2KBP005M-E4/51
Bridge Rectifier, Single Phase, 50 V, 2 A, SIP, 4 Pins, 1.1 V
- Manufacturer: VISHAY
- Product type: Bridge Rectifier Diodes
- No. of Pins: 4Pins
- No. of Phases: Single Phase
- Product Range: 2KBP0
- Forward Voltage Max: 1.1V
- Average Forward Current: 2A
- Bridge Rectifier Mounting: Through Hole
- Operating Temperature Max: 165°C
- Bridge Rectifier Case Style: SIP
- Repetitive Peak Reverse Voltage: 50V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.199 € |
| Current stock | 10+ |
| Lead time | 30 days |
**2KBPxxM-E4, 3N25x-E4** ~~—~~ www.vishay.com ## Vishay General Semiconductor ## **Glass Passivated Single-Phase Bridge Rectifier** ## **FEATURES** **==> picture [499 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> FEATURES<br>• UL recognition file number E54214<br>• Ideal for printed circuit board<br>• High surge current capability<br>• High case dielectric strength<br>− • Solder dip 275 °C max. 10 s, per JESD 22-B106<br>~<br>~ + ~ ~ − • Material categorization: for definitions of compliance<br>Hh please see www.vishay.com/doc?99912 =<br>eo. + s)<br>Case Style KBPM TYPICAL APPLICATIONS<br>**----- End of picture text -----**<br> ## **TYPICAL APPLICATIONS** General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. ## **PRIMARY CHARACTERISTICS** |Package|KBPM|| |---|---|---| |IF(AV)|2.0 A|| |VRRM|50 V to 1000 V|50 V to 1000 V| |IFSM<br>IR|60 A<br>5 μA|| |VFat IF= 3.14 A<br>TJmax.|1.1 V<br>165 °C|| |Diode variations|In-line|| ## **MECHANICAL DATA** ## **Case:** KBPM Molding compound meets UL 94 V-0 flammability rating Base P/N-E4 - RoHS-compliant, commercial grade **Terminals:** Silver plated leads, solderable per J-STD-002 and JESD22-B102 **Polarity:** As marked on body ~~pT~~ **MAXIMUM RATINGS** (TA = 25 °C unless otherwise noted) **PARAMETER SYMBOL[2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M ] UNIT 3N253 3N254 3N255 3N256 3N257 3N258 3N259** ~~rrr a~~ Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V ~~es~~ Maximum RMS voltage VRMS 35 70 ~~GG~~ 140 280 420 560 700 V ~~ss~~ Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward output rectified current at TA = 55 °C IF(AV) 2.0 A ~~ee~~ Peak forward surge current single half ~~[ee] ss DO~~ sine-wave superimposed on rated IFSM 60 A load ~~a GG~~ Rating for fusing (t < 8.3 ms) I[2] t 15 A[2] s Operating junction and storage TJ, TSTG -55 to +165 °C ~~a~~ temperature range ~~ee~~ |**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)| |---|---|---|---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**TEST**<br>**CONDITIONS**|**2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M**|**2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M**|**2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M**|**2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M**|**2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M**|**2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M**|**2KBP005M 2KBP01M 2KBP02M 2KBP04M 2KBP06M 2KBP08M 2KBP10M**|**UNIT**| ||||**3N253**|**3N254**|**3N255**|**3N256**|**3N257**|**3N258**|**3N259**|| |Maximum instantaneous<br>forward voltage drop per<br>diode|VF|3.14 A|1.1|||||||V| |Maximum DC reverse<br>current at rated DC<br>blocking voltage per diode|IR|TA= 25 °C|5.0|||||||μA| |||TA= 125 °C|500|||||||| |Typical junction<br>capacitance per diode|TJ|4.0 V,<br>1 MHz|25|||||||pF| Revision: 05-Aug-15 **1** Document Number: 88532 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **2KBPxxM-E4, 3N25x-E4** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com Vishay General Semiconductor |**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)|**THERMAL CHARACTERISTICS**(TA= 25 °C unless otherwise noted)| |---|---|---|---|---|---|---|---|---|---| |**PARAMETER**|**SYMBOL**|**2KBP005M**|**2KBP01M**|**2KBP02M**|**2KBP04M**|**2KBP06M**|**2KBP08M**|**2KBP10M**|**UNIT**| |||**3N253**|**3N254**|**3N255**|**3N256**|**3N257**|**3N258**|**3N259**|| |Typical thermal resistance|RJA (1)|30|||||||°C/W| ||RJL (1)|11|||||||| ## **Note** > (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with, 0.47" x 0.47" (12 mm x 12 mm) copper pads |**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)|**ORDERING INFORMATION**(Example)| |---|---|---|---|---| |**PREFERRED P/N**|**UNIT WEIGHT (g)**|**PACKAGE CODE**|**BASE QUANTITY**|**DELIVERY MODE**| |2KBP06M-E4/51|1.895|51|600|Anti-static PVC tray| |3N257-E4/51|1.895|51|600|Anti-static PVC tray| ## **RATINGS AND CHARACTERISTICS CURVES** (TA = 25 °C unless otherwise noted) **==> picture [196 x 352] intentionally omitted <==** **----- Start of picture text -----**<br> 60 Hz Resistive or<br>Inductive Load<br>PCB Mounted<br>with 0.47 x 0.47"<br>(12 x 12 mm)<br>Copper Pads<br>Capacitive Load<br>II (AV) (pk) = 5.010<br>(Per Leg) 20<br>Ambient Temperature (°C)<br>Fig. 1 - Derating Curve Output Rectified Current<br>TJ = 150 °C<br>Single Sine-Wave<br>1.0 Cycle<br>Number of Cycles at 60 Hz<br>2.0<br>1.5<br>1.0<br>0.5<br>0<br>20 40 60 80 100 120 140 160170<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>1 10 100<br>Peak Forward Surge Current (A)<br>Average Forward Output Current (A)<br>**----- End of picture text -----**<br> Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeCurrent Per Diode **==> picture [199 x 348] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1 TJ = 25 ° C<br>Pulse Width = 300 µs<br>1 % Duty Cycle<br>0.01<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Instantaneous Forward Voltage (V)<br>Fig. 3 - Typical Forward Characteristics Per Diode<br>100<br>TJ = 125 °C<br>10 TJ = 100 °C<br>1<br>0.1<br>T J = 25 °C<br>0.01<br>0 20 40 60 80 100<br>Percent of Rated Peak Reverse Voltage (%)<br>Instantaneous Reverse Current (µA)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 4 - Typical Reverse Leakage Characteristics Per Diode Revision: 05-Aug-15 Document Number: 88532 **2** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **2KBPxxM-E4, 3N25x-E4** **==> picture [59 x 48] intentionally omitted <==** www.vishay.com ## Vishay General Semiconductor **==> picture [195 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> T J = 25 °C<br>f = 1.0 MHz<br>V sig = 50 mVp-p<br>Reverse Voltage (V)<br>100<br>10<br>1<br>0.1 1 10 100<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br> Fig. 5 - Typical Junction Capacitance Per Diode ## **PACKAGE OUTLINE DIMENSIONS** in inches (millimeters) **==> picture [224 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> Case Style KBPM<br>0.600 (15.24)<br>0.125 x 45° 0.560 (14.22)<br>(3.2)<br>0.460 (11.68) 0.500 (12.70)<br>0.420 (10.67) 0.460 (11.68)<br>0.60<br>(15.2) 0.50 (12.7) MIN.<br>MIN.<br>0.060<br>0.034 (0.86) (1.52)<br>0.028 (0.76) 0.160 (4.1)<br>DIA. 0.140 (3.6)<br>0.105 (2.67)<br>0.200 (5.08) 0.085 (2.16)<br>0.180 (4.57)<br>Polarity shown on front side of case: positive lead by beveled corner<br>**----- End of picture text -----**<br> Revision: 05-Aug-15 Document Number: 88532 **3** For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 **Legal Disclaimer Notice** Vishay www.vishay.com **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 Document Number: 91000 **1**
Updated at February 9, 2023
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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