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This product is RoHS compilant

2N5190G

Bipolar (BJT) Single Transistor, NPN, 40 V, 4 A, 40 W, TO-225, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Power Dissipation: 40W
  • DC Current Gain hFE: 10hFE
  • Transistor Mounting: Through Hole
  • Transistor Polarity: NPN
  • Transition Frequency: 2MHz
  • Transistor Case Style: TO-225
  • DC Current Gain hFE Min: 10hFE
  • Operating Temperature Max: 150°C
  • Continuous Collector Current: 4A
  • Collector Emitter Voltage Max: 40V
Delivery and price
Units per pack 5000
Price 0.606 €
Current stock 476
Lead time 7 days
PDF File icon Datasheet