2KK6024

## **N Channel MOSFET** 

## **Features** 

- VDS (V) = 60V 

- ID = 35A 

- RDS(ON) < 23mΩ (VGS = 10V) 

- RDS(ON) < 33mΩ (VGS = 4.5V) 

- RDS(ON) < 37mΩ (VGS = 4V) 

## **Absolute Maximum Ratings** Ta = 25°C 

|**Absolute Maximum Ratings**Ta = 25°C||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Rating**|**Unit**|
|Drain-Source Voltage|VDS|60|V|
|Gate-Source Voltage|VGS|+20||
|Continuous Drain Current|ID|35|A|
|Pulsed Drain Current(Note.1)|IDP|105||
|Avalanche Current(Note.2)|IAV|18||
|Avalanche Energy (Single Pulse) (Note.3)|EAS|19|mJ|
|Power Dissipation TC=25°C|PD|40|W|
|Junction Temperature|TJ|150|°C|
|Storage Temperature Range|Tstg|-55 to 150||



Note.1 :PW ≤ 10 us, duty cycle ≤ 1% Note.2 :L≤100μH, Single pulse Note.3 :VDD=10V, L=100μH, IAV=18A 

## **Electrical Characteristics** (TA = 25°C 

|**Electrical Characteristics**(TA = 25°CA = 25°C= 25°C|||||||
|---|---|---|---|---|---|---|
|**Parameter**<br>~~a~~|**Symbol**<br>~~GG~~|**Test Conditions**<br>~~GG~~|**Min**<br>~~GG~~|**Typ**<br>~~GG~~|**Max Unit**|**Max Unit**|
|Drain-Source Breakdown Voltage<br>~~GG~~|VDSS<br>~~GG~~|ID=10mA, VGS=0V<br>~~GG~~|60<br>~~GG~~|~~GG~~|~~GG~~|V<br>~~GG~~|
|Zero Gate Voltage Drain Current<br>~~Qe~~|IDSS<br>~~Qe~~|VDS=-60V, VGS=0V<br>~~Qe~~|~~Qe~~<br>~~GG~~|~~Qe~~<br>~~GG~~|1<br>~~Qe~~|µA<br>~~Qe~~|
|Gate-BodyLeakage Current<br>~~GG~~|IGSS<br>~~GG~~|VDS=0V, VGS=±16V<br>~~GG~~|~~GG~~<br>~~GG~~|~~GG~~<br>~~GG~~|±100<br>~~GG~~|nA<br>~~GG~~|
|Cutoff Voltage<br>~~Qe~~|VGS(off)<br>~~Qe~~|VDS=10V ID=-1mA<br>~~Qe~~|1.2<br>~~GG~~<br>~~Qe~~|~~GG~~<br>~~Qe~~|2.6<br>~~Qe~~|V<br>~~Qe~~|
|Forward Transfer Admittance<br>~~Qe~~<br>~~ee~~|IYfsI<br>~~Qe~~|VDS=10V ID=-18A<br>~~Qe~~|~~Qe~~<br>~~ee~~|35<br>~~Qe~~|~~Qe~~|S<br>~~Qe~~|
|Static Drain-Source On-Resistance<br>~~ee~~|RDS(On)1<br>~~a~~<br>~~a~~|VGS=10V ID=-18A<br>~~ee~~<br>~~ee~~<br>|~~ee~~<br>~~ee~~<br>~~ee~~<br>|17<br>~~ee~~<br>~~ee~~<br>|23<br>~~ee~~<br>~~ee~~<br>|mΩ<br>~~ee~~<br>~~ee~~<br>~~ee~~|
||RDS(On)2<br>~~a~~|VGS=10V ID=-9A<br>~~ee~~<br>|~~ee~~<br>~~ee~~<br><br>~~ee~~|23<br>~~ee~~<br><br>~~ee~~|33<br>~~ee~~<br>||
||RDS(On)3<br>~~a~~|VGS=10V ID=-5A<br>~~ee~~<br>~~ee~~|~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~<br>~~ee~~|57<br>~~ee~~<br>~~ee~~||



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## **N Channel MOSFET** 

|**Parameter**<br>**S**|**ymbol**|**Test Conditions**|**Min**<br>**Ty**|**p**<br>**Max**|**Unit**|
|---|---|---|---|---|---|
|Input Capacitance|Ciss<br>Coss<br>Crss|VGS=0V, VDS=20V, f=1MHz|18<br>15<br>10|20|pF|
|Output Capacitance||||0||
|Reverse Transfer Capacitance||||0||
|Total Gate Charge|Qg<br><br>Qgs<br>Qgd|VGS=-10V, VDS=30V, ID=35A|34<br>6.<br>6.|.5|nC|
|Gate Source Charge||||5||
|Gate Drain Charge||||8||
|Turn-On DelayTime|td(on)<br>tr<br>td(of)<br>tf|See specifed Test Circuit|1<br>11<br>12<br>8|6|nS|
|Turn-On Rise Time||||0||
|Turn-Of DelayTime||||5||
|Turn-Of Fall Time||||7||
|Maximum Body-Diode Continuous Current|IS<br>ISD=-|12A, VGS=0V||3.5|A|
|Diode Forward Voltage|VSD<br>IS=1.|5A,VGS=0V|0.9|6<br>1.2|V|



## **Typical Characterisitics** 

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## **N Channel MOSFET** 

## **Typical Characterisitics** 

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## **Switching Time Test Circuit** 

## **Diagram** 

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## **Part Number Table** 

## Dimensions : Millimetres 

||**Part Number Table**||
|---|---|---|
||**Description**|**Part Number**|
||N Channel MOSFET, 35A, 60V|2KK6024|



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