Illustrative purposes only
2N5657G..
Bipolar (BJT) Single Transistor, NPN, 350 V, 500 mA, 20 W, TO-225, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Product Range: 2NXXXX
- Power Dissipation: 20W
- DC Current Gain hFE: 5hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 10MHz
- Transistor Case Style: TO-225
- DC Current Gain hFE Min: 5hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 500mA
- Collector Emitter Voltage Max: 350V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.214 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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