 0.080 −−− 2.04<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. **==> picture [245 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Assignment<br>1 Cathode<br>2 Anode<br>3 Gate<br>4 Anode<br>Ordering Information<br>Device Package Shipping<br>2N6400G<br>2N6401G<br>500 Units / Box<br>2N6402G<br>TO-220AB<br>2N6403G<br>(Pb-Free)<br>2N6403TG 50 Units / Rail<br>2N6404G<br>500 Units / Box<br>2N6405G<br>**----- End of picture text -----**<br> 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. **Disclaimer Notice** - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/15/17
Updated at April 26, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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