2N6308

Bipolar (BJT) Single Transistor, NPN, 350 V, 8 A, 125 W, TO-3, Through Hole

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Manufacturer: MULTICOMP PRO
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:350V; Transition Frequency ft:5MHz; Power Dissipation Pd:125W; DC Collector Current:8A; DC Current Gain hFE:60hFE; Transistor Case Style:TO-3; No. o
MSL: -
SVHC: No SVHC (19-Jan-2021)
No. of Pins: 2Pins
Product Range: -
Qualification: -
Power Dissipation: 125W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 5MHz
Transistor Case Style: TO-3
DC Current Gain hFE Min: 60hFE
Operating Temperature Max: 200°C
Continuous Collector Current: 8A
Collector Emitter Voltage Max: 350V

Delivery and price
Units per pack	1000
Price	2.04 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 16, 2026