2DD2678-13

**2DD2678** 

**LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR** Please click here to visit our online spice models database. Please click here to visit our online spice models database. 

## **Features** 

- Epitaxial Planar Die Construction 

- Ideally Suited for Automated Assembly Processes 

- Ideal for Medium Power Switching or Amplification Applications 

- **Lead Free By Design/RoHS Compliant (Note 1)** 

- **"Green" Device (Note 2)** 

## **Mechanical Data** 

- Case: SOT89-3L 

- Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 

- Moisture Sensitivity: Level 1 per J-STD-020D 

- Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 

- • Marking Information: See Page 3 

- Ordering Information: See Page 3 

- Weight: 0.072 grams (approximate) 

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2,4<br>1<br>3<br>'<br>Top View Device Schematic Pin Out Configuration<br>EMITTER<br>COLLECTOR<br>BASE<br>3 E<br>C 4 2 C<br>1 B<br>TOP VIEW<br>**----- End of picture text -----**<br>


## **Maximum Ratings** @TA = 25°C unless otherwise specified 

|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|
|||||
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|15|V|
|Collector-Emitter Voltage|VCEO|12|V|
|Emitter-Base Voltage|VEBO|6|V|
|Peak Pulse Current|ICM|6|A|
|Continuous Collector Current|IC|3|A|



## **Thermal Characteristics** 

|**Thermal Characteristics**||||
|---|---|---|---|
|**Characteristic**|**Symbol **|**Value**|**Unit**|
|Power Dissipation(Note 3) @TA= 25°C|PD|0.9|W|
|Thermal Resistance,Junction to Ambient Air(Note 3) @TA= 25°C|RθJA|139|°C/W|
|Power Dissipation(Note 4) @TA= 25°C|PD|2|W|
|Thermal Resistance,Junction to Ambient Air(Note 4) @TA= 25°C|RθJA|62.5|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** @TA = 25°C unless otherwise specified 

|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|**Electrical Characteristics** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~Pf~~|**Symbol **<br>~~Pf~~|**Min**<br>~~Pf~~|**Typ**<br>~~Pf~~|**Max **<br>~~Pf~~|**Unit**<br>~~Pf~~|**Conditions**<br>~~Pf~~|
|**OFFCHARACTERISTICS**<br>~~PO~~<br>~~QO~~|||||||
|Collector-Base Breakdown Voltage<br>~~a~~|V(BR)CBO<br>~~a~~|15<br>~~a~~<br>~~QO~~|⎯<br>~~a~~<br>~~QO~~|⎯<br>~~a~~<br>~~QO~~|V<br>~~a~~<br>~~QO~~|IC= 10μA,IE= 0<br>~~a~~|
|Collector-Emitter Breakdown Voltage(Note 5)<br>~~QC~~|V(BR)CEO<br>~~QC~~|12<br>~~QO~~<br>~~QC~~|⎯<br>~~QO~~<br>~~QC~~|⎯<br>~~QO~~<br>~~QC~~|V<br>~~QO~~<br>~~QC~~|IC= 1mA,IB= 0<br>~~QC~~|
|Emitter-Base Breakdown Voltage<br>~~a~~|V(BR)EBO<br>~~GQ~~|6<br>~~GQ~~|⎯<br>~~GQ~~|⎯<br>~~GQ~~|V<br>~~GQ~~|IE= 10μA,IC= 0<br>~~GQ~~|
|Collector Cut-Off Current<br>~~a~~|ICBO|⎯<br>~~QO~~|⎯<br>~~QO~~|0.1<br>~~QO~~|μA|VCB= 15V,IE= 0|
|Emitter Cut-Off Current<br>~~QC~~|IEBO<br>~~QC~~|⎯<br>~~QC~~|⎯<br>~~QC~~|0.1<br>~~QC~~|μA<br>~~QC~~|VEB= 6V,IC= 0<br>~~QC~~|
|**ON CHARACTERISTICS(Note 5)**<br>~~Rn~~<br>~~(~~|||||||
|Collector-Emitter Saturation Voltage<br>~~QO~~|VCE(SAT)<br>~~QO~~|⎯<br>~~QO~~|90<br>~~QO~~|250<br>~~QO~~|mV<br>~~QO~~|IC= 1.5A,IB= 30mA<br>~~QO~~<br>~~(~~|
|DC Current Gain<br>~~QC~~|hFE<br>~~QC~~|270<br>~~QC~~|⎯<br>~~QC~~|680<br>~~QC~~|⎯<br>~~QC~~|VCE= 2V,IC= 500mA<br>~~(~~<br>~~QC~~|
|**SMALLSIGNALCHARACTERISTICS**<br>~~Ct~~|||||||
|Output Capacitance|Cobo|⎯|26|⎯|pF|VCB= 10V, IE= 0,<br>f = 1MHz|
|Current Gain-Bandwidth Product|fT|⎯|170|⎯|MHz|VCE= 2V, IC= 100mA,<br>f = 100MHz|



Notes: 1. No purposefully added lead. 

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 

3. Device mounted on FR-4 PCB with minimum recommended pad layout. 

4.    Device mounted on FR-4 PCB with 1 inch[2] copper pad layout. 

5.    Measured under pulsed conditions.  Pulse width = 300μs.  Duty cycle ≤2%. 

1 of 4 **www.diodes.com** 

2DD2678 Document number: DS31637 Rev. 3 - 2 

April 2010 © Diodes Incorporated 

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2DD2678<br>2.01.6 ENG 2.52.0<br>IB = 5mA<br>1.2 1.5 I B  = 4mA<br>IB = 3mA<br>0.8 4 N 1.0<br>IB = 2mA<br>0.4 NA 0.5<br>IB = 1mA<br>0 YEA 0<br>0 25 50 75 100 125 150 0 1 2 3 4 5<br>TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1 Power Dissipation vs.  Fig. 2 Typical Collector Current<br>Ambient Temperature vs. Collector-Emitter Voltage<br>1,000 TA = 150 ° C 1<br>IC/IB = 20<br>T A  = 85°C<br>aN T A  = 25°C<br>0.1 TA = 150°C<br>TA = -55°C T A  = 85°C<br>100 TA = 25°C<br>TA = -55°C<br>0.01<br>—S ies<br>V CE  = 2V<br>10 0.001<br>0.1 1 10 100 1,000 10,000 0.1 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>V CE  = 2V I C /I B  = 20<br>1.0 1.0<br>0.8 0.8<br>CEN TA = -55 ° C  Py at T A  = -55°C ERE<br>0.6 0.6<br>T A  = 25°C TA = 25°C<br>0.4 TA = 85°C 0.4 TA = 85°C<br>T A  = 150°C<br>neo ee<br>0.2 TA = 150 ° C 0.2<br>0 0<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage  Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>, POWER DISSIPATION (mW)<br>D , COLLECTOR CURRENT (A)<br>P IC<br>, DC CURRENT GAIN  , COLLECTOR-EMITTER  VOLTAGE (V)<br>FE<br>h<br>SATURATION<br>CE(SAT)<br>V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br>


2 of 4 **www.diodes.com** 

2DD2678 Document number: DS31637 Rev. 3 - 2 

April 2010 © Diodes Incorporated 

**2DD2678** 

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1,000 1,000<br>f = 1MHz<br>100<br>Su tt See eee<br>100<br>C ibo<br>10<br>V CE  = 2V<br>Cobo f = 100MHz<br>10 1<br>0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Fig. 7 Typical Capacitance Characteristics Fig. 8 Typical Gain-Bandwidth Product<br>vs. Collector Current<br>CAPACITANCE (pF)<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 6) 

|||**Part Number**|**Case**|**Packaging**|
|---|---|---|---|---|
|||2DD2678-13|SOT89-3L|2500/Tape &Reel|
|Notes:|6.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.|6.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.|6.  For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.||



## **Marking Information** 

|**2678**<br>**YWW**||2678 = Product Type Marking Code<br>YWW = Date Code Marking<br>Y = Last digit of year (ex: 8 = 2008)<br>WW = Week code (01 – 53)|
|---|---|---|



## **Package Outline Dimensions** 

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D1<br>C<br>E<br>H<br>B L<br>Cy i l<br>B1 e<br>e1<br>TaD |<br>A<br>D<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br>


|**SOT89-3L**|**SOT89-3L**|**SOT89-3L**|
|---|---|---|
|**Dim**|**Min**|Max|
|**A**|1.40|1.60|
|**B**|0.44|0.62|
|**B1**|0.35|0.54|
|**C**|0.35|0.43|
|**D**|4.40|4.60|
|**D1**|1.52|1.83|
|**E**|2.29|2.60|
|**e**|1.50Typ||
|**e1**|3.00Typ||
|**H**|3.94|4.25|
|**L**|0.89|1.20|
|**All Dimensions in mm**|||



3 of 4 **www.diodes.com** 

2DD2678 Document number: DS31637 Rev. 3 - 2 

April 2010 © Diodes Incorporated 

**2DD2678** 

## **Suggested Pad Layout** 

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X1<br>Dimensions Value (in mm)<br>X  0.900<br>X1  1.733<br>X2  ( 2x)<br>X2  0.416<br>Y1 Y  1.300<br>Y3 Y4 Y1  4.600<br>Y2  1.475<br>Y Y2 Y3 0.950<br>aU C| | Y4  1.125<br>C C 1.500<br>a eo<br>X (3x)<br>**----- End of picture text -----**<br>


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## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

- B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

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Copyright © 2010, Diodes Incorporated 

**www.diodes.com** 

4 of 4 **www.diodes.com** 

2DD2678 Document number: DS31637 Rev. 3 - 2 

April 2010 © Diodes Incorporated