2N5686G

Bipolar (BJT) Single Transistor, NPN, 80 V, 50 A, 300 W, TO-204AA, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:2MHz; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:15hFE; Transistor
MSL: -
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 2Pins
Product Range: -
Qualification: -
Power Dissipation: 300W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 2MHz
Transistor Case Style: TO-204AA
DC Current Gain hFE Min: 15hFE
Operating Temperature Max: 200°C
Continuous Collector Current: 50A
Collector Emitter Voltage Max: 80V

Delivery and price
Units per pack	250
Price	10.68 €
Current stock	100+
Lead time	7 days

Datasheet

Updated at March 14, 2026