2N3772..

## **Transistor, NPN TO-3** 

## **Description:** 

High power NPN silicon power transistors. 

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. 

## **Features:** 

- Forward biased second breakdown current capability IS/b = 2.5A DC at VCE = 60V DC 

- Pb-free packages 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Rating**|**Symbol**|**2N3772**|**Unit**|
|Collector-Emitter Voltage|VCEO|60|V DC|
|Collector-Emitter Voltage|VCEX|80||
|Collector-Base Voltage|VCB|100||
|Emitter-Base Voltage|VEB|7||
|Collector Current<br>- Continuous<br>- Peak|IC|20<br>30|A DC|
|Base Current<br>- Continuous<br>- Peak|IB|5<br>15||
|Total Device Dissipation at TC= 25°C<br>Derate above 25°C|PD|150<br>0.855|W<br>W/°C|
|Operating and Storage Junction Temperature Range|TJ,Tstg|-65 to +200|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|Rjc|1.17|°C/W|



Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 

1. Indicates JEDEC registered data. 

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## **Transistor, NPN TO-3** 

|**Electrical Characteristics(TC = 25°C unless otherwise noted)**|**Electrical Characteristics(TC = 25°C unless otherwise noted)**|**Electrical Characteristics(TC = 25°C unless otherwise noted)**|**Electrical Characteristics(TC = 25°C unless otherwise noted)**|**Electrical Characteristics(TC = 25°C unless otherwise noted)**|
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min.**|**Max.**|**Unit**|
|**OffCharacteristics**|||||
|Collector-Emitter Sustaining Voltage (Note 2 and 3)<br>(lC= 0.2 A DC, lB= 0)|VEO (sus)|60|-|V DC|
|Collector-Emitter Sustaining Voltage<br>(IC= 0.2A DC, VEB(off) = 1.5 V DC, RBE= 100Ω)|VCEX (sus)|80|-||
|Collector-Emitter Sustaining Voltage<br>(IC= 0.2A DC, RBE= 100Ω)|VCER (sus)|70|-||
|Collector Cut off Current (Note 2)<br>(VCE= 50V DC, IB= 0 )<br>(VCE= 25VDC, IB= 0 )|ICEO|-|10|mA DC<br>mA DC|
|Collector Cut off Current (Note 2)<br>(VCE= 100V DC VEB (off)= 1.5V DC)<br>(VCE= 45V DC, VEB (off)= 1.5V DC, Tc = 150°C|ICEV|-|5<br>10||
|Collector Cut off Current (Note 2)<br>(VCB = 100V DC, IE = 0)|ICBO|-|5||
|Emitter Cut off Current  (Note 2)<br>(VBE = 7V DC, IC = 0 )|IEBO|-|5||
|**OnCharacteristics(Note 2)**|||||
|DC Current Gain (Note 3)<br>(lC= 10A DC, VCE= 4V DC)<br>(lC= 20A DC, VCE= 4V DC)|hFE|15<br>5|60<br>-|-|
|Collector-Emitter Saturation Voltage<br>(lC= 10A DC, IB= 1A DC)<br>(lC= 20A DC, IB= 4A DC)|VCE (sat)|-|1.4<br>4|V DC|
|Base-Emitter on Voltage<br>(lC= 10A DC, VCE= 4V DC)<br>(lC= 8A DC, VCE= 4V DC)|VBE (on)|-|2.2||
|**DynamicCharacteristics(Note 2)**|||||
|Current-Gain - Bandwidth Product<br>(lC= 1A DC, VCE= 4V DC, ftest= 50kHz)|fT|0.2|-|MHz|
|Small-Signal Current Gain<br>(lC= 1A DC, VCE= 4V DC, f = 1kHz)|hfe|40|-|-|
|**SecondBreakdown**|||||
|Second Breakdown Energy with Base Forward Biased, t  = 1s (non-repetitive)<br>(VCE= 60V DC)|IS/b|2.5|-|A DC|



2. Indicates JEDEC registered data 

3. Pulse Test: 300μs, Rep. Rate 60cps 

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## **Transistor, NPN TO-3** 

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Power Derating<br>**----- End of picture text -----**<br>


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 Power Dissipation (Watts)<br>D,<br>P<br>**----- End of picture text -----**<br>


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TC, Case Temperature (°C)<br>**----- End of picture text -----**<br>


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t, Time (μs)<br>**----- End of picture text -----**<br>


**Turn-Off Time** 

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IC, Collector Current (Amperes)<br>**----- End of picture text -----**<br>


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## **DC Current Gain** 

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## **Collector Saturation Region** 

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## **Transistor, NPN TO-3** 

## **Thermal Response** 

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## **Active-Region Safe Operating Area** 

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, Collector Current (Amperes)<br>IC<br>**----- End of picture text -----**<br>


There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

Is based on JEDEC registered data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (pk) < 200°C. TJ (pk) may be calculated from the data of using data of and the pulse power limits of Figure 3, TJ (pk) will be found to be less than TJ (max) for pulse widths of 1ms and less. When using ON Semiconductor transistors, it is permissible to increase the 

pulse power limits until limited by TJ (max.) 

**VCE, Collector-Emitter Voltage (Volts)** 

**Turn-On Time** 

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t, Time (μs)<br>**----- End of picture text -----**<br>


RB and RC are varied to obtain desired current levels D1 must be fast recovery type, e.g.: 

1N5825 used above IB to 100mA 

MSD6100 used below IB to 100mA 

## **Switching Time Test Circuit** 

**IC, Collector Current (Amperes)** 

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## **Transistor, NPN TO-3** 

## **Dimensions** 

**(TO-3)** 

|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|1.55 (39.37) Reference||
|B|-|1.05 (26.67)|
|C|0.25 (6.35)|0.335 (8.51)|
|D|0.038 (0.97)|0.043 (1.09)|
|E|0.055 (1.4)|0.07 (1.77)|
|G|0.43 (10.92) BSC||
|H|0.215 (5.46) BSC||
|K|0.44 (11.18)|0.48 (12.19)|
|L|0.665 (16.89) BSC||
|N|-|0.83 (21.08)|
|Q|0.151 (3.84)|0.165 (4.19)|
|U|1.187 (30.15) BSC||
|V|0.131 (3.33)|0.188 (4.77)|



**Pin Configuration** Pin 1. Base 2.  Emitter Collector (Case) 

Dimensions : Inches (Millimetres) 

## **Part Number Table** 

|**Description**|**Part Number**|
|---|---|
|Transistor, NPN, TO-3|2N3772|



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