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2N2907ACSM
Bipolar (BJT) Single Transistor, PNP, 60 V, 600 mA, 500 mW, LCC, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TT ELECTRONICS / SEMELAB
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 500mW
- DC Current Gain hFE: 100hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: PNP
- Transistor Case Style: LCC
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 200°C
- Continuous Collector Current: 600mA
- Collector Emitter Voltage Max: 60V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 15.15 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## SILICON PLANAR EPITAXIAL PNP TRANSISTOR ## 2N2907ACSM - Low Power, High Speed Saturated Switching - Hermetic Surface Mounted Package. - Ideally suited for High Speed Switching and General Purpose Applications - Screening Options Available ## ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) |VCBO<br>VCEO<br>VEBO<br>IC<br>PD<br>TJ<br>Tstg|Collector – Base Voltage<br>Collector – Emitter Voltage<br>Emitter – Base Voltage<br>Continuous Collector Current<br>Total Power Dissipation at<br>TA = 25°C<br>Derate Above 37.5°C<br>Junction Temperature Range<br>Storage Temperature Range|-60V<br>-60V<br>-5V<br>-600mA<br>500mW<br>3.08mW/°C<br>-65 to +200°C<br>-65 to +200°C| |---|---|---| ## THERMAL PROPERTIES (Each Device) |THERMAL PROPERTIES (Each Device)|THERMAL PROPERTIES (Each Device)(Each Device)Each Device))|||| |---|---|---|---|---| |Symbols|Parameters|Min.|Typ.<br>Max.|Units| |RθJA|Thermal Resistance, Junction To Ambient||325|°C/W| Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. **Semelab Limited** Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 3508 Issue 4 Page 1 of 3 Website: http://www.semelab-tt.com ## SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM **==> picture [141 x 46] intentionally omitted <==** ## ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) |Symbols|Parameters|Test Conditions|Test Conditions|Min.|Typ|Max.|Units| |---|---|---|---|---|---|---|---| |V(BR)CEO<br>(1)|Collector-Emitter<br>Breakdown Voltage|IC = -10mA|IB = 0|-60|||V| |ICBO|Collector Cut-Off Current|VCB = -60V|IE = 0|||-10|µA| |||VCB = -50V|IE = 0|||-10|nA| ||||TA = 150°C|||-10|µA| |IEBO|Emitter Cut-Off Current|VEB = -5V|IC = 0|||-10|µA| |||VEB = -4V|IC = 0|||-50|nA| |ICES|Collector Cut-Off Current|VCE = -50V||||-50|nA| |VCE(sat)<br>(1)|Collector-Emitter Saturation<br>Voltage|IC = -150mA|IB = -15mA|||-0.4<br>-1.6<br>-1.3<br>-2.6|V| |||IC = -500mA|IB = -50mA||||| |VBE(sat)<br>(1)|Base-Emitter Saturation<br>Voltage|IC = -150mA|IB = -15mA|-0.6|||| |||IC = -500mA|IB = -50mA||||| |hFE<br>(1)|Forward-current transfer<br>ratio|IC = -0.1mA|VCE = -10V|75||450<br>300|| |||IC = -1.0mA|VCE = -10V|100|||| |||IC = -10mA|VCE = -10V|100|||| ||||TA = -55°C|50|||| |||IC = -150mA|VCE = -10V|100|||| |||IC = -500mA|VCE = -10V|50|||| ## DYNAMIC CHARACTERISTICS |DYNAMIC|CHARACTERISTICS|||||| |---|---|---|---|---|---|---| || hfe ||Small signal forward-current<br>transfer ratio|IC = -20mA<br>VCE = -20V<br>f = 100MHz|2|||| |hfe|Small Signal Current Gain|IC = -1.0mA<br>VCE = -10V<br>f = 1.0KHz|100|||| |Cobo|Output Capacitance|VCB = -10V<br>IE = 0<br>f = 1.0MHz|||8<br>30|pF| |Cibo|Input Capacitance|VEB = -2V<br>IC = 0<br>f = 1.0MHz||||| |ton|Turn-On Time|IC = -150mA<br>VCC = -30V<br>IB1 = -15mA|||45<br>300|ns| |t|TOff Ti|IC = -150mA<br>VCC = -30V||||| |off|urn- me|IB1 = - IB2 = -15mA||||| **Notes** (1) Pulse Width ≤ 300us, δ ≤ 2% **Semelab Limited** Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: Document Number 3508 Issue 4 Page 2 of 3 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com ## SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907ACSM **==> picture [141 x 46] intentionally omitted <==** ## MECHANICAL DATA Dimensions in mm (inches) **==> picture [361 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> 0.51 ± 0.10<br>(0.02 ± 0.004) 0.31<br>rad.<br>(0.012)<br>3<br>2 1<br>1.91 ± 0.10<br>(0.075 ± 0.004) A<br>0.31<br>3.05 ± 0.13 (0.012) [rad.]<br>(0.12 ± 0.005) 1.40<br>(0.055)<br>A = 1.02 ± 0.10 max.<br>(0.04 ± 0.004)<br>2.54 ± 0.13<br>(0.10 ± 0.005)<br>0.76 ± 0.15<br>(0.03 ± 0.006)<br>**----- End of picture text -----**<br> ## LCC1 ## Underside View Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector **Semelab Limited** Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: Document Number 3508 Issue 4 Page 3 of 3 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Updated at February 9, 2023
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