2N5883G

Bipolar (BJT) Single Transistor, PNP, 60 V, 25 A, 200 W, TO-204, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC Collector Current:-25A; DC Current Gain hFE:4hFE; Trans
No. of Pins: 2Pins
Product Range: 2NXXXX
Qualification: -
Power Dissipation: 200W
Transistor Mounting: Through Hole
Transistor Polarity: PNP
Transition Frequency: 4MHz
Transistor Case Style: TO-204
DC Current Gain hFE Min: 4hFE
Operating Temperature Max: 200°C
Continuous Collector Current: 25A
Collector Emitter Voltage Max: 60V

Delivery and price
Units per pack	100
Price	4.26 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026