1N4148TR.
SMALL SIGNAL DIODE 100V 200mA DO-35, FULL REEL
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Single; Repetitive Peak Reverse Voltage:100V; Average Forward Current:200mA; Forward Voltage Max:1V; Reverse Recovery Time:4ns; Forw 83C2426
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 2Pins
- Product Range: -
- Qualification: -
- Diode Mounting: Through Hole
- Diode Case Style: DO-204AH
- Diode Configuration: Single
- Forward Voltage Max: 1V
- Forward Surge Current: 4A
- Reverse Recovery Time: 4ns
- Average Forward Current: 200mA
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.008 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**==> picture [42 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> June 2015<br>**----- End of picture text -----**<br> # **1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode** **==> picture [361 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> Cathode Band<br> SOD-80 COLOR BAND MARKING<br>DEVICE 1ST BAND<br>FDLL914 BLACK<br>SOD80 FDLL914A BLACK<br>FDLL914B BLACK<br>LL-34 FDLL4148 BLACK FDLL4448 BLACK<br>DO-35 THE PLACEMENT OF THE EXPANSION GAP<br>Cathode is denoted with a black band HAS NO RELATIONSHIP TO THE LOCATION -1st band denotes cathode terminal<br>OF THE CATHODE TERMINAL and has wider width<br>**----- End of picture text -----**<br> ## **Ordering Information** |**Part Number**<br>**Marking**<br>**Package**<br>**Packing Method**<br>1N914<br>914<br>DO-204AH (DO-35)<br>Bulk<br>1N914_T50A<br>914<br>DO-204AH (DO-35)<br>Ammo<br>1N914TR<br>914<br>DO-204AH (DO-35)<br>Tape and Reel<br>1N914ATR<br>914A<br>DO-204AH (DO-35)<br>Tape and Reel<br>1N914B<br>914B<br>DO-204AH (DO-35)<br>Bulk<br>1N914BTR<br>914B<br>DO-204AH (DO-35)<br>Tape and Reel<br>1N916<br>916<br>DO-204AH (DO-35)<br>Bulk<br>1N916A<br>916A<br>DO-204AH (DO-35)<br>Bulk<br>~~CC~~<br>~~—ee~~<br>~~————~~<br>~~a ee~~| |---| |1N916B<br>916B<br>DO-204AH (DO-35)<br>Bulk<br>1N4148<br>4148<br>DO-204AH (DO-35)<br>Bulk<br>1N4148TA<br>4148<br>DO-204AH (DO-35)<br>Ammo<br>1N4148_T26A<br>4148<br>DO-204AH (DO-35)<br>Ammo<br>1N4148_T50A<br>4148<br>DO-204AH (DO-35)<br>Ammo<br>1N4148TR<br>4148<br>DO-204AH (DO-35)<br>Tape and Reel<br>1N4148_T50R<br>4148<br>DO-204AH (DO-35)<br>Tape and Reel<br>1N4448<br>4448<br>DO-204AH (DO-35)<br>Bulk<br>1N4448TR<br>4448<br>DO-204AH (DO-35)<br>Tape and Reel<br>~~ee~~<br>~~nn a eo~~<br>~~Gee~~<br>~~—~~<br>~~em eee~~<br>~~——————~~| |FDLL914<br>Black<br>SOD-80<br>Tape and Reel<br>FDLL914A<br>Black<br>SOD-80<br>Tape and Reel<br>~~ee~~| |FDLL914B<br>Black<br>SOD-80<br>Tape and Reel<br>FDLL4148<br>Black<br>SOD-80<br>Tape and Reel<br>~~op~~| |FDLL4148_D87Z<br>Black<br>SOD-80<br>Tape and Reel<br>FDLL4448<br>Black<br>SOD-80<br>Tape and Reel<br>~~ee~~| |FDLL4448_D87Z<br>Black<br>SOD-80<br>Tape and Reel| © 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 www.fairchildsemi.com ## **Absolute Maximum Ratings**[(1)] Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Note:**<br>1. These ratings are limiting values above which the serviceability of the diode may be impaired.<br>**Thermal Characteristics**<br>**Symbol**<br>**Parameter**<br>**Value**<br>**Unit**<br>VRRM<br>Maximum Repetitive Reverse Voltage<br>100<br>V<br>IO<br>Average Rectified Forward Current<br>200<br>mA<br>IF<br>DC Forward Current<br>300<br>mA<br>If<br>Recurrent Peak Forward Current<br>400<br>mA<br>IFSM<br>Non-repetitive Peak Forward Surge Current<br>Pulse Width = 1.0 s<br>1.0<br>A<br>Pulse Width = 1.0μs<br>4.0<br>A<br>TSTG<br>Storage Temperature Range<br>-65 to +200<br>°C<br>TJ<br>Operating Junction Temperature Range<br>-55 to +175<br>°C<br>**Symbol**<br>**Parameter**<br>**Max.**<br>**Unit**<br>**1N/FDLL 914/A/B / 916/A/B / 4148 / 4448**<br>PD<br>Power Dissipation<br>500<br>mW<br>RθJA<br>Thermal Resistance, Junction-to-Ambient<br>300<br>°C/W<br>~~——=~~| |---| ## **Electrical Characteristics**[(2)] ° Values are at TA = 25 C unless otherwise noted . |**Symbol**|**Parameter**|**Parameter**|**Conditions**|**Min.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VR|Breakdown Voltage||IR= 100μA|100||V| ||||IR= 5.0μA|75||V| |VF|Forward Voltage|914B / 4448|IF= 5.0 mA|0.62|0.72|V| |||916B|IF= 5.0 mA|0.63|0.73|V| |||914 / 916 / 4148|IF= 10 mA||1.0|V| |||914A / 916A|IF= 20 mA||1.0|V| |||916B|IF= 20 mA||1.0|V| |||914B / 4448|IF= 100 mA||1.0|V| |IR|Reverse Leakage||VR= 20 V||0.025|μA| ||||VR= 20 V, TA= 150°C||50|μA| ||||VR= 75 V||5.0|μA| |CT|Total Capacitance|916/916A/916B/4448|VR= 0, f = 1.0 MHz||2.0|pF| |||914/914A/914B/4148|VR= 0, f = 1.0 MHz||4.0|pF| |trr|Reverse Recovery Time||IF= 10 mA, VR= 6.0 V (600 mA)<br>Irr= 1.0 mA, RL= 100Ω||4.0|ns| ## **Note:** 2. Non-recurrent square wave PW= 8.3 ms. © 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 www.fairchildsemi.com 2 ## **Typical Performance Characteristics** **==> picture [436 x 558] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>160 Ta=25 oC Ta= 25 o C<br>100<br>150<br>80 Ey<br>140<br>60 |}<br>130<br>40 eeee ae<br>120110 200 Pore<br>1 2 3 5 10 20 30 50 100 10 20 30 50 70 100<br>Reverse Current, IR [uA] GENERAL RULE: The Reverse Current of a diode will approximately Reverse Voltage, VR [V]<br> double for every ten (10) Degree C increase in Temperature<br>Figure 1. Reverse Voltage vs. Reverse Current Figure 2. Reverse Current vs. Reverse Voltage<br>BV - 1.0 to 100 μ A IR - 10 to 100 V<br>550 Ta= 25 o C 750 Ta= 25 o C<br>500 700<br>450 650<br>400 600<br>350 550<br>300 500<br>250 450<br>1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10<br>Forward Current, IF [uA] Forward Current, IF [mA]<br>Figure 3. Forward Voltage vs. Forward Current Figure 4. Forward Voltage vs. Forward Current<br>VF - 1 to 100 μ A VF - 0.1 to 10 mA<br>1.6 900<br>Ta= 25 oC<br>800 Te Typical<br>1.4 Ta= -40 o C<br>700 Ser ess<br>1.2 600 Ta= 25 oC<br>1.0 500 Ta= +65 o C<br>400<br>0.8<br>300<br>0.6 10 20 30 50 100 200 300 500 800 =a 0.01 ES2 0.03 0.1 oe 0.3 1 3 ee 10<br>Forward Current, IF [mA] Forward Current, IF [mA]<br>Figure 5. Forward Voltage vs. Forward Current Figure 6. Forward Voltage vs. Ambient Temperature<br>VF - 10 to 800 mA VF - 0.01 - 20 mA (- 40 to +65 ° C)<br> [V] [nA]<br> R R<br>Reverse Voltage, V Reverse Current, I<br> [mV] [mV]<br> R F<br>Forward Voltage, V Forward Voltage, V<br> [mV] [mV]<br> F F<br>Forward Voltage, V Forward Voltage, V<br>**----- End of picture text -----**<br> © 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** (Continued) **==> picture [185 x 335] intentionally omitted <==** **----- Start of picture text -----**<br> 0.90<br>TA = 25 oC<br>0.85<br>REE EEEHH]<br>0.80<br>0.75 hinaaeSET<br>0 2 4 6 8 10 12 14<br>REVERSE VOLTAGE (V)<br>Figure 7. Total Capacitance<br>500<br>400<br>300<br>200<br>100<br>0<br>0 50 100 150<br>Ambient Temperature ( oC)<br>I<br>F(AV) - AVERAGE RECTIFIED CURRENT - mA<br>Total Capacitance (pF)<br>Current (mA)<br>**----- End of picture text -----**<br> **Figure 9. Average Rectified Current (IF(AV)) vs. Ambient Temperature (TA)** **==> picture [177 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>Ta = 25 o C<br>3.5<br>3.0<br> GEEREEEEES<br>2.5<br>2.0<br>1.51.0 pRERASEPE E EEEEP SS E<br>10 20 30 40 50 RS 60<br>Reverse Recovery Current, Irr [mA]<br>IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms<br> [ns]<br> rr<br>Reverse Recovery Time, t<br>**----- End of picture text -----**<br> **Figure 8. Reverse Recovery Time vs. Reverse Recovery Current** **==> picture [180 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>400<br>DO-35 and LL-34 / SOD-80<br>300<br>200<br>100<br>0<br>0 50 100 150 200<br>Temperature [ oC]<br> [mW]Power Dissipation, PD<br>**----- End of picture text -----**<br> **Figure 10. Power Derating Curve** © 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 www.fairchildsemi.com 4 ## **Physical Dimensions** **Figure 11. AXIAL LEADED, GLASS, JEDEC DO204, VARIATION AH, DO-204AH (DO-35)** © 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 www.fairchildsemi.com 5 ## **Physical Dimensions** (Continued) **==> picture [266 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 12. 2-TERMINAL, SOD-80, JEDEC DO-213AC, MINI-MELF<br>**----- End of picture text -----**<br> © 2002 Fairchild Semiconductor Corporation 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8 www.fairchildsemi.com 6 ## **TRADEMARKS** The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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