2N5886G

Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 25 A, 200 W, TO-204AA, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC Collector Current:25A; DC Current Gain hFE:4hFE; Transistor Case Style:T
No. of Pins: 2Pins
Product Range: 2NXXXX
Power Dissipation: 200W
Transition Frequency: 4MHz
DC Current Gain hFE Min: 4hFE
Operating Temperature Max: 200°C
Continuous Collector Current: 25A
Collector Emitter Voltage Max: 80V

Delivery and price
Units per pack	50
Price	4.79 €
Current stock	50+
Lead time	7 days

Datasheet

Updated at March 14, 2026