2N2484

## **Bipolar Transistor** 

## **Features** 

- Meets MIL 19500 /376 

- Collector - Base Voltage 60V 

- Collector - Current 50mA 

- High Speed, Low Power Bipolar Transistor 

## **Absolute Maximum Ratings:** 

|**Absolute Maximum Ratings:**|||
|---|---|---|
|**Characteristic**|**Symbol**|**Rating**|
|Collector-Emitter Voltage|Vceo|60V DC|
|Collector-Base Voltage|Vcbo|60V DC|
|Emitter - Base Voltage|Vebo|6V DC|
|Continuous Collector Current|Ic|50mA DC|
|Total Device  Dissipation (Tc= +25°C)<br>Derate above 25°C|Pd|360mW<br>>2.06mW/°C|
|Total Device  Dissipation (Tc= +25°C)<br>Derate above 25°C|Pd|1.2W<br>6.85mW/°C|
|OperatingJunction Temperature Range|Tj|-65°C to +200°C|
|Storage Temperature Range|Tstg|-65°C to +200°C|



## **Thermal Characteristics** 

|**Thermal Characteristics**|||
|---|---|---|
|**Characteristics**|**Symbol**|**Maximum**|
|Thermal Resistance, Junction to Ambient|RθJA*|485|
|Thermal Resistance, Junction to Case|RθJC|146|
|Lead Temperature 1/16 inches from Case for 10s|Tl|300|



*RθJA is measured with the device soldered into a typical printed circuit board 

**Electrical Characteristics:** (Ta = +25ºC Unless otherwise specified) 

|**OFF Characteristics**||||||
|---|---|---|---|---|---|
|Collector-Emitter Breakdown Voltage|BVceo|Ic = 10mA DC, Ib = 0, (Note 1)|60|-|-<br>V DC<br>-<br>-|
|Collector-Base Breakdown Voltage|BVcbo|Ic = 10µA DC, Ie = 0|60|-||
|Emitter-Base Breakdown Voltage|BVebo|Ie = 100µA DC, Ic = 0|6|-||
|Collector-Cut-Off Current|Icbo|Vcb = 45V DC, Ie = 0|-|-|10<br>nA DC|
|||Vcb= 45V DC, Ie = 0, Ta= +150°c|-|-|10<br>µA DC|
|Emitter Cut off Current|Iebo|(Vbe= 5 VDC, Ic= 0)|-|-|10<br>nA DC|



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## **Bipolar Transistor** 

|**Parameter**|**Symbol **|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit.**|
|---|---|---|---|---|---|---|
|**On Characteristics**|||||||
|DC Current Gain|hfe|Ic= 1μA DC, Vce= 5V DC|30|190|-|-|
|||lc= 10μA DC, Vce= 5V DC|100|250|500|-|
|||lc= 10μA DC, Vce= 5V DC, Ta= 55°C|20|40|-|-|
|||lc= 100μA DC, Vce= 5 V DC|175|275|-|-|
|||lc= 500μA DC, Vce= 5V DC)|200|300|-|-|
|||lc= 1mA DC, Vce= 5V DC)|250|350|-|-|
|||lc= 10mA DC, Vce= 5V DC) (Note 1)|-|400|800|-|
|Collector-Emitter Saturation Voltage|Vce(sat)|Ic = 10mA DC, Ib= 1mA DC|-|0.25|0.35|V DC|
|Base-Emitter Saturation Voltage|Vbe(on)|Ic= 0.1mA DC, Vce= 5V DC|0.5|0.65|0.7||
|**Dynamic Characteristics**|||||||
|Current Gain-Bandwidth Product|ft|Ic= 0.05mA DC, Vce= 5V DC, f = 5MHz|15|50|-|MHz|
|||Ic= 0.5mA DC, Vce= 5 V DC, f = 30MHz|60|100|-||
|Output Capacitance|Cob|Vcb= 5 V DC, Ie= 0, f = 140kHz|-|3|6|pF|
|Input Capacitance|Cib|Vbe= 5V DC, Ie= 0, f = 140kHz|-|4|6|pF|
|Input Impedance|hIe|Ic= 1mA DC, Vce= 5V DC, f = 1kHz|3.5|-|24|kΩ|
|Voltage Feedback Ratio|hre|Ic= 1mA DC, Vce= 5V DC, f = 1kHz|-|-|800|× 10-6|
|Small Signal Current Gain|hfe|Ic= 1mA DC, Vce= 5V DC, f = 1kHz|150|-|900|-|
|Output Admittance|hoe|Ic= 1mA DC, Vce= 5V DC, f = 1kHz|-|-|40|μmhos|
|Noise Figure|NF|Ic= 10μA DC, Vce= 5V DC, Rs= 10kΩ,<br>f = 100Hz, BW = 20 Hz|-|8|10|dB|
|||Ic= 10μA DC, Vce= 5V DC, Rs = 10kΩ,<br>f = 1kHz, BW = 200Hz|-|-|3|dB|
|||Ic= 10μA DC, Vce= 5V DC, Rs= 10kΩ,<br>f = 10kHz, BW = 2kHz|-|-|2|dB|
|||(Ic= 10μA DC, Vce= 5V DC, Rs= 10kΩ,<br>f = 10Hz to 15.7kHz, BW = 15.7kHz|-|-|3|dB|



Note 1 : Pulse Test : Pulse Width ≤ 300 μs, Duty Cycle ≤ 2% 

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## **Bipolar Transistor** 

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Dimensions : Inches<br>**----- End of picture text -----**<br>


## **Notes:** 

1. Dimensions are in Inches 

2. Tab width shall be held to tolerance for at least 0.011 Beyond corner radius 

3. True position applies at gage plane; device may be measured by direct methods or by mil spec. Gage & procedure. 4. Symbol indicates portion of leads not held to tolerance. 

5. 0.016/0.019 Lead Dia. applies between 0.05 max. & 0.25 min. 

6. 0.016/0.021 Lead Dia. applies between 0.25 min. & 0.5 min. 

7. Standard product lead finish is gold plate. Optional lead finish shall be hot solder dip per customer spec. 

## **Part Number Table** 

|**Part Number Table**||
|---|---|
|**Description**|**Part Number**|
|Bipolar Transistor, NPN, 50mA, 60V, TO-18|2N2484|



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