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2N6287G
Bipolar (BJT) Single Transistor, PNP, 100 V, 20 A, 160 W, TO-3, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 2Pins
- Power Dissipation: 160W
- DC Current Gain hFE: 100hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transistor Case Style: TO-3
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 20A
- Collector Emitter Voltage Max: 100V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 5.63 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## 2N6284 (NPN); 2N6286, 2N6287 (PNP) ## **Preferred Device** ## Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. ## **http://onsemi.com** ## **Features** **20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS, 160 WATTS** - High DC Current Gain @ IC = 10 Adc − hFE = 2400 (Typ) − 2N6284 = 4000 (Typ) − 2N6287 - Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors COLLECTOR CASE • Pb−Free Packages are Available* BASE 1 **MAXIMUM RATINGS** (Note 1) **Rating Symbol Value Unit** EMITTER 2 Collector−Emitter Voltage VCEO Vdc 2N6286 80 2N6284/87 100 **MARKING DIAGRAM** Collector−Base Voltage VCB Vdc 2N6286 80 2N6284/87 100 1 2N628xG Emitter−Base Voltage VEB 5.0 Vdc 2 AYYWW Collector Current −Continuous IC 20 Adc **TO−204AA (TO−3)** MEX Peak 40 **CASE 1−07 STYLE 1** Base Current IB 0.5 Adc Total Power Dissipation @ TC = 25 ° C PD 160 W 2N628x = Device Code Derate above 25 ° C 0.915 W/ ° C x = 4, 6 or 7 Operating and Storage TemperatureRange TJ, Tstg −65 to +200 ° C GA = Location Code= Pb−Free Package ~~a~~ YY € = Year **THERMAL CHARACTERISTICS** (Note 1) WW = Work Week **Characteristic Symbol Max Unit** MEX = Country of Orgin Thermal Resistance, Junction−to−Case R JC 1.09 ° C/W **ORDERING INFORMATION** Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the **Device Package Shipping** Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2N6284 TO−3 100 Units/Tray |**Device**|**Package**|**Shipping**| |---|---|---| |2N6284|TO−3|100 Units/Tray| |2N6284G|TO−3<br>(Pb−Free)|100 Units/Tray| |2N6286|TO−3|100 Units/Tray| |2N6286G|TO−3<br>(Pb−Free)|100 Units/Tray| |2N6287|TO−3|100 Units/Tray| |2N6287G|TO−3<br>(Pb−Free)|100 Units/Tray| - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2008 **September, 2008 − Rev. 4** **2N6284/D** ## **2N6284 (NPN); 2N6286, 2N6287 (PNP)** |160|| |---|---| |PD, POWER DISSIPATION (WATTS)<br>60<br>40<br>140<br>20<br>80<br>100<br>120|| |0|| |25<br>50<br>100<br>125<br>200<br>0<br>75<br>150<br>175|| |TC, CASE TEMPERATURE (°C)|| |**Figure 1. Power Derating**|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 0.1 Adc, IB= 0)<br>2N6286<br>2N6284, 2N6287<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>80<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>(VCE= 50 Vdc, IB= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>1.0<br>ÎÎ<br>**ÎÎ**<br>mAdc|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= Rated VCB, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCB, VBE(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>0.5<br>5.0<br>ÎÎ<br>ÎÎ<br>mAdc|| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>2.0<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ|| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>(IC= 20 Adc, VCE= 3.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>750<br>100<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>18,000<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 40 mAdc)<br>(IC= 20 Adc, IB= 200 mAdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>3.0<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 3.0 Vdc)<br>**ÎÎÎÎÎ**<br>VBE(on)<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>2.8<br>**ÎÎ**<br>Vdc|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage<br>(IC= 20 Adc, IB= 200 mAdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>VBE(sat)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>4.0<br>ÎÎ<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Magnitude of Common Emitter Small−Signal Short−Circuit<br>Forward Current Transfer Ratio<br>(IC= 10 Adc, VCE= 3.0 Vdc, f = 1.0 MHz)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>|hfe|<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>4.0<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6284<br>ÎÎÎÎÎ<br>Cob<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>400<br>ÎÎ<br>pF|| |**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>2N6286, 2N6287<br>**ÎÎÎÎÎ**<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>600<br>**ÎÎ**|| |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain<br>(IC= 10 Adc, VCE= 3.0 Vdc, f = 1.0 kHz)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>hfe<br>ÎÎ**Î**<br>ÎÎ**Î**<br>300<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ<br>ÎÎ<br>−<br>2. Indicates JEDEC Registered Data.|| |3. Pulse test: Pulse Width = 300�s, Duty Cycle = 2%|| **http://onsemi.com** **2** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** **==> picture [257 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> VCC<br>RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS - 30 V<br>D1 MUST BE FAST RECOVERY TYPE e.g.,<br>�1N5825 USED ABOVE IB � 100 mA RC<br>�MSD6100 USED BELOW IB � 100 mA SCOPE<br>TUT<br>V2 RB<br>APPROX<br>+ 8.0 V<br>51 D1 � 8.0 k � 50<br>0<br>V1 + 4.0 V<br>APPROX 25 �s FOR td AND tr, D1 IS DISCONNECTED<br>- 12 V AND V2 = 0<br>tr, tf � 10 ns FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES<br>DUTY CYCLE = 1.0%<br>**----- End of picture text -----**<br> **Figure 2. Switching Times Test Circuit** **==> picture [234 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>7.0 ts 2N6284 (NPN)<br>5.0 2N6287 (PNP)<br>3.0<br>2.0<br>tf tr<br>1.0<br>0.7<br>0.5<br>0.3 VCC = 30 Vdc<br>0.2 IC/IB = 250<br>IB1 = IB2<br>TJ = 25°C td @ VBE(off) = 0 V<br>0.1<br>0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20<br>IC, COLLECTOR CURRENT (AMP)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br> **Figure 3. Switching Times** **==> picture [491 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.7 D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1<br>0.1 0.05 R�JC(t) = r(t) R�JC P(pk)<br>0.07 R �JC = 1.09 ° C/W MAX<br>0.02<br>0.05 D CURVES APPLY FOR POWER<br>PULSE TRAIN SHOWN t 1<br>0.03 0.01 READ TIME AT t 1 t 2<br>0.02 SINGLE PULSE T J(pk) - T C = P (pk) R �JC (t) DUTY CYCLE, D = t 1 /t 2<br>0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME OR PULSE WIDTH (ms)<br>r(t), EFFECTIVE TRANSIENT<br>THERMAL RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 4. Thermal Response** **http://onsemi.com** **3** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** ## **ACTIVE−REGION SAFE OPERATING AREA** **==> picture [161 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>0.1 ms<br>20<br>0.5 ms<br>10<br>1.0 ms<br>5.0<br>5.0 ms<br>2.0 dc<br>1.0 TJ = 200°C<br>0.5<br>0.2 SECOND BREAKDOWN LIMITED<br>BONDING WIRE LIMITED<br>0.1 THERMAL LIMITATION @ TC = 25°C<br>�SINGLE PULSE<br>0.05<br>2.0 5.0 10 20 50 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200�C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200�C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 5. 2N6284, 2N6287** **==> picture [239 x 385] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>5000 TJ = 25°C<br>VCE = 3.0 Vdc<br>2000 IC = 10 A<br>1000<br>500<br>200<br>100<br>50<br>2N6284 (NPN)<br>20<br>2N6287 (PNP)<br>10<br>1.0 2.0 5.0 10 20 50 100 200 500 1000<br>f, FREQUENCY (kHz)<br>Figure 6. Small−Signal Current Gain<br>1000<br>TJ = 25°C<br>700<br>500<br>300 C ib<br>Cob<br>200<br>2N6284 (NPN)<br>2N6287 (PNP)<br>100<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>VR, REVERSE VOLTAGE (VOLTS)<br>hFE, SMALL-SIGNAL CURRENT GAIN<br>C, CAPACITANCE (PF)<br>**----- End of picture text -----**<br> **Figure 7. Capacitance** **http://onsemi.com** **4** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** **==> picture [20 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> NPN<br>**----- End of picture text -----**<br> **==> picture [32 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> 2N6284<br>**----- End of picture text -----**<br> **==> picture [33 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> PNP<br>2N6287<br>**----- End of picture text -----**<br> **==> picture [488 x 612] intentionally omitted <==** **----- Start of picture text -----**<br> 20,000 30,000<br>VCE = 3.0 V 20,000 VCE = 3.0 V<br>10,0007000 TJ = 150°C 10,000 TJ = 150°C<br>5000 7000<br>5000<br>3000 25°C<br>2000 25°C 3000<br>2000<br>1000 -�55°C -�55°C<br>700 1000<br>500 700<br>500<br>300<br>200 300<br>0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 8. DC Current Gain<br>3.0 3.0<br>TJ = 25°C TJ = 25°C<br>2.6 IC = 5.0 A 10 A 15 A 2.6 15 A<br>IC = 5.0 A 10 A<br>2.2 2.2<br>1.8 1.8<br>1.4 1.4<br>1.0 1.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 9. Collector Saturation Region<br>3.0 3.0<br>TJ = 25°C TJ = 25°C<br>2.5 2.5<br>2.0 2.0<br>VBE(sat) @ IC/IB = 250<br>1.5 1.5 VBE(sat) @ IC/IB = 250<br>1.0 VBE @ VCE = 3.0 V 1.0 VBE @ VCE = 3.0 V<br>VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250<br>0.5 0.5<br>0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 10. “On” Voltages** **http://onsemi.com** **5** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** **NPN 2N6284** **==> picture [32 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> PNP<br>2N6287<br>**----- End of picture text -----**<br> **==> picture [486 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> +�5.0 +�5.0<br>+�4.0 hFE�@�VCE� ��3.0�V +�4.0 hFE�@�VCE� ��3.0�V<br>*APPLIES FOR IC/IB ≤ *APPLIES FOR IC/IB ≤<br>250 250<br>+�3.0 +�3.0<br>+�2.0 25°C to 150°C +�2.0 25°C to 150°C<br>+�1.0 +�1.0 -�55°C to + 25°C<br>0 -�55°C to + 25°C 0<br>-�1.0 *�VC for VCE(sat) -�1.0 *�VC for VCE(sat)<br>-�2.0 -�2.0<br>25°C to + 150°C 25°C to + 150°C<br>-�3.0 �VB for VBE -�3.0 �VB for VBE<br>-�4.0 -�55°C to + 25°C -�4.0 -�55°C to + 25°C<br>-�5.0 -�5.0<br>0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>C)° C)°<br>V, TEMPERATURE COEFFICIENTS (mV/ V, TEMPERATURE COEFFICIENTS (mV/<br>θ θ<br>**----- End of picture text -----**<br> **Figure 11. Temperature Coefficients** **==> picture [487 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [5] 10 [3]<br>VCE = 30 V V CE = 30 V<br>10 [4] 10 [2]<br>T J = 150°C<br>10 [3] 10 [1]<br>T J = 150°C<br>10 [2] 10 [0] 100°C<br>100 ° C<br>10 [1] 10 [-1]<br>REVERSE FORWARD REVERSE FORWARD<br>10 [0] 10 [-2] 25°C<br>25°C<br>10 [-1] 10 [-3]<br>-�0.6 -�0.4 -�0.2 0 +�0.2 +�0.4 +�0.6 +�0.8 +�1.0 +�1.2 + 1.4 +�0.6 +�0.4 +�0.2 0 -�0.2 -�0.4 -�0.6 -�0.8 -�1.0 -�1.2 -�1.4<br>VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)<br>μ μ<br>, COLLECTOR CURRENT (��A) , COLLECTOR CURRENT (��A)<br>IC IC<br>**----- End of picture text -----**<br> **Figure 12. Collector Cut−Off Region** **==> picture [148 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>NPN<br>2N6284<br>BASE<br>� 8.0 k � 60<br>EMITTER<br>**----- End of picture text -----**<br> **==> picture [145 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> COLLECTOR<br>PNP<br>2N6287<br>BASE<br>� 8.0 k � 60<br>EMITTER<br>**----- End of picture text -----**<br> **Figure 13. Darlington Schematic** **http://onsemi.com** **6** **2N6284 (NPN); 2N6286, 2N6287 (PNP)** ## **PACKAGE DIMENSIONS** **TO−204 (TO−3)** CASE 1−07 ISSUE Z **==> picture [170 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>N<br>C<br>−T− SEATING<br>Jes E PLANE<br>a D 2 PL K<br>0.13 (0.005) M T Q M Y [M]<br>U<br>−Y−<br>V L<br>2 —<br>G B<br>H 1<br>= −Q−<br>0.13 (0.005) M T Y M<br>**----- End of picture text -----**<br> NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. **==> picture [124 x 159] intentionally omitted <==** **----- Start of picture text -----**<br> 3. ALL RULES AND NOTES ASSOCIATED WITH<br>REFERENCED TO-204AA OUTLINE SHALL APPLY.<br>INCHES MILLIMETERS<br>—— DIM MIN MAX MIN MAX<br>A 1.550 REF 39.37 REF<br>B --- 1.050 --- 26.67<br>———— C 0.250 0.335 6.35 8.51<br>D 0.038 0.043 0.97 1.09<br>E 0.055 0.070 1.40 1.77<br>G 0.430 BSC 10.92 BSC<br>H 0.215 BSC 5.46 BSC<br>sone K 0.440 0.480 11.18 12.19<br>L 0.665 BSC 16.89 BSC<br>N --- 0.830 --- 21.08<br>Q 0.151 0.165 3.84 4.19<br>U 1.187 BSC 30.15 BSC<br>V 0.131 0.188 3.33 4.77<br>————<br>STYLE 1:<br>PIN 1. BASE<br>2. EMITTER<br>CASE: COLLECTOR<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5773−3850 Sales Representative **2N6284/D** **http://onsemi.com 7**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 420,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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