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2N5686G
Bipolar (BJT) Single Transistor, NPN, 80 V, 50 A, 300 W, TO-204AA, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:2MHz; Power Dissipation Pd:300W; DC Collector Current:50A; DC Current Gain hFE:15hFE; Transistor
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 300W
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 2MHz
- Transistor Case Style: TO-204AA
- DC Current Gain hFE Min: 15hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 10.68 € |
| Current stock | 100+ |
| Lead time | 7 days |
Datasheet
## 2N5684 (PNP), 2N5686 (NPN) ## High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. ## **Features** - High Current Capability - I C[ Continuous = 50 Amperes] - • DC Current Gain-h FE =15-60@I C[ = 25 Adc] - - CE(sat)[ = 1.0 Vdc (Max) @ I] C[ = 25 Adc] ## **http://onsemi.com** ## **50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-80 VOLTS, 300 WATTS** - ## **MAXIMUM RATINGS** (Note 1) |**MAXIMUM RATINGS**(Note 1)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector-Emitter Voltage<br>~~ee~~|VCEO|80<br>~~ee~~|Vdc<br>~~ee~~| |Collector-Base Voltage<br>~~ee~~<br>~~ee~~|VCB|80<br>~~ee~~|Vdc<br>~~ee~~| |Emitter-Base Voltage<br>~~ee~~<br>~~ee~~|VEB|5.0<br>~~ee~~|Vdc<br>~~ee~~| |Collector Current - Continuous<br>~~ee~~<br>~~ee~~|IC|50|Adc| |Base Current<br>~~ee~~<br>~~ee~~|IB<br>~~ee~~|15<br>~~ee~~|Adc<br>~~ee~~| |Total Power Dissipation @ TC= 25°C<br>Derate above 25°C<br>~~ee~~<br>~~ee~~|PD<br>~~ee~~|300<br>1.715<br>~~ee~~<br>~~id~~|mW<br>mW/°C<br>~~ee~~| |Operating and Storage Temperature<br>Range<br>~~ee ~~<br>~~ee~~|TJ, Tstg<br> ~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~id~~|°C<br>~~ee~~<br>~~ee~~| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. **==> picture [238 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 300 PIN , | ft ft tt<br>250<br>| | Af ft ft ft ft tt<br>Pot | KT tT ft ft<br>200 PF | | TN et<br>| | | | IXQQV |] ft ft<br>150<br>ee Nee<br>Pot | EP EN<br>100 ee Nee<br>50 rea NN e e<br>|EN<br>Pot ee<br>ee<br>0 ee eN<br>0 20 40 60 80 100 120 140 160 180 200<br>TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **==> picture [106 x 66] intentionally omitted <==** **----- Start of picture text -----**<br> 2N568xG<br>AYYWW<br>MEX<br>TO-204 (TO-3)<br>CASE 197A<br>STYLE 1<br>:<br>**----- End of picture text -----**<br> **==> picture [113 x 68] intentionally omitted <==** **----- Start of picture text -----**<br> 2N568x = Device Code<br>x = 4 or 6<br>G = Pb-Free Package<br>A = Location Code<br>YY = Year<br>WW = Work Week<br>MEX = Country of Orgin<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |2N5684G|TO-3<br>(Pb-Free)|100 Units/Tray| |2N5686|TO-3|100 Units/Tray| |2N5686G|TO-3<br>(Pb-Free)|100 Units/Tray| *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Figure 1. Power Derating** Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. Publication Order Number: **2N5684/D** **1** © **October, 2007 - Rev. 12** ## **2N5684 (PNP), 2N5686 (NPN)** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎ**<br>**Min**<br>**ÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Sustaining Voltage (Note 3)<br>(IC= 0.2 Adc, IB= 0)<br>**ÎÎÎÎ**<br>VCEO(sus)<br>**ÎÎ**<br>80<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>**ÎÎÎÎ**<br>ICEO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc)<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>10<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)<br>**ÎÎÎÎ**<br>ICBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>**ÎÎÎÎ**<br>IEBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>(IC= 50 Adc, VCE= 5.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>Î**Î**<br>**ÎÎ**<br>15<br>5.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>-<br>ÎÎ<br>**ÎÎ**<br>-<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>(IC= 50 Adc, IB= 10 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter Saturation Voltage (Note 2)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>**ÎÎÎÎ**<br>VBE(sat)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter On Voltage (Note 2)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>**ÎÎÎÎ**<br>VBE(on)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current-Gain - Bandwidth Product<br>(IC= 5.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎÎ**<br>fT<br>**ÎÎ**<br>2.0<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5684<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N5686<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cob<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2000<br>1200<br>ÎÎ<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small-Signal Current Gain<br>(IC= 10 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>hfe<br>Î**Î**<br>15<br>ÎÎ**Î**<br>-<br>ÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎ**<br>**Min**<br>**ÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Sustaining Voltage (Note 3)<br>(IC= 0.2 Adc, IB= 0)<br>**ÎÎÎÎ**<br>VCEO(sus)<br>**ÎÎ**<br>80<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>**ÎÎÎÎ**<br>ICEO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc)<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>10<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)<br>**ÎÎÎÎ**<br>ICBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>**ÎÎÎÎ**<br>IEBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>(IC= 50 Adc, VCE= 5.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>Î**Î**<br>**ÎÎ**<br>15<br>5.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>-<br>ÎÎ<br>**ÎÎ**<br>-<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>(IC= 50 Adc, IB= 10 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter Saturation Voltage (Note 2)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>**ÎÎÎÎ**<br>VBE(sat)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter On Voltage (Note 2)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>**ÎÎÎÎ**<br>VBE(on)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current-Gain - Bandwidth Product<br>(IC= 5.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎÎ**<br>fT<br>**ÎÎ**<br>2.0<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5684<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N5686<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cob<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2000<br>1200<br>ÎÎ<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small-Signal Current Gain<br>(IC= 10 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>hfe<br>Î**Î**<br>15<br>ÎÎ**Î**<br>-<br>ÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎ**<br>**Min**<br>**ÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Sustaining Voltage (Note 3)<br>(IC= 0.2 Adc, IB= 0)<br>**ÎÎÎÎ**<br>VCEO(sus)<br>**ÎÎ**<br>80<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>**ÎÎÎÎ**<br>ICEO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc)<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>10<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)<br>**ÎÎÎÎ**<br>ICBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>**ÎÎÎÎ**<br>IEBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>(IC= 50 Adc, VCE= 5.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>Î**Î**<br>**ÎÎ**<br>15<br>5.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>-<br>ÎÎ<br>**ÎÎ**<br>-<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>(IC= 50 Adc, IB= 10 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter Saturation Voltage (Note 2)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>**ÎÎÎÎ**<br>VBE(sat)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter On Voltage (Note 2)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>**ÎÎÎÎ**<br>VBE(on)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current-Gain - Bandwidth Product<br>(IC= 5.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎÎ**<br>fT<br>**ÎÎ**<br>2.0<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5684<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N5686<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cob<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2000<br>1200<br>ÎÎ<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small-Signal Current Gain<br>(IC= 10 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>hfe<br>Î**Î**<br>15<br>ÎÎ**Î**<br>-<br>ÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎ**<br>**Min**<br>**ÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Sustaining Voltage (Note 3)<br>(IC= 0.2 Adc, IB= 0)<br>**ÎÎÎÎ**<br>VCEO(sus)<br>**ÎÎ**<br>80<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>**ÎÎÎÎ**<br>ICEO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc)<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>10<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)<br>**ÎÎÎÎ**<br>ICBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>**ÎÎÎÎ**<br>IEBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>(IC= 50 Adc, VCE= 5.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>Î**Î**<br>**ÎÎ**<br>15<br>5.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>-<br>ÎÎ<br>**ÎÎ**<br>-<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>(IC= 50 Adc, IB= 10 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter Saturation Voltage (Note 2)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>**ÎÎÎÎ**<br>VBE(sat)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter On Voltage (Note 2)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>**ÎÎÎÎ**<br>VBE(on)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current-Gain - Bandwidth Product<br>(IC= 5.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎÎ**<br>fT<br>**ÎÎ**<br>2.0<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5684<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N5686<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cob<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2000<br>1200<br>ÎÎ<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small-Signal Current Gain<br>(IC= 10 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>hfe<br>Î**Î**<br>15<br>ÎÎ**Î**<br>-<br>ÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎ**<br>**Min**<br>**ÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Sustaining Voltage (Note 3)<br>(IC= 0.2 Adc, IB= 0)<br>**ÎÎÎÎ**<br>VCEO(sus)<br>**ÎÎ**<br>80<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>**ÎÎÎÎ**<br>ICEO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc)<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>10<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)<br>**ÎÎÎÎ**<br>ICBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>**ÎÎÎÎ**<br>IEBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>(IC= 50 Adc, VCE= 5.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>Î**Î**<br>**ÎÎ**<br>15<br>5.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>-<br>ÎÎ<br>**ÎÎ**<br>-<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>(IC= 50 Adc, IB= 10 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter Saturation Voltage (Note 2)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>**ÎÎÎÎ**<br>VBE(sat)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter On Voltage (Note 2)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>**ÎÎÎÎ**<br>VBE(on)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current-Gain - Bandwidth Product<br>(IC= 5.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎÎ**<br>fT<br>**ÎÎ**<br>2.0<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5684<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N5686<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cob<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2000<br>1200<br>ÎÎ<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small-Signal Current Gain<br>(IC= 10 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>hfe<br>Î**Î**<br>15<br>ÎÎ**Î**<br>-<br>ÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted) (Note 2)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎ**<br>**Min**<br>**ÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Sustaining Voltage (Note 3)<br>(IC= 0.2 Adc, IB= 0)<br>**ÎÎÎÎ**<br>VCEO(sus)<br>**ÎÎ**<br>80<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)<br>**ÎÎÎÎ**<br>ICEO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>1.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc)<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.0<br>10<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)<br>**ÎÎÎÎ**<br>ICBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>**ÎÎÎÎ**<br>IEBO<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>(IC= 50 Adc, VCE= 5.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>Î**Î**<br>**ÎÎ**<br>15<br>5.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>60<br>-<br>ÎÎ<br>**ÎÎ**<br>-<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>(IC= 50 Adc, IB= 10 Adc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCE(sat)<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter Saturation Voltage (Note 2)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>**ÎÎÎÎ**<br>VBE(sat)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter On Voltage (Note 2)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>**ÎÎÎÎ**<br>VBE(on)<br>**ÎÎ**<br>-<br>**ÎÎÎ**<br>2.0<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current-Gain - Bandwidth Product<br>(IC= 5.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎÎ**<br>fT<br>**ÎÎ**<br>2.0<br>**ÎÎÎ**<br>-<br>**ÎÎ**<br>MHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance<br>2N5684<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N5686<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>Cob<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2000<br>1200<br>ÎÎ<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small-Signal Current Gain<br>(IC= 10 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>hfe<br>Î**Î**<br>15<br>ÎÎ**Î**<br>-<br>ÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**|**ÎÎÎ**<br>**Symbol**|**Î**<br>**Î**<br>**Min**|**ÎÎ**<br>**Max**|**Î**<br>**Unit**| ||**OFF CHARACTERISTICS**||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Collector-Emitter Sustaining Voltage (Note 3)<br>(IC= 0.2 Adc, IB= 0)|**ÎÎÎ**<br><br><br>VCEO(sus)|**Î**<br><br><br>80|**ÎÎ**<br><br><br>-|**Î**<br><br><br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Collector Cutoff Current<br>(VCE= 40 Vdc, IB= 0)|**ÎÎÎ**<br><br><br>ICEO|**Î**<br>**Î**<br><br><br>-|**ÎÎ**<br><br><br>1.0|**Î**<br><br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc)<br>(VCE= 80 Vdc, VEB(off)= 1.5 Vdc, TC= 150�C)|**ÎÎÎ**<br><br><br>ÎÎÎ<br>**ÎÎÎ**<br>ICEX|**Î**<br>**Î**<br>**Î**<br>**Î**<br>Î**Î**<br>**Î**<br>-<br>-|**ÎÎ**<br><br><br>ÎÎ<br>**ÎÎ**<br>2.0<br>10|**Î**<br>**Î**<br><br>ÎÎ<br>**ÎÎ**<br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= 80 Vdc, IE= 0)|**ÎÎÎ**<br>ICBO|**Î**<br>**Î**<br>-|**ÎÎ**<br>2.0|**Î**<br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)|**ÎÎÎ**<br>IEBO|**Î**<br>**Î**<br>-|**ÎÎ**<br>5.0|**Î**<br>mAdc| ||**ON CHARACTERISTICS**||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 3)<br>(IC= 25 Adc, VCE= 2.0 Vdc)<br>(IC= 50 Adc, VCE= 5.0 Vdc)|**ÎÎÎ**<br><br><br>ÎÎÎ<br>**ÎÎÎ**<br>hFE|**ÎÎ**<br>**Î**<br>**Î**<br>Î**Î**<br>**ÎÎ**<br>15<br>5.0|**ÎÎ**<br><br><br>ÎÎ<br>**ÎÎ**<br>60<br>-|**Î**<br>**Î**<br><br>ÎÎ<br>**ÎÎ**<br>-| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector-Emitter Saturation Voltage (Note 3)<br>(IC= 25 Adc, IB= 2.5 Adc)<br>(IC= 50 Adc, IB= 10 Adc)<br>|ÎÎÎ<br>**ÎÎÎ**<br>VCE(sat)<br><br>|**Î**<br>**Î**<br>Î**Î**<br>**ÎÎ**<br>-<br>-<br><br>|ÎÎ<br>**ÎÎ**<br>1.0<br>5.0<br><br>|**Î**<br>**Î**<br>ÎÎ<br>**ÎÎ**<br>Vdc<br><br>| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter Saturation Voltage (Note 2)<br>(IC= 25 Adc, IB= 2.5 Adc)|**ÎÎÎ**<br>VBE(sat)|**Î**<br>**ÎÎ**<br>-|**ÎÎ**<br>2.0|**Î**<br>**ÎÎ**<br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base-Emitter On Voltage (Note 2)<br>(IC= 25 Adc, VCE= 2.0 Vdc)|**ÎÎÎ**<br>VBE(on)|**Î**<br>**ÎÎ**<br>-|**ÎÎ**<br>2.0|**Î**<br>**ÎÎ**<br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current-Gain - Bandwidth Product<br>(IC= 5.0 Adc, VCE= 10 Vdc, f = 1.0 MHz)|**ÎÎÎ**<br>fT|**Î**<br>**ÎÎ**<br>2.0|**ÎÎ**<br>-|**Î**<br>**ÎÎ**<br>MHz| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Output Capacitance<br>2N5684<br>(VCB= 10 Vdc, IE= 0, f = 0.1 MHz)<br>2N5686|ÎÎÎ<br><br>Cob|**Î**<br><br>Î**Î**<br><br>-<br>-|ÎÎ<br><br>2000<br>1200|**Î**<br><br>ÎÎ<br><br>pF| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Small-Signal Current Gain<br>(IC= 10 Adc, VCE= 5.0 Vdc, f = 1.0 kHz)|**ÎÎÎ**<br><br><br>hfe|**Î**<br>**Î**<br><br><br>15|**ÎÎ**<br><br><br>-|**ÎÎ**<br><br>| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>2. Indicates JEDEC Registered Data.<br>3. Pulse Test: Pulse Width�300μs, Duty Cycle�2.0%.|ÎÎÎ|**Î**<br>Î|ÎÎ|ÎÎ| **==> picture [486 x 254] intentionally omitted <==** **----- Start of picture text -----**<br> VCC -�30 V<br>RL<br>+�2.0 V<br>TO SCOPE<br>0 RB tr ≤ 20 ns 1.00.7<br>tr ≤ -12�V 0.5 tr<br>20�ns 0.3<br>10 to 100 μs<br>0.2 2N5684 (PNP)<br>DUTY CYCLE ≈ 2.0% VCC -�30 V td 2N5686 (NPN)<br>0.1<br>+10�V RL 0.07<br>0.05<br>0 RB TO SCOPEtr ≤ 20 ns 0.030.02 TIVCJCC/I = 25B = 30 V = 10°C<br>-12�V<br>tr ≤ 20�ns<br>0.01<br>10 to 100 μs VBB +�4.0 V 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>DUTY CYCLE ≈ 2.0% IC, COLLECTOR CURRENT (AMP)<br>FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. Figure 3. Turn-On Time<br>INPUT LEVELS ARE APPROXIMATELY AS SHOWN.<br>FOR NPN CIRCUITS, REVERSE ALL POLARITIES.<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br> **Figure 2. Switching Time Test Circuit** **http://onsemi.com** **2** **2N5684 (PNP), 2N5686 (NPN)** **==> picture [490 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.7 D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1 θJC(t) = r(t) θJC P(pk)<br>0.1 0.05 θ JC = 0.584°C/W MAX<br>D CURVES APPLY FOR POWER<br>0.07<br>0.05 0.02 PULSE TRAIN SHOWN t1<br>READ TIME AT t1 t 2<br>0.03 0.01 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2<br>SINGLE PULSE<br>0.02<br>0.01<br>0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000<br>t, TIME (ms)<br>Figure 4. Thermal Response<br>100 500 μs 100 μs There are two limitations on the power handling ability of<br>50 a transistor: average junction temperature and second<br>1.0 ms<br>20 dc 5.0 ms breakdown. Safe operating area curves indicate IC - VC - V - VCE<br>limits of the transistor that must be observed for reliable<br>10 TJ = 200°C operation; i.e., the transistor must not be subjected to greater<br>SECOND BREAKDOWN LIMITED<br>5.0 BONDING WIRE LIMITED dissipation than the curves indicate.<br>2.0 (SINGLE PULSE)THERMALLY LIMITED @ TC = 25°C The data of Figure 5 is based on TJ(pk) = 200�C; TCJ(pk) = 200�C; TC = 200�C; TC�C; TCC; TCC is<br>1.0<br>CURVES APPLY BELOW variable depending on conditions. Second breakdown pulse<br>0.5 RATED VCEO limits are valid for duty cycles to 10% provided TJ(pk)J(pk)<br>0.2 � 200�C. TJ(pk) may be calculated from the data in 200�C. TJ(pk) may be calculated from the data in�C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in<br>2N5684, 2N5686 Figure 4. At high case temperatures, thermal limitations will<br>0.11.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 reduce the power that can be handled to values less than the<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) limitations imposed by second breakdown.<br>RESISTANCE (NORMALIZED)<br>r(t), EFFECTIVE TRANSIENT THERMAL<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VC - V - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200�C; TCJ(pk) = 200�C; TC = 200�C; TC�C; TCC; TCC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)J(pk) � 200�C. TJ(pk) may be calculated from the data in 200�C. TJ(pk) may be calculated from the data in�C. TJ(pk) may be calculated from the data inC. TJ(pk) may be calculated from the data inJ(pk) may be calculated from the data in may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 5. Active-Region Safe Operating Area** **==> picture [487 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0 5000<br>3.0 2N5684 (PNP)2N5686 (NPN) TJ = 25°C TJ = 25°C<br>IB1 = IB2<br>2.0 IC/IB = 10 3000<br>ts VCE = 30 V<br>2000<br>1.0<br>Cib<br>0.8<br>0.6 Cib Cob<br>1000<br>0.4 tf<br>0.3 700 2N5684 (PNP) Cob<br>2N5686 (NPN)<br>0.2 500<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100<br>IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)<br>μ<br>t, TIME (��s)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 6. Turn-Off Time** **Figure 7. Capacitance** **http://onsemi.com** **3** ## **2N5684 (PNP), 2N5686 (NPN)** **==> picture [489 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> PNP NPN<br>2N5684 2N5686<br>500 500<br>300 TJ = +150°C VCE = 2.0 V 300 TJ = +150°C VCE = 2.0 V<br>200 +�25°C VCE = 10 V 200 +�25°C VCE = 10 V<br>100 100<br>70 -�55°C 70<br>50 50 -�55°C<br>30 30<br>20 20<br>10 10<br>7.0 7.0<br>5.0 5.0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 8. DC Current Gain<br>2.0 2.0<br>TJ = 25°C TJ = 25°C<br>1.6 1.6 IC = 10 A 25 A 40 A<br>IC = 10 A 25 A 40 A<br>1.2 1.2<br>0.8 0.8<br>0.4 0.4<br>0 0<br>0.1 0.2 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10<br>IB, BASE CURRENT (AMP) IB, BASE CURRENT (AMP)<br>Figure 9. Collector Saturation Region<br>2.5 2.0<br>TJ = 25°C TJ = 25°C<br>2.0 1.6<br>1.5 1.2<br>1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(sat) @ IC/IB = 10<br>VBE @ VCE = 2.0 V VBE @ VCE = 2.0 V<br>0.5 0.4<br>VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10<br>0 0<br>0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 10. “On” Voltages** **http://onsemi.com** **4** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [96 x 80] intentionally omitted <==** **TO−204 (TO−3) CASE 197A−05 ISSUE K** ## **DATE 21 FEB 2000** **SCALE 1:1** **==> picture [175 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>N<br>C<br>−T− SEATING<br>E PLANE<br>D 2 PL K<br>0.30 (0.012) M T Q M Y [M]<br>U<br>−Y−<br>V L<br>2<br>G B<br>H 1<br>−Q−<br>0.25 (0.010) M T Y M<br>**----- End of picture text -----**<br> NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. |**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---| ||**MIN**|**MAX**|**MIN**|**MAX**| |**A**|1.530 REF||38.86 REF|| |**B**|0.990|1.050|25.15|26.67| |**C**|0.250|0.335|6.35|8.51| |**D**|0.057|0.063|1.45|1.60| |**E**|0.060|0.070|1.53|1.77| |**G**|0.430 BSC||10.92 BSC|| |**H**<br>**K**|0.215 BSC<br>0440<br>0480||5.46 BSC<br>1118<br>1219|| |**L**|.<br>.<br>0.665 BSC||.<br>.<br>16.89 BSC|| |**N**|0.760|0.830|19.31|21.08| |**Q**|0.151|0.165|3.84|4.19| |**U**<br>|1.187 BSC<br><br>||30.15 BSC<br><br>|| |**V**|0.131|0.188|3.33|4.77| ## **GENERIC MARKING DIAGRAM*** **==> picture [101 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2:<br>**----- End of picture text -----**<br> STYLE 3: PIN 1. BASE PIN 1. EMITTER PIN 1. GATE 2. EMITTER 2. BASE 2. SOURCE CASE: COLLECTOR CASE: COLLECTOR CASE: DRAIN STYLE 4: PIN 1. ANODE = 1 2. ANODE = 2 CASE: CATHODES **==> picture [115 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> XXXXXX<br>A<br>YYWW<br>XXXXX = Specific Device Code<br>A = Assembly Locationa<br>YY = Year<br>WW = Work Week<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. **DOCUMENT NUMBER: 98ASB42128B** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed **STATUS: ON SEMICONDUCTOR STANDARD** versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ~~**NEW STANDARD:**~~ © Semiconductor Components Industries, LLC, 2002 **http://onsemi.com** Case Outline Number: **October, 2002 − Rev. 0DESCRIPTION: TO−204 (TO−3) 1 PAGE 1 OF 2XXX** |~~eT ©~~|~~eT ©~~|~~©~~||**DOCUMENT NUMBER:**<br>**98ASB42128B**<br>**PAGE 2 OF 2**<br>~~——~~| |---|---|---|---|---| |**ISSUE**|||**REVISION**|**DATE**| |K|LEGALLY CHANGED TO ON|LEGALLY CHANGED TO ON||21 FEB 2000| **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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Case Outline Number: © Semiconductor Components Industries, LLC, 2003 **February, 2000 − Rev. 05K** **197A** **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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