1N5817

**1N5817 – 1N5819** 

Taiwan Semiconductor 

## **1A, 20V - 40V Schottky Barrier Rectifier** 

## FEATURES 

- AEC-Q101 qualified available 

- Low forward voltage drop 

- Guard ring for overvoltage protection 

- High surge current capability 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- Switching mode power supply (SMPS) 

- Adapters 

- DC to DC converter 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|1|A|
|VRRM|20 - 40|V|
|IFSM|30|A|
|TJ MAX|125|°C|
|Package|DO-204AL (DO-41)||
|Configuration|Single die||



## Pd) ROHS HALOGEN — compuant FREE 

## MECHANICAL DATA 

- Case: DO-204AL (DO-41) 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Pure tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 0.330g (approximately) 

## **DO-204AL (DO-41)** 

Cathode —_\q— Anode 

|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|SYMBOL|1N5817|1N5818|1N5819|UNIT|
|Marking code on the device||1N5817|1N5818|1N5819||
|Repetitive peak reverse voltage|VRRM|20|30|40|V|
|Reverse voltage, total rms value|VR(RMS)|14|21|28|V|
|Forward current|IF|1|||A|
|Surge peak forward current, 8.3ms single<br>halfsinewave superimposed on ratedload|IFSM|30|||A|
|Critical rate of rise of off-state voltage|dv/dt|10,000|||V/µs|
|Junction temperature|TJ|-55 to +125|||°C|
|Storage temperature|TSTG|-55 to +125|||°C|



1 Version: H2104 

## **1N5817 – 1N5819** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-ambient thermal resistance|RӨJA|100|°C/W|
|Junction-to-case thermal resistance|RӨJC|45|°C/W|



|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|---|
|PARAMETER||CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage(1)|1N5817|IF= 1A, TJ= 25°C|VF|-|0.45|V|
||1N5818|||-|0.55|V|
||1N5819|||-|0.60|V|
|Reverse current @ rated VR<br>(2)||TJ= 25°C|IR|-|1|mA|
|||TJ= 100°C||-|10|mA|
|Junction capacitance||1MHz, VR= 4.0V|CJ|55|-|pF|



## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|
|ORDERING CODE(1)(2)|PACKAGE|PACKING|
|1N581x|DO-204AL (DO-41)|5,000 / Tape & Reel|
|1N581x A0G|DO-204AL (DO-41)|3,000 / Ammo box|
|1N581xH|DO-204AL (DO-41)|5,000 / Tape & Reel|
|1N581xHA0G|DO-204AL (DO-41)|3,000 / Ammo box|



## **Notes:** 

1. “x” defines voltage from 20V (1N5817) to 40V (1N5819) 

2. “H” means AEC-Q101 qualified 

2 Version: H2104 

6 a —_—_$_$_____ **1N5817 – 1N5819** Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [480 x 400] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 1000<br>100<br>1<br>10<br>f=1.0MHz<br>0 1 Vsig=50mVp-p  ll<br>25 50 75 100 125 0.1 1 10 100<br>LEAD TEMPERATURE (°C)  REVERSE VOLTAGE (V)<br>      Fig.3 Typical Reverse Characteristics     Fig.4 Typical Forward Characteristics<br>100 10<br>10 TJ=125 ° C 1N5817<br>eto ff SK K<br>1<br>= == ><br>- == a n co 1N5818-1N5819<br>1 ooo — ff<br>===———— TJ=25 ° C —f fp<br>Pulse width 300μs<br>1% duty cycle<br>0.1 ae a = 0.1 Tt<br>10 20 30 40 50 60 70 80 90 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (mA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**Fig.5 Maximum Non-Repetitive Forward Surge Current** 

**==> picture [349 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>30 en 8.3ms single half sine wave<br>25 NOEL<br>20<br>CST<br>15<br>PSS<br>10 esce<br>5 ee<br>0 |<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: H2104 

**1N5817 – 1N5819** TAIWANSEMICONDUCTOR(jap Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.6 Typical Transient Thermal Characteristics** 

**==> picture [384 x 201] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>po TT TT<br>aa aaeeee eee<br>en<br>1 eee<br>a|<br>— eT ee<br>ee a ee ee ee ee eee eee<br>a a ee ee ee ee eee<br>a a<br>0.1<br>0.01 0.1 1 10 100<br>PULSE DURATION (s)<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br>


4 Version: H2104 

**1N5817 – 1N5819** caSEMICONDUCTOR[i Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**DO-204AL (DO-41)** 

## MARKING DIAGRAM 

P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code 

5 Version: H2104 

**1N5817 – 1N5819** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

## Notice 

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6 Version: H2104