2N4403TA

Bipolar (BJT) Single Transistor, PNP, 40 V, 600 mA, 625 mW, TO-92, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:200MHz; Power Dissipation Pd:625mW; DC Collector Current:-600mA; DC Current Gain hFE:20hFE;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 625mW
Transistor Mounting: Through Hole
Transistor Polarity: PNP
Transition Frequency: 200MHz
Transistor Case Style: TO-92
DC Current Gain hFE Min: 20hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 600mA
Collector Emitter Voltage Max: 40V

Delivery and price
Units per pack	1000
Price	0.058 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026