2N4921G

## 2N4921G, 2N4922G, 2N4923G 

## Medium-Power Plastic NPN Silicon Transistors 

These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. 

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## **Features** 

## **1.0 AMPERE GENERAL PURPOSE POWER TRANSISTORS 40−80 VOLTS, 30 WATTS** 

- Low Saturation Voltage 

- Excellent Power Dissipation Due to Thermopad Construction 

- Excellent Safe Operating Area 

- Complement to PNP 2N4920G 

- These Devices are Pb−Free and are RoHS Compliant** 

|•|•These Devices are Pb−Free and are RoHS Compliant**||||
|---|---|---|---|---|
|•|• These Devices are Pb−Free and are RoHS Compliant**|||COLLECTOR|
|||||2, 4|
||**MAXIMUM RATINGS**||||
|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Collector−Emitter Voltage<br>2N4921G<br>2N4922G<br>2N4923G<br>VCEO<br>40<br>60<br>80<br>Vdc<br>~~—TAn~~||||3<br>BASE<br>1<br>EMITTER|
|Collector−Emitter Voltage<br>2N4921G<br>2N4922G<br>2N4923G<br>VCB<br>40<br>60<br>80<br>Vdc<br>Emitter Base Voltage<br>VEB<br>5.0<br>Vdc<br>Collector Current − Continuous (Note 1)<br>IC<br>1.0<br>Adc<br>Collector Current − Peak (Note 1)<br>ICM<br>3.0<br>Adc<br>Base Current − Continuous<br>IB<br>1.0<br>Adc<br>Total Power Dissipation<br>PD<br>~~== ~~||||**TO−225**<br>**CASE 77−09**<br>**STYLE 1**<br>1 2 3<br> ~~@~~|
||@ TC= 25 C<br>30|W|||
||Derate above 25 C<br>0.24|mW/ C||**MARKING DIAGRAM**|
||Operating and Storage Junction<br>Temperature Range<br>TJ, Tstg<br>–65 to +150|C|||



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YWW<br>2<br>N492xG<br>**----- End of picture text -----**<br>


Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). 

Y = Year WW = Work Week 2N492x = Device Code x = 1, 2, or 3 G = Pb−Free Package 

## **THERMAL CHARACTERISTICS** (Note 2) 

|**Characteristic**|**Symbol**|**Max**|**Unit**|
|---|---|---|---|
|Thermal Resistance, Junction−to−Case|R JC|4.16|C/W|



2. Recommend use of thermal compound for lowest thermal resistance. 

## **ORDERING INFORMATION** 

- *Indicates JEDEC Registered Data. 

|**Device**|**Package**|**Shipping**|
|---|---|---|
|2N4921G|TO−225<br>(Pb−Free)|500 Units / Box|
|2N4922G|TO−225<br>(Pb−Free)|500 Units / Box|
|2N4923G|TO−225<br>(Pb−Free)|500 Units / Box|



- ** For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 14** 

**2N4921/D** 

## **2N4921G, 2N4922G, 2N4923G** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 � C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Collector−Emitter Sustaining Voltage (Note 3)<br>(IC= 0.1 Adc, IB= 0)<br>2N4921G<br>2N4922G<br>2N4923G|VCEO(sus)|40<br>60<br>80|−<br>−<br>−|Vdc|
|Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4921G<br>(VCE= 30 Vdc, IB= 0)<br>2N4922G<br>(VCE= 40 Vdc, IB= 0)<br>2N4923G|ICEO|−<br>−<br>−|0.5<br>0.5<br>0.5|mAdc|
|Collector Cutoff Current<br>(VCE= Rated VCEO, VEB(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VEB(off)= 1.5 Vdc, TC= 125�C|ICEX|−<br>−|0.1<br>0.5|mAdc|
|Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)|ICBO|−|0.1|mAdc|
|Emitter Cutoff Current<br>(VEB= 5.0 Vdc, IC= 0)|IEBO|−|1.0|mAdc|
|**ON CHARACTERISTICS**|||||
|DC Current Gain (Note 3)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)|hFE|40<br>30<br>10|−<br>150<br>−|−|
|Collector−Emitter Saturation Voltage (Note 3)<br>(IC= 1.0 Adc, IB= 0.1 Adc)|VCE(sat)|−|0.6|Vdc|
|Base−Emitter Saturation Voltage (Note 3)<br>(IC= 1.0 Adc, IB= 0.1 Adc)|VBE(sat)|−|1.3|Vdc|
|Base−Emitter On Voltage (Note 3)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)|VBE(on)|−|1.3|Vdc|
|**SMALL−SIGNAL CHARACTERISTICS**|||||
|Current−Gain − Bandwidth Product<br>(IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)|fT|3.0|−|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 100 kHz)|Cob|−|100|pF|
|Small−Signal Current Gain<br>(IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)|hfe|25|−|−|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: PW ≈ 300 � s, Duty Cycle ≈ 2.0%. 

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**2** 

**2N4921G, 2N4922G, 2N4923G** 

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40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br>


**Figure 1. Power Derating** 

Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. 

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APPROX<br>TURN-ON PULSE<br>+11 V<br>t1 VCC<br>Vin RC<br>Vin<br>VBE(off) RB<br>Cjd�<<�Ceb<br>t3<br>-�4.0 V<br>APPROX SCOPE<br>+11 V t1 ≤ 15 ns<br>100 < t2 ≤ 500 �s<br>Vin t3 ≤ 15 ns<br>APPROX 9.0 V DUTY CYCLE ≈ 2.0%<br>t2 RB and RC varied to<br>TURN-OFF PULSE obtain desired<br>current levels<br>**----- End of picture text -----**<br>


**Figure 2. Switching Time Equivalent Circuit** 

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5.0<br>V CC  = 30 V IC/IB = 10, UNLESS NOTED<br>3.0 IC/IB = 20 TJ = 25°C<br>2.0 TJ = 150°C<br>VCC = 60 V<br>1.0<br>0.7<br>0.5 tr<br>VCC = 30 V<br>0.3 td<br>0.2 VCC = 60 V<br>VBE(off) = 2.0 V<br>0.1 VCC = 30 V<br>0.07 VBE(off) = 0<br>0.05<br>10 20 30 50 70 100 200 300 500 700 1000<br>IC, COLLECTOR CURRENT (mA)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br>


**Figure 3. Turn−On Time** 

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**3** 

**2N4921G, 2N4922G, 2N4923G** 

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1.0<br>0.7 D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1 �JC(t) = r(t) �JC P(pk)<br>0.1 0.05 �JC = 4.16°C/W MAX<br>D CURVES APPLY FOR POWER<br>0.07<br>PULSE TRAIN SHOWN<br>0.05 0.01 t1<br>READ TIME AT t 1 t2<br>0.03 SINGLE PULSE T J(pk) - T C  = P (pk) � JC (t) DUTY CYCLE, D = t 1 /t 2<br>0.02<br>0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME (ms)<br>Figure 4. Thermal Response<br>10 There are two limitations on the power handling ability of<br>5.07.0 100 �s a transistor: average junction temperature and second<br>5.0 ms 1.0 ms breakdown. Safe operating area curves indicate IC − VCEC − VCE − VCECE<br>3.0 operation i.e., the transistor must not be subjected to greater<br>2.0 TJ = 150°C dc dissipation than the curves indicate.<br>The data of Figure 5 is based on TJ(pk) = 150�C; TCJ(pk) = 150�C; TC = 150�C; TC�C; TCC; TCC<br>1.0 is variable depending on conditions. Second breakdown<br>0.7 SECOND BREAKDOWN pulse limits are valid for duty cycles to 10% provided<br>0.5 LIMITED �C. At high case temperatures, thermal<br>BONDING WIRE LIMITED TJ(pk) ≤ 150J(pk) ≤ 150≤ 150 150�C. At high case temperatures, thermal C. At high case temperatures, thermal<br>0.3 THERMALLY LIMITED @ TC = 25°C limitations will reduce the power that can be handled to<br>0.2 PULSE CURVES APPLY BELOW values less than the limitations imposed by second<br>RATED VCEO breakdown.<br>0.1<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>Figure 5. Active−Region Safe Operating Area<br>5.0 5.0<br>3.0 IC/IB = 20 3.0 IC/IB = 20<br>2.0 2.0<br>1.0 1.0<br>0.7 IC/IB = 10 IC/IB = 20 0.7<br>0.5 0.5<br>0.3 0.3 IC/IB = 10<br>0.2 TTJJ = 25 = 150°C°C 0.2 TTJJ = 25 = 150°C°C<br>0.070.1 ItB1s′ = t = IsB2 - 1/8 tf 0.070.1 VIB1CC = I = 30 VB2<br>0.05 0.05<br>10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>r(t), TRANSIENT THERMAL<br>RESISTANCE (NORMALIZED)<br>IC, COLLECTOR CURRENT (AMP)<br>μ<br>μ<br>f, FALL TIME (��s)t<br>′<br>s , STORAGE TIME (��s)t<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCEC − VCE − VCECE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figure 5 is based on TJ(pk) = 150�C; TCJ(pk) = 150�C; TC = 150�C; TC�C; TCC; TCC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150J(pk) ≤ 150≤ 150 150�C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

**Figure 6. Storage Time** 

**Figure 7. Fall Time** 

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**4** 

**2N4921G, 2N4922G, 2N4923G** 

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1000 1.0<br>700 VCE = 1.0 V<br>500 IC = 0.1 A 0.25 A 0.5 A 1.0 A<br>0.8<br>300<br>200 TJ = 150 ° C 0.6 TJ = 25°C<br>100 25°C<br>70 0.4<br>50 -�55°C<br>30<br>0.2<br>20<br>10 0<br>2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200<br>IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 8. Current Gain Figure 9. Collector Saturation Region<br>10 [8] 1.5<br>IC = 10 x ICES VCE = 30 V TJ = 25°C<br>10 [7] 1.2<br>IC = 2 x ICES<br>10 [6] 0.9<br>IC ≈ ICES<br>VBE(sat) @ IC/IB = 10<br>10 [5] 0.6<br>VBE @ VCE = 2.0 V<br>ICES VALUES<br>10 [4] OBTAINED FROM 0.3<br>FIGURE 12<br>VCE(sat) @ IC/IB = 10<br>10 [3] 0<br>0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000<br>TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>VOLTAGE (VOLTS)<br>RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)<br>**----- End of picture text -----**<br>


**Figure 10. Effects of Base−Emitter Resistance** 

**Figure 11. “On” Voltage** 

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10 [4] +�2.5<br>10 [3] T J  = 150°C +�2.0 *APPLIES FOR IC/IB ≤ hFE�@�VCE�2 ��1.0�V<br>+�1.5<br>10 [2] 100°C +�1.0 TJ = 100°C to 150°C<br>25°C +�0.5 *�VC FOR VCE(sat)<br>10 [1] 0 -�55°C to +100°C<br>IC = ICES -�0.5<br>10 [0]<br>VCE = 30 V -�1.0<br>-�1.5<br>10 [-1]<br>�VB FOR VBE<br>-�2.0<br>REVERSE FORWARD<br>10 [-�2] -�2.5<br>-�0.2 -�0.1 0 +�0.1 +�0.2 +�0.3 +�0.4 +�0.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000<br>VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>C)°<br>μ<br>, COLLECTOR CURRENT (��A)<br>IC<br>TEMPERATURE COEFFICIENTS (mV/<br>**----- End of picture text -----**<br>


**Figure 12. Collector Cut−Off Region** 

**Figure 13. Temperature Coefficients** 

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**5** 

**2N4921G, 2N4922G, 2N4923G** 

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PACKAGE DIMENSIONS<br>TO−225<br>CASE 77−09<br>4 ISSUE AC<br>1 3<br>2 3 2 1<br>FRONT VIEW BACK VIEW<br>E NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A1 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>PIN 4 MILLIMETERS<br>BACKSIDE TAB DIM MIN MAX<br>A 2.40 3.00<br>A1 1.00 1.50<br>b 0.60 0.90<br>D b2 0.51 0.88<br>P c 0.39 0.63<br>D 10.60 11.10<br>E 7.40 7.80<br>1 2 3<br>e 2.04 2.54<br>L 14.50 16.63<br>L1 1.27 2.54<br>P 2.90 3.30<br>L1 Q 3.80 4.20<br>STYLE 1:<br>L PIN 1.2., 4. EMITTERCOLLECTOR<br>3. BASE<br>Oh#<br>2X b2<br>2X e<br>| b c a l<br>FRONT VIEW SIDE VIEW<br>**----- End of picture text -----**<br>


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**2N4921/D** 

**6**