2DD2098R-13

**2DD2098R** 

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|PART OBSOLETE - USE ZXTN25020DZ|2DD2098R|
|LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR CE(SAT) NPN SURFACE MOUNT TRANSISTOR  NPN SURFACE MOUNT TRANSISTOR|
|Features|Mechanical Data|
|•|Epitaxial Planar Die Construction|•|Case: SOT89-3L|
|•|Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at|•|Case Material: Molded Plastic, "Green” Molding Compound.|
|4A|UL Flammability Classification Rating 94V-0|
|•|Complementary PNP Type Available (2DB1386)|•|Moisture Sensitivity: Level 1 per J-STD-020|
|•|Ideally Suited for Automated Assembly Processes|•|Terminals: Finish — Matte Tin annealed over Copper leadframe|
|•|Ideal for Medium Power Switching or Amplification Applications|(Lead Free Plating). Solderable per MIL-STD-202, Method 208|
|•|Lead Free By Design/RoHS Compliant (Note 1)|•|Marking Information: See Page 3|
|•|"Green" Device (Note 2)|•|Ordering Information: See Page 3|
|•|Weight: 0.055 grams (approximate)|
|3|E|
|COLLECTOR|
|2,4|
|C|4|2|C|
|1|
|BASE|1|B|
|3|
|EMITTER|Top View|
|Top View|Device Schematic|Pin Out Configuration|
|:|>|*|oN|
|Maximum Ratings|@TA = 25°C unless otherwise specified|
|Characteristic|Symbol|Value|Unit|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|20|V|
|Emitter-Base Voltage|VEBO|6|V|
|Peak Pulse Current|ICM|10|A|
|Continuous Collector Current|IC|5|A|
|a|
|Thermal Characteristics|
|Characteristic|Symbol|Value|Unit|
|Power Dissipation (Note 3)|@ TA = 25°C|PD|1|W|
|Thermal Resistance, Junction to Ambient Air (Note 3)|@ TA = 25°C|RθJA|125|°C/W|
|—f|Operating and Stora|$$|ge Temperature Ran|4|ge|eeCe|TJ, TSTG|-55 to +150|°C|
|Notes:|1. No purposefully added lead.|
|2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.|
|3. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at|
|XX|J|
|http://www.diodes.com/datasheets/ap02001.pdf.|

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## **LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR CE(SAT) NPN SURFACE MOUNT TRANSISTOR  NPN SURFACE MOUNT TRANSISTOR** 

- Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 

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2DD2098R Document number: DS31299 Rev. 5 - 4 

June 2021 © Diodes Incorporated 

**2DD2098R** 

**Electrical Characteristics** @TA = 25°C unless otherwise specified 

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Ge Characteristic  Symbol  GQ Min  Typ Max  Unit  CO Conditions<br>Re OFF CHARACTERISTICS (Note 4)<br>GG Collector-Base Breakdown Voltage  V(BR)CBO 50    V  IC = 50µA, IE = 0<br>GG Collector-Emitter Breakdown Voltage  V(BR)CEO 20   CO  (S(O V  IC = 1mA, IB = 0<br>GQ Emitter-Base Breakdown Voltage  V(BR)EBO 6   QO  (OO V  IE = 50µA, IC = 0<br>Gs Collector Cut-Off Current  ICBO  GO)  CO 0.5  (OOO µA  VCB = 40V, IE = 0<br>GG Emitter Cut-Off Current  IEBO     CG 0.5  µA  CO VEB = 5V, IC = 0<br>em ON CHARACTERISTICS (Note 4)<br>GQ Collector-Emitter Saturation Voltage  VCE(SAT)  0.3  1.0  V  IC = 4A, IB = 0.1A<br>a DC Current Gain  hFE 180   390   IC = 0.5A, VCE = 2V<br>SMALL SIGNAL CHARACTERISTICS<br>Transition Frequency  fT  220   MHz  VCE = 6V, IE = -50mA<br>ee Output Capacitance  ee Cob  ee 14   pF  f = 100MHz Vf = 1MHz CB = 20V, IE = 0,<br>Notes:  4. Measured under pulsed conditions.  Pulse width = 300µs.  Duty cycle ≤2%. » 4<br>1.0<br>3.0<br>2.5<br>0.8 e\AceL<br>2.0<br>2 IN Ley | | _———S—<br>0.6<br>a)<br>Sgr<br>1.5<br>0.4<br>Aer<br>Ww<br>4 1.0 7 Ig =4mA<br>oO<br>0.2 RθJA = 125°C/W CLT= 0.5 a SLre|<br>0<br>0<br>0 25 50 75 100 125 150 0 1 2 3 4 5<br>TA, AMBIENT TEMPERATURE (°C) Vee, COLLECTOR EMITTER VOLTAGE (V)<br>Fig. 1 Power Dissipation vs.  Fig . 2 Typical Collector Current<br>Ambient Temperature (Note 3) vs. Collector - Emitter Voltage<br>600 ,T a 0.5<br>500 4G. Wi VCE = 2V s 0.4 IC/IB = 40 |<br>TA = 150°C<br>AQ 400 (ivi wl WIT “Wing tN a Sa4wE 0.3 | |<br>TA = 85°C<br>eT A - [<br>nd 300 TIN ae<br>oa TA = 25°C a eet ‘ = ro) 0.2 |<br>x ~ O F [}}<br>200 \ ee TA = 150°C<br>ay IN z TA = 85°C I}<br>= TA = -55°C > 0.1 Wh<br>i 100 een aT Bt yf TA = 25°C<br>Paull FUT TTTTIPPsy wy TA = -55°C<br>\ 0 |<br>0 \ 0.001 SST 0.01 0.1 1 10<br>0.001 Ic, 0.01 0.1 1 10 I¢, COLLECT O R CURRENT (A)<br>Fig . 3 Typical COLLECTORDC Current  CURRGain vs E. NTCollector (A) Current Fig. 4 Typical Collectorvs. Collector-EmitterCurrentSaturation Voltage<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br>


2 of 5 

2DD2098R Document number: DS31299 Rev. 5 - 4 

June 2021 © Diodes Incorporated 

**www.diodes.com** 

**2DD2098R** 

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VCE = 2V<br>Soa LL Ln S o<br>TA = -55°C TA = -55°C<br>ira5  W(Loee iN s = tath en,ip ry ) )<br>TA = 25°C TA = 25°C<br>EeTe T A  = 85°C Te T gBe oo T A  = 85°C  aag<br>0 . 2 TA = 150°C 2 o2 TA = 150°C ‘ | IC/IB = 40<br>oO ~~<br>#0 0.001 0.01 0.1 1 10 5Ww 0.001 0.01 d 0.1 N b Sl 1 all 10<br>Ip, COLLECTOR CURRENT (A) > c» COLL OR CURRE<br>Fi 5 g.Typical Base - Emitter Tur n- On Voltage Fig>6 Typical Base -E mitter Saturation Voltage<br>vs . Collector Current vs. Colle Current<br>300<br>aa<br>a<br>1,000  =F ee TTT EL 250 LAA ii<br>ET ee _ - |_|<br>oS|© —LLLUChoS PALUPTT TTTmill fez= 200 >» >) V A4a gen ran<br>Cibo<br>So aera Ir >.<br>< UNLTTI aa 150 /<br>F100 100 at saaill WV<br>oa a a ee <x<br>x HHH ECEEra HH 100 Fy tt<br>3 Pea a TPTe aa)Zz<br>8 CSS a <<br>LL ITTTT 50 V CE  = 6V<br>RPLaat | SQA : f = 100MHz<br>0M, Cobo i<br>0<br>10 cn[ WP | TS QF 0 10 20 30 40 50 60 70 80 90 100<br>0.01 0.1 1 10 100 -IE, EMITTER CURRENT (mA)<br>SE VOLTAG Fig. 8 Typical Gain-Bandwidth Product<br>Fig . 7 T itance istics vs. Emitter Current<br>Ordering Information (Note 5)<br>pe<br>DO Part Number Case ( Packaging<br>NG 2DD2098R-13  SOT89-3L  2500/Tape & Reel<br>Notes:  5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.<br>**----- End of picture text -----**<br>


## **Marking Information** 

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YWW<br>KN3R<br>**----- End of picture text -----**<br>


KN3R = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 7 = 2007) WW = Week code (01 – 53) 

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2DD2098R Document number: DS31299 Rev. 5 - 4 

June 2021 © Diodes Incorporated 

**2DD2098R** 

## **Package Outline Dimensions** 

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D1<br>C SOT89-3L<br>Dim  Min  Max<br>A 1.40  1.60<br>B 0.44  0.62<br>E H B1 0.35  0.54<br>C 0.35  0.43<br>D 4.40  4.60<br>B L D1  1.52  1.83<br>B1 e E 2.29  2.60<br>e1 e 1.50 Typ<br>e1 3.00 Typ<br>H 3.94  4.25<br>A L 0.89  1.20<br>All Dimensions in mm<br>D<br>ggested Pad Layout ested Pad Layout yout out<br>X1<br>Y1 Dimensions Value (in mm)<br>X1  1.7<br>X2  0.9<br>X3<br>X2 X3  0.4<br>Y3 Y1  2.7<br>Y2<br>Y2  1.3<br>Y3  1.9<br>r C e ve C  3.0<br>w o<br>2DD2098R 4 of 5<br>Document number: DS31299 Rev. 5 - 4 www.diodes.com<br>8° (4X)<br>R0.200<br>**----- End of picture text -----**<br>


**Suggested Pad Layout ested Pad Layout yout out** 

June 2021 © Diodes Incorporated 

**2DD2098R IMPORTANT NOTICE** 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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