2N3904TFR

## **Is Now Part of** 

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## **2N3904 / MMBT3904 / PZT3904 NPN General-Purpose Amplifier** 

## **Description** 

This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 

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2N3904 MMBT3904 PZT3904<br><— C<br>C<br>E<br>E<br>C<br>TO-92 SOT-23 B SOT-223 B<br>EBC Mark:1A<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|**Pack Quantity**|
|---|---|---|---|---|
|2N3904BU|2N3904|TO-92 3L|Bulk|10000|
|2N3904TA|2N3904|TO-92 3L|Ammo|2000|
|2N3904TAR|2N3904|TO-92 3L|Ammo|2000|
|2N3904TF|2N3904|TO-92 3L|Tape and Reel|2000|
|2N3904TFR|2N3904|TO-92 3L|Tape and Reel|2000|
|MMBT3904|1A|SOT-23 3L|Tape and Reel|3000|
|PZT3904|3904|SOT-223 4L|Tape and Reel|2500|



© 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 

www.fairchildsemi.com 

## **Absolute Maximum Ratings**[(1), (2)] 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Value Unit** VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA ~~=e~~ TJ, TSTG Operating and Storage Junction Temperature Range -55 to 150 ° C **Notes:** 

1. These ratings are based on a maximum junction temperature of 150 ° C. 

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. **Maximum Symbol Parameter Unit 2N3904 MMBT3904**[(3)] **PZT3904**[(4)] Total Device Dissipation 625 350 1,000 mW PD Derate Above 25 ° C 5.0 2.8 8.0 mW/ ° C R θ JC Thermal Resistance, Junction to Case 83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient 200 357 125 ° C/W ~~SSeS~~ **Notes:** 3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 

4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm[2] . 

© 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 

www.fairchildsemi.com 

2 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||
|V(BR)CEO|Collector-Emitter Breakdown Voltage|IC= 1.0 mA, IB= 0|40||V|
|V(BR)CBO|Collector-Base Breakdown Voltage|IC= 10μA, IE= 0|60||V|
|V(BR)EBO|Emitter-Base Breakdown Voltage|IE= 10μA, IC= 0|6.0||V|
|IBL|Base Cut-Off Current|VCE= 30 V, VEB= 3 V||50|nA|
|ICEX|Collector Cut-Off Current|VCE= 30 V, VEB= 3 V||50|nA|
|**ON CHARACTERISTICS**(5)||||||
|hFE|DC Current Gain|IC= 0.1 mA, VCE= 1.0 V|40|||
|||IC= 1.0 mA, VCE= 1.0 V|70|||
|||IC= 10 mA, VCE= 1.0 V|100|300||
|||IC= 50 mA, VCE= 1.0 V|60|||
|||IC=100 mA, VCE= 1.0V|30|||
|VCE(sat)|Collector-Emitter Saturation Voltage|IC= 10 mA, IB= 1.0 mA||0.2|V|
|||IC= 50 mA, IB= 5.0 mA||0.3||
|VBE(sat)|Base-Emitter Saturation Voltage|IC= 10 mA, IB= 1.0 mA|0.65|0.85|V|
|||IC= 50 mA, IB= 5.0 mA||0.95||
|**SMALL SIGNAL CHARACTERISTICS**||||||
|fT|Current Gain - Bandwidth Product|IC= 10 mA, VCE= 20 V,<br>f = 100 MHz|300||MHz|
|Cobo|Output Capacitance|VCB= 5.0 V, IE= 0,<br>f = 100 kHz||4.0|pF|
|Cibo|Input Capacitance|VEB= 0.5 V, IC= 0,<br>f = 100 kHz||8.0|pF|
|NF|Noise Figure|IC= 100μA, VCE= 5.0 V,<br>RS= 1.0 kΩ,<br>f = 10 Hz to 15.7 kHz||5.0|dB|
|**SWITCHING CHARACTERISTICS**||||||
|td|Delay Time|VCC= 3.0 V, VBE= 0.5 V<br>IC= 10 mA, IB1= 1.0 mA||35|ns|
|tr|Rise Time|||35|ns|
|ts|Storage Time|VCC= 3.0 V, IC= 10 mA,<br>IB1= IB2= 1.0 mA||200|ns|
|tf|Fall Time|||50|ns|



## **Note:** 

5. Pulse test: pulse width ≤ 300 μ s, duty cycle ≤ 2.0%. 

© 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 

www.fairchildsemi.com 

3 

## **Typical Performance Characteristics** 

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500<br>400 meesSSS 125 °C V     = 5V oo CE  0.15 PTTPANE β   = 10 FETTITTIE 125 °C  ETTTT yi<br>300<br>Ai 25  °C 0.1 CTCTT aATe<br>200 SSS NT | 25 °C<br>oa Al<br>100 - 40  ° C 0.05<br>ot oi SassCSSAll - 40 °C<br>0 ee aee |TT<br>0.1 1 10 100 0.1 1 10 100<br>I    - COLLECTOR CURRENT  (mA)C I    - COLLECTOR CURRENT  (mA)C<br>Figure 1. Typical Pulsed Current Gain vs. Collector  Figure 2. Collector-Emitter Saturation Voltage vs.<br>Current Collector Current<br>1<br>1 β   = 10 V      CE  = 5V<br>te Too<br>0.8<br>0.8 a - 40  ° C HLL a - 40 °C Cot 25 °C<br>eon 25 °C el 0.6 SerrA =<br>eet a oo Coe<br>0.6 125 °C<br>TM TIE 125 °C rT 0.4 | a al<br>ett PT OT<br>0.4 errEE ATllCO 0.2 TCCCT n C n<br>0.1 1 10 100 0.1 1 10 100<br>I    - COLLECTOR CURRENT  (mA)C I    - COLLECTOR CURRENT  (mA)C<br>Figure 3. Base-Emitter Saturation Voltage  Figure 4. Base-Emitter On Voltage vs.<br>vs. Collector Current Collector Current<br>500 10<br>——— — — EEE EHH f = 1.0 MHz th<br>100 V CB= 30V<br>SOa — EEEeeSSS]a LYeeee| TT fT [ET] eeTT<br>5<br>10<br>a 4 oh<br>3 C  ibo<br>1<br>===Se Sea 2 SSCAPIPE TTTT T<br>0.1 C obo<br>SSS an<br>25 SSE T   - AMBIENT TEMPERATURE ( C) 50 A 75 100 125 ° 150 L 10.1 AMM REVERSE BIAS VOLTAGE (V) 1 ul 10 100<br>Figure 5. Collector Cut-Off Current vs.  Figure 6. Capacitance vs. Reverse Bias Voltage<br>Ambient Temperature<br>CESAT<br>BESAT<br>FE<br>BE(ON)<br>h     - TYPICAL PULSED CURRENT GAIN<br>V       - COLLECTOR-EMITTER VOLTAGE (V)<br>V       - BASE-EMITTER VOLTAGE (V)<br>V       - BASE-EMITTER ON VOLTAGE (V)<br>CAPACITANCE (pF)<br>I     - COLLECTOR CURRENT (nA)CBO<br>**----- End of picture text -----**<br>


© 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 

www.fairchildsemi.com 

4 

## **Typical Performance Characteristics** (Continued) 

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12 12<br>I      C = 1.0 mA V     = 5.0V CE I    = 1.0 mA C<br>10 aN  R     = 200 S Ω ellSE 10 =noe AACaoZC<br>I     = 50  C μ A I    = 5.0 mA C<br>8 mm  R     = 1.0 k S Ω Coe Com 8 A A I    = 50  C μ A<br>=KIN I     = 0.5 mAC Core11 Coo ZCIWAT AZ ry<br>6 DPR Stiill  R     = 200S Ω 11 6 NO<br>RNS a<br>4 ROSSI Eo 4 RQSSCIIL_IZ I I    = 100 C μ A<br>eeCTT|| PSPSSSSI ZtT TTT mull<br>2 i=" 2 |<br>PA I     = 100 C μ A, R     = 500 S Ω |<br>0 PCr Ml 0 Ceie<br>0.1 1 10 100 0.1 1 10 100<br>f  - FREQUENCY (kHz) R     - SOURCE RESISTANCE (      )S k Ω<br>Figure 7. Noise Figure vs. Frequency Figure 8. Noise Figure vs. Source Resistance<br>1<br>50 0<br>5 NEE<br>45 PN h fe 20 LLIN SOT-223<br>40 40 0.75<br>35 Se L TT 60 TO-92<br>30 UNS. rH oa 80 EER<br>25 esTI Seo θ 100 0.5 FTSEOARETaN  ET<br>20 120 SOT-23<br>15 eSa_i 140 PENNEeeee<br>10 anu V      CE = 40V 160 0.25 SS<br>5 =n I     C = 10 mA COINS Co 180 ESSER<br>0 1 =n 10 ConCoN 100 SST 1000 0 0 ae 25 50 PP 75 100 ESN 125 SN 150<br>f - FREQUENCY (MHz) TEMPERATURE  (  C)o<br>Figure 9. Current Gain and Phase Angle vs.                Figure 10. Power Dissipation vs.<br>Frequency Ambient Temperature<br>500 P NUTT TT TT Tt TTT I    = I    = B1 TT B2 10 I c L] 500 [NTT TT TT TT V     = 40VCC TT I    = I    = B1 TT B2 10 I c []<br>SS 40V pt<br>100 SSN S R 15V UI 100 PPSSi T    = 25°CJ I<br>t      r @ V     = 3.0V CC T    = 125 J °C<br>PT NAINSENRONE TNT -—— 7 OS EEE<br>2.0V<br>10 SNBE SSSSS 10 eeail| N|<br>t d @ V     = CB 0V<br>5 =e ———---:: 5 SSS SSE Sea<br>1 10 100 1 10 100<br>I      - COLLECTOR CURRENT (mA)C I      - COLLECTOR CURRENT (mA)C<br>D<br>r<br>NF  - NOISE FIGURE (dB) NF  - NOISE FIGURE (dB)<br>θ<br> - DEGREES<br>fe<br>h      - CURRENT GAIN (dB) P   - POWER DISSIPATION (W)<br>TIME  (nS)<br>t    - RISE TIME  (ns)<br>**----- End of picture text -----**<br>


**Figure 8. Noise Figure vs. Source Resistance** 

**Figure 12. Rise Time vs. Collector Current** 

**Figure 11. Turn-On Time vs. Collector Current** 

© 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 

www.fairchildsemi.com 

5 

## **Typical Performance Characteristics** (Continued) 

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500 att T    = 25°CJ ee I    = I    = B1 B2 | 10 I c [| 500 CoDre fT ETT T    = 125J eee ° C eee I    = I    = B1V     = 40V eee CC B2 10 I c [| a<br>100 ———.oes T    = 125J °C | 100 EP T    = 25J ° C i<br>———a |_|.Es= —— —eeeeet<br>rT ee ee a<br> TET TT SEES comer<br>10 en ill 10 et<br>5 5<br>1 10 100 1 10 100<br>I      - COLLECTOR CURRENT (mA)C I      - COLLECTOR CURRENT (mA)C<br>Figure 13. Storage Time vs. Collector Current Figure 14. Fall Time vs. Collector Current<br>500 100<br>V     = 10 VCE  V     = 10 V CE<br> f = 1.0 kHz  f = 1.0 kHz<br>T    = 25 CA  o T    = 25 C A  o<br>ret Sot ad<br>100 | | | LLU Pe A<br>| ET TT 7 TT<br>10<br>ee ee eas eae<br>eet == Sea<br>a pr<br>10 Ei cit 1 oh<br>0.1 1 10 0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C I   - COLLECTOR CURRENT (mA)C<br>Figure 15. Current Gain Figure 16. Output Admittance<br>100 —S=_—S=S=S__----—— V     CE = 10 V ' 10 a ee eeeeee V     = 10 V CE<br> f = 1.0 kHz  f = 1.0 kHz<br>= T    = 25 C A  o 7 ee T    = 25 CA  o<br>SECT 5 PN<br>10<br>4<br>es<br>3<br>1 fFPSemesisI  masiillrH 2 PT N NUENJ LLL y y<br>0.1 a ee ee ee eee 1 i = ma<br>0.1 1 10 0.1 1 10<br>I   - COLLECTOR CURRENT (mA)C I   - COLLECTOR CURRENT (mA)C<br>Figure 17. Input Impedance Figure 18. Voltage Feedback Ratio<br>f<br>S<br>fe<br>oe<br>4<br>_<br>ie<br>re<br>t    - FALL TIME  (ns)<br>t    - STORAGE TIME  (ns)<br>h    - CURRENT GAIN<br>h    - OUTPUT ADMITTANCE (  mhos)<br>h    - INPUT IMPEDANCE (k   )<br>h    - VOLTAGE FEEDBACK RATIO (x10    )<br>μ<br>Ω<br>**----- End of picture text -----**<br>


© 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 

www.fairchildsemi.com 

6 

## **Test Circuits** 

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3.0 V<br>* 300 ns 275  Ω<br>10.6 V<br>Duty Cycle   =   2%<br>10 K Ω<br>0<br> - 0.5 V | T C1 < 4.0 pF<br>< 1.0 ns mt 4<br>Figure 19. Delay and Rise Time Equivalent Test Circuit<br>3.0 V<br>10   < t1   < 500  μ s > t1 i<—<br> 10.9 V 275  Ω<br>Duty Cycle   =   2%<br>0 10 K Ω<br>— L<br>C1 < 4.0 pF<br> - 9.1 V sooobet 1N916 4<br>a < 1.0 ns<br>**----- End of picture text -----**<br>


**Figure 20. Storage and Fall Time Equivalent Test Circuit** 

© 2002 Fairchild Semiconductor Corporation 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 

www.fairchildsemi.com 

7 

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6.70<br>B<br>6.20<br>0.10 C B<br>3.10<br>2.90 3.25<br>4<br>1.90<br>A<br>3.70<br>6.10<br>3.30<br>1.90<br>1 3<br>0.84<br>0.60<br>2.30<br>0.95 2.30<br>4.60<br>0.10 C B LAND PATTERN RECOMMENDATION<br>SEE DETAIL A<br>1.80 MAX<br>0.08 C 7.30<br>C 6.70<br>0.10<br>0.00<br>NOTES: UNLESS OTHERWISE SPECIFIED<br>   A)  DRAWING BASED ON JEDEC REGISTRATION<br>        TO-261C, VARIATION AA.<br>   B)  ALL DIMENSIONS ARE IN MILLIMETERS.<br>R0.15±0.05<br>10°    C) DIMENSIONS DO NOT INCLUDE BURRS<br>GAGE 5°        OR MOLD FLASH. MOLD FLASH OR BURRS<br>R0.15±0.05        DOES NOT EXCEED 0.10MM.<br>PLANE<br>   D) DIMENSIONING AND TOLERANCING PER<br>        ASME Y14.5M-2009.<br>10° 0.35    E)  LANDPATTERN NAME: SOT230P700X180-4BN<br>0° [ TYP] 0.20    F)  DRAWING FILENAME: MKT-MA04AREV3<br>0.25 10°<br>5° 0.60 MIN<br>SEATING<br>1.70<br>PLANE<br>DETAIL A<br>SCALE: 2:1<br>**----- End of picture text -----**<br>


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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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