2N3055AG

## 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) 

## Complementary Silicon High-Power Transistors 

These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe operating area than the 2N3055. 

## **Features** 

## **http://onsemi.com** 

**15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS − 115, 180 WATTS** 

- High Current−Gain − Bandwidth 

**==> picture [483 x 354] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|•|Safe Operating Area|PNP|NPN|
|•|These Devices are Pb−Free and are RoHS Compliant*|CASE 3|CASE 3|
|MAXIMUM RATINGS|(Note 1)|BASE|BASE|
|1|1|
|Rating|Symbol|Value|Unit|
|Collector−Emitter Voltage|VCEO|Vdc|
|2N3055AG|60|EMITTER 2|EMITTER 2|
|MJ15015G, MJ15016G|120|
|Collector−Base Voltage|VCBO|Vdc|
|2N3055AG|100|CASE|
|MJ15015G, MJ15016G|200|
|A|Collector−Emitter Voltage Base|VCEV|Vdc|
|Reversed Biased|
|2N3055AG|100|2|
|MJ15015G, MJ15016G|200|1|
|Emitter−Base Voltage|VEBO|7.0|Vdc|TO−204 (TO−3)|
|CASE 1−07|
|ae|Collector Current − Continuous|IC|15|Adc|STYLE 1|
|Base Current|IB|7.0|Adc|
|Total Device Dissipation|PD|MARKING DIAGRAMS|
|@ TC = 25|C|
|2N3055AG|115|W|
|MJ15015G, MJ15016G|180|W|
|Derate above 25|C|
|2N3055AG|0.65|W/|C|
|2N3055AG|MJ1501xG|
|MJ15015G, MJ15016G|1.03|W/|C|AYWW|AYWW|
|Operating and Storage Junction|TJ, Tstg|−65 to +200|C|MEX|MEX|
|ptt|Temperature Range|
|Stresses exceeding Maximum Ratings may damage the device. Maximum|
|Ratings are stress ratings only. Functional operation above the Recommended|2N3055A|=|Device Code|
|Operating Conditions is not implied. Extended exposure to stresses above the|MJ1501x|=|Device Code|
|Recommended Operating Conditions may affect device reliability.|
|x = 5 or 6|
|1.|Indicates JEDEC Registered Data. (2N3055A)|

**----- End of picture text -----**<br>


**==> picture [120 x 133] intentionally omitted <==**

**----- Start of picture text -----**<br>
2N3055AG MJ1501xG<br>AYWW AYWW<br>MEX MEX<br>2N3055A = Device Code<br>MJ1501x = Device Code<br>x = 5 or 6<br>G = Pb−Free Package<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>MEX = Country of Origin<br>**----- End of picture text -----**<br>


## **THERMAL CHARACTERISTICS** 

**==> picture [269 x 23] intentionally omitted <==**

**----- Start of picture text -----**<br>
|||||||
|---|---|---|---|---|---|
|Characteristics|Symbol|Max|Max|Unit|
|Thermal Resistance, Junction−to−Case|R|JC|1.52|0.98|C/W|

**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

- *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **2N3055A/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 7** 

**2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TC= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TC= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**(Note 2)||||||
|Collector−Emitter Sustaining Voltage (Note 3)<br>2N3055AG<br>(IC= 200 mAdc, IB= 0)<br>MJ15015G, MJ15016G||VCEO(sus)|60<br>120|−<br>−|Vdc|
|Collector Cutoff Current<br>(VCE= 30 Vdc, VBE(off)= 0 Vdc)<br>2N3055AG<br>(VCE= 60 Vdc, VBE(off)= 0 Vdc)<br>MJ15015G, MJ15016G||ICEO|−<br>−|0.7<br>0.1|mAdc|
|Collector Cutoff Current (Note 3)<br>2N3055AG<br>(VCEV= Rated Value, VBE(off)= 1.5 Vdc)<br>MJ15015G, MJ15016G||ICEV|−<br>−|5.0<br>1.0|mAdc|
|Collector Cutoff Current<br>(VCEV= Rated Value, VBE(off)= 1.5 Vdc,<br>2N3055AG<br>TC= 150�C)<br>MJ15015G, MJ15016G||ICEV|−<br>−|30<br>6.0|mAdc|
|Emitter Cutoff Current<br>2N3055AG<br>(VEB= 7.0 Vdc, IC= 0)<br>MJ15015G, MJ15016G||IEBO|−<br>−|5.0<br>0.2|mAdc|
|**SECOND BREAKDOWN**(Note 3)||||||
|Second Breakdown Collector Current with Base Forward Biased<br>(t = 0.5 s non−repetitive)<br>2N3055AG<br>(VCE= 60 Vdc)<br>MJ15015G, MJ15016G||IS/b|1.95<br>3.0|−<br>−|Adc|
|**ON CHARACTERISTICS**(Note 2 and 3)||||||
|DC Current Gain<br>(IC= 4.0 Adc, VCE= 2.0 Vdc)<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)<br>(IC= 10 Adc, VCE= 4.0 Vdc)||hFE|10<br>20<br>5.0|70<br>70<br>−|−|
|Collector−Emitter Saturation Voltage<br>(IC= 4.0 Adc, IB= 400 mAdc)<br>(IC= 10 Adc, IB= 3.3 Adc)<br>(IC= 15 Adc, IB= 7.0 Adc)||VCE(sat)|−<br>−<br>−|1.1<br>3.0<br>5.0|Vdc|
|Base−Emitter On Voltage<br>(IC= 4.0 Adc, VCE= 4.0 Vdc)||VBE(on)|0.7|1.8|Vdc|
|**DYNAMIC CHARACTERISTICS**(Note 3)||||||
|Current−Gain − Bandwidth Product<br>2N3055AG, MJ15015G<br>(IC= 1.0 Adc, VCE= 4.0 Vdc, f = 1.0 MHz)<br>MJ15016G||fT|0.8<br>2.2|6.0<br>18|MHz|
|Output Capacitance<br>(VCB= 10 Vdc, IE= 0, f = 1.0 MHz)||Cob|60|600|pF|
|**SWITCHING CHARACTERISTICS**(2N3055AG only) (Note 3)||||||
|**RESISTIVE LOAD**||||||
|Delay Time|(VCC= 30 Vdc, IC= 4.0 Adc,<br>IB1= IB2= 0.4 Adc,<br>tp= 25�s Duty Cycle�2%|td|−|0.5|�s|
|Rise Time||tr|−|4.0|�s|
|Storage Time||ts|−|3.0|�s|
|Fall Time||tf|−|6.0|�s|



2. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2%. 

3. Indicates JEDEC Registered Data. (2N3055A) 

**http://onsemi.com 2** 

**2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)** 

**==> picture [239 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
200<br>150<br>MJ15015<br>MJ15016<br>100<br>2N3055A<br>50<br>0<br>0 25 50 75 100 125 150 175 200<br>TC, CASE TEMPERATURE (°C)<br>D(AV)<br>P         , AVERAGE POWER DISSIPATION (W)<br>**----- End of picture text -----**<br>


**Figure 1. Power Derating** 

**==> picture [490 x 403] intentionally omitted <==**

**----- Start of picture text -----**<br>
200 2.8<br>100 TJ = 150°C 2.4 T J  = 25°C<br>70<br>50 2<br>-�55°C<br>30 1.6 I C  = 1 A 4 A 8 A<br>20<br>VCE = 4.0 V 25°C 1.2<br>10<br>7 0.8<br>5<br>0.4<br>3<br>2 0<br>0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5<br>IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)<br>Figure 2. DC Current Gain Figure 3. Collector Saturation Region<br>3.5 10<br>TC = 25°C<br>3<br>5.0 MJ15016<br>2.5<br>2<br>2.0<br>1.5<br>2N3055A<br>VBE(sat) @ IC/IB = 10 MJ15015<br>1<br>1.0<br>VBE(on) @ VCE = 4 V<br>0.5<br>VCE(sat) @ IC/IB = 10<br>0<br>0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.1 0.2 0.3 0.5 1.0 2.0<br>IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS)<br>hFE, DC CURRENT GAIN<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>V, VOLTAGE (VOLTS)<br>f�, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)T<br>**----- End of picture text -----**<br>


**Figure 4. “On” Voltages** 

**Figure 5. Current−Gain − Bandwidth Product** 

**http://onsemi.com** 

**3** 

**2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)** 

**==> picture [229 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
VCC<br>+�30 V<br>7.5 �<br>25 �s<br>+13 V 30 � SCOPE<br>0<br>-11 V 1N6073<br>tr, tf ≤ 10 ns -5 V<br>DUTY CYCLE = 1.0%<br>**----- End of picture text -----**<br>


**Figure 6. Switching Times Test Circuit (Circuit shown is for NPN)** 

**==> picture [234 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>7 VCC = 30 V<br>5 IC/IB = 10<br>3 TJ = 25°C<br>2<br>tr<br>1<br>0.7<br>0.5<br>0.3<br>0.2<br>td<br>0.1<br>0.2 0.3 0.5 0.7 1 2 3 5 7 10 15<br>IC, COLLECTOR CURRENT (AMP)<br>μ<br>t, TIME (��s)<br>**----- End of picture text -----**<br>


**Figure 7. Turn−On Time** 

**==> picture [493 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 400<br>7 TJ = 25°C<br>5<br>2N3055A<br>3 200 Cib MJ15015<br>2 ts MJ15016<br>0.1 tf 100<br>0.7<br>0.5 VICCC/IB = 30 = 10 50 Cob<br>0.3 IB1 = IB2<br>0.2 TJ = 25°C 30<br>0.1 20<br>0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 1.0 2.0 5.0 10 20 50 100 200 500 1000<br>IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)<br>μ<br>t, TIME (��s)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 8. Turn−Off Times** 

**Figure 9. Capacitances** 

**http://onsemi.com** 

**4** 

**2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP)** 

## **COLLECTOR CUT−OFF REGION** 

**==> picture [490 x 378] intentionally omitted <==**

**----- Start of picture text -----**<br>
NPN PNP<br>10,000 1000<br>VCE = 30 V V CE  = 30 V<br>1000 100<br>100 10 TJ = 150°C<br>TJ = 150°C<br>10 1.0<br>100 ° C 100°C<br>1.0 0.1 IC = ICES<br>IC = ICES<br>REVERSE FORWARD<br>REVERSE FORWARD<br>0.1 0.01 25°C<br>25 ° C<br>0.01 0.001<br>+�0.2 +�0.1 0 -�0.1 -�0.2 -�0.3 -�0.4 -�0.5 -�0.2 -�0.1 0 +�0.1 +�0.2 +�0.3 +�0.4 +�0.5<br>VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS)<br>Figure 10. 2N3055A, MJ15015 Figure 11. MJ15016<br>20 20<br>30 �s 0.1�ms<br>10<br>10<br>100 �s 5.0<br>1 ms 1.0�ms<br>5<br>2.0<br>100 ms 1.0 100�ms<br>BONDING WIRE LIMIT BONDING WIRE LIMIT<br>2 THERMAL LIMIT @ TC = 25°C dc 0.5 THERMAL LIMIT @ TC = 25°C<br>(SINGLE PULSE) (SINGLE PULSE)<br>SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT dc<br>1<br>10 20 60 100 0.215 20 30 60 100 120<br>VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)<br>μ μ<br>, COLLECTOR CURRENT (��A) , COLLECTOR CURRENT (��A)<br>IC IC<br>IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)<br>**----- End of picture text -----**<br>


**Figure 12. Forward Bias Safe Operating Area 2N3055A** 

**Figure 13. Forward Bias Safe Operating Area MJ15015, MJ15016** 

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe Operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 

The data of Figures 12 and 13 is based on TC = 25�C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|2N3055AG|TO−204<br>(Pb−Free)|100 Units / Tray|
|MJ15015G|TO−204<br>(Pb−Free)|100 Units / Tray|
|MJ15016G|TO−204<br>(Pb−Free)|100 Units / Tray|



**http://onsemi.com** 

**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**DATE 05/18/1988** 

## **TO−204 (TO−3) CASE 1−07 ISSUE Z** 

## **SCALE 1:1** 

**==> picture [388 x 168] intentionally omitted <==**

**----- Start of picture text -----**<br>
A NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>N Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>, pe C 3. ALL RULES AND NOTES ASSOCIATED WITH<br>−T− SEATING REFERENCED TO-204AA OUTLINE SHALL APPLY.<br>E PLANE<br>INCHES MILLIMETERS<br>an D 2 PL K — DIM MIN MAX — MIN MAX<br>0.13 (0.005) M T Q M Y [M] AB ---1.550 REF1.050 ---39.37 REF26.67<br>a C 0.250 0.335 e 6.35 8.51<br>U D 0.038 0.043 0.97 1.09<br>−Y− E 0.055 0.070 1.40 1.77<br>V L G 0.430 BSC 10.92 BSC<br>H 0.215 BSC 5.46 BSC<br>2 K 0.440 0.480 11.18 12.19<br>G B L 0.665 BSC 16.89 BSC<br>H 1 N --- 0.830 --- 21.08<br>Q 0.151 0.165 3.84 4.19<br>U 1.187 BSC 30.15 BSC<br>−Q− — V 0.131 0.188 3.33 4.77<br>0.13 (0.005) M T Y M<br>**----- End of picture text -----**<br>


**==> picture [334 x 67] intentionally omitted <==**

**----- Start of picture text -----**<br>
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. BASE PIN 1. GATE PIN 1. GROUND PIN 1. CATHODE<br>2. EMITTER 2. COLLECTOR 2. SOURCE 2. INPUT 2. EXTERNAL TRIP/DELAY<br>CASE: COLLECTOR CASE: EMITTER CASE: DRAIN CASE: OUTPUT CASE: ANODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE #1 PIN 1. ANODE #1<br>2. EMITTER 2. OPEN 2. CATHODE #2 2. ANODE #2<br>CASE: COLLECTOR CASE: CATHODE CASE: ANODE CASE: CATHODE<br>**----- End of picture text -----**<br>


**ON Semiconductor** and           are trademarks of Semiconductor Components Industries, LLC (SCILLC).  SCILLC reserves the right to make changes without further notice to any products herein.  SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time.  All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts.  SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.  Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.  SCILLC is an Equal Opportunity/Affirmative Action Employer. 

Case Outline Number: **1** 

**1** 

© Semiconductor Components Industries, LLC, 2000 **January, 2000 − Rev. 07Z** 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**