1N4937G

Ss SEMICONDUCTOR **1N4933G – 1N4937G** 

## Taiwan Semiconductor 

## **1A, 50V - 600V Fast Recovery Rectifier** 

## FEATURES 

- AEC-Q101 qualified available 

- High efficiency, Low VF 

- High current capability 

- High reliability 

- High surge current capability 

- RoHS Compliant 

- Halogen-free according to IEC 61249-2-21 

## APPLICATIONS 

- DC to DC converter 

- Switching mode converters and inverters 

- General purpose 

|KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS|
|---|---|---|
|PARAMETER|VALUE|UNIT|
|IF|1|A|
|VRRM|50 - 600|V|
|IFSM|30|A|
|TJ MAX|150|°C|
|Package|DO-204AL (DO-41)||
|Configuration|Single die||



## Pd) ROHS HALOGEN — compuant FREE 

## MECHANICAL DATA 

- Case: DO-204AL (DO-41) 

- Molding compound meets UL 94V-0 flammability rating 

- Terminal: Pure tin plated leads, solderable per J-STD-002 

- Meet JESD 201 class 2 whisker test 

- Polarity: Indicated by cathode band 

- Weight: 0.330g (approximately) 

## **DO-204AL (DO-41)** 

## Cathode —_\q— Anode 

~~a~~ ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G UNIT ~~eeee~~ Marking code on the device 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G ~~es~~ Repetitive peak reverse voltage VRRM 50 100 200 400 600 V ~~ee a~~ Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 V Forward current IF 1 A Surge peak forward current, 8.3ms single half sine wave IFSM 30 A ~~ee~~ superimposed on rated load ~~es~~ Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C ~~es ee~~ 

1 Version: I2104 

## **1N4933G – 1N4937G** TAIWANSEMICONDUCTOR(i Taiwan Semiconductor 

|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|
|---|---|---|---|
|PARAMETER|SYMBOL|TYP|UNIT|
|Junction-to-ambient thermal resistance|RӨJA|65|°C/W|



|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|ELECTRICAL SPECIFICATIONS (TA= 25°C unless otherwise noted)|
|---|---|---|---|---|---|
|PARAMETER|CONDITIONS|SYMBOL|TYP|MAX|UNIT|
|Forward voltage(1)|IF= 1A, TJ= 25°C|VF|-|1.2|V|
|Reverse current @ rated VR<br>(2)|TJ= 25°C|IR|-|5|µA|
||TJ= 125°C||-|150|µA|
|Junction capacitance|1MHz, VR= 4.0V|CJ|10|-|pF|
|Reverse recovery time|IF= 0.5A, IR= 1.0A,<br>Irr=0.25A|trr|-|200|ns|



## **Notes:** 

1. Pulse test with PW = 0.3ms 

2. Pulse test with PW = 30ms 

## ORDERING INFORMATION 

|ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION|
|---|---|---|
|ORDERING CODE(1)(2)|PACKAGE|PACKING|
|1N493xG|DO-204AL (DO-41)|5,000 / Tape & Reel|
|1N493xG A0G|DO-204AL (DO-41)|3,000 / Ammo box|
|1N493xGH|DO-204AL (DO-41)|5,000 / Tape & Reel|
|1N493xGHA0G|DO-204AL (DO-41)|3,000 / Ammo box|



## **Notes:** 

1. “x” defines voltage from 50V (1N4933G) to 600V (1N4937G) 

2. “H” means AEC-Q101 qualified 

2 Version: I2104 

## 5 Et $$$ 

## **1N4933G – 1N4937G** 

## Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

## **Fig.1 Forward Current Derating Curve** 

## **Fig.2 Typical Junction Capacitance** 

**==> picture [480 x 400] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 100<br>FT | ETEET<br>1 10<br>ee|<br>f=1.0MHz  PTL EE [LLL]<br>Vsig=50mVp-p<br>0 1 Cc<br>25 50 75 100 125 150 1 10 100<br>AMBIENT TEMPERATURE (°C)  REVERSE VOLTAGE (V)<br>      Fig.3 Typical Reverse Characteristics     Fig.4 Typical Forward Characteristics<br>1000 10<br>100 SSS —— TJ=100 ° C Uf<br>10 — — TJ=75 ° C 1 Bane<br>1<br>TJ=25 ° C Pulse width 300μs<br>1% duty cycle<br>0.1 —oS S 0.1 aaa fo<br>10 20 30 40 50 60 70 80 90 100 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%)   FORWARD VOLTAGE (V)<br>CAPACITANCE (pF)<br>AVERAGE FORWARD CURRENT (A)<br>INSTANTANEOUS REVERSE CURRENT (μA)  INSTANTANEOUS FORWARD CURRENT (A)<br>**----- End of picture text -----**<br>


**Fig.5 Maximum Non-Repetitive Forward Surge Current** 

**==> picture [349 x 196] intentionally omitted <==**

**----- Start of picture text -----**<br>
35<br>30 8.3ms single half sine wave<br>25 S a<br>SCOTT<br>20 a<br>15<br>Soh<br>10<br>Tr<br>5 en eee<br>0 es<br>1 10 100<br>NUMBER OF CYCLES AT 60 Hz<br>PEAK FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br>


3 Version: I2104 

**1N4933G – 1N4937G** TAIWANSEMICONDUCTOR[pg Taiwan Semiconductor 

## CHARACTERISTICS CURVES 

(TA = 25°C unless otherwise noted) 

**Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram** 

4 Version: I2104 

**1N4933G – 1N4937G** caSEMICONDUCTOR[i Taiwan Semiconductor 

## PACKAGE OUTLINE DIMENSIONS 

**DO-204AL (DO-41)** 

## MARKING DIAGRAM 

P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code 

5 Version: I2104 

**1N4933G – 1N4937G** TAIWANSEMICONDUCTOR(i 

Taiwan Semiconductor 

## Notice 

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6 Version: I2104