Semiconductors - Discretes Infineon

Power MOSFET, N Channel, 200 V, 7 A, 0.194 ohm, TSDSON, Surface Mount

Power MOSFET, N Channel, 80 V, 23 A, 0.027 ohm, PG-TSDSON, Surface Mount

Power MOSFET, N Channel, 250 V, 5 A, 0.371 ohm, TSDSON, Surface Mount

Power MOSFET, N Channel, 100 V, 18 A, 0.038 ohm, PG-TSDSON, Surface Mount

Power MOSFET, N Channel, 150 V, 21 A, 0.042 ohm, PG-TSDSON, Surface Mount

Power MOSFET, N Channel, 200 V, 15.2 A, 0.077 ohm, TSDSON, Surface Mount

Power MOSFET, N Channel, 55 V, 35 A, 0.0115 ohm, TO-220, Through Hole

Power MOSFET, N Channel, 55 V, 35 A, 0.0115 ohm, TO-263 (D2PAK), Surface Mount

Power MOSFET, N Channel, 49 V, 80 A, 0.0058 ohm, TO-263 (D2PAK), Surface Mount

Power MOSFET, N Channel, 200 V, 21 A, 0.1 ohm, TO-220, Through Hole

Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Dual Gate

Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Dual Gate

Thyristor Diode Module, Series Connected, 427A, 2.2kV, 2.2 V, Single Gate

Thyristor Diode Module, Series Connected, 480A, 2.2kV, 2.2 V, Single Gate

SCR THYRISTOR, 1.6KV, 515A

SCR THYRISTOR, 1.6KV, 635A

IGBT Module, Six Pack [Full Bridge], 100 A, 1.5 V, 175 °C, Module

IGBT Module, Three level Inverter, 75 A, 1.55 V, 500 W, 175 °C, Module

IGBT Module, Three level Inverter, 20 A, 1.2 V, 150 W, 150 °C, Module

IGBT Module, Three level Inverter, 200 A, 1.55 V, 680 W, 150 °C, Module

IGBT Module, Three level Inverter, 100 A, 1.55 V, 600 W, 150 °C, Module

IGBT Module, Six Pack, 200 A, 1.17 V, 150 °C, Module

IGBT Module, Three level Inverter, 600 A, 1.75 V, 2.15 kW, 150 °C, Module

IGBT Module, Three level Inverter, 75 A, 1.45 V, 175 W, 150 °C, Module

IGBT Module, Four Pack, 130 A, 3.2 V, 660 W, 125 °C, Module

IGBT Module, Four Pack, 100 A, 1.45 V, 275 W, 150 °C, Module

IGBT Module, Single Chopper, 580 A, 1.7 V, 2 kW, 125 °C, Module

IGBT Module, Dual, 1.4 kA, 1.75 V, 7.65 kW, 150 °C, Module

IGBT Module, Dual, 225 A, 1.7 V, 780 W, 125 °C, Module

IGBT Module, Dual, 225 A, 1.7 V, 780 W, 125 °C, Module