1N5818G

**DATA SHEET www.onsemi.com** 

## Axial Lead Rectifiers 

## **SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS** 

## 1N5817, 1N5818, 1N5819 

This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. 

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AXIAL LEAD<br>CASE 59<br>STYLE 1<br>**----- End of picture text -----**<br>


## **Features** 

- Extremely Low VF 

- Low Stored Charge, Majority Carrier Conduction 

## **MARKING DIAGRAM** 

- Low Power Loss/High Efficiency 

- These are Pb−Free Devices* 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

- Weight: 0.4 Gram (Approximately) 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds 

- Polarity: Cathode Indicated by Polarity Band 

- ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) 

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A<br>1N581x<br>YYWW �<br>�<br>**----- End of picture text -----**<br>


A =Assembly Location 1N581x =Device Number x= 7, 8, or 9 YY =Year WW =Work Week � =Pb−Free Package 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 6 of this data sheet. 

> *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2006 **August, 2021 − Rev. 11** 

**1N5817/D** 

**1N5817, 1N5818, 1N5819** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||||
|---|---|---|---|---|---|
|**Rating**|**Symbol**|**1N5817**|**1N5818**|**1N5819**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|20|30|40|V|
|Non−Repetitive Peak Reverse Voltage|VRSM|24|36|48|V|
|RMS Reverse Voltage|VR(RMS)|14|21|28|V|
|Average Rectified Forward Current (Note 1), (VR(equiv) ≤0.2 VR(dc), TL= 90°C,<br>R�JA= 80°C/W, P.C. Board Mounting, see Note 2, TA= 55°C)|IO|1.0|||A|
|Ambient Temperature (Rated VR(dc), PF(AV)= 0, R�JA= 80°C/W)|TA|85|80|75|°C|
|Non−Repetitive Peak Surge Current, (Surge applied at rated load conditions,<br>half−wave, single phase 60 Hz, TL= 70°C)|IFSM|25 (for one cycle)|||A|
|Operating and Storage Junction Temperature Range (Reverse Voltage applied)|TJ, Tstg|−65 to +125|||°C|
|Peak Operating Junction Temperature (Forward Current applied)|TJ(pk)|150|||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** (Note 1) 

|**THERMAL CHARACTERISTICS**(Note 1)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**||**Max**||**Unit**|
|Thermal Resistance, Junction−to−Ambient|R�JA||80||°C/W|
|**ELECTRICAL CHARACTERISTICS**(TL= 25°C unless otherwise noted) (Note 1)||||||
|**Characteristic**|**Symbol**|**1N5817**|**1N5818**|**1N5819**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 2)<br>(iF= 0.1 A)<br>(iF= 1.0 A)<br>(iF= 3.0 A)|vF|0.32<br>0.45<br>0.75|0.33<br>0.55<br>0.875|0.34<br>0.6<br>0.9|V|
|Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)<br>(TL= 25°C)<br>(TL= 100°C)|IR|1.0<br>10|1.0<br>10|1.0<br>10|mA|



1. Lead Temperature reference is cathode lead 1/32 in from case. 

2. Pulse Test: Pulse Width = 300 � s, Duty Cycle = 2.0%. 

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**2** 

**1N5817, 1N5818, 1N5819** 

## **NOTE 3. — DETERMINING MAXIMUM RATINGS** 

Reverse power dissipation and the possibility of thermal runaway must be considered when operating this rectifier at reverse voltages above 0.1 VRWM. Proper derating may be accomplished by use of equation (1). 

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Figures 1, 2, and 3 permit easier use of equation (1) by taking reverse power dissipation and thermal runaway into consideration. The figures solve for a reference temperature as determined by equation (2). 

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Substituting equation (2) into equation (1) yields: 

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Inspection of equations (2) and (3) reveals that TR is the ambient temperature at which thermal runaway occurs or where TJ = 125°C, when forward power is zero. The transition from one boundary condition to the other is evident on the curves of Figures 1, 2, and 3 as a difference in the rate of change of the slope in the vicinity of 115°C. The data of Figures 1, 2, and 3 is based upon dc conditions. For use in common rectifier circuits, Table 1 indicates suggested factors for an equivalent dc voltage to use for conservative design, that is: 

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The factor F is derived by considering the properties of the various rectifier circuits and the reverse characteristics of Schottky diodes. 

EXAMPLE: Find TA(max) for 1N5818 operated in a 12−volt dc supply using a bridge circuit with capacitive filter such that IDC = 0.4 A (IF(AV) = 0.5 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), R�JA = 80°C/W. 

Step 1. Find VR(equiv). Read F = 0.65 from Table 1, Step 1. Find ∴ VR(equiv) = (1.41)(10)(0.65) = 9.2 V. Step 2. Find TR from Figure 2. Read TR = 109 ° C Step 1. Find @ VR = 9.2 V and R � JA = 80 ° C/W. 

Step 3. Find PF(AV) from Figure 4. **Read PF(AV) = 0.5 W 

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**Values given are for the 1N5818. Power is slightly lower for the 1N5817 because of its lower forward voltage, and higher for the 1N5819. 

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125<br>40 30 23<br>° 115<br>105<br>R�JA (°C/W) = 110<br>95<br>80<br>60<br>85<br>75<br>2.0 3.0 4.0 5.0 7.0 10 15 20<br>VR, DC REVERSE VOLTAGE (VOLTS)<br>C)<br>TR, REFERENCE TEMPERATURE (<br>**----- End of picture text -----**<br>


**Figure 1. Maximum Reference Temperature 1N5817** 

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125<br>40 30 23<br>° 115<br>105<br>R�JA (°C/W) = 110<br>80<br>95 60<br>85<br>75<br>3.0 4.0 5.0 7.0 10 15 20 30<br>VR, DC REVERSE VOLTAGE (VOLTS)<br>Figure 2. Maximum Reference Temperature<br>1N5818<br>125<br>40<br>30<br>° 115 23<br>105 R�JA (°C/W) = 110<br>80<br>95<br>60<br>85<br>75<br>4.0 5.0 7.0 10 15 20 30 40<br>VR, DC REVERSE VOLTAGE (VOLTS)<br>C)<br>TR, REFERENCE TEMPERATURE (<br>C)<br>TR, REFERENCE TEMPERATURE (<br>**----- End of picture text -----**<br>


**Figure 3. Maximum Reference Temperature 1N5819** 

**Table 1. Values for Factor F** 

|**Circuit**|**Half Wave**|**Half Wave**|**Full Wave, Bridge**|**Full Wave, Bridge**|**Full Wave, Center Tapped*†**|**Full Wave, Center Tapped*†**|
|---|---|---|---|---|---|---|
|**Load**|**Resistive**|**Capacitive***|**Resistive**|**Capacitive**|**Resistive**|**Capacitive**|
|Sine Wave|0.5|1.3|0.5|0.65|1.0|1.3|
|Square Wave|0.75|1.5|0.75|0.75|1.5|1.5|



**Note that VR(PK) ≈ 2.0 Vin(PK). 

†Use line to center tap voltage for Vin. 

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**3** 

**1N5817, 1N5818, 1N5819** 

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90 5.0<br>Sine Wave<br>80 BOTH LEADS TO HEATSINK, 3.0 I (FM) = π (Resistive Load)<br>EQUAL LENGTH<br>2.0 I(AV)<br>70 5<br>Capacitive<br>10<br>60 1.0 Loads { dc<br>MAXIMUM 0.7 20<br>50 0.5 SQUARE WAVE<br>TYPICAL<br>40 0.3 TJ ≈ 125°C<br>0.2<br>30<br>0.1<br>20<br>0.07<br>10 0.05<br>1 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0.2 0.4 0.6 0.8 1.0 2.0 4.0<br>L, LEAD LENGTH (INCHES) IF(AV), AVERAGE FORWARD CURRENT (AMP)<br>Figure 4. Steady−State Thermal Resistance Figure 5. Forward Power Dissipation<br>1N5817−19<br>1.0<br>0.7<br>0.5<br>0.3<br>Z�JL(t) = Z�JL • r(t)<br>0.2<br>P P<br>0.1 tp pk pk DUTY CYCLE, D = tPEAK POWER, P an pk , is peak ofp/t1<br>0.07 TIME equivalent square power pulse.<br>0.05 � TJL = Ppk •  R �t JL 1  [D + (1 − D)  •  r(t1 + tp) + r(tp) − r(t1)] where<br>0.03 � T JL  = the increase in junction temperature above the lead temperature<br>r(t) = normalized value of transient thermal resistance at time, t, from Figure 6,<br>0.02 i.e.:<br>r(t) = r(t 1  + t p ) = normalized value of transient thermal resistance at time, t 1  + t p .<br>0.01<br>0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k<br>t, TIME (ms)<br>C/W)°<br>PF(AV), AVERAGE POWER DISSIPATION (WATTS)<br>JL, THERMAL RESISTANCE, JUNCTION-TO-LEAD (<br>θ<br>R<br>r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 6. Thermal Response** 

## **NOTE 4. — MOUNTING DATA** 

Data shown for thermal resistance, junction−to−ambient (R�JA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. 

## **TYPICAL VALUES FOR R** � **JA IN STILL AIR** 

||**1/8**|**1/4**|**1/2**|**3/4**|**3/4**|
|---|---|---|---|---|---|
|**1**|52|65|72|85|°C/W|
|2|67|80|87|100|°C/W|
|3|50||||°C/W|



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Mounting Method 1 Mounting Method 3<br>P.C. Board with P.C. Board with<br>1−1/2 ″  x 1−1/2 ″ 1−1/2 ″  x 1−1/2 ″<br>copper surface. copper surface.<br>L = 3/8″<br>L L<br>BOARD GROUND<br>PLANE<br>Mounting Method 2<br>L L<br>VECTOR PIN MOUNTING<br>**----- End of picture text -----**<br>


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**4** 

**1N5817, 1N5818, 1N5819** 

**NOTE 5. — THERMAL CIRCUIT MODEL** 

(For heat conduction through the leads) 

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R�S(A) R�L(A) R�J(A) R�J(K) R�L(K) R�S(K)<br>TA(A) PD TA(K)<br>TL(A) TC(A) TJ TC(K) TL(K)<br>**----- End of picture text -----**<br>


Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: 

(Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: R � L = 100 ° C/W/in typically and 120 ° C/W/in maximum R � J = 36 ° C/W typically and 46 ° C/W maximum. 

TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature 

R � S = Thermal Resistance, Heatsink to Ambient 

R � L = Thermal Resistance, Lead to Heatsink 

R � J = Thermal Resistance, Junction to Case PD = Power DissipationD = Power Dissipation = Power Dissipation 

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PD = Power DissipationD = Power Dissipation = Power Dissipation 30<br>20<br>20 1 Cycle<br>TL = 70 ° C<br>f = 60 Hz<br>10<br>10<br>7.0<br>5.0 TC = 100 ° C 7.0<br>5.0<br>3.0<br>Surge Applied at<br>2.0 Rated Load Conditions<br>25°C 3.0<br>1.0 2.0 3.0 5.0 7.0 10 20 30 40 70 100<br>NUMBER OF CYCLES<br>1.0<br>0.7 Figure 8. Maximum Non−Repetitive Surge Current<br>0.5<br>3020 TJ = 125 ° C<br>0.3<br>15<br>0.2 100°C<br>5.0<br>3.0<br>2.0<br>0.1 75 ° C<br>1.0<br>0.07<br>0.5<br>0.05 0.3 25°C<br>0.2<br>0.03 0.1 1N5817<br>1N5818<br>0.02 0.05<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.03 1N5819<br>vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0 4.0 8.0 12 16 20 24 28 32 36 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>IFSM, PEAK SURGE CURRENT (AMP)<br>iF, INSTANTANEOUS FORWARD CURRENT (AMP)<br>IR, REVERSE CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 9. Typical Reverse Current** 

**Figure 7. Typical Forward Voltage** 

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**5** 

**1N5817, 1N5818, 1N5819** 

## **NOTE 6. — HIGH FREQUENCY OPERATION** 

Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 10.) 

Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. 

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200<br>100<br>1N5817<br>70<br>1N5818<br>50<br>1N5819<br>30<br>TJ = 25 ° C<br>20 f = 1.0 MHz<br>10<br>0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 10. Typical Capacitance** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|1N5817|Axial Lead*|1000 Units / Bag|
|1N5817G|Axial Lead*|1000 Units / Bag|
|1N5817RL|Axial Lead*|5000 / Tape & Reel|
|1N5817RLG|Axial Lead*|5000 / Tape & Reel|
|1N5818|Axial Lead*|1000 Units / Bag|
|1N5818G|Axial Lead*|1000 Units / Bag|
|1N5818RL|Axial Lead*|5000 / Tape & Reel|
|1N5818RLG|Axial Lead*|5000 / Tape & Reel|
|1N5819|Axial Lead*|1000 Units / Bag|
|1N5819G|Axial Lead*|1000 Units / Bag|
|1N5819RL|Axial Lead*|5000 / Tape & Reel|
|1N5819RLG|Axial Lead*|5000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*This package is inherently Pb−Free. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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AXIAL LEAD<br>CASE 59−10<br>ISSUE U<br>DATE 15 FEB 2005<br>B<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>K D 3. ALL RULES AND NOTES ASSOCIATED WITHJEDEC DO−41 OUTLINE SHALL APPLY<br>STYLE 1 STYLE 2 4. POLARITY DENOTED BY CATHODE BAND.<br>F 5. LEAD DIAMETER NOT CONTROLLED WITHIN F<br>DIMENSION.<br>A INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>A 0.161 0.205 4.10 5.20<br>SCALE 1:1 OPTIONAL AS NEEDEDPOLARITY INDICATOR(SEE STYLES) F BD 0.0790.028 0.1060.034 2.000.71 2.700.86<br>F −−− 0.050 −−− 1.27<br>K K 1.000 −−− 25.40 −−−<br>GENERIC<br>te| MARKING DIAGRAM*<br>       A        A<br>STYLE 1: STYLE 2: xxx xxx<br>PIN 1. CATHODE (POLARITY BAND) NO POLARITY<br>2. ANODE xxx xxx<br>4( YYWW GH6G YYWW<br>STYLE 1 STYLE 2<br>xxx = Specific Device Code<br>A = Assembly Location<br>YY = Year<br>WW = Work Week<br>**----- End of picture text -----**<br>


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*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42045B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: AXIAL LEAD PAGE 1 OF 1** ~~[| aT~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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