1N6263
Small Signal Schottky Diode, Single, 60 V, 15 mA, 410 mV, 50 mA, 200 °C
- Manufacturer: STMICROELECTRONICS
- Product type:
- Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:60V; Forward Current If(AV):15mA; Forward Voltage VF Max:410mV; Forward Surge Current Ifsm Max:50; Available until stocks are exhausted
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: DO-204AH
- Diode Configuration: Single
- Forward Voltage Max: 410mV
- Forward Surge Current: 50mA
- Reverse Recovery Time: -
- Average Forward Current: 15mA
- Operating Temperature Max: 200°C
- Repetitive Peak Reverse Voltage: 60V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.029 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**==> picture [6 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **1N6263** ## SMALL SIGNAL SCHOTTKY DIODE ## **DESCRIPTION** Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. **==> picture [220 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> DO-35<br>**----- End of picture text -----**<br> ## **ABSOLUTE RATINGS** (limiting values) |**Symbol**|**Parameter**|**Parameter**|**Value**|**Unit**| |---|---|---|---|---| |VRRM|Repetitive Peak Reverse Voltage||60|V| |IF|Forward Continuous Current*|Ta= 25°C|15|mA| |IFSM|Surge non Repetitive Forward Current*|tp≤1s|50|mA| |Tstg<br>Tj|Storage and Junction Temperature Range||- 65 to 200<br>- 65 to 200|°C| |TL|Maximum Lead Temperature for Soldering during 10s at 4mm<br>from Case||230|°C| ## **THERMAL RESISTANCE** **==> picture [459 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Test Conditions Value Unit<br>Rth(j-a) Junction-ambient* 400 °C/W<br>**----- End of picture text -----**<br> ## **ELECTRICAL CHARACTERISTICS** ## STATIC CHARACTERISTICS **==> picture [460 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Test Conditions Min. Typ. Max. Unit<br>VBR Tamb = 25°C IR = 10µA 60 V<br>VF * * Tamb = 25°C IF = 1mA 0.41 V<br>Tamb = 25°C IF = 15mA 1<br>IR * * Tamb = 25°C VR = 50V 0.2 µA<br>**----- End of picture text -----**<br> ## DYNAMIC CHARACTERISTICS **==> picture [459 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Test Conditions Min. Typ. Max. Unit<br>C Tamb = 25°C VR = 0V f = 1MHz 2.2 pF<br>τ Tamb = 25°C IF = 5mA Krakauer Method 100 ps<br>**----- End of picture text -----**<br> * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2% **.** Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/3 **1N6263** **Fig. 1:** Forward current versus forward voltage (typical values). **Fig. 3:** Reverse current versus ambient temperature. **Fig. 2:** Capacitance C versus reverse applied voltage VR (typical values). **Fig. 4:** Reverse current versus continuous reverse voltage (typical values). 2/3 **1N6263** ## **PACKAGE MECHANICAL DATA** DO-35 **==> picture [461 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> REF. DIMENSIONS<br>C A C O/ B Millimeters Inches<br>Min. Max. Min. Max.<br>A 3.05 4.50 0.120 0.177<br>B 1.53 2.00 0.060 0.079<br>O/ D O/ D<br>C 28.00 1.102<br>D 0.458 0.558 0.018 0.022<br>**----- End of picture text -----**<br> Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. ## STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. **http://www.st.com** 3/3
Updated at April 29, 2026
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