1HP04CH-TL-W

**1HP04CH Small Signal MOSFET –100V, 18Ω, –170mA, Single P-Channel** This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge www.onsemi.com driving or low on resistance requirements. ~~—~~ @ **Features** • High Voltage (100V) VDSS RDS(on) Max ID Max • 4V drive − 100V 18Ω@ − 10V − 170mA • High Speed Switching and Low Loss ~~=~~ 21Ω@ − 4V • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance **ELECTRICAL CONNECTION P-Channel Typical Applications** • Lithium-ion Battery Charging and Discharging Cell Balance 3 **SPECIFICATIONS ABSOLUTE MAXIMUM RATING** at Ta = 25 ° C (Note 1) Parameter Symbol Value Unit 1 1 : Gate Drain to Source Voltage VDSS − 100 V 2 : Source 3 : Drain Gate to Source Voltage VGSS ± 20 V Drain Current (DC) ID − 170 mA 2 Drain Current (Pulse) IDP − 680 mA PW ≤ 10 μ s, duty cycle ≤ 1% Power Dissipation **PACKING TYPE : TL         MARKING** When mounted on ceramic substrate PD 0.6 W 2 (900mm × 0.8mm) Junction Temperature Tj 150 ° C ~~os~~ Storage Temperature Tstg − 55 to +150 ° C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not TL be assumed, damage may occur and reliability may be affected. **THERMAL RESISTANCE RATINGS ORDERING INFORMATION** See detailed ordering and shipping Parameter Symbol Value Unit information on page 5 of this data sheet. Junction to Ambient When mounted on ceramic substrate R θ JA 208 ° C/W 2 ~~oT~~ (900mm × 0.8mm) 

**©** Semiconductor Components Industries, LLC, 2015 **October 2015 - Rev. 1** 

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Publication Order Number : 

**1HP04CH/D** 

**1HP04CH** 

## **ELECTRICAL CHARACTERISTICS** at Ta = 25 ° C (Note 2) 

|**ELECTRICAL CHARACTERISTIC**|**S**at Ta=25°|C (Note 2)|||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions||Value||Unit|
||||min|typ|max||
|Drain to Source Breakdown Voltage|V(BR)DSS|ID=−1mA, VGS=0V|−100|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS=−100V, VGS=0V|||−1|μA|
|Gate to Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA|
|Gate Threshold Voltage|VGS(th)|VDS=−10V, ID=−100μA|−1.2||−2.6|V|
|Forward Transconductance|gFS|VDS=−10V, ID=−80mA||170||mS|
|Static Drain to Source On-State<br>Resistance|RDS(on)1|ID=−80mA, VGS=−10V||12.5|18|Ω|
||RDS(on)2|ID=−40mA, VGS=−4V||14|21|Ω|
|Input Capacitance|Ciss|VDS=−20V, f=1MHz||14||pF|
|Output Capacitance|Coss|||2.8||pF|
|Reverse Transfer Capacitance|Crss|||0.9||pF|
|Turn-ON Delay Time|td(on)|See specified Test Circuit||21||ns|
|Rise Time|tr|||18||ns|
|Turn-OFF Delay Time|td(off)|||200||ns|
|Fall Time|tf|||81||ns|
|Total Gate Charge|Qg|VDS=−50V, VGS=−10V, ID=−170mA||0.9||nC|
|Gate to Source Charge|Qgs|||0.14||nC|
|Gate to Drain “Miller” Charge|Qgd|||0.27||nC|
|Forward Diode Voltage|VSD|IS=−170mA, VGS=0V||−0.88|−1.2|V|



Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **Switching Time Test Circuit** 

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VIN VDD= --50V<br>0V<br>--10V<br>ID= --80mA<br>VIN<br>RL=612.5 Ω<br>D VOUT<br>PW ≤ 10 μ s<br>D.C. ≤ 1%<br>G Rg<br>1HP04CH<br>P.G 50 Ω S<br>Rg=3k Ω<br>**----- End of picture text -----**<br>


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**PACKAGE DIMENSIONS** unit : mm 

**CPH3** CASE 318BA ISSUE O 

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Recommended<br>Soldering Footprint<br>1 : Gate<br>2 : Source   0.6<br>3 : Drain<br>0.95 0.95<br>1.4<br>2.4<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|Device|Marking|Package|Shipping (Qty / Packing)|
|---|---|---|---|
|1HP04CH-TL-W|WX|CPH3<br>SC-59, SOT-23, TO-236<br> (Pb-Free /Halogen Free)|3,000 / Tape & Reel|



† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF 

Note on usage : Since the 1HP04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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