2N4401BU

## **Is Now Part of** 

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**==> picture [64 x 7] intentionally omitted <==**

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## **2N4401 / MMBT4401 NPN General-Purpose Amplifier** 

## **Description** 

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. 

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py 4<br>TO-92 4<br>EB C<br>**----- End of picture text -----**<br>


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C<br>E<br>SOT-23 F B<br>Mark:2X<br>**----- End of picture text -----**<br>


**Figure 1. 2N4401 Device Package** 

**Figure 2. MMBT4401 Device Package** 

## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|
|---|---|---|---|
|2N4401BU|2N4401|TO-92 3L|Bulk|
|2N4401TF|2N4401|TO-92 3L|Tape and Reel|
|2N4401TFR|2N4401|TO-92 3L|Tape and Reel|
|2N4401TA|2N4401|TO-92 3L|Ammo|
|2N4401TAR|2N4401|TO-92 3L|Ammo|
|MMBT4401|2X|SOT-23 3L|Tape and Reel|



© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

## **Absolute Maximum Ratings**[(1),(2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Value Unit** VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 600 mA ~~ae~~ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ° C **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. **Max. Symbol Parameter Unit 2N4401**[(3)] **MMBT4401**[(4)] Total Device Dissipation 625 350 mW PD Derate Above 25 ° C 5.0 2.8 mW/ ° C R θ JC Thermal Resistance, Junction to Case 83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient 200 357 ° C/W **Notes:** 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. ~~==[SS]~~ 4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. 

© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at TA = 25°C unless otherwise noted.|Values are at TA = 25°C unless otherwise noted.A = 25°C unless otherwise noted.= 25°C unless otherwise noted.|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|V(BR)CEO|Collector-Emitter Breakdown<br>Voltage(5)|IC= 1.0 mA, IB= 0|40||V|
|V(BR)CBO|Collector-Base Breakdown<br>Voltage|IC= 0.1 mA, IE= 0|60||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage|IE= 0.1 mA, IC= 0|6.0||V|
|IBL|Base Cut-Off Current|VCE= 35 V, VEB= 0.4 V||0.1|μA|
|ICEX|Collector Cut-Off Current|VCE= 35 V, VEB= 0.4 V||0.1|μA|
|hFE|DC Current Gain(5)|IC= 0.1 mA, VCE= 1.0 V|20|||
|||IC= 1.0 mA, VCE= 1.0 V|40|||
|||IC= 10 mA, VCE= 1.0 V|80|||
|||IC= 150 mA, VCE= 1.0 V|100|300||
|||IC= 500 mA, VCE= 2.0 V|40|||
|VCE(sat)|Collector-Emitter Saturation<br>Voltage(5)|IC= 150 mA, IB= 15 mA||0.40|V|
|||IC= 500 mA, IB= 50 mA||0.75||
|VBE(sat)|Base-Emitter Saturation Voltage(5)|IC= 150 mA, IB= 15 mA|0.75|0.95|V|
|||IC= 500 mA, IB= 50 mA||1.20||
|fT|Current Gain - Bandwidth Product|IC= 20 mA, VCE= 10 V,<br>f = 100 MHz|250||MHz|
|Ccb|Collector-Base Capacitance|VCB= 5.0 V, IE= 0,<br>f = 140 kHz||6.5|pF|
|Ceb|Emitter-Base Capacitance|VBE= 0.5 V, IC= 0,<br>f = 140 kHz||30|pF|
|hie|Input Impedance|IC= 1.0 mA, VCE= 10 V,<br>f = 1.0 kHz|1.0|15.0|kΩ|
|hre|Voltage Feedback Ratio|IC= 1.0 mA, VCE= 10 V,<br>f = 1.0 kHz|0.1|8.0|x10-4|
|hfe|Small-Signal Current Gain|IC= 1.0 mA, VCE= 10 V,<br>f = 1.0 kHz|40|500||
|hoe|Output Admittance|IC= 1.0 mA, VCE= 10 V,<br>f = 1.0 kHz|1.0|30|μmhos|
|td|Delay Time|VCC= 30 V, VEB= 2 V,<br>IC= 150 mA, IB1= 15 mA||15|ns|
|tr|Rise Time|||20|ns|
|ts|Storage Time|VCC= 30 V, IC= 150 mA,<br>IB1= IB2= 15 mA||225|ns|
|tf|Fall Time|||30|ns|



## **Note:** 

5. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** 

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500 0.4<br>V     = 5V CE<br>400 aSor A Oty β = 10<br>0.3<br>a 125 °C j<br>300 |) |  /<br>a ee PT TT 125 °C |<br>0.2<br>200 aa 25 °C TN 25 °C ML|<br>100 PI 0.1 Ii<br>- 40 °C<br>in [|] eo -—SS We - 40 °C<br>0 A PT eh i<br>0.1 0.3 1 3 10 30 100 300 1 10 100 500<br>I   - COLLECTOR CURRENT  (mA)C I    - COLLECTOR CURRENT  (mA)C<br>Figure 3. Typical Pulsed Current Gain vs.  Figure 4. Collector-Emitter Saturation Voltage vs.<br>Collector Current Collector Current<br>1<br>1 β = 10 V      CE  = 5V<br>Ee rr<br>- 40 °C Hi TTT 0.8 - 40 °C CE<br>0.8 25 °C 25 °C<br>ere cenll a 2A ot Cn<br>Ee 125 °C 0.6 PT TEeee<br>0.6 eT ee | | 125 °C<br>a| || 0.4 PTeee<br>0.4<br>a ena<br>0.2<br>1 10 100 500 0.1 1 10 25<br>I    - COLLECTOR CURRENT  (mA)C I    - COLLECTOR CURRENT  (mA)C<br>Figure 5. Base-Emitter Saturation Voltage  Figure 6. Base-Emitter On Voltage vs.<br>vs. Collector Current Collector Current<br>500<br>SSS V     = 40V SS SS 20 SS TE f = 1 MHz<br>100 CB<br>= ee ee Hl<br>SSS SD<br>16<br>10<br>ee eee PC CTINSE TT<br>SS SS SS 12 PCIE NOT<br>1 4 ee a C   te<br>SS 8 RI<br>0.1<br>ee i<br>C ob<br>SS ee ee 4 PC<br>a SS a<br>I<br>25 50 75 100 125 150<br>T   - AMBIENT TEMPERATURE ( C)A ° 0.1 1 10 100<br>REVERSE BIAS VOLTAGE (V)<br>Figure 7. Collector Cut-Off Current vs.  Figure 8. Emitter Transition and Output Capacitance<br>Ambient Temperature vs. Reverse Bias Voltage<br>FE CESAT<br>BESAT<br>BE(ON)<br>h    - TYPICAL PULSED CURRENT GAIN<br>V         - COLLECTOR-EMITTER VOLTAGE (V)<br>V        - BASE-EMITTER VOLTAGE (V)<br>V         - BASE-EMITTER ON VOLTAGE (V)<br>CAPACITANCE (pF)<br>I      - COLLECTOR CURRENT (nA)CBO<br>**----- End of picture text -----**<br>


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Figure 4. Collector-Emitter Saturation Voltage vs.<br>Collector Current<br>**----- End of picture text -----**<br>


**Figure 8. Emitter Transition and Output Capacitance vs. Reverse Bias Voltage** 

© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

4 

## **Typical Performance Characteristics** (Continued) 

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400 400<br>I    = I    =  B1 B2 10I c 0 I    = I    =  B1 B2 10I c EE a<br>320 pS ee 320 pS<br>V      = 2 cc 5 V V       cc = 25 V<br>240 ChPR 240 ggae th<br>SS Co a<br>160 a 160 SS t     s<br>PE t     off a t r hs:<br>80 80 t f<br>= t on ST es<br>t d<br>= eit — ERP<br>0 HES 0 aS <=wl<br>10 100 1000 10 100 1000<br>I      - COLLECTOR CURRENT (mA)C I      - COLLECTOR CURRENT (mA)C<br>Figure 9. Turn-On and Turn-Off Times vs.                    Figure 10. Switching Times vs.Collector Current<br>Collector Current<br>8<br>1 V     = 10 VCE<br>T    = 25 CA  o<br>PSS eect<br>SOT-223 6<br>0.75 TO-92 NS Pt ra<br> hoe<br>0.5 COSREPNETPS ODEEE 4 Seeeaeaypitt aa<br>SOT-23 tt et<br>PLE  h re  tt<br>0.25  PWNEN IEE 2 Kp ee ee<br> h fe<br>FERRERS Ree rte<br> h ie<br>0 0 SRE 25 50  EEEERSN 75 100 125 150 0 I | eee4<br>TEMPERATURE  (  C)o 0 10 20 30 40 50 60<br>I   - COLLECTOR CURRENT (mA)C<br>Figure 11. Power Dissipation vs.  Figure 12. Common Emitter Characteristics<br>Ambient Temperature<br>2.4 1.3<br>2 V     = 10 VI   = 10 mAC CE  ee  hre   h ie  1.251.2 a T    = 25 CI   = 10 mACA  o TT  h fe<br>eee oe ee<br>1.6 |nea| | | | | |  hfe  s 1.151.1 TNek |.aeeeLora  h ie  aa<br>1.2 NCC Zee  hoe  1.05 —N\ies Ht<br>1<br>ee eee | | Nero | | |<br>0.8 0.95  h re<br>== aN eee<br>0.9<br>a -—_f ft Aa tg<br>0.4 0.85<br>0 aa 0.750.8 SEa es  hoe<br>0 20 40 60 80 100 0 5 10 15 20 25 30 35<br>T   - AMBIENT TEMPERATURE (  C)A o V    - COLLECTOR VOLTAGE (V)CE<br>C<br>D<br>o<br>A CE<br>TIME  (nS) TIME  (nS)<br>P   - POWER DISSIPATION (W)<br>CHAR. RELATIVE TO VALUES AT I  = 10mA<br>CHAR. RELATIVE TO VALUES AT T  = 25 C CHAR. RELATIVE TO VALUES AT V   = 10V<br>**----- End of picture text -----**<br>


**Figure 10. Switching Times vs.Collector Current** 

**Figure 13. Common Emitter Characteristics** 

**Figure 14. Common Emitter Characteristics** 

© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

5 

## **Physical Dimensions** 

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**Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type** 

© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

6 

## **Physical Dimensions** (Continued) 

**Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type** 

© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

7 

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Physical Dimensions  (Continued)<br>0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>or ate |<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>   A)  REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23    B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08    C)  DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25        MOLD FLASH AND TIE BAR EXTRUSIONS.<br>   D)  DIMENSIONING AND TOLERANCING PER<br>oO of        ASME Y14.5M - 1994.<br>0.20 MIN SEATING    E)  DRAWING FILE NAME: MA03DREV10<br>2 (0.55) PLANE<br>SCALE: 2X<br>Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE<br>**----- End of picture text -----**<br>


© 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 

www.fairchildsemi.com 

8 

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