2N4124BU

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2N4124 MMBT4124<br>C<br>E<br>TO-92<br>C B E SOT-23 B<br>Mark: ZC<br>**----- End of picture text -----**<br>


## **NPN General Purpose Amplifier** 

This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 

**Absolute Maximum Ratings*** TA = 25°C unless otherwise noted 

|**Absolute Maximum Ratings*gs*s***TA = 25°C unless otherwise noted||
|---|---|
|**Symbol**<br>**Parameter**|**Value**|
|Collector-Emitter Voltage|25|
|Collector-Base Voltage|30|
|Emitter-Base Voltage|5.0|
|Collector Current - Continuous|200|
|Operating and Storage Junction Temperature Range|-55 to +150|



- *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 

## **NOTES** : 

- **1)** These ratings are based on a maximum junction temperature of 150 degrees C. 

- **2)** These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 

**Thermal Characteristics** TA = 25°C unless otherwise noted 

|**Thermal Characteristics**TA = 25°C unless otherwise noted|TA = 25°C unless otherwise noted|TA = 25°C unless otherwise noted|
|---|---|---|
|**Symbol**<br>**Characteristic**|**Max**||
||**2N4124**|***MMBT4124**|
|Total Device Dissipation<br>Derate above 25°C|625<br>5.0|350<br>2.8|
|Thermal Resistance, Junction to Case|83.3||
|Thermal Resistance, Junction to Ambient|200|357|



- *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 

2N4124/MMBT4124, Rev A 

 2001 Fairchild Semiconductor Corporation 

## **NPN General Purpose Amplifier** (continued) 

|**Electrical Characteristics**TA = 25°C unless otherwise noted|**Electrical Characteristics**TA = 25°C unless otherwise noted|**Electrical Characteristics**TA = 25°C unless otherwise noted|**Electrical Characteristics**TA = 25°C unless otherwise noted|**Electrical Characteristics**TA = 25°C unless otherwise noted|**Electrical Characteristics**TA = 25°C unless otherwise noted|
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Max**|**Units**|
|OFF CHARACTERISTICS||||||
|V(BR)CEO|Collector-Emitter Breakdown Voltage|IC= 1.0 mA, IB= 0|25||V|
|V(BR)CBO|Collector-Base Breakdown Voltage|IC= 10µA, IE= 0|30||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage|IC= 10µA, IC= 0|5.0||V|
|ICBO|Collector Cutoff Current|VCB= 20 V, IE= 0||50|nA|
|IEBO|Emitter Cutoff Current|VEB= 3.0 V, IC= 0||50|nA|



|ON CHARACTERISTICS*|ON CHARACTERISTICS*|ON CHARACTERISTICS*|ON CHARACTERISTICS*|ON CHARACTERISTICS*|ON CHARACTERISTICS*|
|---|---|---|---|---|---|
|hFE|DC Current Gain|IC= 2.0 mA, VCE= 1.0 V<br>IC= 50 mA,VCE= 1.0 V|120<br>60|360||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= 50 mA, IB= 5.0 mA||0.3|V|
|VBE(sat)|Base-Emitter Saturation Voltage|IC= 50 mA, IB= 5.0 mA||0.95|V|



## SMALL SIGNAL CHARACTERISTICS 

|fT|Current Gain - Bandwidth Product|IC= 10 mA, VCE= 20 V,<br>f = 100 MHz|300||MHz|
|---|---|---|---|---|---|
|Cobo|Output Capacitance|VCB= 5.0 V, IE= 0,<br>f = 100 kHz||4.0|pF|
|Cibo|Input Capacitance|VBE= 0.5 V, IC= 0,<br>f = 1.0 kHz||8.0|pF|
|Ccb|Collector-Base Capcitance|VCB= 5.0 V, IE= 0,<br>f = 100 kHz||4.0|pF|
|hfe|Small-Signal Current Gain|VCE= 10 V, IC= 2.0 mA,<br>f = 1.0 kHz|120|480||
|NF|Noise Figure|IC= 100µA, VCE= 5.0 V,<br>RS=1.0kΩ,f=10 Hz to 15.7 kHz||5.0|dB|



***** Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 

## **NPN General Purpose Amplifier** 

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Typical Characteristics<br>**----- End of picture text -----**<br>


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Base-Emitter ON Voltage vs<br>Collector Current<br>1<br>V     = 5VCE<br>0.8<br>- 40 °C<br>25 °C<br>0.6<br>125 °C<br>0.4<br>0.2<br>0.1 1 10 100<br>I    - COLLECTOR CURRENT  (mA)C<br>BE(ON)<br>V       - BASE-EMITTER ON VOLTAGE (V)<br>**----- End of picture text -----**<br>


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NPN General Purpose Amplifier<br>(continued)<br>**----- End of picture text -----**<br>


## **Typical Characteristics** (continued) 

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Noise Figure vs Frequency Noise Figure vs Source Resistance<br>12 12<br>I     = 1.0 mAC V     = 5.0VCE I    = 1.0 mAC<br>10  R     = 200S Ω 10<br>I     = 50 C µ A I    = 5.0 mAC<br>8  R     = 1.0 kS Ω 8 I    = 50 C µ A<br>I     = 0.5 mAC<br>6  R     = 200S Ω 6<br>4 4 I    = 100 C µ A<br>2 2<br>I     = 100 C µ A, R     = 500 S Ω<br>0 0<br>0.1 1 10 100 0.1 1 10 100<br>f  - FREQUENCY (kHz) R     - SOURCE RESISTANCE (      )S k Ω<br>Current Gain and Phase Angle Power Dissipation vs<br>vs Frequency Ambient Temperature<br>50 0 1<br>45 h fe 20<br>40 40 SOT-223<br>0.75<br>35 60 TO-92<br>30 80<br>25 θ 100 0.5<br>20 120<br>SOT-23<br>15 140<br>10 V     = 40VCE 160 0.25<br>5 I    = 10 mAC 180<br>0<br>1 10 100 1000 0<br>f - FREQUENCY (MHz) 0 25 50 75 100 125 150<br>TEMPERATURE  (  C)o<br>Turn-On Time vs Collector Current Rise Time vs Collector Current<br>500 500<br>I    = I    =B1 B2 10I c V     = 40VCC I    = I    =B1 B2 10I c<br>40V<br>100 15V 100<br>T    = 25°CJ<br>t     r @ V     = 3.0VCC<br>T    = 125°CJ<br>2.0V<br>10 10<br>t     d @ V     = 0VCB<br>5 5<br>1 10 100 1 10 100<br>I      - COLLECTOR CURRENT (mA)C I      - COLLECTOR CURRENT (mA)C<br>D<br>r<br>NF  - NOISE FIGURE (dB) NF  - NOISE FIGURE (dB)<br>θ<br> - DEGREES<br>fe<br>h      - CURRENT GAIN (dB) P   - POWER DISSIPATION (W)<br>TIME  (nS)<br>t    - RISE TIME  (ns)<br>**----- End of picture text -----**<br>


## **NPN General Purpose Amplifier** (continued) 

**Typical Characteristics** (continued) 

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Storage Time vs Collector Current Fall Time vs Collector Current<br>500 500<br>T    = 25°CJ I    = I    =B1 B2 10I c T    = 125°CJ I    = I    =B1V     = 40VCC B2 10I c<br>100 100<br>T    = 125°CJ<br>T    = 25°CJ<br>10 10<br>5 5<br>1 10 100 1 10 100<br>I      - COLLECTOR CURRENT (mA)C I      - COLLECTOR CURRENT (mA)C<br>Current Gain Output Admittance<br>500 100<br>V     = 10 VCE  V     = 10 VCE<br> f = 1.0 kHz  f = 1.0 kHz<br>T    = 25 CA  o T    = 25 CA  o<br>100<br>10<br>10 1<br>0.1 1 10 0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C I   - COLLECTOR CURRENT (mA)C<br>Input Impedance Voltage Feedback Ratio<br>100 10<br>V     = 10 VCE  V     = 10 VCE<br> f = 1.0 kHz  f = 1.0 kHz<br>T    = 25 CA  o 7 T    = 25 CA  o<br>10 5<br>4<br>3<br>1<br>2<br>0.1 1<br>0.1 1 10 0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C I   - COLLECTOR CURRENT (mA)C<br>fe<br>oe<br>4<br>_<br>ie<br>re<br>f<br>S<br>t    - FALL TIME  (ns)<br>t    - STORAGE TIME  (ns)<br>h    - CURRENT GAIN<br>h    - OUTPUT ADMITTANCE (  mhos)<br>h    - INPUT IMPEDANCE (k   )<br>h    - VOLTAGE FEEDBACK RATIO (x10    )<br>µ<br>Ω<br>**----- End of picture text -----**<br>


## **NPN General Purpose Amplifier** 

(continued) 

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Test Circuits<br>3.0 V<br>300 ns 275  Ω<br>10.6 V<br>Duty Cycle   =   2%<br>10 K Ω<br>0<br> - 0.5 V C1 < 4.0 pF<br>< 1.0 ns<br>**----- End of picture text -----**<br>


**FIGURE 1: Delay and Rise Time Equivalent Test Circuit** 

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3.0 V<br>10   < t1   < 500  µ s t1<br> 10.9 V 275  Ω<br>Duty Cycle   =   2%<br>0 10 K Ω<br>C1 < 4.0 pF<br> - 9.1 V 1N916<br>< 1.0 ns<br>**----- End of picture text -----**<br>


**FIGURE 2: Storage and Fall Time Equivalent Test Circuit** 

## **TRADEMARKS** 

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 

|ACEx™|FASTr™|PowerTrench<br>||SyncFET™|
|---|---|---|---|---|
|Bottomless™|GlobalOptoisolator™|QFET™||TinyLogic™|
|CoolFET™|GTO™|QS™||UHC™|
|_CROSSVOLT_™|HiSeC™|QT Optoelectronics™||VCX™|
|DOME™|ISOPLANAR™|Quiet Series™|||
|E2CMOSTM|MICROWIRE™|SILENT SWITCHER|||
|EnSignaTM|OPTOLOGIC™|SMART START™|||
|FACT™|OPTOPLANAR™|SuperSOT™-3|||
|FACT Quiet Series™|PACMAN™|SuperSOT™-6|||
|<br>FAST|POP™|SuperSOT™-8|||



## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 

1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative or<br>In Design|This datasheet contains the design specifications for<br>product development. Specifications may change in<br>any manner without notice.|
|Preliminary|First Production|This datasheet contains preliminary data, and<br>supplementary data will be published at a later date.<br>Fairchild Semiconductor reserves the right to make<br>changes at any time without notice in order to improve<br>design.|
|No Identification Needed|Full Production|This datasheet contains final specifications. Fairchild<br>Semiconductor reserves the right to make changes at<br>any time without notice in order to improve design.|
|Obsolete|Not In Production|This datasheet contains specifications on a product<br>that has been discontinued by Fairchild semiconductor.<br>The datasheet is printed for reference information only.|



Rev. G