# Bipolar (BJT) Single Transistor, NPN, 100 V, 8 A, 75 W, TO-220, Through Hole

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![Product image](https://novapart.co/image/farnell:1862549/)

**URL**: https://novapart.co/products/2N6045/bipolar-bjt-single-transistor-npn-100-v-8-a-75-w
**SKU**: 2N6045
**Manufacturer**: MULTICOMP PRO
**Category**: Semiconductors - Discretes || Transistors || Bipolar Transistors || Single Bipolar Junction Transistors - BJT
**Price**: €0.6030
**Stock**: 50+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 75W |
| Dc Current Gain Hfe | 20000hFE |
| Transistor Mounting | Through Hole |
| Transistor Polarity | NPN |
| Transistor Case Style | TO-220 |
| Dc Current Gain Hfe Min | 20000hFE |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 8A |
| Collector Emitter Voltage Max | 100V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1862549/)

## **Darlington Transistor** 

## **Features:** 

- High DC Current Gain 

- Collector-Emitter Sustaining Voltage : Vceo(sus) = 100V Min @ 100mA 

- Monolithic Construction with Built-in Base-Emitter Shunt Resistors 

## **Pin** 

1. Base 2. Collector 3. Emitter 

4. Collector 

## **Absolute Maximum Ratings:** 

|**Absolute Maximum Ratings:**||||
|---|---|---|---|
|**Characteristics**<br>~~a~~|**Symbol**<br>~~a~~|**Value**<br>~~a~~|**Unit**<br>~~a~~|
|Collector-Emitter Voltage<br>~~ee~~|Vceo<br>~~ee~~|100<br>~~ee~~|V<br>~~ee~~|
|collector-Base Voltage<br>~~a~~|Vcb<br>~~a~~|100<br>~~a~~|V<br>~~a~~|
|Emitter-Base Voltage<br>~~ee~~|Veb<br>~~ee~~|5<br>~~ee~~|V<br>~~ee~~|
|Collector Current<br>Continuous<br>~~ee~~|Ic<br>~~ee~~|8<br>~~ee~~|A<br>~~ee~~|
|||16<br>~~ee~~<br>~~a~~|A<br>~~ee~~<br>~~a~~|
|Base Current<br>~~ee~~|Ib<br>~~ee~~|120<br>~~ee~~|mA<br>~~ee~~|
|Total Power Dissipation(Tc= +25°C)<br>~~a~~|Pd<br>~~a~~|75<br>~~a~~|W<br>~~a~~|
|Derate above +25°C<br>~~ee~~|~~ee~~|0.6<br>~~ee~~|W/°C<br>~~ee~~|
|Total Power Dissipation(Ta= +25°C)<br>~~en~~|Pd<br>~~en~~|2.2<br>~~en~~|W<br>~~en~~|
|Derate above +25°C<br>~~a~~|~~a~~|0.175<br>~~a~~|W/°C<br>~~a~~|
|OperatingJunction Temperature Range<br>~~ee~~|Tj<br>~~ee~~<br>~~ee~~|-65to +150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
|Storage Temperature Range<br>~~ee~~|Tstg<br>~~ee~~<br>~~ee~~|-65to +150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
|Thermal Resistance, Junction-to-Case<br>~~a~~|RthJC<br>~~ee~~<br>~~a~~<br>~~ee~~|1.67<br>~~ee~~<br>~~a~~|°C/W<br>~~a~~|
|Thermal Resistance, Junction-to-Ambient (Note 1)<br>~~es~~|RthJA<br>~~es~~<br>~~ee~~|57°<br>~~es~~|C/W<br>~~es~~|



## **Note** 

- (1) Ic = 1A, L = 100mH, P.R.F. = 10Hz, Vcc = 20V, Rbe = 100Ω 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

16/09/19 V1.0 

Page <1> 

## **Darlington Transistor** 

## **Electrical Characteristics : (Tc = +25°C unless otherwise specified)** 

|**Parameter**|**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**OFF Characteristics**|||||||
|Collector-Emitter Sustaining Voltage|Vceo(sus)|Ic= 100mA, Ib= 0, (Note 2)|100|-|-|V|
|Collector Cut-off Current|Iceo|Vce= 45V, Ib= 0|-|-|20|uA|
||Icbo|Vcb= 100V, Ie= 0|-|-|0.02|mA|
|Emitter Cut-Off Current|Iebo|Vbe= 5V, Ic= 0|-|-|2||
|**ON Characteristics**(Note 2)|||||||
|DC Current Gain|hfe|Vce= 4V, Ic= 3A|1,000|-|20,000||
|Collector-Emitter Saturation Voltage|Vce(sat)|Ic= 3A, Ib= 12mA|-|-|2|V|
|||Ic= 8A, Ib= 80mA|-|-|4|V|
|Base-Emitter ON Voltage|Vbe(on)|Vce= 4V, Ic= 4A|-|-|2.8|V|
|**Dynamic characteristics**|||||||
|Small-Signal Current Gain||hfe||Vce= 4V, Ic= 3A, f = 1MHz|4|-|-||
|Output Capacitance|Cob|Vcb= 10V, Ie= 0|-|-|200|pF|



## **Note** 

(2) Pulse test: Pulse Width </=300µs, Duty Cycle </=2%. 

**==> picture [82 x 150] intentionally omitted <==**

|**Dim.**|**Min.**||**Max.**||||
|---|---|---|---|---|---|---|
|A|14.42||16.51||||
|B|9.63||10.67||||
|C|3.56||4.83||||
|D|-||0.9||||
|E|1.15||1.4||||
|F|3.75||3.88||||
|G|2.29||2.79||||
|H|2.54||3.43||||
|J|-||0.56||||
|K|12.7||14.73||||
|L|2.8||4.07||||
|M|2.03||2.92||**Part Number Table**||
|N|-||31.24||||
|O|DEF||7||**Description**|**Part Number**|
|Dimensions : Millimetres|||||Transistor, NPN, 8A, 100V, TO220|2N6045|



**Important Notice :** This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. 

Newark.com/multicomp-pro Farnell.com/multicomp-pro Element14.com/multicomp-pro 

16/09/19 V1.0 

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- [Supplier page](https://es.farnell.com/en-ES/multicomp/2n6045/transistor-npn-8a-100v-to220/dp/1862549)
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