2N5551BU.

2N5550, 2N5551 

## **Preferred Device** 

## Amplifier Transistors 

## **NPN Silicon** 

## **Features** 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|•|These are Pb−Free Devices*|http://onsemi.com|
|COLLECTOR|
|3|
|MAXIMUM RATINGS|
|2|
|Rating|Symbol|Value|Unit|BASE|
|Collector − Emitter Voltage|VCEO|Vdc|
|2N5550|140|&)|
|2N5551|160|1|
|EMITTER|
|Collector − Base Voltage|VCBO|Vdc|
|2N5550|160|
|2N5551|180|
|Emitter − Base Voltage|VEBO|6.0|Vdc|TO−92|
|Collector Current − Continuous|IC|600|mAdc|CASE 29|
|STYLE 1|
|Total Device Dissipation @ TA = 25|°|C|PD|625|mW|
|Derate above 25|°|C|5.0|mW/|°|C|
|1|
|Derate above 25Total Device Dissipation @ T|°|C|C = 25|°|C|PD|1.512|mW/W|°|C|1 23|2|3|
|STRAIGHT LEAD|BENT LEAD|
|Operating and Storage JunctionTemperature Range|TJ, Tstg|−55 to +150|°|C|BULK PACK|TAPE & REELAMMO PACK|
|=e|
|THERMAL CHARACTERISTICS|
|Characteristic|Symbol|Max|Unit|MARKING DIAGRAM|
|Thermal Resistance, Junction−to−Ambient|R|JA|200|°|C/W|
|Thermal Resistance, Junction−to−Case|R|JC|83.3|°|C/W|

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Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

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2N<br>555x<br>AYWW<br>x = 0 or 1<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**Preferred** devices are recommended choices for future use and best overall value. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2007 **March, 2007 − Rev. 5** 

**2N5550/D** 

**2N5550, 2N5551** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Breakdown Voltage (Note 1)<br>(IC= 1.0 mAdc, IB= 0)<br>2N5550<br>2N5551|V(BR)CEO|140<br>160|−<br>−|Vdc|
|Collector−Base Breakdown Voltage<br>(IC= 100�Adc, IE= 0 )<br>2N5550<br>2N5551|V(BR)CBO|160<br>180|−<br>−|Vdc|
|Emitter−Base Breakdown Voltage<br>(IE= 10�Adc, IC= 0)|V(BR)EBO|6.0|−|Vdc|
|Collector Cutoff Current<br>(VCB= 100 Vdc, IE= 0)<br>2N5550<br>(VCB= 120 Vdc, IE= 0)<br>2N5551<br>(VCB= 100 Vdc, IE= 0, TA= 100°C)<br>2N5550<br>(VCB= 120 Vdc, IE= 0, TA= 100°C)<br>2N5551|ICBO|−<br>−<br>−<br>−|100<br>50<br>100<br>50|nAdc<br>�Adc|
|Emitter Cutoff Current<br>(VEB= 4.0 Vdc, IC= 0)|IEBO|−|50|nAdc|
|**ON CHARACTERISTICS**(Note 1)|||||
|DC Current Gain<br>(IC= 1.0 mAdc, VCE= 5.0 Vdc)<br>2N5550<br>2N5551<br>(IC= 10 mAdc, VCE= 5.0 Vdc)<br>2N5550<br>2N5551<br>(IC= 50 mAdc, VCE= 5.0 Vdc)<br>2N5550<br>2N5551|hFE|60<br>80<br>60<br>80<br>20<br>30|−<br>−<br>250<br>250<br>−<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>Both Types<br>(IC= 50 mAdc, IB= 5.0 mAdc)<br>2N5550<br>2N5551|VCE(sat)|−<br>−<br>−|0.15<br>0.25<br>0.20|Vdc|
|Base−Emitter Saturation Voltage<br>(IC= 10 mAdc, IB= 1.0 mAdc)<br>Both Types<br>(IC= 50 mAdc, IB= 5.0 mAdc)<br>2N5550<br>2N5551|VBE(sat)|−<br>−<br>−|1.0<br>1.2<br>1.0|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain — Bandwidth Product<br>(IC= 10 mAdc, VCE= 10 Vdc, f = 100 MHz)|fT|100|300|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)|Cobo|−|6.0|pF|
|Input Capacitance<br>(VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz)<br>2N5550<br>2N5551|Cibo|−<br>−|30<br>20|pF|
|Small−Signal Current Gain<br>(IC= 1.0 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|50|200|−|
|Noise Figure<br>(IC= 250�Adc, VCE= 5.0 Vdc, RS= 1.0 k�, f = 1.0 kHz)<br>2N5550<br>2N5551|NF|−<br>−|10<br>8.0|dB|



1. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**2N5550, 2N5551** 

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500<br>300200 TJ = 125°C VVCECE = 1.0 V = 5.0 V<br>25°C<br>100<br>−�55°C<br>50<br>30<br>20<br>10<br>7.0<br>5.0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>IC, COLLECTOR CURRENT (mA)<br>Figure 1. DC Current Gain<br>1.0<br>0.9<br>0.8<br>0.7<br>IC = 1.0 mA 10 mA 30 mA 100 mA<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50<br>IB, BASE CURRENT (mA)<br>Figure 2. Collector Saturation Region<br>10 [1] 1.0<br>VCE = 30 V TJ = 25°C<br>10 [0]<br>0.8<br>10 [−1] TJ = 125°C VBE(sat) @ IC/IB = 10<br>IC = ICES 0.6<br>10 [−2] 75°C<br>0.4<br>10 [−3] REVERSE FORWARD<br>25°C 0.2<br>10 [−4]<br>VCE(sat) @ IC/IB = 10<br>10 [−5] 0<br>0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100<br>VBE, BASE−EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>FE<br>h     , DC CURRENT GAIN<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>μ<br>V, VOLTAGE (VOLTS)<br>, COLLECTOR CURRENT (��A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 3. Collector Cut−Off Region** 

**Figure 4. “On” Voltages** 

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**3** 

**2N5550, 2N5551** 

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2.5<br>2.0 TJ = −55°C to +135°C<br>1.5<br>1.0<br>0.5 �VC for VCE(sat)<br>0<br>−0.5<br>−1.0<br>�VB for VBE(sat)<br>−1.5<br>−2.0<br>−2.5<br>0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100<br>IC, COLLECTOR CURRENT (mA)<br>°<br>V, TEMPERATURE COEFFICIENT (mV/ C)<br>θ<br>**----- End of picture text -----**<br>


**Figure 5. Temperature Coefficients** 

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100<br>70 TJ = 25°C<br>50<br>30<br>10.2 V VBB VCC<br>−�8.8 V 30 V 20<br>Vin<br>100 3.0 k RC 10<br>10 �s 0.25 �F RB 7.0 Cibo<br>INPUT PULSE Vout 5.0<br>5.1 k<br>3.0 Cobo<br>tr, tf ≤ 10 ns Vin 100 1N914<br>DUTY CYCLE = 1.0% 2.0<br>1.0<br>0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20<br>Values Shown are for IC @ 10 mA<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 6. Switching Time Test Circuit Figure 7. Capacitances<br>1000 5000<br>500 ITCJ/I = 25B = 10°C 3000 tf @ VCC = 120 V ITCJ/I = 25B = 10°C<br>2000<br>300 tr @ VCC = 120 V tf @ VCC = 30 V<br>200 1000<br>tr @ VCC = 30 V<br>100 500<br>50 td @ VEB(off) = 1.0 V 300 ts @ VCC = 120 V<br>200<br>30 VCC = 120 V<br>20 100<br>10 50<br>0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>C, CAPACITANCE (pF)<br>t, TIME (ns) t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 8. Turn−On Time** 

**Figure 9. Turn−Off Time** 

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**4** 

**2N5550, 2N5551** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|2N5550G|TO−92<br>(Pb−Free)|5000 Units / Bulk|
|2N5550RLRPG|TO−92<br>(Pb−Free)|2000 / Tape & Ammo Box|
|2N5551G|TO−92<br>(Pb−Free)|5000 Units / Bulk|
|2N5551RL1G|TO−92<br>(Pb−Free)|2000 / Tape & Reel|
|2N5551RLRAG|TO−92<br>(Pb−Free)||
|2N5551RLRPG|TO−92<br>(Pb−Free)|2000 / Tape & Ammo Box|
|2N55551ZL1G|TO−92<br>(Pb−Free)||



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**http://onsemi.com** 

**5** 

**2N5550, 2N5551** 

## **PACKAGE DIMENSIONS** 

**TO−92 (TO−226)** CASE 29−11 ISSUE AM 

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A NOTES:<br>B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI<br>BULK PACK Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>| R rn 3. CONTOUR OF PACKAGE BEYOND DIMENSION R<br>a IS UNCONTROLLED.<br>4. LEAD DIMENSION IS UNCONTROLLED IN P AND<br>P BEYOND DIMENSION K MINIMUM.<br>L<br>SEATING INCHES MILLIMETERS<br>PLANE K DIM MIN MAX MIN MAX<br>ier, — A 0.175 0.205 4.45 5.20<br>B 0.170 0.210 4.32 5.33<br>C 0.125 0.165 3.18 4.19<br>D 0.016 0.021 0.407 0.533<br>X X D G 0.045 0.055 1.15 1.39<br>G H 0.095 0.105 2.42 2.66<br>J 0.015 0.020 0.39 0.50<br>H J K 0.500 −−− 12.70 −−−<br>L 0.250 −−− 6.35 −−−<br>V C N 0.080 0.105 2.04 2.66<br>a <— ‘’ Ssa P −−− ee 0.100 ee −−− 2.54 |<br>SECTION X−X R 0.115 −−− 2.93 −−−<br>1 N V 0.135 −−− 3.43 −−−<br>N<br>ae =====<br>R A B BENT LEAD NOTES:1. DIMENSIONING AND TOLERANCING PER<br>TAPE & REEL ASME Y14.5M, 1994.<br>a 2. CONTROLLING DIMENSION:<br>AMMO PACK MILLIMETERS.<br>3. CONTOUR OF PACKAGE BEYOND<br>DIMENSION R IS UNCONTROLLED.<br>P 4. LEAD DIMENSION IS UNCONTROLLED IN<br>T P AND BEYOND DIMENSION K MINIMUM.<br>SEATINGPLANE K DIM MILLIMETERSMIN MAX<br>A 4.45 5.20<br>B 4.32 5.33<br>C 3.18 4.19<br>a X X D GD 0.402.40 0.542.80<br>G J 0.39 0.50<br>J K 12.70 −−−<br>ti = N 2.04 2.66<br>“Ute V C 7 PR 1.502.93 4.00−−−<br>| i SECTION X−X = V 3.43 −−−<br>1 N STYLE 1:<br>PIN 1. EMITTER<br>ic a 2. BASE<br>3. COLLECTOR<br>**----- End of picture text -----**<br>


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**2N5550/D** 

**6**