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2N3055AG

Bipolar (BJT) Single Transistor, NPN, 60 V, 15 A, 115 W, TO-204, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single Bipolar Junction Transistors - BJT
  • Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:6MHz; Power Dissipation Pd:115W; DC Collector Current:15A; DC Current Gain hFE:2.5hFE; Trans
  • MSL: -
  • SVHC: No SVHC (25-Jun-2025)
  • No. of Pins: 2Pins
  • Product Range: -
  • Qualification: -
  • Power Dissipation: 115W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: NPN
  • Transition Frequency: 6MHz
  • Transistor Case Style: TO-204
  • DC Current Gain hFE Min: 2.5hFE
  • Operating Temperature Max: 200°C
  • Continuous Collector Current: 15A
  • Collector Emitter Voltage Max: 60V
Delivery and price
Units per pack 1000
Price 2.45 €
Current stock 185
Lead time 7 days
PDF File icon Datasheet

Updated at March 10, 2026