1PMT5920BT1G
Zener Single Diode, 6.2 V, 3.2 W, DO-216AA, 2 Pins, 150 °C, Surface Mount
- Manufacturer: ONSEMI
- Product type: Zener Single Diodes
- Zener Voltage Vz Typ:6.2V; Power Dissipation Pd:3.2W; Diode Case Style:DO-216AA; Zener Tolerance ±:-; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:POWERMITE 1PMT592
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: POWERMITE 1PMT5920B
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: DO-216AA
- Power Dissipation: 3.2W
- Zener Voltage Nom: 6.2V
- Operating Temperature Max: 150°C
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.151 € |
| Current stock | 1000+ |
| Lead time | 30 days |
1PMT5920B Series ## 3.2 Watt Plastic Surface Mount POWERMITE[®] Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. **http://onsemi.com** **PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2 - 47 VOLTS** ## **Features** - - °C **==> picture [135 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> 1 . 2<br>1: CATHODE<br>2: ANODE<br>**----- End of picture text -----**<br> - A - - - - - - - - - 2 **==> picture [50 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> POWERMITE<br>CASE 457<br>PLASTIC<br>1<br>Se<br>os<br>2<br>**----- End of picture text -----**<br> - ## **Mechanical Characteristics** ## **MARKING DIAGRAM** **CASE:** Void‐free, transfer‐molded, thermosetting plastic **FINISH:** All external surfaces are corrosion resistant and leads are readily solderable ## **MOUNTING POSITION:** Any ## **MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:** 260°C for 10 Seconds **==> picture [127 x 97] intentionally omitted <==** **----- Start of picture text -----**<br> M<br>1 xxB 2<br>CATHODE ANODE<br>M = Date Code<br>xxB = Specific Device Code<br>(See Table on Page 2)<br>= Pb-Free Package<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**||**Package**|**Shipping**†| |---|---|---|---| |1PMT59xxBT1G||POWERMITE|3000/Tape&Reel| |||(Pb-Free)|| |†For information on tape and reel specifications,|†For information on tape and reel specifications,||†For information on tape and reel specifications,| |including part orientation and tape sizes, please|||| |refer to our Tape and Reel Packaging Specifications|refer to our Tape and Reel Packaging Specifications||| |Brochure, BRD8011/D.|||| Publication Order Number: **1PMT5920B/D** **1** © Semiconductor Components **October 2007 - Rev. 4** **1PMT5920B Series** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |DC Power Dissipation @ TA= 25°C (Note 1)<br>Derate above 25°C<br>Thermal Resistance, Junction-to-Ambient|°PD°<br>R�JA|500<br>4.0<br>248|°mW<br>mW/°C<br>°C/W| |Thermal Resistance, Junction-to-Lead (Anode)|R�Janode|35|°C/W| |Maximum DC Power Dissipation (Note 2)<br>Thermal Resistance from Junction-to-Tab (Cathode)|°PD°<br>R�Jcathode|3.2<br>23|W<br>°C/W| |Operating and Storage Temperature Range|TJ, Tstg|-55 to +150|°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted with recommended minimum pad size, PC board FR-4. 2. At Tab (Cathode) temperature, Ttab = 75°C ## **ELECTRICAL CHARACTERISTICS** (TL = 25°C unless ## otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types) |**Symbol**|**Parameter**| |---|---| |VZ|Reverse Zener Voltage @ IZT| |IZT|Reverse Current| |ZZT|Maximum Zener Impedance @ IZT| |IZK|Reverse Current| |ZZK|Maximum Zener Impedance @ IZK| |IR|Reverse Leakage Current @ VR| |VR|Reverse Voltage| |IF|Forward Current| |VF|Forward Voltage @ IF| **==> picture [194 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> I<br>IF<br>VZ VR<br>V<br>IR VF<br>IZT<br>Zener Voltage Regulator<br>**----- End of picture text -----**<br> ## **ELECTRICAL CHARACTERISTICS** (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) |**Device***|**Device**<br>**Marking**|**Zener Voltage**(Note 3)|**Zener Voltage**(Note 3)|**Zener Voltage**(Note 3)|**IZT**|**IR @ VR**|**VR**|**ZZT @ IZT**<br>(Note 4)|**ZZK @ IZK**<br>(Note 4)|**IZK**| |---|---|---|---|---|---|---|---|---|---|---| |||**VZ @ IZT(Volts)**||||||||| |||**Min**|**Nom**|**Max**|**(mA)**|**(�A)**|**(V)**|**(�)**|**(�)**|**(mA)**| |1PMT5920BT1G|20B|5.89|6.2|6.51|60.5|5.0|4.0|2.0|200|1.0| |1PMT5921BT1G|21B|6.46|6.8|7.14|55.1|5.0|5.2|2.5|200|1.0| |1PMT5924BT1G|24B|8.64|9.1|9.56|41.2|5.0|7.0|4.0|500|0.5| |1PMT5927BT1G|27B|11.4|12|12.6|31.2|1.0|9.1|6.5|550|0.25| |1PMT5929BT1G|29B|14.25|15|15.75|25|1.0|11.4|9.0|600|0.25| |1PMT5933BT1G|33B|20.9|22|23.1|17|1.0|16.7|17.5|650|0.25| |1PMT5934BT1G|34B|22.8|24|25.2|15.6|1.0|18.2|19|700|0.25| |1PMT5935BT1G|35B|25.65|27|28.35|13.9|1.0|20.6|23|700|0.25| |1PMT5941BT1G|41B|44.65|47|49.35|8.0|1.0|35.8|67|1000|0.25| 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. **http://onsemi.com** **2** **1PMT5920B Series** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 604] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5 100<br>3<br>2.5<br>10<br>2<br>TL<br>1.5<br>1<br>1<br>0.5<br>0 0.1<br>25 50 75 100 125 150 175 5 6 7 8 9 10 11<br>T, TEMPERATURE (°C) VZ, ZENER VOLTAGE (VOLTS)<br>Figure 1. Steady State Power Derating Figure 2. VZ to 10 Volts<br>100 10<br>50<br>30 8 V Z @ I ZT<br>20<br>6<br>10<br>5 4<br>3<br>2 2<br>1<br>0<br>0.5<br>0.3 -2<br>0.2<br>0.1 -4<br>0 10 20 30 40 50 60 70 80 90 100 2 4 6 8 10 12<br>VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)<br>Figure 3. VZ = 12 thru 47 Volts Figure 4. Zener Voltage - To 12 Volts<br>200 200<br>IZ(dc) = 1mA<br>VZ @ IZT 100<br>100 70<br>50<br>70<br>30<br>50<br>20<br>30<br>10<br>10 mA<br>7<br>20<br>5<br>3 20 mA i Z(rms) = 0.1 I Z(dc)<br>10 2<br>10 20 30 50 70 100 200 5 7 10 20 30 50 70 100<br>VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS)<br>Figure 5. Zener Voltage - 14 To 47 Volts Figure 6. Effect of Zener Voltage<br>, ZENER CURRENT (mA)<br>IZ<br>D<br>P , MAXIMUM POWER DISSIPATION (W)<br>C)<br>°<br>I , ZENER CURRENT (mA)Z<br>, TEMPERATURE COEFFICIENT (mV/<br>VZ<br>�<br>C)<br>°<br>Z<br>, TEMPERATURE COEFFICIENT (mV/ Z , DYNAMIC IMPEDANCE (OHMS)<br>VZ<br>�<br>**----- End of picture text -----**<br> **http://onsemi.com** **3** **1PMT5920B Series** **==> picture [249 x 389] intentionally omitted <==** **----- Start of picture text -----**<br> 1 k<br>500 TJ = 25°C<br>iZ(rms) = 0.1 IZ(dc)<br>200<br>100<br>50<br>20<br>10<br>5 22 V<br>2 12 V<br>6.8 V<br>1<br>0.5 1 2 5 10 20 50 100 200 500<br>IZ, ZENER TEST CURRENT (mA)<br>Figure 7. Effect of Zener Current<br>10,000<br>1000<br>MEASURED @ 0 V BIAS<br>MEASURED @ 50% VR<br>100<br>10<br>1 10 100<br>VZ, REVERSE ZENER VOLTAGE (VOLTS)<br>Z<br>Z , DYNAMIC IMPEDANCE (OHMS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 8. Capacitance versus Reverse Zener Voltage** **http://onsemi.com** **4** **1PMT5920B Series** ## **PACKAGE DIMENSIONS** **POWERMITE** CASE 457-04 ISSUE D NOTES: **==> picture [356 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> -A- C F<br>J 0.08 (0.003) M T B S C [S]<br>S<br>TERM. 1<br>-B-<br>K<br>TERM. 2<br>R<br>L<br>et Pat<br>J<br>H D<br>aie -T- 0.08 (0.003) M T B S C [S]<br>SOLDERING FOOTPRINT*<br>0.635<br>0.025<br>2.67<br>0.105 0.762<br>0.030<br>— '<br>2.54 1.27<br>0.100 0.050<br>Sh<br>SCALE 10:1 mm<br>inches<br>*For additional information on our Pb-Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. **==> picture [94 x 93] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 1.75 2.05 0.069 0.081<br>B 1.75 2.18 0.069 0.086<br>C 0.85 1.15 0.033 0.045<br>D 0.40 0.69 0.016 0.027<br>F 0.70 1.00 0.028 0.039<br>H -0.05 +0.10 -0.002 +0.004<br>J 0.10 0.25 0.004 0.010<br>K 3.60 3.90 0.142 0.154<br>L 0.50 0.80 0.020 0.031<br>R 1.20 1.50 0.047 0.059<br>S 0.50 REF : 0.019 REF<br>**----- End of picture text -----**<br> POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **ON Semiconductor Website** : **www.onsemi.com** **N. American Technical Support** : 800-282-9855 Toll Free USA/Canada **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303-675-2175 or 800-344-3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303-675-2176 or 800-344-3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81-3-5773-3850 Sales Representative **1PMT5920B/D** **http://onsemi.com 5**
Updated at April 21, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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