2N3904BU

## NPN General - Purpose Amplifier 

## 2N3904 

## **Description** 

|NPN General - Purpose<br>Amplifier<br>2N3904<br>**Description**|@|
|---|---|
|This device is designed as a general−purpose amplifier and switch.||
|The useful dynamic range extends to 100 mA as a switch and to|**www.**<br>**onsemi.com**|
|100 MHz as an amplifier.||
|**MAXIMUM RATINGS**<br>(Values are at TA= 25°C unless otherwise noted.) (Note 1, Note 2)<br>**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>VCEO<br>Collector−Emitter Voltage<br>40<br>V<br>VCBO<br>Collector−Base Voltage<br>60<br>V<br>VEBO<br>Emitter−Base Voltage<br>6.0<br>V<br>IC<br>Collector Current − Continuous<br>200<br>mA<br>TJ, TSTG<br>Operating and Storage Junction<br>Temperature Range<br>−55 to +150<br>°C<br>1 23<br>1 2<br>3<br>**TO−92 3**<br>**CASE 135AN**<br>**TO−92 3**<br>**LEADFORMED**<br>**CASE 135AR**<br>~~===~~||
|Stresses exceeding those listed in the Maximum Ratings table may damage the||
|device. If any of these limits are exceeded, device functionality should not be||
|assumed, damage may occur and reliability may be affected.<br>1. These ratings are based on a maximum junction temperature of 150°C.|**MARKING DIAGRAM**|
|2. These are steady−state limits. ON Semiconductor should be consulted on<br>applications involving pulsed orlow−duty cycle operations.<br>**THERMAL CHARACTERISTICS**<br>(Values are at TA= 25°C unless otherwise noted.)<br>**Symbol**<br>**Parameter**<br>**Max**<br>**Unit**<br>PD<br>Total Device Dissipation<br>625<br>mW|1<br>2<br>3<br>A/2N<br>3904<br>YWW<br>1: Emitter<br>2: Base<br>3: Collector<br>~~:~~|
|Derate Above 25°C<br>5.0<br>mW/°C||
|R JC<br>Thermal Resistance,<br>Junction to Case<br>83.3<br>°C/W|A<br>= Assembly Code<br>2N3904<br>= Device Code|
|R JA<br>Thermal Resistance,<br>200<br>°C/W|YWW<br>= Date Code|
|Junction to Ambient||



## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2002 **July, 2021 − Rev. 2** 

**2N3904/D** 

**2N3904** 

**ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted.) 

|**ELECTRICAL CHA**|**RACTERISTICS**(Values are at TA= 25°C unl|ess otherwise noted.)||||
|---|---|---|---|---|---|
|**Symbol**|**Parametr**|**Conditions**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|V(BR)CEO|Collector−Emitter Breakdown Voltage|IC= 1.0 mA, IB= 0|40|−|V|
|V(BR)CBO|Collector−Base Breakdown Voltage|IC= 10�A, IE= 0|60|−|V|
|V(BR)EBO|Emitter−Base Breakdown Voltage|IE= 10�A, IC= 0|6.0|−|V|
|IBL|Base Cutoff Current|VCE= 30 V, VEB= 3 V|−|50|nA|
|ICEX|Collector Cut−Off Current|VCE= 30 V, VEB= 3 V|−|50|nA|
|**ON CHARACTERISTICS**(Note 3)||||||
|hFE|DC Current Gain|IC= 0.1 mA, VCE= 1.0 V|40|−|−|
|||IC= 1.0 mA, VCE= 1.0 V|70|−||
|||IC= 10 mA, VCE= 1.0 V|100|300||
|||IC= 50 mA, VCE= 1.0 V|60|−||
|||IC= 100 mA, VCE= 1.0 V|30|−||
|VCE(sat)|Collector−Emitter Saturation Voltage|IC= 10 mA, IB= 1.0 mA|−|0.2|V|
|||IC= 50.0 mA, IB= 5.0 mA|−|0.3||
|VBE(sat)|Base−Emitter Saturation Voltage|IC= 10.0 mA, IB= 1.0 mA|0.65|0.85|V|
|||IC= 50.0 mA, IB= 5.0 mA|−|0.95||
|**SMALL−SIGNAL CHARACTERISTICS**||||||
|fT|Current−Gain − Bandwidth Product|IC= 10 mA, VCE= 20 V,<br>f = 100 MHz|300|−|MHz|
|Cobo|Output Capacitance|VCB= 5.0 V, IE= 0,<br>f = 100 kHz|−|4.0|pF|
|Cibo|Input Capacitance|VEB= 0.5 V, IC= 0,<br>f = 100 kHz|−|8.0|pF|
|NF|Noise Figure|IC= 100�A, VCE= 5.0 V,<br>RS= 1.0 k�,<br>f = 10 Hz to 15.7 kHz|−|5.0|dB|
|**SWITCHING CHARACTERISTICS**||||||
|td|Delay Time|VCC= 3.0 V, VBE= 0.5 V,<br>IC= 10 mA, IB1= 1.0 mA|−|35|ns|
|tr|Rise Time||−|35|ns|
|ts|Storage Time|VCC= 3.0 V, IC= 10 mA,<br>IB1= IB2= 1.0 mA|−|200|ns|
|tf|Fall Time||−|50|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width � 300 � s; Duty Cycle � 2%. 

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**2** 

**2N3904** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
500<br>VCE = 5 V<br>400<br>300<br>25 ° C<br>200<br>−40 ° C<br>100<br>0<br>0.1 1 10 100<br>IC, Collector Current (mA)<br>Figure 1. Typical Pulsed Current Gain<br>vs. Collector Current<br>�  = 10<br>1<br>0.8 −40 ° C<br>25 ° C<br>0.6<br>125 ° C<br>0.4<br>0.1 1 10 100<br>IC, Collector Current (mA)<br>Figure 3. Base−Emitter Saturation Voltage<br>vs. Collector Current<br>500<br>VCB = 30 V<br>100<br>10<br>1<br>0.1<br>25 50 75 100 125 150<br>TA, Ambient Temperature ( � C)<br>, Typical Pulsed Current Gain<br>FE<br>h<br>, Base−Emitter Voltage (V)<br>BE(sat)<br>V<br>, Collector Current (nA)<br>ICBO<br>**----- End of picture text -----**<br>


**Figure 5. Collector Cut−Off Current vs. Ambient Temperature** 

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**----- Start of picture text -----**<br>
�  = 10<br>0.15<br> 125 ° C<br>0.1<br>25 ° C<br>0.05<br>−40 ° C<br>0.1 1 10 100<br>IC, Collector Current (mA)<br>Figure 2. Collector−Emitter Saturation Voltage<br>vs. Collector Current<br>1<br>VCE = 5 V<br>−40 ° C<br>0.8<br>25 ° C<br>0.6<br>125 ° C<br>0.4<br>0.2<br>0.1 1 10 100<br>IC, Collector Current (mA)<br>Figure 4. Base−Emitter On Voltage<br>vs. Collector Current<br>10<br>f = 1.0 MHz<br>5<br>4<br>3 Cibo<br>2<br>Cobo<br>1<br>0.1 1 10 100<br>Reverse Bias Voltage (V)<br>, Collector−Emitter Voltage (V)<br>CE(sat)<br>V<br>, Base−Emitter On Voltage (V)<br>BE(ON)<br>V<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**Figure 2. Collector−Emitter Saturation Voltage vs. Collector Current** 

**Figure 6. Capacitance vs. Reverse Bias Voltage** 

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**3** 

**2N3904** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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**----- Start of picture text -----**<br>
12<br>IC = 1.0 mA VCE = 5 V<br>RS = 200  �<br>10<br>I C  = 50  � A<br>8 RS = 1.0 k �<br>IC = 0.5 mA<br>6 R S  = 200  �<br>4<br>2 I C  = 100  � A<br>RS = 500  �<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>NF, Noise Figure (dB)<br>**----- End of picture text -----**<br>


**Figure 7. Noise Figure vs. Frequency** 

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**----- Start of picture text -----**<br>
12<br>I C  = 1.0 mA<br>10<br>IC = 50  � A<br>I C  = 5.0 mA<br>8<br>6<br>4 IC = 100  � A<br>2<br>0<br>0.1 1 10 100<br>RS, Source Resistance (k � )<br>NF, Noise Figure (dB)<br>**----- End of picture text -----**<br>


**Figure 8. Noise Figure vs. Source Resistance** 

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**----- Start of picture text -----**<br>
50 0<br>45 hfe 20<br>40 40<br>35 60<br>�<br>30 80<br>25 100<br>20 120<br>15 140<br>VCE = 40 V<br>10 I C  = 10 mA 160<br>5 180<br>0<br>1 10 100 1000<br>f, Frequency (MHz)<br>Figure 9. Current Gain and Phase Angle<br>vs. Frequency<br>500<br>I B1  = I B2  = IC<br>10<br>40 V<br>100 15 V<br>t r @ V CC  = 3.0 V<br>2.0 V<br>10<br>td @ VCB = 0 V<br>5<br>1 10 100<br>IC, Collector Current (mA)<br>, Current Gain (dB)<br>fe<br>h<br>Time (ns)<br>**----- End of picture text -----**<br>


**Figure 11. Turn−On Time vs. Collector Current** 

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**----- Start of picture text -----**<br>
1<br>0.75<br>TO−92<br>0.5<br>0.25<br>0<br>0 25 50 75 100 125 150<br>Temperature ( � C)<br>Figure 10. Power Dissipation<br>vs. Ambient Temperature<br>500<br>V CC  = 40 V I B1  = I B2  = IC<br>10<br>100<br>TJ = 25 ° C<br>T J  = 125 ° C<br>10<br>5<br>1 10 100<br>IC, Collector Current (mA)<br>, Power Dissipation (W)<br>D<br>P<br>tr, Rise Time (ns)<br>**----- End of picture text -----**<br>


**Figure 12. Rise Time vs. Collector Current** 

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**4** 

**2N3904** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** (Continued) 

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**----- Start of picture text -----**<br>
500<br>I B1  = I B2  = IC<br>10<br>TJ = 25 ° C<br>100<br>TJ = 125 ° C<br>10<br>5<br>1 10 100<br>IC, Collector Current (mA)<br>, Storage Time (ns)<br>tS<br>**----- End of picture text -----**<br>


**Figure 13. Storage Time vs. Collector Current** 

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**----- Start of picture text -----**<br>
500<br>V CC  = 40 V I B1  = I B2  = IC<br>10<br>TJ = 125 ° C<br>100<br>TJ = 25 ° C<br>10<br>5<br>1 10 100<br>IC, Collector Current (mA)<br>, Fall Time (ns)tf<br>**----- End of picture text -----**<br>


**Figure 14. Fall Time vs. Collector Current** 

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**----- Start of picture text -----**<br>
500<br>VCE = 10 V<br>f = 1.0 kHz<br>TA = 25 ° C<br>100<br>10<br>0.1 1 10<br>IC, Collector Current (mA)<br>, Current Gain<br>fe<br>h<br>**----- End of picture text -----**<br>


**Figure 15. Current Gain** 

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**----- Start of picture text -----**<br>
100<br>VCE = 10 V<br>f = 1.0 kHz<br>TA = 25 ° C<br>10<br>1<br>0.1 1 10<br>IC, Collector Current (mA)<br>mhos)<br>�<br>, Output Admittance (<br>oe<br>h<br>**----- End of picture text -----**<br>


**Figure 16. Output Admittance** 

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**----- Start of picture text -----**<br>
100<br>VCE = 10 V<br>f = 1.0 kHz<br>T A  = 25 ° C<br>10<br>1<br>0.1<br>0.1 1 10<br>IC, Collector Current (mA)<br>) �<br>, Input Impedance (k<br>ie<br>h<br>**----- End of picture text -----**<br>


**Figure 17. Input Impedance** 

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**----- Start of picture text -----**<br>
10<br>VCE = 10 V<br>f = 1.0 kHz<br>7 TA = 25 ° C<br>5<br>4<br>3<br>2<br>1<br>0.1 1 10<br>IC, Collector Current (mA)<br>−4)<br> 10<br>�<br>, Voltage Feedback Ratio (<br>re<br>h<br>**----- End of picture text -----**<br>


**Figure 18. Voltage Feedback Ratio** 

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**5** 

**2N3904** 

## **TEST CIRCUITS** 

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**----- Start of picture text -----**<br>
+3 V<br>300 ns<br>10.6 V 275 �<br>Duty Cycle = 2%<br>10 k�<br>0<br>-�0.5 V<br>< 1.0 ns C1 < 4.0 pF<br>Figure 19. Delay and Rise Time Equivalent Test Circuit<br>3 V<br>10 < t1 < 500 �s t1<br>10.9 V<br>275 �<br>Duty Cycle = 2%<br>10 k�<br>0<br>1N916 C1 < 4.0 pF<br>-�9.1 V<br>< 1.0 ns<br>**----- End of picture text -----**<br>


**Figure 20. Storage and Fall Time Equivalent Test Circuit** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|2N3904BU|TO−92−3 LF<br>(Pb−Free)|10000 Units / Bulk Bag|
|2N3904TA|TO−92−3 LF<br>(Pb−Free)|2000 Units / Fan−Fold|
|2N3904TAR|TO−92−3 LF<br>(Pb−Free)|2000 Units / Fan−Fold|
|2N3904TF|TO−92−3 LF<br>(Pb−Free)|2000 Units / Tape & Reel|
|2N3904TFR|TO−92−3 LF<br>(Pb−Free)|2000 Units / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.825x4.76** CASE 135AN ISSUE O 

DATE 31 JUL 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13880G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.825X4.76 PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−92 3 4.83x4.76 LEADFORMED** CASE 135AR ISSUE O 

DATE 30 SEP 2016 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13879G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: TO−92 3 4.83X4.76 LEADFORMED PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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