2N3906BU

## **ON Semiconductor** 

## **Is Now** 

**==> picture [390 x 69] intentionally omitted <==**

**To learn more about onsemi™, please visit our website at www.onsemi.com** 

**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## **2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier** 

## **Description** 

This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 

**==> picture [229 x 95] intentionally omitted <==**

**----- Start of picture text -----**<br>
2N3906 MMBT3906<br>C<br>E<br>TO-92 SOT-23 B<br>EBC Mark:2A<br>**----- End of picture text -----**<br>


**==> picture [88 x 84] intentionally omitted <==**

**----- Start of picture text -----**<br>
PZT3906<br>C<br>E<br>C<br>SOT-223 B<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|**Pack Quantity**|
|---|---|---|---|---|
|2N3906BU|2N3906|TO-92 3L|Bulk|10000|
|2N3906TA|2N3906|TO-92 3L|Ammo|2000|
|2N3906TAR|2N3906|TO-92 3L|Ammo|2000|
|2N3906TF|2N3906|TO-92 3L|Tape and Reel|2000|
|2N3906TFR|2N3906|TO-92 3L|Tape and Reel|2000|
|MMBT3906|2A|SOT-23 3L|Tape and Reel|3000|
|PZT3906|3906|SOT-223 4L|Tape and Reel|2500|



© 2010 Semiconductor Components Industries, LLC. October-2017, Rev. 2 

Publication Order Number: 

PZT3906/D 

## **Absolute Maximum Ratings**[(1)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Smbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|**y**||||
|VCEO|Collector-Emitter Voltage|-40|V|
|VCBO|Collector-Base Voltage|-40|V|
|VEBO|Emitter-Base Voltage|-5.0|V|
|IC|Collector Current - Continuous|-200|mA|
|TJ, TSTG|Operating and Storage Junction Temperature Range|-55 to +150|°C|



## **Note:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

- These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Maximum**|**Maximum**|**Maximum**|**Unit**|
|---|---|---|---|---|---|
|||**2N3906**(3)|**MMBT3906**(2)|**PZT3906**(3)||
|PD|Total Device Dissipation|625|350|1,000|mW|
||Derate Above 25°C|5.0|2.8|8.0|mW/°C|
|RθJC|Thermal Resistance, Junction to Case|83.3|||°C/W|
|RθJA|Thermal Resistance, Junction to Ambient|200|357|125|°C/W|



## **Notes:** 

2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 

www.onsemi.com 

2 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|Values are at|TA= 25°C unless otherwise noted.|||||
|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|**OFF CHARACTERISTICS**||||||
||Collector-Emitter Breakdown|||||
|V(BR)CEO|Voltage(4)|IC= -1.0 mA, IB= 0|-40||V|
|V(BR)CBO|Collector-Base Breakdown Voltage|IC= -10μA, IE= 0|-40||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage|IE= -10μA, IC= 0|-5.0||V|
|IBL|Base Cut-Off Current|VCE= -30 V, VBE= 3.0 V||-50|nA|
|ICEX|Collector Cut-Off Current|VCE= -30 V, VBE= 3.0 V||-50|nA|
|**ON CHARACTERISTICS**||||||
|hFE|DC Current Gain(4)|IC= -0.1 mA, VCE= -1.0 V|60|||
|||IC= -1.0 mA, VCE= -1.0 V|80|||
|||IC= -10 mA, VCE= -1.0 V|100|300||
|||IC= -50 mA, VCE= -1.0 V|60|||
|||IC= -100 mA, VCE= -1.0V|30|||
|VCE(sat)|Collector-Emitter Saturation<br>Voltage|IC= -10 mA, IB= -1.0 mA||-0.25|V|
|||IC= -50 mA, IB= -5.0 mA||-0.40||
|VBE(sat)|Base-Emitter Saturation Voltage|IC= -10 mA, IB= -1.0 mA|-0.65|-0.85|V|
|||IC= -50 mA, IB= -5.0 mA||-0.95||
|**SMALL SIGNAL CHARACTERISTICS**||||||
|fT|Current Gain - Bandwidth Product|IC= -10 mA, VCE= -20 V,<br>f = 100 MHz|250||MHz|
|Cobo|Output Capacitance|VCB= -5.0 V, IE= 0,<br>f = 100 kHz||4.5|pF|
|Cibo|Input Capacitance|VEB= -0.5 V, IC= 0,<br>f = 100 kHz||10.0|pF|
|NF|Noise Figure|IC= -100μA, VCE= -5.0 V,<br>RS= 1.0 kΩ,<br>f = 10 Hz to 15.7 kHz||4.0|dB|
|**SWITCHING CHARACTERISTICS**||||||
|td|Delay Time|VCC= -3.0 V, VBE= -0.5 V<br>IC= -10 mA, IB1= -1.0 mA||35|ns|
|tr|Rise Time|||35|ns|
|ts|Storage Time|VCC= -3.0 V, IC= -10 mA,<br>IB1= IB2= -1.0 mA||225|ns|
|tf|Fall Time|||75|ns|



## **Note:** 

4. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

www.onsemi.com 

3 

## **Typical Performance Characteristics** 

**==> picture [432 x 147] intentionally omitted <==**

**----- Start of picture text -----**<br>
250 0.3<br>V      = 1.0VCE β = 10<br>125 °C 0.25<br>200<br>0.2<br>150 0.15 25 °C<br>25 °C<br>0.1<br>100  125°C<br>- 40 °C<br>0.05 - 40 °C<br>50 0<br>0.1 0.2 0.5 1 2 5 10 20 50 100 1 10 100 200<br>I   - COLLECTOR CURRENT  (mA)C I   - COLLECTOR CURRENT  (mA)C<br>FE CESAT<br>h    - TYPICAL PULSED CURRENT GAIN<br>V        - COLLECTOR EMITTER VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 1. Typical Pulsed Current Gain vs. Collector Current** 

**Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current** 

**==> picture [195 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 β = 10 - 40 °C<br>0.8<br>25 °C<br> 125 °C<br>0.6<br>0.4<br>0.2<br>0<br>1 10 100 200<br>I   - COLLECTOR CURRENT  (mA)C<br>BESAT<br>V        - BASE EMITTER VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 3. Base-Emitter Saturation Voltage vs. Collector Current** 

**==> picture [195 x 141] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>0.8<br>- 40  ° C<br>0.6 25 °C<br> 125 °C<br>0.4<br>V     = 1VCE<br>0.2<br>0<br>0.1 1 10 25<br>I   - COLLECTOR CURRENT  (mA)C<br>BE(ON)<br>V         - BASE EMITTER ON VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 4. Base-Emitter On Voltage vs. Collector Current** 

**==> picture [198 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>V    = 25V<br>CB<br>10<br>1<br>0.1<br>0.01<br>25 50 75 100 125<br>T  - AMBIENT TEMPERATURE (  C)A °<br>CBO<br>I      - COLLECTOR CURRENT (nA)<br>**----- End of picture text -----**<br>


**==> picture [195 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>C obo<br>8<br>6<br>4 C   ibo<br>2<br>0<br>0.1 1 10<br>REVERSE BIAS VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Collector Cut-Off Current vs. Ambient Temperature** 

**Figure 6. Common-Base Open Circuit Input and Output Capacitance vs. Reverse Bias Voltage** 

www.onsemi.com 

4 

## **Typical Performance Characteristics** (Continued) 

**==> picture [198 x 144] intentionally omitted <==**

**----- Start of picture text -----**<br>
6<br>V     = 5.0VCE<br>5<br>4<br>3 I     = 100 C μ A, R     = 200S Ω<br>2<br>I      C = 1.0 mA, R      S = 200 Ω<br>1<br>I      C = 100  μ A, R      S = 2.0 k Ω<br>0<br>0.1 1 10 100<br>f  - FREQUENCY (kHz)<br>NF  - NOISE FIGURE (dB)<br>**----- End of picture text -----**<br>


**Figure 7. Noise Figure vs. Frequency** 

**==> picture [199 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>100 t     s<br>t f<br>10<br>I    = I    = B1 B2 10 I c t r<br>t d<br>1<br>1 10 100<br>I      - COLLECTOR CURRENT C (mA)<br>TIME  (nS)<br>**----- End of picture text -----**<br>


**Figure 9. Switching Times vs. Collector Current** 

**==> picture [201 x 308] intentionally omitted <==**

**----- Start of picture text -----**<br>
12<br>V     = 5.0VCE<br>f = 1.0 kHz<br>10<br>8 I     C = 1.0 mA<br>6<br>4<br>I    = 100 C μ A<br>2<br>0<br>0.1 1 10 100<br>R     - SOURCE RESISTANCE (      )S k Ω<br>Figure 8. Noise Figure vs. Source Resistance<br>500<br>100 t     off<br>t      on I     = B1 10 I c t      on<br>10 V            BE(OFF) = 0.5V<br>t     off I    = I    = B1 B2 10 I c<br>1<br>1 10 100<br>I     - COLLECTOR CURRENT (mA)<br>NF  - NOISE FIGURE (dB)<br>TIME  (nS)<br>**----- End of picture text -----**<br>


**Figure 10. Turn-On and Turn-Off Times vs. Collector Current** 

**==> picture [199 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>SOT-223<br>0.75<br>TO-92<br>0.5<br>SOT-23<br>0.25<br>0<br>0 25 50 75 100 125 150<br>TEMPERATURE  (  C)o<br>D<br>P   - POWER DISSIPATION (W)<br>**----- End of picture text -----**<br>


**Figure 11. Power Dissipation vs. Ambient Temperature** 

www.onsemi.com 

5 

## **Typical Performance Characteristics** (Continued) 

**==> picture [435 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 10<br>V     = 10 VCE<br> f = 1.0 kHz<br>10 1<br>1 0.1<br>0.1 1 10 0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C I   - COLLECTOR CURRENT (mA)C<br>4<br>_<br>ie<br>re<br>h    - INPUT IMPEDANCE (k   )<br>h    - VOLTAGE FEEDBACK RATIO (x10    )<br>Ω<br>**----- End of picture text -----**<br>


**Figure 12. Voltage Feedback Ratio** 

**Figure 13. Input Impedance** 

**==> picture [198 x 161] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>V     = 10 V CE<br> f = 1.0 kHz<br>100<br>10<br>0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C<br>Figure 14. Output Admittance<br>oe<br>h    - OUTPUT ADMITTANCE (  mhos)<br>μ<br>**----- End of picture text -----**<br>


**==> picture [194 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>V     = 10 VCE<br> f = 1.0 kHz<br>500<br>200<br>100<br>50<br>20<br>10<br>0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C<br>fe<br>h    - CURRENT GAIN<br>**----- End of picture text -----**<br>


**Figure 15. Current Gain** 

www.onsemi.com 

6 

## **Physical Dimensions** 

## TO-92 (Bulk) 

**==> picture [157 x 103] intentionally omitted <==**

**==> picture [72 x 50] intentionally omitted <==**

**==> picture [8 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
   D<br>**----- End of picture text -----**<br>


**Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)** 

_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semico_ ~~_nd_~~ _uctor r_ ~~_e_~~ _presentative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ 

www.onsemi.com 

7 

## **Physical Dimensions** (Continued) 

## TO-92 (Ammo, Tape and Reel) 

**Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)** 

_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ 

www.onsemi.com 8 

**==> picture [398 x 497] intentionally omitted <==**

**----- Start of picture text -----**<br>
Physical Dimensions  (Continued)<br>SOT-23<br>0.95<br>2.92±0.20<br>3<br>1.40<br>1.30 [+0.20] 2.20<br>-0.15<br>1 2<br>(0.29) 0.60<br>0.37<br>0.95<br>0.20 A B 1.00<br>1.90 1.90<br>LAND PATTERN<br>RECOMMENDATION<br>1.20 MAX SEE DETAIL A<br>(0.93) 0.10<br>0.00<br>0.10 C<br>C<br>2.40±0.30<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>GAGE PLANE<br>A) REFERENCE JEDEC REGISTRATION<br>TO-236, VARIATION AB, ISSUE H.<br>0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS.<br>0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS,<br>0.25   MOLD FLASH AND TIE BAR EXTRUSIONS.<br>D) DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M - 1994.<br>0.20 MIN SEATING    E) DRAWING FILE NAME: MA03DREV10<br>(0.55) PLANE<br>SCALE: 2X<br>**----- End of picture text -----**<br>


**Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE** 

_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ 

www.onsemi.com 9 

## **Physical Dimensions** (Continued) 

**==> picture [98 x 15] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT-223 4 L<br>**----- End of picture text -----**<br>


## **Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD** 

_Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products._ 

www.onsemi.com 

10 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

## **LITERATURE FULFILLMENT** : 

Literature Distribution Center for ON Semiconductor 

**N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada 

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

❖ © Semiconductor Components Industries, LLC 

www.onsemi.com