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2N6040G.
Bipolar (BJT) Single Transistor, PNP, 60 V, 8 A, 75 W, TO-220, Through Hole
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- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 75W
- DC Current Gain hFE: 1000hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 1000hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 8A
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.522 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 ## Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. ## **Features** - High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc - Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 **www.onsemi.com** **DARLINGTON, 8 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60 − 100 VOLTS, 75 WATTS** - Low Collector−Emitter Saturation Voltage − - VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 - Monolithic Construction with Built−In Base−Emitter Shunt Resistors - Epoxy Meets UL 94 V−0 @ 0.125 in - ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V **TO−220 CASE 221A STYLE 1** - These Devices are Pb−Free and are RoHS Compliant* **MAXIMUM RATINGS** (Note 1) **Rating Symbol Value Unit MARKING DIAGRAM** Collector−Emitter Voltage 2N6040 VCEO 60 Vdc 2N6043 2N6042 100 2N6045 Collector−Base Voltage 2N6040 VCB 60 Vdc 2N6043 2N6042 100 2N604xG 2N6045 AYWW Emitter−Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 8.0 Adc Peak 16 uit Base Current IB 120 mAdc Total Power Dissipation @ TC = 25 ° C PD 75 W 2N604x = Device Code Derate above 25 ° C 0.60 W/ ° C x = 0, 2, 3, or 5 Operating and Storage Junction TJ, Tstg –65 to +150 ° C AY = Assembly Location= Year Temperature Range WW = Work Week ~~=n~~ Kel Stresses exceeding those listed in the Maximum Ratings table may damage the G = Pb−Free Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 10** **2N6040/D** **PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎÎ**<br>�JC<br>**ÎÎÎÎÎ**<br>1.67<br>**ÎÎÎ**<br>°C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Ambient<br>ÎÎÎ**Î**<br>�JA<br>ÎÎÎÎÎ<br>57<br>ÎÎÎ<br>°C/W<br>***ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)<br>2N6040, 2N6043<br>2N6042, 2N6045<br>VCEO(sus)<br>60<br>100<br>−<br>−<br>Vdc<br>Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, IB= 0)<br>2N6042, 2N6045<br>ICEO<br>−<br>−<br>20<br>20<br>�A<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>2N6042, 2N6045<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6040, 2N6043<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6041, 2N6044<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6042, 2N6045<br>ICEX<br>−<br>−<br>−<br>−<br>−<br>20<br>20<br>200<br>200<br>200<br>�A<br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N6040, 2N6043<br>(VCB= 100 Vdc, IE= 0)<br>2N6042, 2N6045<br>ICBO<br>−<br>−<br>20<br>20<br>�A<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>2.0<br>mAdc<br>**ON CHARACTERISTICS**<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, VCE= 4.0 Vdc)<br>All Types<br>hFE<br>1000<br>1000<br>100<br>20.000<br>20,000<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 16 mAdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, IB= 12 mAdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, IB= 80 Adc)<br>All Types<br>VCE(sat)<br>−<br>−<br>−<br>2.0<br>2.0<br>4.0<br>Vdc<br>Base−Emitter Saturation Voltage (IC= 8.0 Adc, IB= 80 mAdc)<br>VBE(sat)<br>−<br>4.5<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>2.8<br>Vdc<br>**DYNAMIC CHARACTERISTICS**<br>Small Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)<br>|hfe|<br>4.0<br>−<br>Output Capacitance<br>2N6040/2N6042<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6043/2N6045<br>Cob<br>−<br>−<br>300<br>200<br>pF<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>hfe<br>300<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎÎ**<br>�JC<br>**ÎÎÎÎÎ**<br>1.67<br>**ÎÎÎ**<br>°C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Ambient<br>ÎÎÎ**Î**<br>�JA<br>ÎÎÎÎÎ<br>57<br>ÎÎÎ<br>°C/W<br>***ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)<br>2N6040, 2N6043<br>2N6042, 2N6045<br>VCEO(sus)<br>60<br>100<br>−<br>−<br>Vdc<br>Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, IB= 0)<br>2N6042, 2N6045<br>ICEO<br>−<br>−<br>20<br>20<br>�A<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>2N6042, 2N6045<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6040, 2N6043<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6041, 2N6044<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6042, 2N6045<br>ICEX<br>−<br>−<br>−<br>−<br>−<br>20<br>20<br>200<br>200<br>200<br>�A<br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N6040, 2N6043<br>(VCB= 100 Vdc, IE= 0)<br>2N6042, 2N6045<br>ICBO<br>−<br>−<br>20<br>20<br>�A<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>2.0<br>mAdc<br>**ON CHARACTERISTICS**<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, VCE= 4.0 Vdc)<br>All Types<br>hFE<br>1000<br>1000<br>100<br>20.000<br>20,000<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 16 mAdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, IB= 12 mAdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, IB= 80 Adc)<br>All Types<br>VCE(sat)<br>−<br>−<br>−<br>2.0<br>2.0<br>4.0<br>Vdc<br>Base−Emitter Saturation Voltage (IC= 8.0 Adc, IB= 80 mAdc)<br>VBE(sat)<br>−<br>4.5<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>2.8<br>Vdc<br>**DYNAMIC CHARACTERISTICS**<br>Small Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)<br>|hfe|<br>4.0<br>−<br>Output Capacitance<br>2N6040/2N6042<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6043/2N6045<br>Cob<br>−<br>−<br>300<br>200<br>pF<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>hfe<br>300<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎÎ**<br>�JC<br>**ÎÎÎÎÎ**<br>1.67<br>**ÎÎÎ**<br>°C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Ambient<br>ÎÎÎ**Î**<br>�JA<br>ÎÎÎÎÎ<br>57<br>ÎÎÎ<br>°C/W<br>***ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)<br>2N6040, 2N6043<br>2N6042, 2N6045<br>VCEO(sus)<br>60<br>100<br>−<br>−<br>Vdc<br>Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, IB= 0)<br>2N6042, 2N6045<br>ICEO<br>−<br>−<br>20<br>20<br>�A<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>2N6042, 2N6045<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6040, 2N6043<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6041, 2N6044<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6042, 2N6045<br>ICEX<br>−<br>−<br>−<br>−<br>−<br>20<br>20<br>200<br>200<br>200<br>�A<br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N6040, 2N6043<br>(VCB= 100 Vdc, IE= 0)<br>2N6042, 2N6045<br>ICBO<br>−<br>−<br>20<br>20<br>�A<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>2.0<br>mAdc<br>**ON CHARACTERISTICS**<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, VCE= 4.0 Vdc)<br>All Types<br>hFE<br>1000<br>1000<br>100<br>20.000<br>20,000<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 16 mAdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, IB= 12 mAdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, IB= 80 Adc)<br>All Types<br>VCE(sat)<br>−<br>−<br>−<br>2.0<br>2.0<br>4.0<br>Vdc<br>Base−Emitter Saturation Voltage (IC= 8.0 Adc, IB= 80 mAdc)<br>VBE(sat)<br>−<br>4.5<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>2.8<br>Vdc<br>**DYNAMIC CHARACTERISTICS**<br>Small Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)<br>|hfe|<br>4.0<br>−<br>Output Capacitance<br>2N6040/2N6042<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6043/2N6045<br>Cob<br>−<br>−<br>300<br>200<br>pF<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>hfe<br>300<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎÎ**<br>�JC<br>**ÎÎÎÎÎ**<br>1.67<br>**ÎÎÎ**<br>°C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Ambient<br>ÎÎÎ**Î**<br>�JA<br>ÎÎÎÎÎ<br>57<br>ÎÎÎ<br>°C/W<br>***ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)<br>2N6040, 2N6043<br>2N6042, 2N6045<br>VCEO(sus)<br>60<br>100<br>−<br>−<br>Vdc<br>Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, IB= 0)<br>2N6042, 2N6045<br>ICEO<br>−<br>−<br>20<br>20<br>�A<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>2N6042, 2N6045<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6040, 2N6043<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6041, 2N6044<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6042, 2N6045<br>ICEX<br>−<br>−<br>−<br>−<br>−<br>20<br>20<br>200<br>200<br>200<br>�A<br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N6040, 2N6043<br>(VCB= 100 Vdc, IE= 0)<br>2N6042, 2N6045<br>ICBO<br>−<br>−<br>20<br>20<br>�A<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>2.0<br>mAdc<br>**ON CHARACTERISTICS**<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, VCE= 4.0 Vdc)<br>All Types<br>hFE<br>1000<br>1000<br>100<br>20.000<br>20,000<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 16 mAdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, IB= 12 mAdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, IB= 80 Adc)<br>All Types<br>VCE(sat)<br>−<br>−<br>−<br>2.0<br>2.0<br>4.0<br>Vdc<br>Base−Emitter Saturation Voltage (IC= 8.0 Adc, IB= 80 mAdc)<br>VBE(sat)<br>−<br>4.5<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>2.8<br>Vdc<br>**DYNAMIC CHARACTERISTICS**<br>Small Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)<br>|hfe|<br>4.0<br>−<br>Output Capacitance<br>2N6040/2N6042<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6043/2N6045<br>Cob<br>−<br>−<br>300<br>200<br>pF<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>hfe<br>300<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎÎ**<br>�JC<br>**ÎÎÎÎÎ**<br>1.67<br>**ÎÎÎ**<br>°C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Ambient<br>ÎÎÎ**Î**<br>�JA<br>ÎÎÎÎÎ<br>57<br>ÎÎÎ<br>°C/W<br>***ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)<br>2N6040, 2N6043<br>2N6042, 2N6045<br>VCEO(sus)<br>60<br>100<br>−<br>−<br>Vdc<br>Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, IB= 0)<br>2N6042, 2N6045<br>ICEO<br>−<br>−<br>20<br>20<br>�A<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>2N6042, 2N6045<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6040, 2N6043<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6041, 2N6044<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6042, 2N6045<br>ICEX<br>−<br>−<br>−<br>−<br>−<br>20<br>20<br>200<br>200<br>200<br>�A<br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N6040, 2N6043<br>(VCB= 100 Vdc, IE= 0)<br>2N6042, 2N6045<br>ICBO<br>−<br>−<br>20<br>20<br>�A<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>2.0<br>mAdc<br>**ON CHARACTERISTICS**<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, VCE= 4.0 Vdc)<br>All Types<br>hFE<br>1000<br>1000<br>100<br>20.000<br>20,000<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 16 mAdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, IB= 12 mAdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, IB= 80 Adc)<br>All Types<br>VCE(sat)<br>−<br>−<br>−<br>2.0<br>2.0<br>4.0<br>Vdc<br>Base−Emitter Saturation Voltage (IC= 8.0 Adc, IB= 80 mAdc)<br>VBE(sat)<br>−<br>4.5<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>2.8<br>Vdc<br>**DYNAMIC CHARACTERISTICS**<br>Small Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)<br>|hfe|<br>4.0<br>−<br>Output Capacitance<br>2N6040/2N6042<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6043/2N6045<br>Cob<br>−<br>−<br>300<br>200<br>pF<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>hfe<br>300<br>−<br>−|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎ<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>**Symbol**<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>**Max**<br>ÎÎÎ<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎÎ**<br>�JC<br>**ÎÎÎÎÎ**<br>1.67<br>**ÎÎÎ**<br>°C/W<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Ambient<br>ÎÎÎ**Î**<br>�JA<br>ÎÎÎÎÎ<br>57<br>ÎÎÎ<br>°C/W<br>***ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)<br>**Characteristic**<br>**Symbol**<br>**Min**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)<br>2N6040, 2N6043<br>2N6042, 2N6045<br>VCEO(sus)<br>60<br>100<br>−<br>−<br>Vdc<br>Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, IB= 0)<br>2N6042, 2N6045<br>ICEO<br>−<br>−<br>20<br>20<br>�A<br>Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>2N6042, 2N6045<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6040, 2N6043<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6041, 2N6044<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6042, 2N6045<br>ICEX<br>−<br>−<br>−<br>−<br>−<br>20<br>20<br>200<br>200<br>200<br>�A<br>Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N6040, 2N6043<br>(VCB= 100 Vdc, IE= 0)<br>2N6042, 2N6045<br>ICBO<br>−<br>−<br>20<br>20<br>�A<br>Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)<br>IEBO<br>−<br>2.0<br>mAdc<br>**ON CHARACTERISTICS**<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, VCE= 4.0 Vdc)<br>All Types<br>hFE<br>1000<br>1000<br>100<br>20.000<br>20,000<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 16 mAdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, IB= 12 mAdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, IB= 80 Adc)<br>All Types<br>VCE(sat)<br>−<br>−<br>−<br>2.0<br>2.0<br>4.0<br>Vdc<br>Base−Emitter Saturation Voltage (IC= 8.0 Adc, IB= 80 mAdc)<br>VBE(sat)<br>−<br>4.5<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>2.8<br>Vdc<br>**DYNAMIC CHARACTERISTICS**<br>Small Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)<br>|hfe|<br>4.0<br>−<br>Output Capacitance<br>2N6040/2N6042<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6043/2N6045<br>Cob<br>−<br>−<br>300<br>200<br>pF<br>Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>hfe<br>300<br>−<br>−| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br><br>|**Î**<br><br>**ÎÎÎÎ**<br>**Symbol**|**ÎÎÎÎ**<br>**Max**<br><br>||**ÎÎ**<br>**Unit**| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>|**Î**<br>**ÎÎÎÎ**<br>�JC|**ÎÎÎÎ**<br>1.67<br>||**ÎÎ**<br>°C/W| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Thermal Resistance, Junction−to−Ambient<br>|Î<br>ÎÎÎ**Î**<br>�JA|ÎÎÎÎ<br>57<br>||ÎÎ<br>°C/W| ||***ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||| ||**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| ||**OFF CHARACTERISTICS**||||| ||Collector−Emitter Sustaining Voltage<br>(IC= 100 mAdc, IB= 0)<br>2N6040, 2N6043<br>2N6042, 2N6045|VCEO(sus)|60<br>100|−<br>−|Vdc| ||Collector Cutoff Current<br>(VCE= 60 Vdc, IB= 0)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, IB= 0)<br>2N6042, 2N6045|ICEO|−<br>−|20<br>20|�A| ||Collector Cutoff Current<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc)<br>2N6040, 2N6043<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>2N6042, 2N6045<br>(VCE= 60 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6040, 2N6043<br>(VCE= 80 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6041, 2N6044<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>2N6042, 2N6045|ICEX|−<br>−<br>−<br>−<br>−|20<br>20<br>200<br>200<br>200|�A| ||Collector Cutoff Current<br>(VCB= 60 Vdc, IE= 0)<br>2N6040, 2N6043<br>(VCB= 100 Vdc, IE= 0)<br>2N6042, 2N6045|ICBO|−<br>−|20<br>20|�A| ||Emitter Cutoff Current (VBE= 5.0 Vdc, IC= 0)|IEBO|−|2.0|mAdc| ||**ON CHARACTERISTICS**||||| ||DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, VCE= 4.0 Vdc)<br>All Types|hFE|1000<br>1000<br>100|20.000<br>20,000<br>−|−| ||Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 16 mAdc)<br>2N6040, 2N6043,<br>(IC= 3.0 Adc, IB= 12 mAdc)<br>2N6042, 2N6045<br>(IC= 8.0 Adc, IB= 80 Adc)<br>All Types|VCE(sat)|−<br>−<br>−|2.0<br>2.0<br>4.0|Vdc| ||Base−Emitter Saturation Voltage (IC= 8.0 Adc, IB= 80 mAdc)|VBE(sat)|−|4.5|Vdc| ||Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)|VBE(on)|−|2.8|Vdc| ||**DYNAMIC CHARACTERISTICS**||||| ||Small Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)||hfe||4.0|−|| ||Output Capacitance<br>2N6040/2N6042<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N6043/2N6045|Cob|−<br>−|300<br>200|pF| ||Small−Signal Current Gain (IC= 3.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)|hfe|300|−|−| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data. **http://onsemi.com** **2** **PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045** **==> picture [494 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> TA TC<br>4.0 80<br>3.0 60<br>TC<br>2.0 40<br>TA<br>1.0 20<br>0 0<br>0 20 40 60 80 100 120 140 160<br>T, TEMPERATURE (°C)<br>Figure 1. Power Derating<br>5.0<br>3.0 ts<br>RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS -�30 VVCC 2.0<br>D1 MUST BE FAST RECOVERY TYPE, eg:<br>�1N5825 USED ABOVE IB ≈ 100 mA RC 1.0 tf<br>�MSD6100 USED BELOW IB ≈ 100 mA TUT SCOPE 0.7<br>V2 RB 0.5<br>approx<br>+�8.0 V 0.3<br>0 51 D1 ≈ 8.0 k ≈�120 0.2 IVCCC/IB = 30 V = 250 tr<br>approxV1 +�4.0 V 0.1 ITB1J = 25 = IB2°C<br>-12 V 25 �s for td and tr, D1 is disconnected 0.07 PNPNPN td @ VBE(off) = 0 V<br>tr, tf ≤ 10 ns For NPN test circuit reverse all polarities and D1.and V2 = 0 0.050.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>DUTY CYCLE = 1.0%<br>IC, COLLECTOR CURRENT (AMP)<br>Figure 2. Switching Times Equivalent Circuit Figure 3. Switching Times<br>1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1 �JC(t) = r(t) �JC P (pk)<br>0.1 � JC = 1.67°C/W<br>0.05 D CURVES APPLY FOR POWER<br>0.07<br>0.05 0.02 PULSE TRAIN SHOWN t 1<br>READ TIME AT t 1 t2<br>0.03 SINGLE PULSE 0.01 TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t 1 /t 2<br>0.02<br>0.01<br>0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME OR PULSE WIDTH (ms)<br>Figure 4. Thermal Response<br>PD, POWER DISSIPATION (WATTS)<br>μ<br>t, TIME (��s)<br>r(t), EFFECTIVE TRANSIENT<br>THERMAL RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **http://onsemi.com** **3** **PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045** **==> picture [490 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> 20 100 �s There are two limitations on the power handling ability of<br>10 a transistor: average junction temperature and second<br>5.0 breakdown. Safe operating area curves indicate IC − VC − V − VCE<br>500 �s limits of the transistor that must be observed for reliable<br>1.0�ms<br>2.0 TJ = 150°C 5.0�ms dc operation; i.e., the transistor must not be subjected to greater<br>1.0 BONDING WIRE LIMITED dissipation than the curves indicate.<br>0.5 THERMALLY LIMITED @ TC = 25°C The data of Figure 5 is based on TJ(pk) = 150°C; TCJ(pk) = 150°C; TC = 150°C; TC°C; TCC; TCC is<br>(SINGLE PULSE) variable depending on conditions. Second breakdown pulse<br>0.2 SECOND BREAKDOWN LIMITED limits are valid for duty cycles to 10% provided TJ(pk)J(pk)<br>0.1 CURVES APPLY BELOW RATED VCEO < 150°C. TJ(pk) may be calculated from the data in Figure 4.°C. TJ(pk) may be calculated from the data in Figure 4.C. TJ(pk) may be calculated from the data in Figure 4.J(pk) may be calculated from the data in Figure 4. may be calculated from the data in Figure 4.<br>2N6040, 2N6043<br>0.05 2N6045 At high case temperatures, thermal limitations will reduce<br>the power that can be handled to values less than the<br>0.021.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 limitations imposed by second breakdown.<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>Figure 5. Active−Region Safe Operating Area<br>10,000 300<br>5000 TJ = 25°C<br>3000 200<br>2000<br>1000<br>500 TC = 25°C Cob<br>100<br>300 VCE = 4.0 Vdc<br>200100 IC = 3.0 Adc 70 Cib<br>50<br>PNP 50<br>30 NPN PNP<br>20<br>NPN<br>100<br>10 30<br>1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50<br>f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 6. Small−Signal Current Gain Figure 7. Capacitance<br>PNP NPN<br>2N6040, 2N6042 2N6043, 2N6045<br>20,000 20,000<br>VCE = 4.0 V VCE = 4.0 V<br>10,000 10,000<br>7000 7000<br>5000 TJ = 150°C 5000 TJ = 150°C<br>3000 3000<br>2000 25°C 2000<br>25°C<br>1000 1000<br>700 700<br>500 -�55°C 500 -�55°C<br>300 300<br>200 200<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>IC, COLLECTOR CURRENT (AMP)<br>C, CAPACITANCE (pF)<br>hfe, SMALL-SIGNAL CURRENT GAIN<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VC − V − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150°C; TCJ(pk) = 150°C; TC = 150°C; TC°C; TCC; TCC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)J(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 4.°C. TJ(pk) may be calculated from the data in Figure 4.C. TJ(pk) may be calculated from the data in Figure 4.J(pk) may be calculated from the data in Figure 4. may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 8. DC Current Gain** **http://onsemi.com** **4** **PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045** **==> picture [491 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 3.0<br>TJ = 25°C TJ = 25°C<br>2.6 2.6<br>IC = 2.0 A 4.0 A 6.0 A IC = 2.0 A 4.0 A 6.0 A<br>2.2 2.2<br>1.8 1.8<br>1.4 1.4<br>1.0 1.0<br>0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30<br>IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 9. Collector Saturation Region<br>3.0 3.0<br>TJ = 25°C TJ = 25°C<br>2.5 2.5<br>2.0 2.0<br>1.5 VBE @ VCE = 4.0 V 1.5 VBE(sat) @ IC/IB = 250<br>VBE(sat) @ IC/IB = 250 VBE @ VCE = 4.0 V<br>1.0 1.0<br>VCE(sat) @ IC/IB = 250<br>VCE(sat) @ IC/IB = 250<br>0.5 0.5<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.010 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 10. “On” Voltages** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**| |2N6040G|TO−220<br>(Pb−Free)|50 Units / Rail| |2N6042G|TO−220<br>(Pb−Free)|50 Units / Rail| |2N6043G|TO−220<br>(Pb−Free)|50 Units / Rail| |2N6045G|TO−220<br>(Pb−Free)|50 Units / Rail| **http://onsemi.com** **5** **PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045** ## **PACKAGE DIMENSIONS** **TO−220** CASE 221A−09 ISSUE AH **==> picture [233 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>THe V J |<br>G<br>D<br>;<br>N<br>**----- End of picture text -----**<br> - NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. |**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---| ||**MIN**<br>**INCHES**|**MAX**<br>**INCHES**|**MIN**<br>**MILLIMETERS**|**MAX**<br>**MILLIMETERS**| |**DIM**<br>**A**|**MIN**<br>0.570|**MAX**<br>0.620|**MIN**<br>14.48|**MAX**<br>15.75| |**B**|0.380|0.415|9.66|10.53| |**B**<br>**C**|0.380<br>0.160|0.415<br>0.190|9.66<br>4.07|10.53<br>4.83| |**D**|0.025|0.038|0.64|0.96| |**F**|0.142|0.161|3.61|4.09| |**G**|0.095|0.105|2.42|2.66| |**H**|0.110|0.161|2.80|4.10| |**J**|0.014|0.024|0.36|0.61| |**K**|0.500|0.562|12.70|14.27| |**L**|0.045|0.060|1.15|1.52| |**N**|0.190|0.210|4.83|5.33| |**Q**|0.100|0.120|2.54|3.04| |**Q**<br>**R**<br>SSEEe|0.100<br>0.080<br>SSEEe|0.120<br>0.110<br>SSEEe|2.54<br>2.04<br>SSEEe|3.04<br>2.79<br>SSEEe| |**S**<br>SSEEe|0.045<br>SSEEe|0.055<br>SSEEe|1.15<br>SSEEe|1.39<br>SSEEe| |**S**<br>**T**<br>SSEEe|0.045<br>0.235<br>SSEEe|0.055<br>0.255<br>SSEEe|1.15<br>5.97<br>SSEEe|1.39<br>6.47<br>SSEEe| |**U**<br>SSEEe|0.000<br>SSEEe|0.050<br>SSEEe|0.00<br>SSEEe|1.27<br>SSEEe| |**V**<br>SSEEe|0.045<br>SSEEe|---<br>SSEEe|1.15<br>SSEEe|---<br>SSEEe| |**Z**<br>SSEEe|---<br>SSEEe|0.080<br>SSEEe|---<br>SSEEe|2.04<br>SSEEe| ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **2N6040/D** **6**
Updated at February 9, 2023
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