2N4401NLBU

Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 625 mW, TO-92, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:250MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:20hFE; Transistor C
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 625mW
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 250MHz
Transistor Case Style: TO-92
DC Current Gain hFE Min: 20hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 600mA
Collector Emitter Voltage Max: 40V

Delivery and price
Units per pack	20000
Price	0.014 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026