2N6338G

BIPOLAR TRANSISTOR, NPN, 100V, TO-3

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.

Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
No. of Pins: 2Pins
Product Range: 2NXXXX Series
Power Dissipation: 200W
DC Current Gain hFE: 40hFE
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 40MHz
Transistor Case Style: TO-204
DC Current Gain hFE Min: 40hFE
Operating Temperature Max: 200°C
Continuous Collector Current: 25A
Collector Emitter Voltage Max: 100V

Delivery and price
Units per pack	500
Price	11.08 €
Current stock	10+
Lead time	30 days

Datasheet

2N6338, 2N6341 

## High-Power NPN Silicon Transistors 

. . . designed for use in industrial−military power amplifier and switching circuit applications. 

- High Collector−Emitter Sustaining Voltage − 

      - VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 

- High DC Current Gain − 

   - hFE = 30 − 120 @ IC = 10 Adc = 12 (Min) @ IC = 25 Adc 

- Low Collector−Emitter Saturation Voltage − 

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc 

- Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max) 

- Pb−Free Packages are Available 

|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>**Rating**<br>ÎÎÎ<br>**ÎÎÎÎ**|**ÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**|ÎÎÎÎÎÎÎÎÎÎ<br>**Î**<br>**ÎÎÎÎ**<br>Î**Î**<br>**ÎÎ**<br>**2N6338**|ÎÎÎÎÎÎÎÎÎÎ<br>**Î**<br>**ÎÎ**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>**2N6341**|ÎÎÎÎÎÎÎÎÎÎ<br>**Î**<br>**ÎÎÎ**<br>ÎÎ<br>**ÎÎ**<br>**Unit**|
|---|---|---|---|---|
|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>Collector−Base Voltage<br>**ÎÎÎÎ**|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>VCB|**ÎÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎ**<br>120|**ÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎ**<br>180|**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>Vdc|
|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Voltage<br>**ÎÎÎÎ**|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>VCEO|**ÎÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎ**<br>100|**ÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎ**<br>150|**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>Vdc|
|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>Emitter−Base Voltage<br>**ÎÎÎÎ**|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>VEB|**ÎÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>6.0<br>**ÎÎÎ**||**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>Vdc|
|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>Collector Current<br>Continuous<br>Peak<br>ÎÎÎ<br>**ÎÎÎÎ**|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>IC|**ÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**Î**<br>**ÎÎÎÎ**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>25<br>50<br>ÎÎÎ<br>**ÎÎÎ**||**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ÎÎÎ<br>**ÎÎÎ**<br>Adc|
|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>Base Current<br>**ÎÎÎÎ**|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>IB|**ÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>10<br>**ÎÎÎ**||**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>Adc|
|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>ÎÎÎÎ<br>ÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>Total Device Dissipation<br>@ TC= 25 C<br>Derate above 25 C<br>ÎÎÎ<br>**ÎÎÎÎ**|**ÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎ**<br>ÎÎÎÎ<br>**ÎÎÎ**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>PD|**ÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**Î**<br>**ÎÎÎÎ**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>200<br>1.14<br>ÎÎÎ<br>**ÎÎÎ**||**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ÎÎÎ<br>**ÎÎÎ**<br>W<br>W/°C|
|**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎ<br>Operating and Storage<br>Junction<br>Temperature Range<br>ÎÎÎ<br>ÎÎÎ|**ÎÎÎ**<br>**ÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎ<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>TJ, Tstg|**ÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**Î**<br>**Î**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>–65 to +200<br>Î<br>ÎÎÎ||**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>Î<br>Î<br>ÎÎÎ<br>C|



## **http://onsemi.com 25 AMPERE POWER TRANSISTORS NPN SILICON** ~~:~~ **TO−204AA CASE 1−07** 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|2N6338|TO−204AA|100 Units / Tray|
|2N6338G|TO−204AA<br>(Pb−Free)|100 Units / Tray|
|2N6341|TO−204AA|100 Units / Tray|
|2N6341G|TO−204AA<br>(Pb−Free)|100 Units / Tray|



ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ **THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic** ÎÎÎ **Symbol** ÎÎÎÎÎÎÎ **Î Max** Î **Î** ÎÎ **Unit ÎÎÎÎÎÎÎÎÎÎÎÎ** Thermal Resistance, Junction to Case **ÎÎÎÎ** θ JC 0.875 **ÎÎ** C/W **Î** ~~———~~ ÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. MaximumÎÎÎ ~~ee~~ **Î** Î **Î** ÎÎ Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data. 

Publication Order Number: **2N6338/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **October, 2011 − Rev. 12** 

**2N6338, 2N6341** 

|200||
|---|---|
|75<br>50<br>25<br>PD, POWER DISSIPATION (WATTS)<br>175<br>150<br>125<br>100||
|0||
|0<br>25<br>50<br>75<br>100<br>125<br>150<br>175<br>200||
|TC, CASE TEMPERATURE (°C)||
|**Figure 1. Power Derating**||
|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>***ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ||
|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ||
|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (1)<br>2N6338<br>(IC= 50 mAdc, IB= 0)<br>2N6341<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>100<br>150<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 50 Vdc, IB= 0)<br>2N6338<br>(VCE= 75 Vdc, IB= 0)<br>2N6341<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>50<br>50<br>ÎÎ<br>**ÎÎ**<br>μAdc||
|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= Rated VCEO, VEB(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VEB(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>10<br>1.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>μAdc<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCB= Rated VCB, IE= 0)<br>**ÎÎÎÎÎ**<br>ICBO<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>10<br>**ÎÎ**<br>μAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 6.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>100<br>ÎÎ<br>μAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS (1)**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain)<br>(IC= 0.5 Adc, VCE= 2.0 Vdc)<br>(IC= 10 Adc, VCE= 2.0 Vdc)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>50<br>30<br>12<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>120<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 1.0 Adc)<br>ÎÎÎÎÎ<br>VCE(sat)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.0<br>ÎÎ<br>Vdc||
|**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>(IC= 25 Adc, IB= 2.5 Adc)<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>1.8<br>**ÎÎ**||
|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 1.0 Adc)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.8<br>2.5<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (IC= 10 Adc, VCE= 2.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.8<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (2)<br>(IC= 1.0 Adc, VCE= 10 Vdc, ftest= 10 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>ÎÎÎÎÎ<br>Cob<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>300<br>ÎÎ<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SWITCHING CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Rise Time (VCC ≈80 Vdc, IC= 10Adc, IB1= 1.0 Adc, VBE(off)= 6.0 Vdc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>tr<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.3<br>ÎÎ<br>**ÎÎ**<br>μs<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Storage Time (VCC ≈80 Vdc, IC= 10 Adc, IB1= IB2= 1.0 Adc)<br>**ÎÎÎÎÎ**<br>ts<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>μs<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Fall Time (VCC ≈80 Vdc, IC= 10 Adc, IB1= IB2= 1.0 Adc)<br>ÎÎÎÎÎ<br>tf<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>0.25<br>ÎÎ<br>μs<br>*Indicates JEDEC Registered Data.||
|(1) Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.||
|(2) fT= |hfe|•ftest.||



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**2N6338, 2N6341** 

**==> picture [490 x 580] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>VCC<br>700<br>+ 80 V VCC = 80 V<br>500<br>R8.0 OHMSC 300 td @ VBE(off) = 6.0 V TICJ/I = 25B = 10°C<br>10 μs RB SCOPE 200<br>+ 11 V 10 OHMS<br>0 100 tr<br>70<br>1N4933<br>- 9.0 V 50<br>tr, tf � 10 ns - 5.0 V 30<br>DUTY CYCLE = 1.0%<br>20<br>NOTE: For information on Figures 3 and 6, RB and RC were 10<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>varied to obtain desired test conditions.<br>IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Switching Time Test Circuit Figure 3. Turn−On Time<br>1.0<br>0.7 D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1 0.1 P(pk) θ JC  = r(t) θ JC<br>0.07 0.05 θ JC = 0.875°C/W MAX<br>0.02<br>D CURVES APPLY FOR POWER<br>0.05<br>t 1 PULSE TRAIN SHOWN<br>0.03 0.01 t 2 READ TIME AT t1<br>0.02 SINGLE PULSE DUTY CYCLE, D = t 1 /t 2 TJ(pk) - TC = P(pk) θJC(t)<br>0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME (ms)<br>Figure 4. Thermal Response<br>100 There are two limitations on the power handling ability of<br>50 a transistor: average junction temperature and second<br>20 200 μs breakdown. Safe operating area curves indicate IC−VC−V−VCE<br>10 1.0 ms limits of the transistor that must be observed for reliable<br>dc<br>5.02.0 TJ = 200°C 5.0 ms operation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.dissipation than the curves indicate.<br>1.0 BONDING WIRE LIMITED The data of Figure 5 is based on TJ(pk) = 200�C; TCJ(pk) = 200�C; TC = 200�C; TC�C; TCC; TCC is<br>0.5 THERMALLY LIMITED @  variable depending on conditions. Second breakdown pulse<br>0.2 TC = 25°C (SINGLE PULSE) limits are valid for duty cycles to 10% provided TJ(pk)<br>0.050.1 SECOND BREAKDOWNLIMITED CURVES APPLYBELOW RATED VCEO 2N63382N6341 Figure 4. At high case temperatures, thermal limitations will� 200�C. TJ(pk) may be calculated from the data in� 200�C. TJ(pk) may be calculated from the data in 200�C. TJ(pk) may be calculated from the data in�C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in<br>0.02 reduce the power that can be handled to values less than the<br>0.012.0 3.0 5.0 7.0 10 20 30 50 70 100 200 limitations imposed by second breakdown.<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>t, TIME (ns)<br>r(t), EFFECTIVE TRANSIENT<br>THERMAL RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC−VC−V−VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.dissipation than the curves indicate. 

The data of Figure 5 is based on TJ(pk) = 200�C; TCJ(pk) = 200�C; TC = 200�C; TC�C; TCC; TCC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) Figure 4. At high case temperatures, thermal limitations will� 200�C. TJ(pk) may be calculated from the data in� 200�C. TJ(pk) may be calculated from the data in 200�C. TJ(pk) may be calculated from the data in�C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 5. Active Region Safe Operating Area** 

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**2N6338, 2N6341** 

**==> picture [233 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
5.0<br>3.0 VCC = 80 V<br>2.0 ts IB1 = IB2<br>IC/IB = 10<br>1.0 TJ = 25°C<br>0.7<br>0.5<br>0.3<br>0.2 tf<br>0.1<br>0.07<br>0.05<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30<br>IC, COLLECTOR CURRENT (AMP)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br>


**Figure 6. Turn−Off Time** 

**==> picture [238 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
5000<br>3000 TJ = 25°C<br>Cib<br>2000<br>1000<br>700<br>500<br>300<br>200 Cob<br>100<br>70<br>50<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance** 

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**2N6338, 2N6341** 

## **PACKAGE DIMENSIONS** 

**TO−204AA (TO−3** CASE 1−07 ISSUE Z 

**==> picture [336 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
A<br>N NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>zs) C Y14.5M, 1982.<br>−T− SEATING 2. CONTROLLING DIMENSION: INCH.<br>E PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH<br>REFERENCED TO-204AA OUTLINE SHALL APPLY.<br>D 2 PL K<br>INCHES MILLIMETERS<br>0.13 (0.005) M T Q M Y [M] DIM MIN MAX MIN MAX<br>7 tt A 1.550 REF 39.37 REF<br>U −Y− B --- 1.050 --- 26.67<br>V L = a C 0.250 0.335 6.35 8.51<br>D 0.038 0.043 0.97 1.09<br>2 E 0.055 0.070 1.40 1.77<br>G B G 0.430 BSC 10.92 BSC<br>H 1 H 0.215 BSC 5.46 BSC<br>K 0.440 0.480 11.18 12.19<br>L 0.665 BSC 16.89 BSC<br>−Q− N --- 0.830 --- 21.08<br>= ———— Q 0.151 0.165 3.84 4.19<br>0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC<br>a V 0.131 0.188 3.33 4.77<br>STYLE 1:<br>PIN 1. BASE<br>2. EMITTER<br>CASE: COLLECTOR<br>**----- End of picture text -----**<br>


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Updated at February 9, 2023

onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.

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