2N3442..

## **Transistor, NPN TO-3** 

## **Description:** 

High-power industrial transistor 

NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches 

## **Features:** 

- The 2N3442 is a Silicon power base transistor for high power audio, series pass power supplies, disk-head positioners and other linear application. These devices can also be used in power switching circuits such as converters or inverters 

- Higher safe operating area than 2N3442 at VCE >40V 

- Low saturation voltages 

- High power dissipation capability 

## **Maximum Ratings** 

|**Maximum Ratings**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Collector-Emitter Voltage|VCEO|140|V DC|
|CoIIector-Base Voltage|VCB|160||
|Emitter-Base Voltage|VEB|7||
|Collector Current -Continuous<br>-Peak|IC|10<br>15|A DC|
|Base Current -Continuous<br>-Peak|IB|7<br>-||
|Total Power Dissipation at TC= 25°C<br>Derate above 25°C(Note 2)|PD|117<br>0.67|W<br>W/°C|
|Operating and Storage Junction Temperature Range|TJ, TSTG|-65 to +200|°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max.**|**Unit**|
|Thermal Resistance Junction to Case|Rθjc|1.17|°C/W|



Max. ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

1. Indicates JEDEC registered data. 

2. This data guaranteed in addition to JEDEC registered data. 

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**Transistor, NPN TO-3** 

**Electrical Characteristics (TC = 25°C unless  otherwise noted) Characteristic Symbol Min. Max. Unit** ~~a~~ **Off Characteristics** ~~a~~ Collector-Emitter Sustaining Voltage (lC = 200mA DC, lB = 0) VEO (sus) 140 - V DC Collector Cut off Current (VCE = 140V DC, IB = 0 ) ICEO - 200 Collector Cut off Current 5 (VCE = 140 V DC, VBE (off) = 1.5 V DC) ICEX - 30 mA DC (VCE = 140V DC, VBE (off) = 1.5V DC, TC = 150°C) Emitter Cut off Current ~~———ee~~ (VEB = 7V DC IC = 0 ) IEBO - 5 ~~ee ee~~ **On Characteristic (Note 3)** DC Current Gain 2 70 (lC = 3A DC, VCE = 4V DC) hFE 7.5 - - ~~ee~~ (lC = 10A DC, VCE = 4V DC) Collector-Emitter Saturation Voltage V ~~ee~~ - ~~e~~ 5 ~~e~~ (lC = 10A DC, IB = 2A DC) CE (sat) V DC Base-Emitter On Voltage V - 5.7 ~~pfee~~ (lC = 10A DC, VCE = 4V DC) ~~ee~~ BE (on) ~~ee~~ **Dynamic  Characteristics** ~~a a ee~~ Current-Gain - Bandwidth Product (Note 4)(lC = 2A DC, VCE = 4V DC, ftest = 40kHz) ~~ee~~ fT ~~ee~~ 80 ~~ee~~ - kHz Small-Signal Current Gain h 12 72 - ~~ee~~ (lC = 2A DC, VCE = 4V DC, f = 1kHz) ~~ee~~ fe ~~ee ee~~ **Note:** (3) Pulse Test : Pulse Width = 300μs, Duty Cycle ≤2% 

(4) fT = | hfe | • ftest 

**Power Derating** 

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## **Transistor, NPN TO-3** 

## **Active-Region Safe Operating Area Information** 

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 Collector Current (Amperes)<br>IC,<br>**----- End of picture text -----**<br>


There are two limitation on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. 

The data is based on TJ (PK) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 

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aaaa<br>7Thermalee  untimi  atT.= 26° AUms_ 171iSH<br>SecondSingle PulseBreakdown Limit DimiTTT] [TT] [|] second breakdown.<br>6.0 7.040 70063006860 7O100 0 «62oO0<br>VCE, Collector Emitter Voltage (Volts)<br>**----- End of picture text -----**<br>


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 DC Current Gain<br>FE,<br>h<br>**----- End of picture text -----**<br>


## **DC Current Gain** 

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IC, Collector Current (Amperes)<br>**----- End of picture text -----**<br>


## **Collector-Saturation Region** 

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## **Transistor, NPN TO-3** 

## **Dimensions:** 

## **(TO-3)** 

|**Dimensions**|**Min.**|**Max.**|
|---|---|---|
|A|1.55 (39.37) Reference||
|B|-|1.05 (26.67)|
|C|0.25 (6.35)|0.335 (8.51)|
|D|0.038 (0.97)|0.043 (1.09)|
|E|0.055 (1.4)|0.07 (1.77)|
|G|0.43 (10.92) BSC||
|H|0.215 (5.46) BSC||
|K|0.44 (11.18)|0.48 (12.19)|
|L|0.665 (16.89) BSC||
|N|-|0.83 (21.08)|
|Q|0.151 (3.84)|0.165 (4.19)|
|U|1.187 (30.15) BSC||
|V|0.131 (3.33)|0.188 (4.77)|



**Pin Configuration:** Pin 1. Base 2.  Emitter Collector (Case) 

Dimensions : Inches (Millimetres) 

## **Part Number Table** 

|**Description**|**Part Number**|
|---|---|
|Transistor, NPN, TO-3|2N3442|



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