1N4448

## 1N91x, 1N4x48, FDLL914, FDLL4x48 

## Small Signal Diode 

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## **ORDERING INFORMATION** 

|**Part Number**|**Marking**|**Package**|**Packing Method**|
|---|---|---|---|
|1N914<br>~~————~~|914<br>~~————~~|DO−204AH (DO−35)<br>~~————~~|Bulk<br>~~————~~|
|1N914−T50A<br>~~————~~|914<br>~~————~~|DO−204AH (DO−35)<br>~~————~~|Ammo<br>~~————~~|
|1N914TR<br>~~————~~|914<br>~~————~~|DO−204AH (DO−35)<br>~~————~~|Tape and Reel<br>~~————~~|
|1N914ATR<br>~~————~~|914A<br>~~————~~|DO−204AH (DO−35)<br>~~————~~|Tape and Reel<br>~~————~~|
|1N914B|914B|DO−204AH (DO−35)|Bulk|
|1N914BTR|914B|DO−204AH (DO−35)|Tape and Reel|
|1N916<br>~~6~~|916<br>~~6~~|DO−204AH (DO−35)<br>~~6~~|Bulk<br>~~6~~|
|1N916A<br>~~6~~|916A<br>~~6~~|DO−204AH (DO−35)<br>~~6~~|Bulk<br>~~6~~|
|1N916B<br>~~6~~|916B<br>~~6~~|DO−204AH (DO−35)<br>~~6~~|Bulk<br>~~6~~|
|1N4148<br>~~6~~|4148<br>~~6~~|DO−204AH (DO−35)<br>~~6~~|Bulk<br>~~6~~|
|1N4148TA<br>~~6~~|4148<br>~~6~~|DO−204AH (DO−35)<br>~~6~~|Ammo<br>~~6~~|
|1N4148−T26A|4148|DO−204AH (DO−35)|Ammo|
|1N4148−T50A|4148|DO−204AH (DO−35)|Ammo|
|1N4148TR|4148|DO−204AH (DO−35)|Tape and Reel|
|1N4148−T50R|4148|DO−204AH (DO−35)|Tape and Reel|
|1N4448|4448|DO−204AH (DO−35)|Bulk|
|1N4448TR|4448|DO−204AH (DO−35)|Tape and Reel|
|FDLL914|Black|SOD−80|Tape and Reel|
|FDLL914A|Black|SOD−80|Tape and Reel|
|FDLL914B|Black|SOD−80|Tape and Reel|
|FDLL4148|Black|SOD−80|Tape and Reel|
|FDLL4148−D87Z|Black|SOD−80|Tape and Reel|
|FDLL4448|Black|SOD−80|Tape and Reel|
|FDLL4448−D87Z|Black|SOD−80|Tape and Reel|



Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2002 **October, 2017 − Rev. 4** 

**1N914/D** 

## **1N91x, 1N4x48, FDLL914, FDLL4x48** 

**ABSOLUTE MAXIMUM RATINGS** (Values are at TA = 25 ° C unless otherwise noted) (Note 1) 

|**ABSOLUTE MAXIMUM RATINGS**(Values are at TA= 25°C unless otherwise noted) (Not|e 1)|||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Maximum Repetitive Reverse Voltage|VRRM|100|V|
|Average Rectified Forward Current|IO|200|mA|
|DC Forward Current|IF|300|mA|
|Recurrent Peak Forward Current|If|400|mA|
|Non−repetitive Peak Forward Surge Current<br>Pulse Width = 1.0 s<br>Pulse Width = 1.0�s|IFSM|1.0|A|
|||4.0|A|
|Storage Temperature Range|TSTG|−65 to +200|°C|
|Operating Junction Temperature Range|TJ|−55 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Power Dissipation|PD|500|mW|
|Thermal Resistance, Junction−to−Ambient|R�JA|300|°C|



**ELECTRICAL CHARACTERISTICS** (Values are at TA = 25 ° C unless otherwise noted) (Note 2) 

|**ELECTRIC**|**AL CHARACTERISTICS**(Values are at TA|**AL CHARACTERISTICS**(Values are at TA|= 25°C unless otherwise noted) (No|te 2)|||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**||**Conditions**|**Min**|**Max**|**Unit**|
|VR|Breakdown Voltage||IR= 100�A|100||V|
||||IR= 5.0�A|75||V|
|VF|Forward Voltage|914B / 4448|IF= 5.0 mA|0.62|0.72|V|
|||916B|IF= 5.0 mA|0.63|0.73|V|
|||914 / 916 / 4148|IF= 10 mA||1.0|V|
|||914A / 916A|IF= 20 mA||1.0|V|
|||916B|IF= 20 mA||1.0|V|
|||914B / 4448|IF= 100 mA||1.0|V|
|IR|Reverse Leakage||VR= 20 V||0.025|�A|
||||VR= 20 V, TA= 150°C||50|�A|
||||VR= 75 V||5.0|�A|
|CT|Total Capacitance|916/916A/916B/4448|VR= 0, f = 1.0 MHz||2.0|pF|
|||914/914A/914B/4148|VR= 0, f = 1.0 MHz||4.0|pF|
|trr|Reverse Recovery Time||IF= 10 mA, VR= 6.0 V (600 mA)<br>Irr= 1.0 mA, RL= 100�||4.0|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Non−recurrent square wave PW = 8.3 ms. 

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**2** 

**1N91x, 1N4x48, FDLL914, FDLL4x48** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**==> picture [185 x 536] intentionally omitted <==**

**----- Start of picture text -----**<br>
160 Ta=25 oC<br>150<br>140<br>130<br>120<br>110<br>1 2 3 5 10 20 30 50 100<br>Reverse Current, I R  [uA]<br>Figure 1. Reverse Voltage vs. Reverse Current<br>BV − 1.0 to 100 V − 1.0 to 100  − 1.0 to 100  � A<br>550<br>Ta= 25 o C<br>500<br>450<br>400<br>350<br>300<br>250<br>1 2 3 5 10 20 30 50 100<br>Forward Current, I F  [uA]<br>Figure 3. Forward Voltage vs. Forward Current<br>VF − 1 to 100 F − 1 to 100  − 1 to 100  � A<br>1.6<br>Ta= 25 oC<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>10 20 30 50 100 200 300 500 800<br>Forward Current, I F [mA]<br> [V]<br>     R<br>Reverse Voltage, V<br> [mV]<br>Forward Voltage, V   R<br> [mV]<br>Forward Voltage, V  F<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Voltage vs. Reverse Current BV − 1.0 to 100 V − 1.0 to 100  − 1.0 to 100 � A** 

**Figure 3. Forward Voltage vs. Forward Current VF − 1 to 100 F − 1 to 100  − 1 to 100 � A** 

**Figure 5. Forward Voltage vs. Forward Current VF − 10 to 800 mA** 

**==> picture [187 x 154] intentionally omitted <==**

**----- Start of picture text -----**<br>
120<br>Ta= 25 o C<br>100<br>80<br>60<br>40<br>20<br>0<br>10                              20                 30                     50             70             100<br>Reverse Voltage, VR [V]<br>GENERAL RULE: The Reverse Current of a diode will approximately<br>     double for every ten (10) Degree C increase in Temperature<br>  [nA]<br>       R<br>Reverse Current, I<br>**----- End of picture text -----**<br>


**Figure 2. Reverse Current vs. Reverse Voltage IR − 10 to 100 V** 

**==> picture [181 x 136] intentionally omitted <==**

**----- Start of picture text -----**<br>
750<br>Ta= 25 o C<br>700<br>650<br>600<br>550<br>500<br>450<br>0.1 0.2 0.3 0.5 1 2 3 5 10<br>Forward Current, I F  [mA]<br> [mV]<br>Forward Voltage, V    F<br>**----- End of picture text -----**<br>


**Figure 4. Forward Voltage vs. Forward Current VF − 0.1 to 10 mA** 

**==> picture [181 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
900<br>Typical<br>800<br>Ta= −40 o C<br>700<br>600 Ta= 25oC<br>500 Ta= +65 o C<br>400<br>300<br>0.01 0.03 0.1 0.3 1 3 10<br>Forward Current, IF  [mA]<br> [mV]<br>Forward Voltage, V    F<br>**----- End of picture text -----**<br>


**Figure 6. Forward Voltage vs. Ambient Temperature VF -  0.01 - 20 mA (- 40 to +65** ° **C)** 

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**3** 

**1N91x, 1N4x48, FDLL914, FDLL4x48** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

**==> picture [185 x 342] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.90<br>TA = 25 oC<br>0.85<br>0.80<br>0.75<br>0 2 4 6 8 10 12 14<br>REVERSE VOLTAGE (V)<br>Figure 7. Total Capacitance<br>500<br>400<br>300<br>I F(AV) − Average Rectified Current − mA<br>200<br>100<br>0<br>0 50 100 150<br>Ambient Temperature ( [o] C)<br>Total Capacitance (pF)<br>Current (mA)<br>**----- End of picture text -----**<br>


**Figure 9. Average Rectified Current (IF(AV)) vs.  Ambient Temperature (TA)** 

**==> picture [182 x 146] intentionally omitted <==**

**----- Start of picture text -----**<br>
4.0<br>Ta = 25 o C<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>10 20 30 40 50 60<br>Reverse Recovery Current, I rr [mA]<br>IF = 10mA ,   IRR = 1.0 mA  ,  Rloop = 100 Ohms<br> [ns]<br>     rr<br>Reverse Recovery Time, t<br>**----- End of picture text -----**<br>


**Figure 8. Reverse Recovery Time vs. Reverse Recovery Current** 

**==> picture [186 x 142] intentionally omitted <==**

**----- Start of picture text -----**<br>
500<br>400<br>DO−35 and LL−34 / SOD−80<br>300<br>200<br>100<br>0<br>0 50 100 150 200<br>Temperature ( oC)<br>[mW]<br>Power Dissipation, PD<br>**----- End of picture text -----**<br>


**Figure 10. Power Derating Curve** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [490 x 668] intentionally omitted <==**

**----- Start of picture text -----**<br>
AXIAL LEAD<br>CASE 017AG<br>ISSUE O<br>DATE 31 AUG 2016<br>T50 = 25.40 MIN (2X)<br>T26 = 14.00 MIN (2X)<br>4.56<br>3.05<br>H P<br>0.533<br>0.460 NOTES: UNLESS OTHERWISE SPECIFIED<br>   A)  PACKAGE STANDARD REFERENCE:<br>JEDEC DO−204, VARIATION AH.<br>   B) HERMETICALLY SEALED GLASS PACKAGE.<br>   C) PACKAGE WEIGHT IS 0.137 GRAM.<br>   D) ALL DIMENSIONS ARE IN MILLIMETERS.<br>| |<br>1.91<br>|<br>1.53<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13443G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: AXIAL LEAD PAGE 1 OF 1<br>—<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**MiniMELF / SOD−80** CASE 100AD ISSUE O 

DATE 30 APR 2012 

|**DOCUMENT NUMBER:**|**98AON79582E**|
|---|---|
|**DESCRIPTION:**|**MINIMELF / SOD−80**|



Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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