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2N5321
BJT, NPN, 50V, 2A, TO-39
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: SOLID STATE
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Pol; BJT, NPN, 50V, 2A, TO-39; Transistor Polarity:NPN; Collector Emitter Voltage Max:50V; Continuous Collector Current:2A; Power Dissipation:10W; Transistor Mounting:Through Hole; No
- MSL: -
- No. of Pins: 3Pins
- Qualification: -
- DC Current Gain hFE Min: 250hFE
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.94 € |
| Current stock | 50+ |
| Lead time | 7 days |
Datasheet
S 46 FARRAND STREET = BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com SILICON POWER SWITCHING TRANSISTORS —_ wh. ri\ | \\ \\ cBe 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package ## Medium Power Amplifier and Switching Applications |ABSOLUTE MAXIMUM RATINGS|||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---| |DESCRIPTION|SYMBOL|||2N5320<br>2N5321|||2N5322||2N5323||UNITS| |Collector Emitter Voltage|||||||||||| |Collector Base Voltage|||||||||||| |Emitter Base Voltage|||||||||||| |Collector Current - Continuous<br>BaseCuvent<br>SCC<br>idSCPSSC~C“—~sCSCSSSSSC“‘“‘CSNNCNC#C#“C#“N‘COAACCSY<br>Power Dissipation@ T,=25°C<br>1|||||||||||| |Derate Above 25°C|||||5.71||||||mW/ °C| |PowerDissipation@T,=25°C<br>Derate Above 25°C|aa||||10<br>57.14||||||mW/ °C| |Operating AndStorageJunction<br>Temperature Range||Ty Tsig||-65|to|+200|||||6| |THERMAL CHARACTERISTICS|||||||||||| |Junction to Ambient in free air|||||||||||| |Junction to Case|||||||||||| |ELECTRICAL CHARACTERISTICS (T,=25°C||unless|specified otherwise)||||||||| |DESCRIPTION<br>Collector EmitterVoltage|SYMBOL<br>VecEo|||TESTCONDITION<br>e=100mA, Ig=0||||MIN|[||||MAX [| UNITS|| |||,||2N5320/5322|||75||||V| |||||2N5321/5323|||50||||Vv| |CollectorCut OffCurrent||loex<br>|Vce=70V,||Vce=70V, Vge=1-5V,T=150°C|||||||5|mA| |||||2N5320/5322|||||||| |||Vce245V, Vec=1.5V, T.=150°C|||||||||| |||||2N5321/5323||||||°|mA| |||||2N5320/5322||||||100|HA| |||||2N5321/5323|||||||| |Emitter Cut OffCurrent||leBo||Vae=5V, Ie=O<br>2N5321/5323||||||400|pA| |ee||||Vge=7V,Ig=0<br>2N5320/5322||||||100|A| Data Sheet SILICON POWER SWITCHING TRANSISTORS — —_— 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP **==> picture [25 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> Wh<br>**----- End of picture text -----**<br> ## Metal Can Package ## cBe |ELECTRICAL CHARACTERISTICS (T,=25°C|ELECTRICAL CHARACTERISTICS (T,=25°C|unless|unless|specified otherwise)||||| |---|---|---|---|---|---|---|---|---| |DESCRIPTION|SYMBOL|||TESTCONDITION||| MIN [TYP]<br>MAX [|||UNITS| |DC Current Gain|“hee|||Ic=1A, Veg=2V||||| |||||2N5320/5322|—*|10||| |||||Ic=0.5A, Vce=4V||||| |||||2N5320/5322||30|130|| |||||2N5321/5323||40|250|| |Collector EmitterSaturation Voltage|*V cE (sat)|||Ip=500mA, |p=50mA||||| |||||2N5320|||0.5|Vv| |||||2N5321|||0.8|Vv| |||||2N5322|||0.7|Vv| |||||2N5323|||1.2|Vv| |Base EmitterOn Voltage|“VBE (on)|||Ic=500mA, Vece=4V||||| |||||2N5320/5322|||1.1|Vv| |||||2N5321/5323|||1.4|Vv| |DYNAMIC CHARACTERISTICS<br>SmallSignal Current Gain||||([=somANesw. Frowne||[5 | ||_|||| |SWITCHING CHARACTERISTICS||||||||| |Turn On time||ton||Vec=30V, 1-=500mA, tg,=50mA||||| |||||2N5320/5321|||80|ns| |||||2N5322/5323|||100|ns| |Turn Off time||torr|Vec=30V, |-=500mA, Ip1=lg2=50MA|||||| |||||2N5320/5321|||800|ns| |||||2N5322/5323|||1000|ns| *Pulsed: Pulse width <300s, duty cycle <2% Data Sheet 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package ## TO-39 Metal Can Package **==> picture [361 x 273] intentionally omitted <==** **----- Start of picture text -----**<br> — A<br><B><br>' (B | 7.74 | 850 |<br>O fc | 609 | 660<br>:<br>8 4.82<br>.<br>2<br>_ | 2:= 42270DEG|148 DEG=<br>eh<br>G+ -<br>b> PIN CONFIGURATION<br>ee ye Vv \ ey 1. EMITTER<br>; X< P3 2. BASE<br>H [“&] “see \ 3. COLLECTOR<br>**----- End of picture text -----**<br>
Updated at March 27, 2026
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