Illustrative purposes only
2N6052G
Bipolar (BJT) Single Transistor, PNP, 100 V, 12 A, 150 W, TO-3, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 2Pins
- Power Dissipation: 150W
- DC Current Gain hFE: 100hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transistor Case Style: TO-3
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 12A
- Collector Emitter Voltage Max: 100V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 6.26 € |
| Current stock | 112 |
| Lead time | 7 days |
Datasheet
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