2N4403TA

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## **Is Now** 

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## **2N4403 / MMBT4403 PNP General-Purpose Amplifier** 

## **Description** 

This device is designed for use as a general-purpose amplifier and switch for collector currents to 500 mA. 

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TO-92<br>E B C<br>**----- End of picture text -----**<br>


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C<br>E<br>SOT-23 B<br>Mark:2T<br>**----- End of picture text -----**<br>


**Figure 1. 2N4403 Device Package** 

**Figure 2. MMBT4403 Device Package** 

## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|
|---|---|---|---|
|2N4403BU|2N4403|TO-92 3L|Bulk|
|2N4403TF|2N4403|TO-92 3L|Tape and Reel|
|2N4403TFR|2N4403|TO-92 3L|Tape and Reel|
|2N4403TA|2N4403|TO-92 3L|Ammo|
|2N4403TAR|2N4403|TO-92 3L|Ammo|
|MMBT4403|2T|SOT-23 3L|Tape and Reel|



Publication Order Number: MMBT4403/D 

© 2001 Semiconductor Components Industries, LLC. October-2017, Rev. 2 

## **Absolute Maximum Ratings**[(1),(2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCEO|Collector-Emitter Voltage|-40|V|
|VCBO|Collector-Base Voltage|-40|V|
|VEBO|Emitter-Base Voltage|-5.0|V|
|IC|Collector Current - Continuous|-600|mA|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C|



## **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty cycle operations. 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**||**Unit**|
|||**2N4403**(3)|**MMBT4403**(4)||
|PD|Total Device Dissipation|625|350|mW|
||Derate Above 25°C|5.0|2.8|mW/°C|
|RθJC|Thermal Resistance, Junction to Case|83.3||°C/W|
|RθJA|Thermal Resistance, Junction to Ambient|200|357|°C/W|



## **Notes:** 

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 

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## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|**Off Characteristics**||||||
|V|Collector-Emitter Breakdown<br>|I = -10 mA I = 0|-40||V|
|(BR)CEO|Voltage(5)|C. ,B||||
|V(BR)CBO|Collector-Base Breakdown<br>Voltage|IC= -0.1 mA, IE= 0|-40||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage|IE= -0.1 mA, IC= 0|-5.0||V|
|IBL|Base Cut-Off Current|VCE= -35 V, VEB= -0.4 V||-0.1|μA|
|ICEX|Collector Cut-Off Current|VCE= -35 V, VEB= -0.4 V||-0.1|μA|
|**On Characteristics**||||||
|hFE|DC Current Gain|IC= -0.1 mA, VCE= -1.0 V|30|||
|||IC= -1.0 mA, VCE= -1.0 V|60|||
|||IC= -10 mA, VCE= -1.0 V|100|||
|||IC= -150 mA, VCE= -2.0 V(5)|100|300||
|||IC= -500 mA, VCE= -2.0 V(5)|20|||
|VCE(sat)|Collector-Emitter Saturation<br>Voltage(5)|IC= -150 mA, IB= -15 mA||-0.40|V|
|||IC= -500 mA, IB= -50 mA||-0.75||
|VBE(sat)|Base-Emitter Saturation Voltage|IC= -150 mA, IB= -15 mA(5)|-0.75|-0.95|V|
|||IC= -500 mA, IB= -50 mA||-1.30||
|**Small Signal Characteristics**||||||
|fT|Current Gain - Bandwidth Product|IC= -20 mA, VCE= -10 V,<br>f = 100 MHz|200||MHz|
|Ccb|Collector-Base Capacitance|VCB= -10 V, IE= 0,<br>f = 140 kHz||8.5|pF|
|Ceb|Emitter-Base Capacitance|VBE= -0.5 V, IC= 0,<br>f = 140 kHz||30|pF|
|hie|Input Impedance|IC= -1.0 mA, VCE= -10 V,<br>f = 1.0 kHz|1.5|15.0|kΩ|
|hre|Voltage Feedback Ratio|IC= -1.0 mA, VCE= -10 V,<br>f = 1.0 kHz|0.1|8.0|x10-4|
|hfe|Small-Signal Current Gain|IC= -1.0 mA, VCE= -10 V,<br>f = 1.0 kHz|60|500||
|hoe|Output Admittance|IC= -1.0 mA, VCE= -10 V,<br>f = 1.0 kHz|1|100|μmhos|
|**Switching Characteristics**||||||
|td|Delay Time|VCC= -30 V, IC= -150 mA,<br>IB1= -15 mA||15|ns|
|tr|Rise Time|||20|ns|
|ts|Storage Time|VCC= -30 V, IC= -150 mA,<br>||225|ns|
|||||||
|tf|Fall Time|IB1= IB2= -15 mA||30|ns|



## **Note:** 

5. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

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## **Typical Performance Characteristics** 

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0.5<br>β = 10<br>0.4<br>0.3<br>25 °C<br>0.2<br>0.1 125 °C°CC<br>- 40 °C°CC<br>0<br>1 10 100 500<br>I   - COLLECTOR CURRENT  (mA)CC<br>CESAT<br>V       - COLLECTOR EMITTER VOLTAGE (V)<br>**----- End of picture text -----**<br>


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500 0.5<br>V     = 5V CE β = 10<br>400 0.4<br>125 °C<br>300 0.3<br>25 °C<br>200 25 °C 0.2<br>100 - 40 °C 0.1 125 °C°CC<br>- 40 °C°CC<br>0 0<br>0.1 0.3 1 3 10 30 100 300 1 10 100 500<br>I   - COLLECTOR CURRENT  (mA)C I   - COLLECTOR CURRENT  (mA)CC<br>Figure 3. Typical Pulsed Current Gain vs.  Figure 4. Collector-Emitter Saturation Voltage vs.<br>Collector Current Collector Current<br>1<br>1<br>- 40 °C 0.8 - 40 °C<br>0.8<br>25 °C 0.6<br>0.6 25 °C<br>0.4 125 °C β = 10 0.4 125°C<br>0.2 0.2 V     = 5VCE<br>0 0<br>1 10 100 500 0.1 1 10 25<br>I   - COLLECTOR CURRENT  (mA)C I   - COLLECTOR CURRENT  (mA)C<br>Figure 5. Base-Emitter Saturation Voltage  Figure 6. Base-Emitter On Voltage vs.<br>vs. Collector Current Collector Current<br>100 20<br>V     = 35VCB<br>16<br>10<br>12<br>1 C      ib<br>8<br>0.1<br>4 C ob<br>0.01 0<br>25 50 75 100 125 0.1 1 10 50<br>T  - AMBIENT TEMPERATURE (  C)A ° REVERSE BIAS VOLTAGE (V)<br>BESAT<br>CESAT<br>BE(ON)<br>CBO<br>FE<br>h    - TYPICAL PULSED CURRENT GAIN<br>V       - COLLECTOR EMITTER VOLTAGE (V)<br>BASE EMITTER ON VOLTAGE (V)<br>V        - BASE EMITTER VOLTAGE (V)<br>V         -<br>CAPACITANCE (pF)<br>I      - COLLECTOR CURRENT (nA)<br>**----- End of picture text -----**<br>


**Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current** 

- **Figure 7. Collector Cut-Off Current vs. Ambient Temperature** 

**Figure 8. Input and Output Capacitance vs. Reverse Bias Voltage** 

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## **Typical Performance Characteristics** (Continued) 

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250 500<br>I    = I    =  B1 B2 10I c I    = I    =  B1 B2 10I c<br>200 400<br>V       cc = 15 V V       cc = 15 V<br>150 t     s 300<br>100 200<br>t r t f t      off<br>50 100<br>t d t on<br>0 0<br>10 100 1000 10 100 1000<br>I     - COLLECTOR CURRENT (mA)C I     - COLLECTOR CURRENT (mA)C<br>Figure 9. Switching Times vs. Collector Current Figure 10. Turn-On and Turn-Off Times vs.<br>Collector Current<br>50 1<br>20 SOT-223-223223<br>0.75 TO-92<br>10 t    r = 15 V<br>0.5<br>5 SOT-23<br>30 ns<br>0.25<br>2<br>60 ns<br>1<br>10 100 500 0<br>0 25 50 75 100 125 150<br>I     - COLLECTOR CURRENT (mA)C o<br>D<br>B1<br>TIME  (nS) TIME  (nS)<br>P   - POWER DISSIPATION (W)<br>I     - TURN 0N BASE CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 9. Switching Times vs. Collector Current** 

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1<br>SOT-223-223223<br>0.75 TO-92<br>0.5<br>SOT-23<br>0.25<br>0<br>0 25 50 75 100 125 150<br>TEMPERATURE  (  C)o<br>Figure 12. Power Dissipation vs.<br>Ambient Temperature<br>1.3<br> h re<br> h ie<br>1.2  h    and hre  oe   h fe<br> hoe<br>1.1<br>1<br> h ie<br>0.9 I   = -10mA C<br> h fe T   = 25 CA  o<br>0.8<br>-4 -8 -12 -16 -20<br>V    - COLLECTOR VOLTAGE (V)CE<br>D<br>CE<br>P   - POWER DISSIPATION (W)<br>CHAR. RELATIVE TO VALUES AT V   = -10V<br>**----- End of picture text -----**<br>


**Figure 11. Rise Time vs. Collector and Turn-On Base Currents** 

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5<br> h oe<br>2  h re<br> h fe<br>1<br>0.5  h ie<br>0.2 V     = -10 V CE<br>T   = 25 CA  o<br>0.1<br>_  1 _  2 _  5 _  10 _ 20 _  50<br>I   - COLLECTOR CURRENT (mA)C<br>C<br>CHAR. RELATIVE TO VALUES AT I  = -10mA<br>**----- End of picture text -----**<br>


**Figure 14. Common Emitter Characteristics** 

**Figure 13. Common Emitter Characteristics** 

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## **Typical Performance Characteristics** (Continued) 

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1.5<br>I   = -10mAC   h fe<br>1.4 V     = -10 VCE   h ie<br>1.3  h re<br>1.2  h oe<br>1.1  hoe<br>1<br>0.9  h re<br>0.8<br> h ie<br>0.7<br>0.6  h fe<br>0.5<br>-40 -20 0 20 40 60 80 100<br>T   - AMBIENT TEMPERATURE (  C)A o<br>A<br>CHAR. RELATIVE TO VALUES AT T  = 25 C<br>o<br>**----- End of picture text -----**<br>


**Figure 15. Common Emitter Characteristics** 

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## **Physical Dimensions** 

## TO-92 3L (Tape and Reel, Ammo) 

## **Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)** 

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## **Physical Dimensions** (Continued) 

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TO-92 3L (Bulk)<br>**----- End of picture text -----**<br>


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   D<br>**----- End of picture text -----**<br>


## **Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3)** 

_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconducto_ ~~_r_~~ _repres_ ~~_e_~~ _ntative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ 

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Physical Dimensions  (Continued)<br>SOT-23 3L<br>0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>A) REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25   MOLD FLASH AND TIE BAR EXTRUSIONS.<br>D) DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M - 1994.<br>0.20 MIN SEATING    E) DRAWING FILE NAME: MA03DREV10<br>(0.55) PLANE<br>SCALE: 2X<br>**----- End of picture text -----**<br>


**Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)** 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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