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2N3055G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 15 A, 115 W, TO-204AA, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single Bipolar Junction Transistors - BJT
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:2.5MHz; Power Dissipation Pd:115W; DC Collector Current:15A; DC Current Gain hFE:20hFE; Transistor
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 115W
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transition Frequency: 2.5MHz
- Transistor Case Style: TO-204AA
- DC Current Gain hFE Min: 20hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.74 € |
| Current stock | 100+ |
| Lead time | 7 days |
Datasheet
## 2N3055(NPN), MJ2955(PNP) ## **Preferred Device** ## Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. ## **Features** **http://onsemi.com** - DC Current Gain − hFE = 20−70 @ IC = 4 Adc - Collector−Emitter Saturation Voltage − - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc - Excellent Safe Operating Area - Pb−Free Packages are Available* **15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 115 WATTS** **MAXIMUM RATINGS** **Rating Symbol Value Unit** Collector−Emitter Voltage VCEO 60 Vdc Collector−Emitter Voltage VCER 70 Vdc **TO−204AA (TO−3) CASE 1−07** Collector−Base Voltage VCB 100 Vdc **STYLE 1** Emitter−Base Voltage VEB 7 Vdc z Collector Current − Continuous IC 15 Adc Base Current IB 7 Adc Derate Above 25Total Power Dissipation @ T ° C C = 25 ° C PD 0.657115 W/W ° C **MARKING DIAGRAM** Operating and Storage Junction TJ, Tstg 65 to +200 ° C Temperature Range © Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not xxxx55G normal operating conditions) and are not valid simultaneously. If these limits are AYYWW exceeded, device functional operation is not implied, damage may occur and MEX reliability may be affected. ~~5~~ O- 160 140 Pf | | xxxx55 = Device Code xxxx = 2N30 or MJ20 120 eee G = Pb−Free Package A = Location Code 100 ee YY = Year 80 PotINee WWMEX = Work Week= Country of Orgin 60 ee i ee eee **ORDERING INFORMATION** 40 ee ee ee ee 20 Pot | | ER **Device Package** 2N3055 TO−204AA 0 0 25 50 75 100 125 150 175 200 2N3055G TO−204AA TC, CASE TEMPERATURE (°C) (Pb−Free) **Figure 1. Power Derating** |**Device**|**Package**|**Shipping**| |---|---|---| |2N3055|TO−204AA|100 Units / Tray| |2N3055G|TO−204AA|100 Units / Tray| ||(Pb−Free)|| |MJ2955|TO−204AA|100 Units / Tray| |MJ2955G|TO−204AA|100 Units / Tray| ||(Pb−Free)|| *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **Preferred** devices are recommended choices for future use and best overall value. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2005 **December, 2005 − Rev. 6** **2N3055/D** ## **2N3055(NPN), MJ2955(PNP)** |ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎ**<br>**Symbol**<br>**ÎÎÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎ**<br>1.52<br>**ÎÎ**<br>�C/W<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Characteristic**<br>ÎÎ**Î**<br>**Symbol**<br>ÎÎ**Î**<br>**Min**<br>Î**Î**<br>**Max**<br>ÎÎ<br>**Unit**<br>**OFF CHARACTERISTICS***<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, IB= 0)<br>VCEO(sus)<br>60<br>−<br>Vdc<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, RBE= 100�)<br>VCER(sus)<br>70<br>−<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 30 Vdc, IB= 0)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>0.7<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 7.0 Vdc, IC= 0)<br>**ÎÎÎ**<br>IEBO<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS*** (Note 1)<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>hFE<br>20<br>5.0<br>70<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)<br>VCE(sat)<br>−<br>1.1<br>3.0<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>1.5<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SECOND BREAKDOWN**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Second Breakdown Collector Current with Base Forward Biased<br>(VCE= 40 Vdc, t = 1.0 s, Nonrepetitive)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>Is/b<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.87<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎ**<br>fT<br>**ÎÎÎ**<br>2.5<br>**ÎÎ**<br>−<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>*Small−Signal Current Gain (IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>**ÎÎÎ**<br>hfe<br>**ÎÎÎ**<br>15<br>**ÎÎ**<br>120<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>*Small−Signal Current Gain Cutoff Frequency (VCE= 4.0 Vdc, IC= 1.0 Adc, f = 1.0 kHz)<br>ÎÎ**Î**<br>fhfe<br>ÎÎ**Î**<br>10<br>Î**Î**<br>−<br>ÎÎ<br>kHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎ**<br>**Symbol**<br>**ÎÎÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎ**<br>1.52<br>**ÎÎ**<br>�C/W<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Characteristic**<br>ÎÎ**Î**<br>**Symbol**<br>ÎÎ**Î**<br>**Min**<br>Î**Î**<br>**Max**<br>ÎÎ<br>**Unit**<br>**OFF CHARACTERISTICS***<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, IB= 0)<br>VCEO(sus)<br>60<br>−<br>Vdc<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, RBE= 100�)<br>VCER(sus)<br>70<br>−<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 30 Vdc, IB= 0)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>0.7<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 7.0 Vdc, IC= 0)<br>**ÎÎÎ**<br>IEBO<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS*** (Note 1)<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>hFE<br>20<br>5.0<br>70<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)<br>VCE(sat)<br>−<br>1.1<br>3.0<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>1.5<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SECOND BREAKDOWN**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Second Breakdown Collector Current with Base Forward Biased<br>(VCE= 40 Vdc, t = 1.0 s, Nonrepetitive)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>Is/b<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.87<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎ**<br>fT<br>**ÎÎÎ**<br>2.5<br>**ÎÎ**<br>−<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>*Small−Signal Current Gain (IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>**ÎÎÎ**<br>hfe<br>**ÎÎÎ**<br>15<br>**ÎÎ**<br>120<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>*Small−Signal Current Gain Cutoff Frequency (VCE= 4.0 Vdc, IC= 1.0 Adc, f = 1.0 kHz)<br>ÎÎ**Î**<br>fhfe<br>ÎÎ**Î**<br>10<br>Î**Î**<br>−<br>ÎÎ<br>kHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎ**<br>**Symbol**<br>**ÎÎÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎ**<br>1.52<br>**ÎÎ**<br>�C/W<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Characteristic**<br>ÎÎ**Î**<br>**Symbol**<br>ÎÎ**Î**<br>**Min**<br>Î**Î**<br>**Max**<br>ÎÎ<br>**Unit**<br>**OFF CHARACTERISTICS***<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, IB= 0)<br>VCEO(sus)<br>60<br>−<br>Vdc<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, RBE= 100�)<br>VCER(sus)<br>70<br>−<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 30 Vdc, IB= 0)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>0.7<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 7.0 Vdc, IC= 0)<br>**ÎÎÎ**<br>IEBO<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS*** (Note 1)<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>hFE<br>20<br>5.0<br>70<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)<br>VCE(sat)<br>−<br>1.1<br>3.0<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>1.5<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SECOND BREAKDOWN**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Second Breakdown Collector Current with Base Forward Biased<br>(VCE= 40 Vdc, t = 1.0 s, Nonrepetitive)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>Is/b<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.87<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎ**<br>fT<br>**ÎÎÎ**<br>2.5<br>**ÎÎ**<br>−<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>*Small−Signal Current Gain (IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>**ÎÎÎ**<br>hfe<br>**ÎÎÎ**<br>15<br>**ÎÎ**<br>120<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>*Small−Signal Current Gain Cutoff Frequency (VCE= 4.0 Vdc, IC= 1.0 Adc, f = 1.0 kHz)<br>ÎÎ**Î**<br>fhfe<br>ÎÎ**Î**<br>10<br>Î**Î**<br>−<br>ÎÎ<br>kHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎ**<br>**Symbol**<br>**ÎÎÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎ**<br>1.52<br>**ÎÎ**<br>�C/W<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Characteristic**<br>ÎÎ**Î**<br>**Symbol**<br>ÎÎ**Î**<br>**Min**<br>Î**Î**<br>**Max**<br>ÎÎ<br>**Unit**<br>**OFF CHARACTERISTICS***<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, IB= 0)<br>VCEO(sus)<br>60<br>−<br>Vdc<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, RBE= 100�)<br>VCER(sus)<br>70<br>−<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 30 Vdc, IB= 0)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>0.7<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 7.0 Vdc, IC= 0)<br>**ÎÎÎ**<br>IEBO<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS*** (Note 1)<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>hFE<br>20<br>5.0<br>70<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)<br>VCE(sat)<br>−<br>1.1<br>3.0<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>1.5<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SECOND BREAKDOWN**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Second Breakdown Collector Current with Base Forward Biased<br>(VCE= 40 Vdc, t = 1.0 s, Nonrepetitive)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>Is/b<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.87<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎ**<br>fT<br>**ÎÎÎ**<br>2.5<br>**ÎÎ**<br>−<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>*Small−Signal Current Gain (IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>**ÎÎÎ**<br>hfe<br>**ÎÎÎ**<br>15<br>**ÎÎ**<br>120<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>*Small−Signal Current Gain Cutoff Frequency (VCE= 4.0 Vdc, IC= 1.0 Adc, f = 1.0 kHz)<br>ÎÎ**Î**<br>fhfe<br>ÎÎ**Î**<br>10<br>Î**Î**<br>−<br>ÎÎ<br>kHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎ**<br>**Symbol**<br>**ÎÎÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎ**<br>1.52<br>**ÎÎ**<br>�C/W<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Characteristic**<br>ÎÎ**Î**<br>**Symbol**<br>ÎÎ**Î**<br>**Min**<br>Î**Î**<br>**Max**<br>ÎÎ<br>**Unit**<br>**OFF CHARACTERISTICS***<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, IB= 0)<br>VCEO(sus)<br>60<br>−<br>Vdc<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, RBE= 100�)<br>VCER(sus)<br>70<br>−<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 30 Vdc, IB= 0)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>0.7<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 7.0 Vdc, IC= 0)<br>**ÎÎÎ**<br>IEBO<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS*** (Note 1)<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>hFE<br>20<br>5.0<br>70<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)<br>VCE(sat)<br>−<br>1.1<br>3.0<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>1.5<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SECOND BREAKDOWN**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Second Breakdown Collector Current with Base Forward Biased<br>(VCE= 40 Vdc, t = 1.0 s, Nonrepetitive)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>Is/b<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.87<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎ**<br>fT<br>**ÎÎÎ**<br>2.5<br>**ÎÎ**<br>−<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>*Small−Signal Current Gain (IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>**ÎÎÎ**<br>hfe<br>**ÎÎÎ**<br>15<br>**ÎÎ**<br>120<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>*Small−Signal Current Gain Cutoff Frequency (VCE= 4.0 Vdc, IC= 1.0 Adc, f = 1.0 kHz)<br>ÎÎ**Î**<br>fhfe<br>ÎÎ**Î**<br>10<br>Î**Î**<br>−<br>ÎÎ<br>kHz|ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**THERMAL CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**Characteristic**<br>**ÎÎÎ**<br>**Symbol**<br>**ÎÎÎÎÎ**<br>**Max**<br>**ÎÎ**<br>**Unit**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Thermal Resistance, Junction−to−Case<br>**ÎÎÎ**<br>R�JC<br>**ÎÎÎÎÎ**<br>1.52<br>**ÎÎ**<br>�C/W<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**Characteristic**<br>ÎÎ**Î**<br>**Symbol**<br>ÎÎ**Î**<br>**Min**<br>Î**Î**<br>**Max**<br>ÎÎ<br>**Unit**<br>**OFF CHARACTERISTICS***<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, IB= 0)<br>VCEO(sus)<br>60<br>−<br>Vdc<br>Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, RBE= 100�)<br>VCER(sus)<br>70<br>−<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current (VCE= 30 Vdc, IB= 0)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEO<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>Î**Î**<br>**ÎÎ**<br>0.7<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Collector Cutoff Current<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>ICEX<br>ÎÎ**Î**<br>**ÎÎÎ**<br>−<br>−<br>Î**Î**<br>**ÎÎ**<br>1.0<br>5.0<br>ÎÎ<br>**ÎÎ**<br>mAdc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 7.0 Vdc, IC= 0)<br>**ÎÎÎ**<br>IEBO<br>**ÎÎÎ**<br>−<br>**ÎÎ**<br>5.0<br>**ÎÎ**<br>mAdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS*** (Note 1)<br>DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)<br>hFE<br>20<br>5.0<br>70<br>−<br>−<br>Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)<br>VCE(sat)<br>−<br>1.1<br>3.0<br>Vdc<br>Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>VBE(on)<br>−<br>1.5<br>Vdc<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SECOND BREAKDOWN**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Second Breakdown Collector Current with Base Forward Biased<br>(VCE= 40 Vdc, t = 1.0 s, Nonrepetitive)<br>ÎÎ**Î**<br>**ÎÎÎ**<br>Is/b<br>ÎÎ**Î**<br>**ÎÎÎ**<br>2.87<br>Î**Î**<br>**ÎÎ**<br>−<br>ÎÎ<br>**ÎÎ**<br>Adc<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 MHz)<br>**ÎÎÎ**<br>fT<br>**ÎÎÎ**<br>2.5<br>**ÎÎ**<br>−<br>**ÎÎ**<br>MHz<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>*Small−Signal Current Gain (IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)<br>**ÎÎÎ**<br>hfe<br>**ÎÎÎ**<br>15<br>**ÎÎ**<br>120<br>**ÎÎ**<br>−<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**Î**<br>*Small−Signal Current Gain Cutoff Frequency (VCE= 4.0 Vdc, IC= 1.0 Adc, f = 1.0 kHz)<br>ÎÎ**Î**<br>fhfe<br>ÎÎ**Î**<br>10<br>Î**Î**<br>−<br>ÎÎ<br>kHz| |---|---|---|---|---|---| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>**Characteristic**|**ÎÎÎÎ**<br><br><br>**Symbol**|**ÎÎÎÎ**<br><br><br>**Max**||**ÎÎ**<br><br><br>**Unit**| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br><br>Thermal Resistance, Junction−to−Case|**Î**<br>**ÎÎÎ**<br><br><br>R�JC|**ÎÎÎÎ**<br><br><br>1.52||**ÎÎ**<br><br><br>�C/W| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**|**Î**<br>**ÎÎÎ**|**ÎÎÎÎ**||**ÎÎ**| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ELECTRICAL CHARACTERISTICS**(TC= 25�C unless otherwise noted)||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**Characteristic**|**Î**<br>ÎÎ**Î**<br>**Symbol**|ÎÎ<br>**Min**|**Î**<br>Î<br>**Max**|ÎÎ<br>**Unit**| ||**OFF CHARACTERISTICS***||||| ||Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, IB= 0)|VCEO(sus)|60|−|Vdc| ||Collector−Emitter Sustaining Voltage (Note 1) (IC= 200 mAdc, RBE= 100�)<br>|VCER(sus)<br><br>|70<br><br>|−<br><br>|Vdc<br><br>| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Collector Cutoff Current (VCE= 30 Vdc, IB= 0)|**Î**<br><br>ÎÎ**Î**<br><br>ICEO|ÎÎ<br><br>−|**Î**<br><br>Î**Î**<br><br>0.7|ÎÎ<br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Collector Cutoff Current<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc)<br>(VCE= 100 Vdc, VBE(off)= 1.5 Vdc, TC= 150°C)|**Î**<br>**ÎÎÎ**<br>**Î**<br><br>ÎÎ**Î**<br><br>ICEX|**ÎÎ**<br><br><br>ÎÎ<br><br>−<br>−|**Î**<br>**Î**<br>**Î**<br><br>Î**Î**<br><br>1.0<br>5.0|**ÎÎ**<br><br><br>ÎÎ<br><br>mAdc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Emitter Cutoff Current (VBE= 7.0 Vdc, IC= 0)|**ÎÎ**<br>**Î**<br>**ÎÎÎ**<br>IEBO|**ÎÎ**<br><br>**ÎÎ**<br>−|**Î**<br><br>**Î**<br>5.0|**ÎÎ**<br><br>**ÎÎ**<br>mAdc| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>**ON CHARACTERISTICS*** (Note 1)||||| ||DC Current Gain<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)|hFE|20<br>5.0|70<br>−|−| ||Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)|VCE(sat)|−|1.1<br>3.0|Vdc| ||Base−Emitter On Voltage (IC= 4.0 Adc, VCE= 4.0 Vdc)<br>ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ|VBE(on)<br>ÎÎÎÎ|−<br>ÎÎ|1.5<br>Î|Vdc<br>ÎÎ| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**SECOND BREAKDOWN**||||| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br><br>Second Breakdown Collector Current with Base Forward Biased<br>(VCE= 40 Vdc, t = 1.0 s, Nonrepetitive)|**Î**<br><br>ÎÎ**Î**<br><br>Is/b|ÎÎ<br><br>2.87|**Î**<br><br>Î**Î**<br><br>−|ÎÎ<br><br>Adc| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎÎ**<br>**ÎÎ**<br>**ÎÎ**<br>**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>**DYNAMIC CHARACTERISTICS**||||| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>Current Gain − Bandwidth Product (IC= 0.5 Adc, VCE= 10 Vdc, f = 1.0 MHz)|**Î**<br>**ÎÎÎ**<br>fT|**ÎÎ**<br>2.5|**Î**<br>**Î**<br>−|**ÎÎ**<br>MHz| ||**ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ**<br>*Small−Signal Current Gain (IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 kHz)|**Î**<br>**ÎÎÎ**<br>hfe|**ÎÎ**<br>15|**Î**<br>**Î**<br>120|**ÎÎ**<br>−| ||ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br>*Small−Signal Current Gain Cutoff Frequency (VCE= 4.0 Vdc, IC= 1.0 Adc, f = 1.0 kHz)|**Î**<br>ÎÎ**Î**<br>fhfe|ÎÎ<br>10|**Î**<br>Î**Î**<br>−|ÎÎ<br>kHz| *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2.0%. **==> picture [233 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>50 �s<br>10 dc<br>1 ms<br>6<br>4<br>500 �s<br>2 250 �s<br>1<br>0.6<br>BONDING WIRE LIMIT<br>0.4 THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE)<br>SECOND BREAKDOWN LIMIT<br>0.2<br>6 10 20 40 60<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br> There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. **Figure 2. Active Region Safe Operating Area** **http://onsemi.com 2** **2N3055(NPN), MJ2955(PNP)** **==> picture [489 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> 500 200<br>300 TJ = 150°C VCE = 4.0 V TJ = 150°C VCE = 4.0 V<br>200 100 25°C<br>25°C<br>100 70 −�55 °C<br>70 −�55 °C<br>50<br>50<br>30 30<br>20<br>20<br>10<br>7.0<br>5.0 10<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)<br>Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP)<br>2.0 2.0<br>TJ = 25°C TJ = 25°C<br>1.6 1.6<br>IC = 1.0 A 4.0 A 8.0 A IC = 1.0 A 4.0 A 8.0 A<br>1.2 1.2<br>0.8 0.8<br>0.4 0.4<br>0 0<br>5.0 10 20 50 100 200 500 1000 2000 5000 5.0 10 20 50 100 200 500 1000 2000 5000<br>IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)<br>Figure 5. Collector Saturation Region, Figure 6. Collector Saturation Region,<br>2N3055 (NPN) MJ2955 (PNP)<br>1.4 2.0<br>TJ = 25°C TJ = 25°C<br>1.2<br>1.6<br>1.0<br>1.2<br>0.8 VBE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10<br>VBE @ VCE = 4.0 V<br>0.6 VBE @ VCE = 4.0 V 0.8<br>0.4<br>0.4<br>0.2 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10<br>0 0<br>0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10<br>IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMP)<br>hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN<br>VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br> **Figure 7. “On” Voltages, 2N3055 (NPN)** **Figure 8. “On” Voltages, MJ2955 (PNP)** **http://onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **DATE 05/18/1988** ## **TO−204 (TO−3) CASE 1−07 ISSUE Z** ## **SCALE 1:1** **==> picture [388 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> A NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>N Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>, pe C 3. ALL RULES AND NOTES ASSOCIATED WITH<br>−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.<br>E PLANE<br>INCHES MILLIMETERS<br>an D 2 PL K — DIM MIN MAX — MIN MAX<br>0.13 (0.005) M T Q M Y [M] AB ---1.550 REF1.050 ---39.37 REF26.67<br>a C 0.250 0.335 e 6.35 8.51<br>U D 0.038 0.043 0.97 1.09<br>−Y− E 0.055 0.070 1.40 1.77<br>V L G 0.430 BSC 10.92 BSC<br>H 0.215 BSC 5.46 BSC<br>2 K 0.440 0.480 11.18 12.19<br>G B L 0.665 BSC 16.89 BSC<br>H 1 N --- 0.830 --- 21.08<br>Q 0.151 0.165 3.84 4.19<br>U 1.187 BSC 30.15 BSC<br>−Q− — V 0.131 0.188 3.33 4.77<br>0.13 (0.005) M T Y M<br>**----- End of picture text -----**<br> **==> picture [334 x 67] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. BASE PIN 1. GATE PIN 1. GROUND PIN 1. CATHODE<br>2. EMITTER 2. COLLECTOR 2. SOURCE 2. INPUT 2. EXTERNAL TRIP/DELAY<br>CASE: COLLECTOR CASE: EMITTER CASE: DRAIN CASE: OUTPUT CASE: ANODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE #1 PIN 1. ANODE #1<br>2. EMITTER 2. OPEN 2. CATHODE #2 2. ANODE #2<br>CASE: COLLECTOR CASE: CATHODE CASE: ANODE CASE: CATHODE<br>**----- End of picture text -----**<br> **ON Semiconductor** and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. Case Outline Number: **1** **1** © Semiconductor Components Industries, LLC, 2000 **January, 2000 − Rev. 07Z** **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at March 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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