2N5240

Bipolar (BJT) Single Transistor, NPN, 300 V, 5 A, 100 W, TO-3, Through Hole

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Manufacturer: SOLID STATE
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:2MHz; Power Dissipation Pd:100W; DC Collector Current:5A; DC Current Gain hFE:20hFE; Transistor Case S
MSL: -
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 100W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 2MHz
Transistor Case Style: TO-3
DC Current Gain hFE Min: 20hFE
Operating Temperature Max: 200°C
Continuous Collector Current: 5A
Collector Emitter Voltage Max: 300V

Delivery and price
Units per pack	1000
Price	2.32 €
Current stock	50+
Lead time	7 days

Datasheet

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S 46 FARRAND STREET<br>BLOOMFIELD, NEW JERSEY 07003 www.solidstateinc.com<br>(rr<br>**----- End of picture text -----**<br>


## HIGH-VOLTAGE POWER NPN SILICON TRANSISTORS 

... designed for use in high-voltage, high-speed, power switching regulators, converter, converter, inverter, motor control system application. 

FEATURES: 

- Collector-Emitter Sustaining VoltageVceo(sus) =300 V (Min) 

* Collector-Emitter Saturation VoltageVee(sa)=2.5 V (Max.) @ Ic=2.0A *DC Current gain hfe=20 (Min.) Ic=2.0A 

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*DC Current gain hfe=20 (Min.) Ic=2.0A 5 AMPERES<br>POWER TRANSISTOR<br>NPN SILICON<br>300 VOLTS<br>100 WATTS<br>MAXIMUM RATINGS<br>Emitter-Base Voltage | ve | 60 |<br>Collector Current-Continuous 5 A TO-3<br>Peak c<br>BaseCurent= |<br>Derate above 25°C 0.57 wec | |<br>Operating and Storage Junction °, cl —=6<br>Temperature Range Ts, Tste 6S to +200 C o] _.||£ t<br>—H_.<br>al<br>THERMAL CHARACTERISTICS J<br>**----- End of picture text -----**<br>


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PIN 1.BASE<br>2.EMITTER<br>a FIGURE-1 POWER DERATING COLLECTOR(GASE)<br>Ew<br>=5° | min | [MAX] |<br>eg > : oo po Pe [1938 39.96[2923<br>B nw | D | 11.18 | 12.19 |<br>ODOa. N Qo | F | o92 | 1.09 |<br>= Ky<br>Oo 7 - ~<br>a so 100 180 200 K_| 10.67 | 11.18<br>Tc, TEMPERATURE(C)<br>**----- End of picture text -----**<br>


2N5240 NPN 

## ee ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted 

|OFF CHARACTERISTICS||||||
|---|---|---|---|---|---|
|Collector-Emitter Sustaining Voltage||||||
|Base-EmitterBreakdown Voltage<br>(le= 0.02Ade, Ic = 0)|V|EBO|||V|
|Collector Current||||||
|Emitter Cutoff Current||||||
|ON CHARACTERISTICS(1||||||
|DC current gain||||||
|(Ic= 0.4 Adc, Vce = 10.0Vdc )<br>(Ic=2.0Adc,Vee= 10.0Vdc )<br>(Ic=4.5Adc,Vce = 10.0Vde )|nre||oD<br>5|a<br>_||
|Collector-Emitter Saturation Voltage||||||
|(Ic = 2.0 Ade, Ig = 0.25Adc )|VcE(sat)|||2.5|Vdc|
|Ic = 4.5 Ade, Ip = 1.125Adc||||5.0||
|Base-Emitter Saturation Voltage||||||
|( lc= 20 Ade, Ig = 2.0Adc )|Vee(sat)|||1.8|Vdc|
|Ic= 50 Ade, Ip = 10Adc||||3.5||
|Base-EmitterOn Voltage||||||
|DYNAMIC CHARACTERISTICS||||||
|Current-Gain—Bandwidth Product||||||
|OutputCapacitance||||||

Updated at March 27, 2026

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