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2DD2661-13
Bipolar (BJT) Single Transistor, NPN, 12 V, 1 A, 900 mW, SOT-89, Surface Mount
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- Manufacturer: DIODES INC.
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 900mW
- DC Current Gain hFE: 270hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 170MHz
- Transistor Case Style: SOT-89
- DC Current Gain hFE Min: 270hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 1A
- Collector Emitter Voltage Max: 12V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.153 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
| **2DD2661** - **Features** • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary PNP Type Available (2DB1697) • **Lead Free By Design/RoHS Compliant (Note 1)** • **"Green" Device (Note 2)** 1 - Top View - ~~-mcoreporRa:S~~ - **Maximum Ratings** @TA = 25°C unless otherwise specified BASE # **LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR** Please click here to visit our online spice models database. Please click here to visit our online spice models database. **Mechanical Data** - Case: SOT89-3L - Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020D - Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 - Marking Information: See Page 3 - Ordering Information: See Page 3 - Weight: 0.072 grams (approximate) **==> picture [264 x 89] intentionally omitted <==** **----- Start of picture text -----**<br> 2,4<br>1<br>3<br>Top View Device Schematic Pin Out Configuration<br>EMITTER<br>COLLECTOR<br>BASE<br>3 E<br>C 4 2 C<br>1 B<br>TOP VIEW<br>**----- End of picture text -----**<br> |**2DD2661**<br>**LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTORCE(SAT) NPN SURFACE MOUNT TRANSISTOR NPN SURFACE MOUNT TRANSISTOR**<br>**Features**<br>•<br>Epitaxial Planar Die Construction<br>•<br>Ideally Suited for Automated Assembly Processes<br>•<br>Ideal for Medium Power Switching or Amplification Applications<br>•<br>Complementary PNP Type Available (2DB1697)<br>•<br>**Lead Free By Design/RoHS Compliant (Note 1)**<br>•<br>**"Green" Device (Note 2)**<br>**Mechanical Data**<br>•<br>Case: SOT89-3L<br>•<br>Case Material: Molded Plastic, "Green” Molding Compound.<br>UL Flammability Classification Rating 94V-0<br>•<br>Moisture Sensitivity: Level 1 per J-STD-020D<br>•<br>Terminals: Finish — Matte Tin annealed over Copper leadframe<br>(Lead Free Plating). Solderable per MIL-STD-202, Method 208<br>•<br>Marking Information: See Page 3<br>•<br>Ordering Information: See Page 3<br>•<br>Weight: 0.072 grams (approximate)<br>**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified<br>Top View<br>Device Schematic<br>Pin Out Configuration<br>4<br>3<br>2<br>1<br>C<br>C<br>B<br>E<br>TOP VIEW<br>3<br>1<br>2,4<br>COLLECTOR<br>EMITTER<br>BASE<br>~~-mcoreporRa:S:S~~<br>~~Lead-fr~~~~**e** Gr~~~~**e**n~~<br>~~[~~<br>Please click here to visit our online spice models database.<br>Please click here to visit our online spice models database.|**2DD2661**<br>**LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTORCE(SAT) NPN SURFACE MOUNT TRANSISTOR NPN SURFACE MOUNT TRANSISTOR**<br>**Features**<br>•<br>Epitaxial Planar Die Construction<br>•<br>Ideally Suited for Automated Assembly Processes<br>•<br>Ideal for Medium Power Switching or Amplification Applications<br>•<br>Complementary PNP Type Available (2DB1697)<br>•<br>**Lead Free By Design/RoHS Compliant (Note 1)**<br>•<br>**"Green" Device (Note 2)**<br>**Mechanical Data**<br>•<br>Case: SOT89-3L<br>•<br>Case Material: Molded Plastic, "Green” Molding Compound.<br>UL Flammability Classification Rating 94V-0<br>•<br>Moisture Sensitivity: Level 1 per J-STD-020D<br>•<br>Terminals: Finish — Matte Tin annealed over Copper leadframe<br>(Lead Free Plating). Solderable per MIL-STD-202, Method 208<br>•<br>Marking Information: See Page 3<br>•<br>Ordering Information: See Page 3<br>•<br>Weight: 0.072 grams (approximate)<br>**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified<br>Top View<br>Device Schematic<br>Pin Out Configuration<br>4<br>3<br>2<br>1<br>C<br>C<br>B<br>E<br>TOP VIEW<br>3<br>1<br>2,4<br>COLLECTOR<br>EMITTER<br>BASE<br>~~-mcoreporRa:S:S~~<br>~~Lead-fr~~~~**e** Gr~~~~**e**n~~<br>~~[~~<br>Please click here to visit our online spice models database.<br>Please click here to visit our online spice models database.|**2DD2661**<br>**LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTORCE(SAT) NPN SURFACE MOUNT TRANSISTOR NPN SURFACE MOUNT TRANSISTOR**<br>**Features**<br>•<br>Epitaxial Planar Die Construction<br>•<br>Ideally Suited for Automated Assembly Processes<br>•<br>Ideal for Medium Power Switching or Amplification Applications<br>•<br>Complementary PNP Type Available (2DB1697)<br>•<br>**Lead Free By Design/RoHS Compliant (Note 1)**<br>•<br>**"Green" Device (Note 2)**<br>**Mechanical Data**<br>•<br>Case: SOT89-3L<br>•<br>Case Material: Molded Plastic, "Green” Molding Compound.<br>UL Flammability Classification Rating 94V-0<br>•<br>Moisture Sensitivity: Level 1 per J-STD-020D<br>•<br>Terminals: Finish — Matte Tin annealed over Copper leadframe<br>(Lead Free Plating). Solderable per MIL-STD-202, Method 208<br>•<br>Marking Information: See Page 3<br>•<br>Ordering Information: See Page 3<br>•<br>Weight: 0.072 grams (approximate)<br>**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified<br>Top View<br>Device Schematic<br>Pin Out Configuration<br>4<br>3<br>2<br>1<br>C<br>C<br>B<br>E<br>TOP VIEW<br>3<br>1<br>2,4<br>COLLECTOR<br>EMITTER<br>BASE<br>~~-mcoreporRa:S:S~~<br>~~Lead-fr~~~~**e** Gr~~~~**e**n~~<br>~~[~~<br>Please click here to visit our online spice models database.<br>Please click here to visit our online spice models database.|**2DD2661**<br>**LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTORCE(SAT) NPN SURFACE MOUNT TRANSISTOR NPN SURFACE MOUNT TRANSISTOR**<br>**Features**<br>•<br>Epitaxial Planar Die Construction<br>•<br>Ideally Suited for Automated Assembly Processes<br>•<br>Ideal for Medium Power Switching or Amplification Applications<br>•<br>Complementary PNP Type Available (2DB1697)<br>•<br>**Lead Free By Design/RoHS Compliant (Note 1)**<br>•<br>**"Green" Device (Note 2)**<br>**Mechanical Data**<br>•<br>Case: SOT89-3L<br>•<br>Case Material: Molded Plastic, "Green” Molding Compound.<br>UL Flammability Classification Rating 94V-0<br>•<br>Moisture Sensitivity: Level 1 per J-STD-020D<br>•<br>Terminals: Finish — Matte Tin annealed over Copper leadframe<br>(Lead Free Plating). Solderable per MIL-STD-202, Method 208<br>•<br>Marking Information: See Page 3<br>•<br>Ordering Information: See Page 3<br>•<br>Weight: 0.072 grams (approximate)<br>**Maximum Ratingsgss** @TA = 25°C unless otherwise specifiedA = 25°C unless otherwise specified= 25°C unless otherwise specified<br>Top View<br>Device Schematic<br>Pin Out Configuration<br>4<br>3<br>2<br>1<br>C<br>C<br>B<br>E<br>TOP VIEW<br>3<br>1<br>2,4<br>COLLECTOR<br>EMITTER<br>BASE<br>~~-mcoreporRa:S:S~~<br>~~Lead-fr~~~~**e** Gr~~~~**e**n~~<br>~~[~~<br>Please click here to visit our online spice models database.<br>Please click here to visit our online spice models database.| |---|---|---|---| ||||| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Collector-Base Voltage|VCBO|15|V| |Collector-Emitter Voltage|VCEO|12|V| |Emitter-Base Voltage|VEBO|6|V| |Peak Pulse Current|ICM|4|A| |Continuous Collector Current|IC|2|A| ## **Thermal Characteristics** |**Thermal Characteristics**|||| |---|---|---|---| |**Characteristic**|**Symbol **|**Value**|**Unit**| |Power Dissipation(Note 3) @TA= 25°C|PD|0.9|W| |Thermal Resistance,Junction to Ambient Air(Note 3) @TA= 25°C|RθJA|139|°C/W| |Power Dissipation(Note 4) @TA= 25°C|PD|2|W| |Thermal Resistance,Junction to Ambient Air(Note 4) @TA= 25°C|RθJA|62.5|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| **Electrical Characteristics** @TA = 25°C unless otherwise specified ~~Pf~~ **Characteristic Symbol Min Typ Max Unit Conditions** ~~PO~~ **OFF CHARACTERISTICS** ~~a~~ Collector-Base Breakdown Voltage V(BR)CBO 15 ⎯ ⎯ V IC = 10μA, IE = 0 ~~QO QC~~ Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 12 ⎯ ⎯ V IC = 1mA, IB = 0 ~~a~~ Emitter-Base Breakdown Voltage ~~GQ~~ V(BR)EBO 6 ⎯ ⎯ V IE = 10μA, IC = 0 ~~a~~ Collector Cut-Off Current ICBO ⎯ ~~QO~~ ⎯ 0.1 μA VCB = 15V, IE = 0 ~~QC~~ Emitter Cut-Off Current IEBO ⎯ ⎯ 0.1 μA VEB = 6V, IC = 0 ~~CO~~ **ON CHARACTERISTICS (Note 5)** ~~QO~~ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 180 mV IC = 1A, IB = 50mA ~~( QC~~ DC Current Gain hFE 270 ⎯ 680 ⎯ VCE = 2V, IC = 200mA ~~Ct~~ **SMALL SIGNAL CHARACTERISTICS** Output Capacitance Cobo ⎯ 26 ⎯ pF VCB = 10V, IE = 0, f = 1MHz VCE = 2V, IC = 100mA, Current Gain-Bandwidth Product fT ⎯ 170 ⎯ MHz f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Device mounted on FR-4 PCB with 1 inch[2] copper pad layout. 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Please click here to visit our online spice **Mechanical Data** Case: SOT89-3L UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.072 grams (approximate) Pin Out Configuration ~~Lead-fr~~ ~~**e** Gr~~ ~~**e** n [~~ 3 E C 4 2 C 1 B TOP VIEW 1 of 4 **www.diodes.com** 2DD2661 Document number: DS31635 Rev. 2 - 2 December 2008 © Diodes Incorporated **==> picture [553 x 697] intentionally omitted <==** **----- Start of picture text -----**<br> 2DD2661<br>2.0 2.5<br>1.6 2.0 IB = 5mA<br>1.2 1.5 IB = 4mA<br>IB = 3mA<br>0.8 TEN UT 1.0<br>IB = 2mA<br>0.4 SA 0.5<br>IB = 1mA<br>0 aN 0 [=]<br>0 25 50 75 100 125 150 0 4 8 12 16 20<br>TA, AMBIENT TEMPERATURE (°C) VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current<br>vs. Collector-Emitter Voltage<br>1,000 1<br>T A = 150°C<br>T A = 85°C I C /I B = 20<br>TA = 25°C<br>| NEL [HH] 0.1 TA = 150°C<br>T A = -55°C TA = 85°C<br>100 T A = 25°C<br>T A = -55°C<br>0.01<br>Eo Se Ld<br>V CE = 2V<br>10 0.001<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 3 Typical DC Current Gain vs. Collector Current Fig. 4 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>1.2 1.2<br>V CE = 2V I C /I B = 20<br>1.0<br>1.0<br>0.8<br>st T A = -55°C eee 0.8 mn RL<br>TA = -55°C<br>0.6<br>T A = 25°C 0.6 TA = 25°C<br>0.4 TA = 85°C<br>TA = 85°C<br>0.2 abe T A = 150°C 0.4 AA<br>TA = 150°C<br>0 0.2<br>1 10 100 1,000 10,000 1 10 100 1,000 10,000<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 5 Typical Base-Emitter Turn-On Voltage Fig. 6 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>, POWER DISSIPATION (W)<br>D<br>P , COLLECTOR CURRENT (A)IC<br>NEW PRODUCT<br>VOLTAGE (V)<br>, DC CURRENT GAIN , COLLECTOR-EMITTER<br>FE<br>h<br>SATURATION<br>CE(SAT)<br>V<br>, BASE-EMITTER TURN-ON VOLTAGE (V) , BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(ON)<br>V<br>BE(SAT)<br>V<br>**----- End of picture text -----**<br> 2 of 4 **www.diodes.com** 2DD2661 Document number: DS31635 Rev. 2 - 2 December 2008 © Diodes Incorporated **==> picture [561 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 2DD2661<br>1,000 1,000<br>f = 1MHz<br>100<br>100<br>Cibo<br>10<br>Cobo VCE = 2V<br>f = 100MHz<br>10 1<br>0.1 1 10 100 0 10 20 30 40 50 60 70 80 90 100<br>VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Fig. 7 Typical Capacitance Characteristics Fig. 8 Typical Gain-Bandwidth Product<br>vs. Collector Current<br>| n a<br>Ordering Information (Note 6)<br>Part Numberart Numberrt Numbert Number Numberumbermberberr Case Packagingackagingkagingagingingg<br>2DD2661-13661-131-133 SOT89-3L T89-3L 89-3L -3L 3L L 2500/Tape500/TapeTapeape & Reel Reel eel l<br>Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.<br>CAPACITANCE (pF)<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>NEW PRODUCT<br>**----- End of picture text -----**<br> **Part Numberart Numberrt Numbert Number Numberumbermberberr Case Packagingackagingkagingagingingg** 2DD2661-13661-131-133 SOT89-3L T89-3L 89-3L -3L 3L L 2500/Tape500/TapeTapeape & Reel Reel eel l 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 2661 = Product Type Marking Code **YWW** YWW = Date Code Marking **2661** Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 ## **Marking Information** ## **Package Outline Dimensions** **==> picture [332 x 163] intentionally omitted <==** **----- Start of picture text -----**<br> D1 C SOT89-3L<br>Dim Min Max Typ<br>A 1.40 1.60 1.50<br>B 0.45 0.55 0.50<br>E B1 0.37 0.47 0.42<br>H<br>C 0.35 0.43 0.38<br>co D 4.40 4.60 4.50<br>B L D1 1.50 1.70 1.60<br>E 2.40 2.60 2.50<br>B1 e<br>JET 1. EERE e — — 1.50<br>H 3.95 4.25 4.10<br>L 0.90 1.20 1.05<br>A<br>All Dimensions in mm<br>a —<br>D<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br> 3 of 4 **www.diodes.com** 2DD2661 Document number: DS31635 Rev. 2 - 2 December 2008 © Diodes Incorporated **2DD2661** ## **Suggested Pad Layout** |Y1<br>X3<br>X2<br>~~X1~~<br>Y3<br>Y2<br>~~C~~<br>I “4<br>~~mt~~<br>CT<br>WET<br>~~Ls~~|**Dimensions **<br>**X1**<br>**X2**<br>**X3**<br>**Y1**<br>**Y2**<br>**Y3**<br>**C**||**Value (in mm)**<br>1.7<br>0.9<br>0.4<br>2.7<br>1.3<br>1.9<br>3.0| |---|---|---|---| ## IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. 4 of 4 **www.diodes.com** 2DD2661 Document number: DS31635 Rev. 2 - 2 December 2008 © Diodes Incorporated
Updated at February 9, 2023
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