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2N3442G
Bipolar (BJT) Single Transistor, NPN, 140 V, 10 A, 117 W, TO-204AA, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 2Pins
- Product Range: 2NXXXX
- Power Dissipation: 117W
- DC Current Gain hFE: 7.5hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 80kHz
- Transistor Case Style: TO-204AA
- DC Current Gain hFE Min: 7.5hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 10A
- Collector Emitter Voltage Max: 140V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 2.44 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## 2N3442 ## High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. ## **http://onsemi.com** ## **Features** - Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min) - Excellent Second Breakdown Capability - Pb−Free Package is Available* **10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS − 117 WATTS** ## **MAXIMUM RATINGS** (Note 1) |**MAXIMUM RATINGS**(Note 1)|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector−Emitter Voltage<br>~~——~~|VCEO|140|Vdc| |Collector−Base Voltage<br>~~——~~|VCB|160|Vdc| |Emitter−Base Voltage<br>~~——~~|VEB<br>~~ee~~|7.0<br>~~ee~~|Vdc<br>~~ee~~| |Collector Current<br>− Continuous<br>− Peak<br>~~——~~<br>~~ee~~|IC<br>~~ee~~<br>~~ee~~<br>~~ee~~|10<br>15<br>~~ee~~<br>~~ee~~<br>~~eee~~|Adc<br>~~ee~~<br>~~ee~~<br>~~eee~~| |Base Current<br>− Continuous<br>− Peak<br>~~ee~~|IB<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|7.0<br>−<br> ~~ee~~<br>~~ee~~<br>~~eee~~<br>~~eee~~|Adc<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~eee~~| |Total Device Dissipation @ TC= 25 C<br>Derate above 25 C (Note 2)<br>~~ee~~|PD<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|117<br>0.67<br> ~~eee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~|W<br>W/ C<br>~~eee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~| |Operating and Storage Junction<br>Temperature Range<br>~~ee~~|TJ, Tstg<br>~~ee ~~<br>~~ee~~<br>~~ee~~|−65 to +200<br> ~~eee~~<br>~~ee~~<br>~~ee~~|C<br>~~eee~~<br>~~ee~~<br>~~ee~~| Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. This data guaranteed in addition to JEDEC registered data. **TO−204AA (TO−3) CASE 1−07 STYLE 1** ## **MARKING DIAGRAM** 2N3442G AYWW MEX 2N3442 = Device Code G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |2N3442|TO−204|100 Units / Tray| |2N3442G|TO−204<br>(Pb−Free)|100 Units / Tray| - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **2N3442/D** **1** © Semiconductor Components Industries, LLC, 2006 **February, 2006 − Rev. 11** **2N3442** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎÎ**<br>**Min**<br>**ÎÎ**<br>**Max**<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 200 mAdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>140<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>200<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>30<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>IEBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>7.5<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>70<br>−<br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 2.0 Adc)<br>**ÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(on)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.7<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, ftest= 40 kHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>80<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>kHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small−Signal Current Gain<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>hfe<br>ÎÎ**Î**<br>ÎÎ**Î**<br>12<br>Î**Î**<br>Î**Î**<br>72<br>ÎÎÎ<br>ÎÎÎ<br>−<br>3. Pulse Test: Pulse Width = 300�s, Duty Cycle�2.0%.<br>4. fT= |hfe|•ftest|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎÎ**<br>**Min**<br>**ÎÎ**<br>**Max**<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 200 mAdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>140<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>200<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>30<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>IEBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>7.5<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>70<br>−<br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 2.0 Adc)<br>**ÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(on)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.7<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, ftest= 40 kHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>80<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>kHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small−Signal Current Gain<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>hfe<br>ÎÎ**Î**<br>ÎÎ**Î**<br>12<br>Î**Î**<br>Î**Î**<br>72<br>ÎÎÎ<br>ÎÎÎ<br>−<br>3. Pulse Test: Pulse Width = 300�s, Duty Cycle�2.0%.<br>4. fT= |hfe|•ftest|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎÎ**<br>**Min**<br>**ÎÎ**<br>**Max**<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 200 mAdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>140<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>200<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>30<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>IEBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>7.5<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>70<br>−<br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 2.0 Adc)<br>**ÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(on)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.7<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, ftest= 40 kHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>80<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>kHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small−Signal Current Gain<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>hfe<br>ÎÎ**Î**<br>ÎÎ**Î**<br>12<br>Î**Î**<br>Î**Î**<br>72<br>ÎÎÎ<br>ÎÎÎ<br>−<br>3. Pulse Test: Pulse Width = 300�s, Duty Cycle�2.0%.<br>4. fT= |hfe|•ftest|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎÎ**<br>**Min**<br>**ÎÎ**<br>**Max**<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 200 mAdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>140<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>200<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>30<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>IEBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>7.5<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>70<br>−<br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 2.0 Adc)<br>**ÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(on)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.7<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, ftest= 40 kHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>80<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>kHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small−Signal Current Gain<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>hfe<br>ÎÎ**Î**<br>ÎÎ**Î**<br>12<br>Î**Î**<br>Î**Î**<br>72<br>ÎÎÎ<br>ÎÎÎ<br>−<br>3. Pulse Test: Pulse Width = 300�s, Duty Cycle�2.0%.<br>4. fT= |hfe|•ftest|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎÎ**<br>**Min**<br>**ÎÎ**<br>**Max**<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 200 mAdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>140<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>200<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>30<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>IEBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>7.5<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>70<br>−<br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 2.0 Adc)<br>**ÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(on)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.7<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, ftest= 40 kHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>80<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>kHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small−Signal Current Gain<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>hfe<br>ÎÎ**Î**<br>ÎÎ**Î**<br>12<br>Î**Î**<br>Î**Î**<br>72<br>ÎÎÎ<br>ÎÎÎ<br>−<br>3. Pulse Test: Pulse Width = 300�s, Duty Cycle�2.0%.<br>4. fT= |hfe|•ftest|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎÎ**<br>**Symbol**<br>**ÎÎÎ**<br>**Min**<br>**ÎÎ**<br>**Max**<br>**ÎÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 200 mAdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VCEO(sus)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>140<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, IB= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>200<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150�C)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>30<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>IEBO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.0<br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**(Note 3)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>DC Current Gain<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>hFE<br>ÎÎ**Î**<br>ÎÎ**Î**<br>**ÎÎÎ**<br>20<br>7.5<br>Î**Î**<br>Î**Î**<br>**ÎÎ**<br>70<br>−<br>ÎÎÎ<br>ÎÎÎ<br>**ÎÎÎ**<br>−<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 2.0 Adc)<br>**ÎÎÎÎ**<br>VCE(sat)<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎÎ**<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>VBE(on)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>5.7<br>ÎÎÎ<br>**ÎÎÎ**<br>Vdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, ftest= 40 kHz)<br>ÎÎÎ**Î**<br>**ÎÎÎÎ**<br>fT<br>ÎÎ**Î**<br>**ÎÎÎ**<br>80<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎÎ<br>**ÎÎÎ**<br>kHz<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>Small−Signal Current Gain<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>ÎÎÎ**Î**<br>ÎÎÎ**Î**<br>hfe<br>ÎÎ**Î**<br>ÎÎ**Î**<br>12<br>Î**Î**<br>Î**Î**<br>72<br>ÎÎÎ<br>ÎÎÎ<br>−<br>3. Pulse Test: Pulse Width = 300�s, Duty Cycle�2.0%.<br>4. fT= |hfe|•ftest| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**|**ÎÎÎ**<br>**Symbol**|**Î**<br>**ÎÎ**<br>**Min**|**Î**<br>**ÎÎ**<br>**Max**|**ÎÎÎ**<br>**Unit**| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**OFF CHARACTERISTICS**||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Sustaining Voltage<br>(IC= 200 mAdc, IB= 0)|ÎÎÎ<br>**ÎÎÎ**<br>VCEO(sus)|**Î**<br><br>ÎÎ<br>**ÎÎ**<br>140|**Î**<br>**Î**<br>Î**Î**<br>**ÎÎ**<br>−|ÎÎÎ<br>**ÎÎÎ**<br>Vdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Collector Cutoff Current<br>(VCE= 140 Vdc, IB= 0)|ÎÎÎ<br><br>ICEO|**Î**<br><br>ÎÎ<br><br>−|**Î**<br><br>Î**Î**<br><br>200|ÎÎÎ<br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 140 Vdc, VBE(off)= 1.5 Vdc, TC= 150�C)|**ÎÎÎ**<br><br><br>ÎÎÎ<br>**ÎÎÎ**<br>ICEX|**ÎÎ**<br>**Î**<br>**Î**<br>ÎÎ<br>**ÎÎ**<br>−<br>−|**Î**<br>**Î**<br>**Î**<br>Î**Î**<br>**ÎÎ**<br>5.0<br>30|**ÎÎÎ**<br><br><br>ÎÎÎ<br>**ÎÎÎ**<br>mAdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current<br>(VBE= 7.0 Vdc, IC= 0)|ÎÎÎ<br>**ÎÎÎ**<br>IEBO|**Î**<br><br>ÎÎ<br>**ÎÎ**<br>−|**Î**<br>**Î**<br>Î**Î**<br>**Î**<br>5.0|ÎÎÎ<br>**ÎÎÎ**<br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ON CHARACTERISTICS**(Note 3)||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>DC Current Gain<br>(IC= 3.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)|ÎÎÎ<br>ÎÎÎ<br><br>hFE|**Î**<br>**Î**<br><br>ÎÎ<br>ÎÎ<br><br>20<br>7.5|**Î**<br>**Î**<br><br>Î**Î**<br>Î**Î**<br><br>70<br>−|ÎÎÎ<br>ÎÎÎ<br><br>−| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector−Emitter Saturation Voltage<br>(IC= 10 Adc, IB= 2.0 Adc)|**ÎÎÎ**<br><br>**ÎÎÎ**<br>VCE(sat)|**Î**<br>**ÎÎ**<br>**Î**<br>**ÎÎ**<br>−|**Î**<br>**ÎÎ**<br>**Î**<br>**ÎÎ**<br>5.0|**ÎÎÎ**<br><br>**ÎÎÎ**<br>Vdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Base−Emitter On Voltage<br>(IC= 10 Adc, VCE= 4.0 Vdc)|ÎÎÎ<br>**ÎÎÎ**<br>VBE(on)|**Î**<br><br>ÎÎ<br>**ÎÎ**<br>−|**Î**<br>**Î**<br>Î**Î**<br>**Î**<br>5.7|ÎÎÎ<br>**ÎÎÎ**<br>Vdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Current−Gain − Bandwidth Product (Note 4)<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, ftest= 40 kHz)|ÎÎÎ<br><br>fT|**Î**<br><br>ÎÎ<br><br>80|**Î**<br><br>Î**Î**<br><br>−|ÎÎÎ<br><br>kHz| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br><br>Small−Signal Current Gain<br>(IC= 2.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)|**ÎÎÎ**<br><br><br>ÎÎÎ<br><br>hfe|**ÎÎ**<br>**Î**<br><br>ÎÎ<br><br>12|**Î**<br>**Î**<br>**Î**<br><br>Î**Î**<br><br>72|**ÎÎÎ**<br><br><br>ÎÎÎ<br><br>−| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>3. Pulse Test: Pulse Width = 300�s, Duty Cycle�2.0%.<br>4. fT= |hfe|•ftest|ÎÎÎ|**Î**<br>ÎÎ|**Î**<br>Î**Î**|ÎÎÎ| **==> picture [238 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 25 50 75 100 125 150 175 200<br>TC, CASE TEMPERATURE (°C)<br>/PD(MAX), POWER DISSIPATION (NORMALIZED)<br>PD<br>**----- End of picture text -----**<br> **Figure 1. Power Derating** **http://onsemi.com 2** **2N3442** ## **ACTIVE REGION SAFE OPERATING AREA INFORMATION** **==> picture [237 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>10 �s<br>10<br>7.0 dc<br>5.0<br>3.0 30 �s<br>2.0 50 �s<br>TJ = 200°C 100 �s<br>1.0 1.0 ms<br>0.7 CURRENT LIMIT 100 ms<br>0.5 THERMAL LIMIT @ TC = 25°C<br>SINGLE PULSE<br>0.3 SECOND BREAKDOWN LIMIT<br>0.2<br>2.0 3.0 5.0 7.0 10 20 30 50 70 100 200<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br> There are two limitations on the power−handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 200�C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. **Figure 2. 2N3442** **==> picture [235 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>TJ = 150°C VCE = 4.0 V<br>200<br>100 −�55 °C<br>25°C<br>60<br>40<br>20<br>10<br>6.0<br>4.0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN<br>**----- End of picture text -----**<br> **Figure 3. DC Current Gain** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>1.2 IC = 1.0 A 2.0 A 4.0 A 8.0 A<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>TJ = 25°C<br>0<br>2.0 5.0 10 20 50 100 200 500 1.0�k 2.0�k<br>IB, BASE CURRENT (mA)<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 4. Collector−Saturation Region** **http://onsemi.com** **3** **2N3442** ## **PACKAGE DIMENSIONS** **TO−204 (TO−3)** CASE 1−07 ISSUE Z **==> picture [169 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>N<br>= C<br>−T− SEATING<br>E PLANE<br>To D 2 PL K<br>0.13 (0.005) M T Q M Y [M]<br>U<br>−Y−<br>V L<br>2<br>SI<br>G B<br>H 1<br>−Q−<br>0.13 (0.005) M T Y M<br>**----- End of picture text -----**<br> NOTES: **==> picture [124 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>3. ALL RULES AND NOTES ASSOCIATED WITH<br>REFERENCED TO−204AA OUTLINE SHALL APPLY.<br>INCHES MILLIMETERS<br>— DIM MIN MAX MIN MAX<br>A 1.550 REF 39.37 REF<br>B −−− 1.050 −−− 26.67<br>C 0.250 0.335 6.35 8.51<br>D 0.038 0.043 0.97 1.09<br>E 0.055 0.070 1.40 1.77<br>G 0.430 BSC 10.92 BSC<br>H 0.215 BSC 5.46 BSC<br>———— K 0.440 0.480 11.18 12.19<br>L 0.665 BSC 16.89 BSC<br>N −−− 0.830 −−− 21.08<br>Q 0.151 0.165 3.84 4.19<br>=a== U 1.187 BSC 30.15 BSC<br>— V 0.131 0.188 3.33 4.77<br>STYLE 1:<br>PIN 1. BASE<br>2. EMITTER<br>CASE: COLLECTOR<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA **Phone** : 480−829−7710 or 800−344−3860 Toll Free USA/Canada **Fax** : 480−829−7709 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **ON Semiconductor Website** : http://onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **Order Literature** : http://www.onsemi.com/litorder **Japan** : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your **Phone** : 81−3−5773−3850 local Sales Representative. **http://onsemi.com** **2N3442/D** **4**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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