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2N4920G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 80 V, 1 A, 30 W, TO-225, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:3MHz; Power Dissipation Pd:30W; DC Collector C; Available until stocks are exhausted Alternative available
- MSL: -
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: 2NXXXX
- Qualification: -
- Power Dissipation: 30W
- Transistor Mounting: Through Hole
- Transistor Polarity: PNP
- Transition Frequency: 3MHz
- Transistor Case Style: TO-225
- DC Current Gain hFE Min: 10hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 80V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.392 € |
| Current stock | 1000+ |
| Lead time | 7 days |
Datasheet
2N4918 - 2N4920 Series ## Medium-Power Plastic PNP Silicon Transistors These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. ## **Features** ## **http://onsemi.com** - Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A - Excellent Power Dissipation, PD = 30 W @ TC = 25 C ## **3.0 A, 40−80 V, 30 W GENERAL PURPOSE POWER TRANSISTORS** - Excellent Safe Operating Area - Gain Specified to IC = 1.0 A • Complement to NPN 2N4921, 2N4922, 2N4923 • Pb−Free Package is Available* **MAXIMUM RATINGS** 4 **Rating Symbol Value Unit** Collector − Emitter Voltage VCEO Vdc 2N4918 40 2N4919 60 1 3 2N4920 80 2 3 2 1 Collector − Base Voltage VCBO Vdc **FRONT VIEW BACK VIEW** 2N4918 40 2N4919 60 **TO−225** 2N4920 80 **CASE 077 STYLE 1** Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc (Note 1) (Note 2) 3.0 **MARKING DIAGRAM** Base Current IB 1.0 Adc Total Power Dissipation @ TDerate above 25 ° C A = 25 ° C PD 0.2430 W/W ° C YWW 2N Operating and Storage Junction TJ, Tstg −65 to +150 ° C 49xx Temperature Range xx = 18, 19, 20 Stresses exceeding those listed in the Maximum Ratings table may damage Y = Year ~~on~~ the device. If any of these limits are exceeded, device functionality should not ~~:~~ be assumed, damage may occur and reliability may be affected. WW = Work Week 1. The 1.0 A max IC value is based upon JEDEC current gain requirements. The 3.0 A max value is based upon actual current−handling capability of the device (See Figure 5). ## **ORDERING INFORMATION** 2. Indicates JEDEC Registered Data for 2N4918 Series. See detailed ordering and shipping information on page 2 of this data sheet. ## **THERMAL CHARACTERISTICS** (Note 3) |**Characteristic**|**Symbol**|**Max**|**Unit**| |---|---|---|---| |Thermal Resistance,<br>Junction−to−Case|JC|4.16|°C/W| 3. Recommend use of thermal compound for lowest thermal resistance. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **2N4918/D** **1** © Semiconductor Components Industries, LLC, 2004 **January, 2017 − Rev. 12** ## **2N4918 − 2N4920 Series** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 4)<br>(IC= 0.1 Adc, IB= 0)<br>2N4918<br>2N4919<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>60<br>80<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4918<br>(VCE= 30 Vdc, IB= 0)<br>2N4919<br>(VCE= 40 Vdc, IB= 0)<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.5<br>0.5<br>0.5<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc, TC= 125�C<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>0.1<br>0.5<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.1<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>1.0<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 4)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>30<br>10<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>150<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.6<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.3<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 4)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.3<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SMALL−SIGNAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>3.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 100 kHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>100<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>ÎÎÎÎÎ<br>hfe<br>ÎÎ**Î**<br>25<br>ÎÎ**Î**<br>−<br>ÎÎ<br>−<br>4. Pulse Test: PW�300�s, Duty Cycle�2.0%|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 4)<br>(IC= 0.1 Adc, IB= 0)<br>2N4918<br>2N4919<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>60<br>80<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4918<br>(VCE= 30 Vdc, IB= 0)<br>2N4919<br>(VCE= 40 Vdc, IB= 0)<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.5<br>0.5<br>0.5<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc, TC= 125�C<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>0.1<br>0.5<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.1<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>1.0<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 4)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>30<br>10<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>150<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.6<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.3<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 4)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.3<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SMALL−SIGNAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>3.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 100 kHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>100<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>ÎÎÎÎÎ<br>hfe<br>ÎÎ**Î**<br>25<br>ÎÎ**Î**<br>−<br>ÎÎ<br>−<br>4. Pulse Test: PW�300�s, Duty Cycle�2.0%|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 4)<br>(IC= 0.1 Adc, IB= 0)<br>2N4918<br>2N4919<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>60<br>80<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4918<br>(VCE= 30 Vdc, IB= 0)<br>2N4919<br>(VCE= 40 Vdc, IB= 0)<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.5<br>0.5<br>0.5<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc, TC= 125�C<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>0.1<br>0.5<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.1<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>1.0<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 4)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>30<br>10<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>150<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.6<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.3<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 4)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.3<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SMALL−SIGNAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>3.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 100 kHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>100<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>ÎÎÎÎÎ<br>hfe<br>ÎÎ**Î**<br>25<br>ÎÎ**Î**<br>−<br>ÎÎ<br>−<br>4. Pulse Test: PW�300�s, Duty Cycle�2.0%|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 4)<br>(IC= 0.1 Adc, IB= 0)<br>2N4918<br>2N4919<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>60<br>80<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4918<br>(VCE= 30 Vdc, IB= 0)<br>2N4919<br>(VCE= 40 Vdc, IB= 0)<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.5<br>0.5<br>0.5<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc, TC= 125�C<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>0.1<br>0.5<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.1<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>1.0<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 4)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>30<br>10<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>150<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.6<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.3<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 4)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.3<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SMALL−SIGNAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>3.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 100 kHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>100<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>ÎÎÎÎÎ<br>hfe<br>ÎÎ**Î**<br>25<br>ÎÎ**Î**<br>−<br>ÎÎ<br>−<br>4. Pulse Test: PW�300�s, Duty Cycle�2.0%|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 4)<br>(IC= 0.1 Adc, IB= 0)<br>2N4918<br>2N4919<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>60<br>80<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4918<br>(VCE= 30 Vdc, IB= 0)<br>2N4919<br>(VCE= 40 Vdc, IB= 0)<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.5<br>0.5<br>0.5<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc, TC= 125�C<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>0.1<br>0.5<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.1<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>1.0<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 4)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>30<br>10<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>150<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.6<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.3<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 4)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.3<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SMALL−SIGNAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>3.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 100 kHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>100<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>ÎÎÎÎÎ<br>hfe<br>ÎÎ**Î**<br>25<br>ÎÎ**Î**<br>−<br>ÎÎ<br>−<br>4. Pulse Test: PW�300�s, Duty Cycle�2.0%|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**Symbol**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Min**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**Max**<br>ÎÎ<br>ÎÎ<br>**Unit**<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 4)<br>(IC= 0.1 Adc, IB= 0)<br>2N4918<br>2N4919<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>60<br>80<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4918<br>(VCE= 30 Vdc, IB= 0)<br>2N4919<br>(VCE= 40 Vdc, IB= 0)<br>2N4920<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.5<br>0.5<br>0.5<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Collector Cutoff Current<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc, TC= 125�C<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ICEX<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>0.1<br>0.5<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>ICBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.1<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>IEBO<br>ÎÎ**Î**<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>ÎÎ**Î**<br>1.0<br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 4)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>30<br>10<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>150<br>−<br>ÎÎ<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VCE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>0.6<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>VBE(sat)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ**Î**<br>**ÎÎÎ**<br>1.3<br>ÎÎ<br>**ÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 4)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>ÎÎÎÎÎ<br>VBE(on)<br>ÎÎ**Î**<br>−<br>ÎÎ**Î**<br>1.3<br>ÎÎ<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SMALL−SIGNAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)<br>ÎÎÎÎÎ<br>**ÎÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>3.0<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 100 kHz)<br>**ÎÎÎÎÎ**<br>Cob<br>**ÎÎÎ**<br>−<br>**ÎÎÎ**<br>100<br>**ÎÎ**<br>pF<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>ÎÎÎÎÎ<br>hfe<br>ÎÎ**Î**<br>25<br>ÎÎ**Î**<br>−<br>ÎÎ<br>−<br>4. Pulse Test: PW�300�s, Duty Cycle�2.0%| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br><br>|ÎÎÎ<br>**Symbol**<br><br><br>ÎÎÎ|Î<br><br>ÎÎ<br>**Min**<br>ÎÎ|ÎÎ<br>**Max**<br>ÎÎ|Î<br>**Unit**<br>Î| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage (Note 4)<br>(IC= 0.1 Adc, IB= 0)<br>2N4918<br>2N4919<br>2N4920<br><br>Î<br>Î<br>|ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>VCEO(sus)<br><br><br><br>|Î<br>Î<br>**Î**<br><br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎ**<br>40<br>60<br>80|ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>−<br>−|**Î**<br>**Î**<br><br><br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>Vdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 20 Vdc, IB= 0)<br>2N4918<br>(VCE= 30 Vdc, IB= 0)<br>2N4919<br>(VCE= 40 Vdc, IB= 0)<br>2N4920<br>Î<br>Î<br>|ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>ICEO<br><br><br>|Î<br>Î<br>**Î**<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>−|ÎÎ<br>ÎÎ<br>**ÎÎ**<br>0.5<br>0.5<br>0.5|**Î**<br>**Î**<br>**Î**<br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>mAdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Collector Cutoff Current<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc)<br>(VCE= Rated VCEO, VBE(off)= 1.5 Vdc, TC= 125�C<br>Î<br>Î<br><br><br>|ÎÎÎ<br>ÎÎÎ<br><br>ICEX<br><br><br><br><br><br>|Î<br>Î<br><br>ÎÎ**Î**<br>ÎÎ**Î**<br><br>−<br>−<br><br>|ÎÎ<br>ÎÎ<br><br>0.1<br>0.5<br><br>|**Î**<br>**Î**<br><br>ÎÎ<br>ÎÎ<br><br>mAdc<br><br>| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCB= Rated VCB, IE= 0)<br><br>|ÎÎÎ<br><br><br><br>ÎÎÎ<br>**ÎÎÎ**<br>ICBO<br><br>|Î<br>ÎÎ**Î**<br>Î<br>**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−|ÎÎ<br><br><br>ÎÎ<br>**ÎÎ**<br>0.1|ÎÎ<br><br>**Î**<br>ÎÎ<br>**ÎÎ**<br>mAdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 5.0 Vdc, IC= 0)<br>Î<br>|ÎÎÎ<br>ÎÎÎ<br>IEBO<br><br><br>ÎÎÎ|Î<br>Î<br>ÎÎ**Î**<br>ÎÎ<br>−<br>ÎÎ|ÎÎ<br>ÎÎ<br>1.0<br>ÎÎ|**Î**<br><br>ÎÎ<br>ÎÎ<br>mAdc<br>ÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS**<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain (Note 4)<br>(IC= 50 mAdc, VCE= 1.0 Vdc)<br>(IC= 500 mAdc, VCE= 1.0 Vdc)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br><br>Î<br>Î<br>|ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>hFE<br><br><br><br>|Î<br>Î<br>**Î**<br><br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>40<br>30<br>10|ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−<br>150<br>−|**Î**<br>**Î**<br><br><br>ÎÎ<br>ÎÎ<br>**ÎÎ**<br>−| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Collector−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>Î<br>|ÎÎÎ<br><br>VCE(sat)<br><br>|Î<br><br>ÎÎ**Î**<br><br>−|ÎÎ<br><br>0.6|**Î**<br><br>ÎÎ<br><br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Base−Emitter Saturation Voltage (Note 4)<br>(IC= 1.0 Adc, IB= 0.1 Adc)<br>Î<br>|**ÎÎÎ**<br><br><br><br>ÎÎÎ<br><br>VBE(sat)<br><br>|**Î**<br>**ÎÎ**<br>Î<br><br>ÎÎ**Î**<br><br>−|**ÎÎ**<br><br><br>ÎÎ<br><br>1.3|**Î**<br>**Î**<br><br>ÎÎ<br><br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage (Note 4)<br>(IC= 1.0 Adc, VCE= 1.0 Vdc)<br>|**ÎÎÎ**<br><br><br>ÎÎÎ<br>VBE(on)<br><br>ÎÎÎ|**Î**<br>**ÎÎÎ**<br>Î<br>ÎÎ**Î**<br>−<br>ÎÎÎ|**ÎÎ**<br><br>ÎÎ<br>1.3<br>ÎÎ|**Î**<br>**ÎÎ**<br>**Î**<br>ÎÎ<br>Vdc<br>ÎÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**ÎÎÎÎÎÎÎÎÎÎÎ<br>**SMALL−SIGNAL CHARACTERISTICS**<br>ÎÎÎÎÎ<br>ÎÎ**Î**<br>ÎÎ**Î**<br>ÎÎ||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 MHz)<br><br>|**ÎÎÎ**<br>fT<br><br>|**Î**<br><br>**ÎÎÎ**<br>3.0|**ÎÎ**<br>−|**Î**<br><br>**ÎÎ**<br>MHz| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Output Capacitance (VCB= 10 Vdc, IE= 0, f = 100 kHz)<br>|**ÎÎÎ**<br>Cob<br>|**Î**<br>**ÎÎÎ**<br>−|**ÎÎ**<br>100|**Î**<br>**ÎÎ**<br>pF| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>Small−Signal Current Gain (IC= 250 mAdc, VCE= 10 Vdc, f = 1.0 kHz)<br>|ÎÎÎ<br>hfe<br>|Î<br>ÎÎ**Î**<br>25|ÎÎ<br>−|**Î**<br>ÎÎ<br>−| ||4. Pulse Test: PW�300�s, Duty Cycle�2.0%||||| ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |2N4918|TO−225|500 Unit / Bulk| |2N4919|TO−225|500 Unit / Bulk| |2N4920|TO−225|500 Unit / Bulk| |2N4920G|TO−225<br>(Pb−Free)|500 Unit / Bulk| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com 2** **2N4918 − 2N4920 Series** **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150<br>TC, CASE TEMPERATURE (°C)<br>PD, POWER DISSIPATION (WATTS)<br>**----- End of picture text -----**<br> **Figure 1. Power Derating** **==> picture [481 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> VBE(off)<br>5.0<br>Vin 0 VCC 3.0 V CC = 30 V IC/IB = 10, UNLESS NOTED<br>APPROX RC 2.0 IC/IB = 20 TJ = 25°C°<br>TJ = 150 C<br>-11 V Vin SCOPE<br>t1 RB 1.0<br>Cjd�<<�Ceb 0.7 VCC = 30 V tr<br>t2 APPROX 9.0 V +�4.0 V 0.5 VCC = 60 V<br>0.3<br>RB and RC 0.2 td VCC = 60 V VBE(off) = 2.0 V<br>Vin 0 varied to<br>t1 < 15 ns obtain desired<br>APPROX-11 V t100 < t3 < 15 ns2 < 500 �s current levels 0.070.1 VVCCBE(off) = 30 V = 0<br>t3 DUTY CYCLE ≈ 2.0% 0.0510 20 30 50 70 100 200 300 500 700 1000<br>TURN-OFF PULSE<br>IC, COLLECTOR CURRENT (mA)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br> **Figure 2. Switching Time Equivalent Test Circuit** **Figure 3. Turn−On Time** **www.onsemi.com** **3** **2N4918 − 2N4920 Series** **==> picture [492 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.7<br>D = 0.5<br>0.5<br>0.3 0.2<br>0.2<br>0.1<br>0.1 0.05 � � JC JC ( = 4.16 t) = r(t) °C/W MAX �JC P(pk)<br>0.07 0.01 D CURVES APPLY FOR POWER<br>0.05 PULSE TRAIN SHOWN<br>t1<br>0.03 SINGLE PULSE READ TIME AT t 1 t2<br>0.02 TJ(pk) - TC = P(pk) �JC(t) DUTY CYCLE, D = t1/t2<br>0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000<br>t, TIME (ms)<br>Figure 4. Thermal Response<br>10 There are two limitations on the power handling ability of<br>a transistor: average junction temperature and second<br>1.0 ms 100 �s<br>5.0 5.0 ms breakdown. Safe operating area curves indicate IC − VCEC − VCE − VCECE<br>operation i.e., the transistor must not be subjected to greater<br>2.0 TJ = 150°C dissipation than the curves indicate.<br>dc The data of Figure 5 is based on TJ(pk) = 150�C; TC isJ(pk) = 150�C; TC is = 150�C; TC is�C; TC isC; TC isC is is<br>1.0 variable depending on conditions. Second breakdown pulse<br>SECOND BREAKDOWN LIMITED limits are valid for duty cycles to 10% provided TJ(pk)J(pk)<br>0.5 BONDING WIRE LIMITED � 150�C. At high case temperatures, thermal limitations 150�C. At high case temperatures, thermal limitations�C. At high case temperatures, thermal limitationsC. At high case temperatures, thermal limitations<br>THERMALLY LIMIT @ TC = 25°C will reduce the power that can be handled to values less than<br>0.2 PULSE CURVES APPLY BELOW the limitations imposed by second breakdown.<br>RATED VCEO<br>0.1<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>Figure 5. Active−Region Safe Operating Area<br>5.0 5.0<br>3.0 IC/IB = 20 3.0 IC/IB = 20 TTJJ = 25 = 150 ° C°C<br>2.0 2.0 VCC = 30 V<br>IB1 = IB2<br>1.0 IC/IB = 10 1.0<br>0.7 0.7<br>0.5 0.5<br>0.3 ts′ = ts - 1/8 tf 0.3 IC/IB = 10<br>0.2 TJ = 25°C 0.2<br>TJ = 150°C<br>0.1 IB1 = IB2 0.1<br>0.07 0.07<br>0.05 0.05<br>10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>IC, COLLECTOR CURRENT (AMP)<br>μ<br>μ<br>f, FALL TIME (��s)t<br>′<br>s , STORAGE TIME (��s)t<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCEC − VCE − VCECE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150�C; TC isJ(pk) = 150�C; TC is = 150�C; TC is�C; TC isC; TC isC is is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk)J(pk) � 150�C. At high case temperatures, thermal limitations 150�C. At high case temperatures, thermal limitations�C. At high case temperatures, thermal limitationsC. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 7. Fall Time** **Figure 6. Storage Time** **www.onsemi.com** **4** **2N4918 − 2N4920 Series** ## **TYPICAL DC CHARACTERISTICS** **==> picture [491 x 617] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1.0<br>700 VCE = 1.0 V<br>500 IC = 0.1 A 0.25 A 0.5 A 1.0 A<br>300 TJ = 150°C 0.8<br>200<br>0.6<br>25°C<br>100 TJ = 25°C<br>70 -�55°C 0.4<br>50<br>30<br>0.2<br>20<br>10 0<br>2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200<br>IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 8. Current Gain Figure 9. Collector Saturation Region<br>10 [8] 1.5<br>IC = 10 ICES VCE = 30 V<br>10 [7] 1.2 TJ = 25°C<br>10 [6] 0.9<br>IC ≈ ICES<br>VBE(sat) @ IC/IB = 10<br>10 [5] 0.6<br>IC = 2x ICES<br>VBE @ VCE = 2.0 V<br>ICES VALUES<br>10 [4] OBTAINED FROM 0.3<br>FIGURE 13<br>VCE(sat) @ IC/IB = 10<br>10 [3] 0<br>0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000<br>TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)<br>Figure 10. Effects of Base−Emitter Resistance Figure 11. “On” Voltage<br>10 [2] +�2.5<br>+�2.0 hFE�@�VCE� ��1.0�V<br>10 [1] *APPLIES FOR IC/IB < 2<br>+�1.5<br>T J = 150°C<br>10 [0] +�1.0 TJ = 100°C to 150°C<br>+�0.5 *�VC FOR VCE(sat)<br>10 [-1] 100°C 0 TJ = -�55°C to +100°C<br>-�0.5<br>10 [-�2] IC = ICES -�1.0<br>VCE = 30 V -�1.5<br>10 [4]<br>25°C -�2.0 �VB FOR VBE<br>10 [3] REVERSE FORWARD -�2.5<br>-�0.2 -�0.1 0 +�0.1 +�0.2 +�0.3 +�0.4 +�0.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000<br>VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>VOLTAGE (VOLTS)<br>RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)<br>C)°<br>μ<br>, COLLECTOR CURRENT (��A)<br>IC<br>TEMPERATURE COEFFICIENTS (mV/<br>**----- End of picture text -----**<br> **Figure 12. Collector Cut−Off Region** **Figure 13. Temperature Coefficients** **www.onsemi.com** **5** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [472 x 503] intentionally omitted <==** **----- Start of picture text -----**<br> TO−225<br>CASE 77−09<br>4 ISSUE AD<br>DATE 25 MAR 2015<br>1 3<br>2 3 2 1<br>FRONT VIEW BACK VIEW<br>SCALE 1:1<br>E NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A1 ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>Q A 3. NUMBER AND SHAPE OF LUGS OPTIONAL.<br>a<br>PIN 4 MILLIMETERS<br>BACKSIDE TAB DIM MIN MAX<br>A 2.40 3.00<br>A1 1.00 1.50<br>b 0.60 0.90<br>D b2 0.51 0.88<br>P c 0.39 0.63<br>D 10.60 11.10<br>E 7.40 7.80<br>1 2 3<br>a t e 2.04 2.54<br>L 14.50 16.63<br>Jt L1 1.27 2.54<br>P 2.90 3.30<br>L1 Q 3.80 4.20<br>GENERIC<br>L<br>MARKING DIAGRAM*<br>YWW<br>XX<br>XXXXXG<br>2X b2 Y = Year<br>WW = Work Week<br>2X e XXXXX = Device Code<br>b c G = Pb−Free Package<br>*This information is generic. Please refer to<br>FRONT VIEW SIDE VIEW<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. EMITTER PIN 1. CATHODE PIN 1. BASE PIN 1. ANODE 1 PIN 1. MT 1<br>2., 4. COLLECTOR 2., 4. ANODE 2., 4. COLLECTOR 2., 4. ANODE 2 2., 4. MT 2<br>3. BASE 3. GATE 3. EMITTER 3. GATE 3. GATE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10:<br>PIN 1. CATHODE PIN 1. MT 1 PIN 1. SOURCE PIN 1. GATE PIN 1. SOURCE<br>2., 4. GATE 2., 4. GATE 2., 4. GATE 2., 4. DRAIN 2., 4. DRAIN<br>3. ANODE 3. MT 2 3. DRAIN 3. SOURCE 3. GATE<br>**----- End of picture text -----**<br> DATE 25 MAR 2015 Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42049B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TO−225 PAGE 1 OF 1** ~~re~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 22, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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