2N3773

## S 46BLOOMFIEL FARRAN **D** , STREETNEW 

NEW JERSEY 07003 www.solidstateinc.com 

## COMPLEMENTARY SILICON POWER TRANSISTORS 

The 2N3773 and 2NG609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and dc to de converters or inverters. 

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NPN PNP<br>2N3773 2N6609<br>**----- End of picture text -----**<br>


## FEATURES: 

* High Power Dissipation 

Pp = 150W (T, = 28°C) 

* High OC Current Gain and Low Saturation Voltage hFE = 15-60 @1,=8A, Veg =4V Vegjsat) = 1.4 V (Max.) @ Ip =8A, 1p =0.8A 

## MAXIMUM RATINGS 

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Collector Current-Continuous 16 A<br>Peak (1) 30<br>Base Current-Continuous lp 4.0 A<br>Peak (1) lam 15<br>Total Power Dissipation @T,=25°C 150 Ww<br>Derate above 25°C 0.857 wrc<br>Operating and Storage Junction Ty .Tst¢ °C<br>Temperature Range ~65 to +200<br>THERMAL CHARACTERISTICS<br>200 FIGURE -1 POWER DERATING<br>ee a<br>Pr<br>Fo<br>3 rfp—P | ff ff<br>Fo |TS<br>241arEscpo | |te| | T | |<br>PootTE<br>eSLt | | Jt | tT RY<br>0 25 50 75 100 125 150 175 200<br>T., TEMPERATURE( C)<br>(1) Pulse Test: Pulse width =5 ms , Duty Cycle < 10%<br>**----- End of picture text -----**<br>


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16 AMPERE<br>COMPLEMENTARY SILICON<br>POWER TRANSISTORS<br>140 VOLTS<br>150 WATTS<br>**----- End of picture text -----**<br>


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heee2N3773 NPN/ 2N6609 PNP| ELECTRICAL CHARACTERISTICS ( T, = 25°C unless otherwse noted ) 

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OFF CHARACTERISTICS<br>Collector - Emitter Sustaining Voltage (1) Vv Vv<br>(1g = 200 mA, I, = 0) CEQ(SUSosus)<br>Collector Cutoff Current mA<br>(Veg = 120 V, 1, = 0) 10<br>Collector Cutoff Current mA<br>(Vog = 140 V, VeE(OFF) =15V)<br>Collector Cutoff Current loBo mA<br>(Veg= 140 V, Ip =0)<br>Emitter Cutoff Current mA<br>(Veg= 7.0 V, 1, =0) 5.0<br>ON CHARACTERISTICS (1)<br>DC Current Gain hFE<br>(Ig = 8.0A,Voe = 4.0 V)<br>(Ig = 164, Vo, = 4.0 V ;<br>Collector - Emitter Saturation Voltage VeE(sat) Vv<br>(1, =8.0A,I, =800 mA) 1.4<br>(Io = 16 A, I, =3.2A) 4.0<br>Base - Emitter On Voltage Vee(on) Vv<br>(Ig= 8.0A, Veg= 4.0V) 2.2<br>* Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0%<br>ACTIVE-REGION SAFE OPERATING AREA (SOA)<br>rv 2Lt PSN ETT 10 us There are two limitation on the power handling ability<br>& “TIT BSS. | PYG 40 us of a transistor:average junction temperature and second<br>ra_ (ESSSS Ssao - breakdown safe operating area curves indicate 1c-Vee<br>E 5=e eS aS 200 us limits of the transistor that must be observed for reliable<br>3 oa SSN Ims operation i.8., the transistor must not be subjected to<br>a 2 |_| mae | PEERTI 400 ms greater dissipation than curves indicate. .<br>e io TENS The data of SOA curve is base on Typg=200 °C;T. Is<br>7 0507=StSSS SSS Soom variablepulse limitsdependingare validon forconditions. duty cycles secondto 10%breakdownprovided<br>a Pr ee ee Tyeg$200°C, At high case temperatures, thermal limita -<br>Sez<br>__-- Bonding Wire Limit<br>9 O1k=_._ Thermal LimitedT,=25°C (SingleoTPulse)ToT tionless will than reduce the limitations the powerimposed by secondthat can be handiedbreakdown. to values<br>0.05-— ——_—_— Second Breakdown Limit eo ne ee<br>oo3_|i TT TTT | ee2 es ee ee<br>3 5 7 10 20 50 70 100 140 200 300<br>Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


* Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0% 

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## COLLECTOR SATURATION REGION 

## COLLECTOR SATURATION REGION 

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